JPS6055727A - Ecl integrated circuit - Google Patents

Ecl integrated circuit

Info

Publication number
JPS6055727A
JPS6055727A JP16447183A JP16447183A JPS6055727A JP S6055727 A JPS6055727 A JP S6055727A JP 16447183 A JP16447183 A JP 16447183A JP 16447183 A JP16447183 A JP 16447183A JP S6055727 A JPS6055727 A JP S6055727A
Authority
JP
Japan
Prior art keywords
terminal
integrated circuit
potential
emitter
terminals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16447183A
Other languages
Japanese (ja)
Inventor
Hiroshige Matsumoto
博成 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16447183A priority Critical patent/JPS6055727A/en
Publication of JPS6055727A publication Critical patent/JPS6055727A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/086Emitter coupled logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To maximize power consumption by adding a transistor TR to each gate circuit in an ECL integrated circuit to set all outputs of the ECL integrated circuit to a uniform state of a high logical level. CONSTITUTION:In the ECL integrated circuit consisting of plural current switching gates due to emitter coupling, a TR15 is added which has the emitter connected to the emitter common part of gate TRs 12 and 13 and has the collector connected to the ground. A reference potential which is a middle potential between the high level and the low level is applied to a terminal 5, and a negative power VEE is applied to a terminal 7. When a control input terminal 10 is set to the GND potential, TRs 12, 13, and 14 are all cut off, and a high-potential logical level H appears in terminals 3 and 4 in any combination of logical levels H and L applied to input terminals 1 and 2. In this case, the power consumed by emitter followers 8 and 16 is larger than that in the case where the logical level L appears in terminals 3 and 4. When the terminal 10 is set to the VEE potential, the TR15 is cut off, and the ECL circuit is operated normally.

Description

【発明の詳細な説明】 本発明は、情報処理仮置に用いられるBCL乗積回路に
関するものでめる・ 不発明は、従来知られていなかった、E(、IL県積回
路同部の谷ゲートの論理的状態全同一にして、その集積
回路に最大電力を消費させる機能全提共するものである
[Detailed Description of the Invention] The present invention relates to a BCL multiplication circuit used for information processing temporary storage. It provides all the functions of making the logic states of the gates the same and allowing the integrated circuit to consume maximum power.

不発明では、FJCL呆積回路の内部の各エミ。In the non-invention, each emitter inside the FJCL monomer circuit.

タ結合ゲート回路の部分に、新しく少なくとも一つ以上
の、共通エミッタ部にエミ、りを、グランド部にコレク
タ葡接続するトランジスタを接続し、そのベースを制御
人力として、その11位をエミ。
At least one new transistor is connected to the joint gate circuit part, with the common emitter part connected to the emitter, and the collector connected to the ground part.

タ結合ゲート回路の2値の入出力論理レベルの高電位論
理レベルより十分高くして、谷ゲート回路の出力論理レ
ベルを人力論理レベルに無闇係に筒電位レベルにするこ
とにより、そのECL集積回路に最大電力を消費させる
ことをi>J能にし、またそのft1t制御人力の成位
をエミッタ結合ゲー11路の2値の入出力論理レベルの
1成型位レベル以下にすることにより、その集積回路に
通常の論理動作を行なわせる。
By making the output logic level of the valley gate circuit sufficiently higher than the high potential logic level of the binary input/output logic level of the data coupling gate circuit and making the output logic level of the valley gate circuit the human logic level, the ECL integrated circuit The integrated circuit can perform normal logical operations.

Ee1回路で、エミッタ結合の部分にエミッタを、グラ
ンドにコレクタを接続ツーるトランジスタを新しく接続
し、そのベース電位2HCL回路の2値の入出力論理レ
ベルの高電位レベルより十分高くすることによ!D、E
CLu路の人力トランジスタ及び基準電位をベース人力
とするトランジスタがすべて力、トオフし、ECLu路
のすべての出力論理レベルは高電位となる。
In the Ee1 circuit, connect a new transistor with the emitter connected to the emitter-coupled part and the collector connected to the ground, and make its base potential sufficiently higher than the high potential level of the binary input/output logic level of the 2HCL circuit! D,E
All the transistors in the CLu path and the transistors based on the reference potential are turned off, and all output logic levels in the ECLu path are at a high potential.

第1図に、本発明′f、2人力ECLゲート回路に実施
例をかす・ 端子1.2は、このゲート回路の入力端子、端子3,4
は出力端子、端子5は基準電位入力端子、6は定電流源
、端子7は電源入力端子であり、このECLu路の入出
カー理レベルの高電位の方をH1低電位の方=iLとす
ると、端子5には基準電位としてHとLの中間の電位が
印加され、端子7には負の電源を印加する。第2図にこ
れらの′−位レベルの関係全第3図人出力の真理値関係
を示す。
Fig. 1 shows an embodiment of the present invention'f, a two-man powered ECL gate circuit. Terminals 1 and 2 are the input terminals of this gate circuit, and terminals 3 and 4.
is an output terminal, terminal 5 is a reference potential input terminal, 6 is a constant current source, and terminal 7 is a power supply input terminal.If the higher potential of the input/output curl logic level of this ECLu path is the H1 lower potential = iL. , a potential intermediate between H and L is applied as a reference potential to terminal 5, and a negative power source is applied to terminal 7. FIG. 2 shows the relationship between these levels and FIG. 3 shows the truth value relationship of human output.

第1図の11の部分が不′#i明で新たに加えられた部
分で、制御入力端子1(1%(JND電位にすることに
よって、トランジスタ12,13.14がすべて力、ト
オフして、入力端子1.2に印加される人力論理レベル
H,Lのどのような組合せに対しても、出力端子3,4
には高電位の論理レベルUが現われる。また、制御入力
端子10t−IE電位にするとトランジスタ15はカッ
トオフし、このECLu路は通常に動作する・ 第1図で、出力端子3.4に高電位論理レベルHが現わ
れている場合は、エミッタホロワ8.16で消費される
電力は、出力端子3.4に低電位論理レベルLが現われ
ている場合よりも大きい。
The part 11 in Figure 1 is a newly added part that is not clear. By setting the control input terminal 1 (1% (JND) potential, all transistors 12, 13, and 14 are turned off. , for any combination of human logic levels H, L applied to input terminals 1.2, output terminals 3, 4.
A high potential logic level U appears at. Moreover, when the control input terminal 10t-IE potential is set, the transistor 15 is cut off and this ECLu path operates normally. In FIG. 1, when a high potential logic level H appears at the output terminal 3.4, The power consumed by the emitter follower 8.16 is greater than if a low potential logic level L were present at the output terminal 3.4.

第4図に、端子18.19に一入力端子、端子20を出
力端子、端子21を基準電位入力端子、端子22を制御
入力端子、端子23を電源入力端子とするECI、ゲー
ト回路を示す、ここで渠1図のECLゲート回路′t−
第5図のように表わし、第1図の端子1.2.3.4.
10 ’に第5図の端子23,24゜25.26.27
に対応させ、また第4図のECLゲート回jI!全第6
図のように表わし、第4図の端子18,19,20.2
1全第6図の端子28゜29.30.31に対応させる
。第5図と第6図では基準電位入力端子と電源入力を略
している。
FIG. 4 shows an ECI and gate circuit in which terminals 18 and 19 are input terminals, terminal 20 is an output terminal, terminal 21 is a reference potential input terminal, terminal 22 is a control input terminal, and terminal 23 is a power input terminal. Here, the ECL gate circuit 't-
The terminals 1.2.3.4. of FIG. 1 are represented as shown in FIG.
10' to terminals 23, 24゜25.26.27 in Figure 5
, and the ECL gate circuit jI! of FIG. All 6th
Terminals 18, 19, 20.2 in FIG.
1 Correspond to terminals 28°29.30.31 in Figure 6. In FIGS. 5 and 6, the reference potential input terminal and power input are omitted.

これら第5囚、第6図の記号を用いてECL@積回路に
本発明t′大施した概念図を第7図に示す。
FIG. 7 shows a conceptual diagram in which the present invention is applied to the ECL@product circuit using the symbols shown in FIG. 5 and FIG. 6.

端子32,33,34,35,36.37は、このEC
L集積回路の入力端子、端子38.39゜40.41は
出力端子、端子42は制御入力端子であシ、制御入力端
子42(i−GND電位にすることによfi、%ECL
ゲート回路の出力はすべて論理レベルHとなり、この集
積回路位最大電力を消費する。−また、制御入力端子1
VEB電位にすれば、この集積回路は通′畠の論理動作
を行なう。なお第7図で、GNL)端子電源入力端子、
基準電位入力端子は略しである。
Terminals 32, 33, 34, 35, 36.37 are connected to this EC
The input terminals of the L integrated circuit, terminals 38.39° and 40.41 are output terminals, and the terminal 42 is a control input terminal.
All outputs of the gate circuits are at logic level H, consuming the maximum power of this integrated circuit. - Also, control input terminal 1
When set to the VEB potential, this integrated circuit performs normal logic operations. In Fig. 7, the GNL) terminal power input terminal,
The reference potential input terminal is omitted.

不発明は、以上説明したように、ECL集積回路内の谷
ゲート回路にトランジスタ’k イ=J加することによ
49.ECL集積回路内部の出力をすべて高論理レベル
の一様な状態とし、 fi’r費亀力全最大かつ一慧的
にする効果がある。
As explained above, the invention is achieved by adding the transistor 'k i=J to the valley gate circuit in the ECL integrated circuit. All the outputs inside the ECL integrated circuit are kept in a uniform high logic level state, which has the effect of maximizing and maximizing the overall cost of fi'r.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例を示した回路図、第2図は第1
図の回路図の論理レベル上水した概念図、第3図社第1
1の回路の人出力と制AI人力の関係を示した真理値関
係を示す図、第4図は本発明の別の実施例を示した回路
図、第5図は第1図を簡単な記号で表わした凶、第6図
は第4図を簡単な記号で表わした図、第7凶は不発明を
実施した集積回路の概念図でめる。 1.2,18.19.23,24,28.29はECL
ゲート回路の入力端子、3,4,20゜25.26.3
0はBCLゲート回路の出力端子、5.21はHCLゲ
ート回路の基準電位入力端子。 7.23はEel、ゲート回路の電源入力端子、10゜
22.27.31はEel、ゲート回路の制御入力端子
、11は不発明の部分、8.16はエミッタホロワ、9
.17はエミッタ低流である。 32.33,34,35,36.37はEeL集積回路
の入力端子、38,39,40.41はECL集積回路
の出力端子、42は集積回路の制御入力端子である。 L 第4図 第5図 第6図 第7図
Fig. 1 is a circuit diagram showing an embodiment of the present invention, and Fig. 2 is a circuit diagram showing an embodiment of the present invention.
A conceptual diagram of the logical level of the circuit diagram shown in Figure 3, No. 1
Figure 4 is a circuit diagram showing another embodiment of the present invention, Figure 5 is a diagram showing Figure 1 with simple symbols. Figure 6 is a simple symbol representation of Figure 4, and Figure 7 is a conceptual diagram of an integrated circuit that implements the invention. 1.2, 18.19.23, 24, 28.29 are ECL
Gate circuit input terminal, 3, 4, 20° 25.26.3
0 is the output terminal of the BCL gate circuit, and 5.21 is the reference potential input terminal of the HCL gate circuit. 7.23 is Eel, the power input terminal of the gate circuit, 10°22.27.31 is Eel, the control input terminal of the gate circuit, 11 is the uninvented part, 8.16 is the emitter follower, 9
.. 17 is the emitter low flow. 32.33, 34, 35, 36.37 are input terminals of the EeL integrated circuit, 38, 39, 40.41 are output terminals of the ECL integrated circuit, and 42 is a control input terminal of the integrated circuit. L Figure 4 Figure 5 Figure 6 Figure 7

Claims (1)

【特許請求の範囲】[Claims] エミッタ結合による複数の電流切換型ゲートで構成され
る集積回路において、ゲートのエミ、り共通部にエミッ
タt1グランドにコレクタ盆それぞれ接続するようなト
ランジスタを各々のゲートに付加し、付加したトランジ
スタのベース乞すべて共通に接続し、これを谷ゲート回
路で反相している2値の論理レベルのうちの高電位レベ
ル↓9尚く、また低電位レベル以下に制御することt特
徴とする集積回路。
In an integrated circuit consisting of a plurality of current-switching gates with emitter coupling, a transistor is added to each gate such that the emitter T1 ground is connected to the collector tray at the common part of the gate, and the base of the added transistor is 1. An integrated circuit characterized in that all voltages are connected in common and this is controlled by a valley gate circuit to a high potential level ↓9 of binary logical levels having antiphase and below a low potential level.
JP16447183A 1983-09-07 1983-09-07 Ecl integrated circuit Pending JPS6055727A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16447183A JPS6055727A (en) 1983-09-07 1983-09-07 Ecl integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16447183A JPS6055727A (en) 1983-09-07 1983-09-07 Ecl integrated circuit

Publications (1)

Publication Number Publication Date
JPS6055727A true JPS6055727A (en) 1985-04-01

Family

ID=15793804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16447183A Pending JPS6055727A (en) 1983-09-07 1983-09-07 Ecl integrated circuit

Country Status (1)

Country Link
JP (1) JPS6055727A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5013938A (en) * 1989-11-01 1991-05-07 National Semiconductor Corporation ECL cutoff driver circuit with reduced stanby power dissipation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5013938A (en) * 1989-11-01 1991-05-07 National Semiconductor Corporation ECL cutoff driver circuit with reduced stanby power dissipation

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