JPS6052080A - 自己整合型多層レーザ構造体の製造方法 - Google Patents

自己整合型多層レーザ構造体の製造方法

Info

Publication number
JPS6052080A
JPS6052080A JP59167699A JP16769984A JPS6052080A JP S6052080 A JPS6052080 A JP S6052080A JP 59167699 A JP59167699 A JP 59167699A JP 16769984 A JP16769984 A JP 16769984A JP S6052080 A JPS6052080 A JP S6052080A
Authority
JP
Japan
Prior art keywords
layer
self
plane
microns
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59167699A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0446474B2 (Direct
Inventor
Eruton Akurei Donarudo
ドナルド・エルトン・アクレイ
Daburiyuu Eichi Engeruman Reinhaato
レインハート・ダブリユー・エイチ・エンゲルマン
Kobayashi Inoue Teruko
テルコ・コバヤシ・イノウエ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Japan Inc
Original Assignee
Yokogawa Hewlett Packard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Hewlett Packard Ltd filed Critical Yokogawa Hewlett Packard Ltd
Publication of JPS6052080A publication Critical patent/JPS6052080A/ja
Publication of JPH0446474B2 publication Critical patent/JPH0446474B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H10D64/0116—
    • H10P50/648—

Landscapes

  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59167699A 1983-08-12 1984-08-10 自己整合型多層レーザ構造体の製造方法 Granted JPS6052080A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/522,918 US4623427A (en) 1983-08-12 1983-08-12 Means and method for a self-aligned multilayer laser epitaxy structure device
US522918 1983-08-12

Publications (2)

Publication Number Publication Date
JPS6052080A true JPS6052080A (ja) 1985-03-23
JPH0446474B2 JPH0446474B2 (Direct) 1992-07-30

Family

ID=24082915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59167699A Granted JPS6052080A (ja) 1983-08-12 1984-08-10 自己整合型多層レーザ構造体の製造方法

Country Status (3)

Country Link
US (1) US4623427A (Direct)
EP (1) EP0137573A3 (Direct)
JP (1) JPS6052080A (Direct)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3678761D1 (de) * 1985-07-15 1991-05-23 Philips Nv Verfahren zur herstellung einer halbleiteranordnung unter verwendung des aetzens einer ga-as-schicht mittels einer alkalischen loesung von wasserstoffperoxide.
EP0676614B1 (en) * 1994-04-11 2001-06-20 International Business Machines Corporation Calibration standards for profilometers and methods of producing them

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4033796A (en) * 1975-06-23 1977-07-05 Xerox Corporation Method of making buried-heterostructure diode injection laser
US4099305A (en) * 1977-03-14 1978-07-11 Bell Telephone Laboratories, Incorporated Fabrication of mesa devices by MBE growth over channeled substrates
US4166253A (en) * 1977-08-15 1979-08-28 International Business Machines Corporation Heterostructure diode injection laser having a constricted active region
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
US4433417A (en) * 1981-05-29 1984-02-21 Xerox Corporation Nonplanar substrate injection lasers grown in vapor phase epitaxy

Also Published As

Publication number Publication date
US4623427A (en) 1986-11-18
EP0137573A2 (en) 1985-04-17
EP0137573A3 (en) 1988-01-13
JPH0446474B2 (Direct) 1992-07-30

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