JPS605094A - ガリウムガ−ネツト単結晶の製造方法 - Google Patents

ガリウムガ−ネツト単結晶の製造方法

Info

Publication number
JPS605094A
JPS605094A JP58105357A JP10535783A JPS605094A JP S605094 A JPS605094 A JP S605094A JP 58105357 A JP58105357 A JP 58105357A JP 10535783 A JP10535783 A JP 10535783A JP S605094 A JPS605094 A JP S605094A
Authority
JP
Japan
Prior art keywords
gas
single crystal
gallium garnet
garnet single
atmospheric gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58105357A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0114200B2 (enrdf_load_stackoverflow
Inventor
Arata Sakaguchi
阪口 新
Kazuyoshi Watanabe
渡辺 一良
Masahiro Ogiwara
荻原 正宏
Ken Ito
研 伊藤
Toshihiko Riyuuou
俊彦 流王
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP58105357A priority Critical patent/JPS605094A/ja
Publication of JPS605094A publication Critical patent/JPS605094A/ja
Publication of JPH0114200B2 publication Critical patent/JPH0114200B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/28Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58105357A 1983-06-13 1983-06-13 ガリウムガ−ネツト単結晶の製造方法 Granted JPS605094A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58105357A JPS605094A (ja) 1983-06-13 1983-06-13 ガリウムガ−ネツト単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58105357A JPS605094A (ja) 1983-06-13 1983-06-13 ガリウムガ−ネツト単結晶の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP12985688A Division JPH02175685A (ja) 1988-05-27 1988-05-27 ガリウムガーネット単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS605094A true JPS605094A (ja) 1985-01-11
JPH0114200B2 JPH0114200B2 (enrdf_load_stackoverflow) 1989-03-09

Family

ID=14405469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58105357A Granted JPS605094A (ja) 1983-06-13 1983-06-13 ガリウムガ−ネツト単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS605094A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006096619A (ja) * 2004-09-29 2006-04-13 Hitachi Chem Co Ltd 単結晶の製造方法およびその装置
CN102634848A (zh) * 2011-12-20 2012-08-15 元亮科技有限公司 一种石榴石型单晶生长用抽吸装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55136200A (en) * 1979-04-12 1980-10-23 Union Carbide Corp Manufacture of gadolinium garnet
JPS57175799A (en) * 1981-04-17 1982-10-28 Hitachi Metals Ltd Method of producing ggg single crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55136200A (en) * 1979-04-12 1980-10-23 Union Carbide Corp Manufacture of gadolinium garnet
JPS57175799A (en) * 1981-04-17 1982-10-28 Hitachi Metals Ltd Method of producing ggg single crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006096619A (ja) * 2004-09-29 2006-04-13 Hitachi Chem Co Ltd 単結晶の製造方法およびその装置
CN102634848A (zh) * 2011-12-20 2012-08-15 元亮科技有限公司 一种石榴石型单晶生长用抽吸装置

Also Published As

Publication number Publication date
JPH0114200B2 (enrdf_load_stackoverflow) 1989-03-09

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