JPS605014A - 多色輻射の照射による金属ケイ化物層の生成方法 - Google Patents

多色輻射の照射による金属ケイ化物層の生成方法

Info

Publication number
JPS605014A
JPS605014A JP59089595A JP8959584A JPS605014A JP S605014 A JPS605014 A JP S605014A JP 59089595 A JP59089595 A JP 59089595A JP 8959584 A JP8959584 A JP 8959584A JP S605014 A JPS605014 A JP S605014A
Authority
JP
Japan
Prior art keywords
silicon
metal
depositing
silicide
seconds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59089595A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05337B2 (enExample
Inventor
ロナルド・エイ・パウエル
ロナルド・テイ−・フルクス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of JPS605014A publication Critical patent/JPS605014A/ja
Publication of JPH05337B2 publication Critical patent/JPH05337B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/90—
    • H10D64/0112—
    • H10D64/0131—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/004—Annealing, incoherent light
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
JP59089595A 1983-06-20 1984-05-07 多色輻射の照射による金属ケイ化物層の生成方法 Granted JPS605014A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/505,678 US4522845A (en) 1983-06-20 1983-06-20 Process for producing a layer of a metal silicide by applying multichromatic radiation
US505678 1990-04-06

Publications (2)

Publication Number Publication Date
JPS605014A true JPS605014A (ja) 1985-01-11
JPH05337B2 JPH05337B2 (enExample) 1993-01-05

Family

ID=24011352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59089595A Granted JPS605014A (ja) 1983-06-20 1984-05-07 多色輻射の照射による金属ケイ化物層の生成方法

Country Status (2)

Country Link
US (1) US4522845A (enExample)
JP (1) JPS605014A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07107190B2 (ja) * 1984-03-30 1995-11-15 キヤノン株式会社 光化学気相成長方法
US4617237A (en) * 1984-05-14 1986-10-14 Allied Corporation Production of conductive metal silicide films from ultrafine powders
US4661228A (en) * 1984-05-17 1987-04-28 Varian Associates, Inc. Apparatus and method for manufacturing planarized aluminum films
US4670970A (en) * 1985-04-12 1987-06-09 Harris Corporation Method for making a programmable vertical silicide fuse
JPS62186531A (ja) * 1986-02-03 1987-08-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 滑らかな界面を有する集積回路構造を製造するための方法およびそのための装置
US4713358A (en) * 1986-05-02 1987-12-15 Gte Laboratories Incorporated Method of fabricating recessed gate static induction transistors
US5155337A (en) * 1989-12-21 1992-10-13 North Carolina State University Method and apparatus for controlling rapid thermal processing systems
US5122479A (en) * 1991-04-11 1992-06-16 At&T Bell Laboratories Semiconductor device comprising a silicide layer, and method of making the device
JPH08335641A (ja) * 1995-06-06 1996-12-17 Texas Instr Inc <Ti> チタン・ポリサイドｃｍｏｓ回路にオーミック・コンタクトを設ける方法及びそのオーミック・コンタクトを有する集積回路
US6790714B2 (en) 1995-07-03 2004-09-14 Sanyo Electric Co., Ltd. Semiconductor device, display device and method of fabricating the same
US5771110A (en) * 1995-07-03 1998-06-23 Sanyo Electric Co., Ltd. Thin film transistor device, display device and method of fabricating the same
US5908659A (en) * 1997-01-03 1999-06-01 Mosel Vitelic Inc. Method for reducing the reflectivity of a silicide layer
US5888888A (en) * 1997-01-29 1999-03-30 Ultratech Stepper, Inc. Method for forming a silicide region on a silicon body
US6274488B1 (en) 2000-04-12 2001-08-14 Ultratech Stepper, Inc. Method of forming a silicide region in a Si substrate and a device having same
US6420264B1 (en) 2000-04-12 2002-07-16 Ultratech Stepper, Inc. Method of forming a silicide region in a Si substrate and a device having same
KR100414735B1 (ko) * 2001-12-10 2004-01-13 주식회사 하이닉스반도체 반도체소자 및 그 형성 방법
US9040398B2 (en) * 2006-05-16 2015-05-26 Cree, Inc. Method of fabricating seminconductor devices including self aligned refractory contacts

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4417347A (en) * 1981-05-12 1983-11-22 Varian Associates, Inc. Semiconductor processor incorporating blackbody radiation source with constant planar energy flux

Also Published As

Publication number Publication date
JPH05337B2 (enExample) 1993-01-05
US4522845A (en) 1985-06-11

Similar Documents

Publication Publication Date Title
JPS605014A (ja) 多色輻射の照射による金属ケイ化物層の生成方法
JP5931039B2 (ja) 基板に形成された熱処理構造用の方法および装置
KR0155587B1 (ko) 반도체 웨이퍼의 실리콘 층 위에 규화 티탄 층을 형성하는 방법
Fulks et al. Rapid isothermal annealing of ion implantation damage using a thermal radiation source
US5828131A (en) Low temperature formation of low resistivity titanium silicide
JPH01103825A (ja) 薄膜形シリコン半導体装置およびその製造方法
US4468308A (en) Metallic silicide production
US6287927B1 (en) Methods of thermal processing and rapid thermal processing
TW200805504A (en) Methods of heat-treating a semiconductor wafer
Wu et al. Local epitaxy of TiSi2 on (111) Si: Effects due to rapid thermal annealing and to the annealing atmosphere
JPS6072227A (ja) 半導体ウエフア中へド−パントを高温ドライブイン拡散する方法
US4908334A (en) Method for forming metallic silicide films on silicon substrates by ion beam deposition
JP2002502123A (ja) イオン注入したシリコンの急速熱処理方法
JP5054973B2 (ja) 不純物導入方法
JPS6139731B2 (enExample)
Kwong Rapid thermal annealing of co-sputtered tantalum silicide films
US11195732B2 (en) Low thermal budget annealing
Fulks et al. MoSi 2 formation by rapid isothermal annealing
Lee et al. Growth kinetics of Mo, W, Ti, and Co silicides formed by infrared laser heating
JPS6250971B2 (enExample)
Beyers et al. The Effect of Oxygen in Cosputtered (Titanium+ Silicon) Films
KR100270185B1 (ko) 저저항 티타늄 실리사이드 층 형성 방법 및 그를 포함하는 반도체 디바이스
JP2000091260A (ja) 半導体製造方法
JPH088205A (ja) 半導体素子の製造方法
Kasko et al. Influence of Low-Dose Ion-Beam Mixing on CoSi2 Formation