JPH05337B2 - - Google Patents

Info

Publication number
JPH05337B2
JPH05337B2 JP59089595A JP8959584A JPH05337B2 JP H05337 B2 JPH05337 B2 JP H05337B2 JP 59089595 A JP59089595 A JP 59089595A JP 8959584 A JP8959584 A JP 8959584A JP H05337 B2 JPH05337 B2 JP H05337B2
Authority
JP
Japan
Prior art keywords
silicon
metal
depositing
silicide
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59089595A
Other languages
English (en)
Japanese (ja)
Other versions
JPS605014A (ja
Inventor
Ei Paueru Ronarudo
Teii Furukusu Ronarudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of JPS605014A publication Critical patent/JPS605014A/ja
Publication of JPH05337B2 publication Critical patent/JPH05337B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/90—
    • H10D64/0112—
    • H10D64/0131—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/004—Annealing, incoherent light
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
JP59089595A 1983-06-20 1984-05-07 多色輻射の照射による金属ケイ化物層の生成方法 Granted JPS605014A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/505,678 US4522845A (en) 1983-06-20 1983-06-20 Process for producing a layer of a metal silicide by applying multichromatic radiation
US505678 1990-04-06

Publications (2)

Publication Number Publication Date
JPS605014A JPS605014A (ja) 1985-01-11
JPH05337B2 true JPH05337B2 (enExample) 1993-01-05

Family

ID=24011352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59089595A Granted JPS605014A (ja) 1983-06-20 1984-05-07 多色輻射の照射による金属ケイ化物層の生成方法

Country Status (2)

Country Link
US (1) US4522845A (enExample)
JP (1) JPS605014A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07107190B2 (ja) * 1984-03-30 1995-11-15 キヤノン株式会社 光化学気相成長方法
US4617237A (en) * 1984-05-14 1986-10-14 Allied Corporation Production of conductive metal silicide films from ultrafine powders
US4661228A (en) * 1984-05-17 1987-04-28 Varian Associates, Inc. Apparatus and method for manufacturing planarized aluminum films
US4670970A (en) * 1985-04-12 1987-06-09 Harris Corporation Method for making a programmable vertical silicide fuse
JPS62186531A (ja) * 1986-02-03 1987-08-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 滑らかな界面を有する集積回路構造を製造するための方法およびそのための装置
US4713358A (en) * 1986-05-02 1987-12-15 Gte Laboratories Incorporated Method of fabricating recessed gate static induction transistors
US5155337A (en) * 1989-12-21 1992-10-13 North Carolina State University Method and apparatus for controlling rapid thermal processing systems
US5122479A (en) * 1991-04-11 1992-06-16 At&T Bell Laboratories Semiconductor device comprising a silicide layer, and method of making the device
JPH08335641A (ja) * 1995-06-06 1996-12-17 Texas Instr Inc <Ti> チタン・ポリサイドｃｍｏｓ回路にオーミック・コンタクトを設ける方法及びそのオーミック・コンタクトを有する集積回路
US6790714B2 (en) 1995-07-03 2004-09-14 Sanyo Electric Co., Ltd. Semiconductor device, display device and method of fabricating the same
US5771110A (en) * 1995-07-03 1998-06-23 Sanyo Electric Co., Ltd. Thin film transistor device, display device and method of fabricating the same
US5908659A (en) * 1997-01-03 1999-06-01 Mosel Vitelic Inc. Method for reducing the reflectivity of a silicide layer
US5888888A (en) * 1997-01-29 1999-03-30 Ultratech Stepper, Inc. Method for forming a silicide region on a silicon body
US6274488B1 (en) 2000-04-12 2001-08-14 Ultratech Stepper, Inc. Method of forming a silicide region in a Si substrate and a device having same
US6420264B1 (en) 2000-04-12 2002-07-16 Ultratech Stepper, Inc. Method of forming a silicide region in a Si substrate and a device having same
KR100414735B1 (ko) * 2001-12-10 2004-01-13 주식회사 하이닉스반도체 반도체소자 및 그 형성 방법
US9040398B2 (en) * 2006-05-16 2015-05-26 Cree, Inc. Method of fabricating seminconductor devices including self aligned refractory contacts

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4417347A (en) * 1981-05-12 1983-11-22 Varian Associates, Inc. Semiconductor processor incorporating blackbody radiation source with constant planar energy flux

Also Published As

Publication number Publication date
JPS605014A (ja) 1985-01-11
US4522845A (en) 1985-06-11

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Publication Publication Date Title
JPH05337B2 (enExample)
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Okamoto et al. Titanium silicidation by halogen lamp annealing
Brillson et al. Titanium–silicon and silicon dioxide reactions controlled by low temperature rapid thermal annealing
Wilson et al. Fast diffusion of As in polycrystalline silicon during rapid thermal annealing
Moore et al. Titanium disilicide formation by wide‐area electron beam irradiation
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JPS6139731B2 (enExample)
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Fulks et al. MoSi 2 formation by rapid isothermal annealing
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Burte et al. Cobalt disilicide formed by rapid thermal annealing and throughmetal arsenic implantation
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Daneshvar et al. The rapid isothermal annealing of tantalum silicide
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Peikert et al. The effect of silicon ion implantation on the structure of tantalum–silicon contacts
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