JPS6045994A - Information storing method by prom - Google Patents

Information storing method by prom

Info

Publication number
JPS6045994A
JPS6045994A JP58153903A JP15390383A JPS6045994A JP S6045994 A JPS6045994 A JP S6045994A JP 58153903 A JP58153903 A JP 58153903A JP 15390383 A JP15390383 A JP 15390383A JP S6045994 A JPS6045994 A JP S6045994A
Authority
JP
Japan
Prior art keywords
page
information
area
prom
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58153903A
Other languages
Japanese (ja)
Inventor
Kyukichi Yamashita
山下　久吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Toshiba TEC Corp
Original Assignee
Tokyo Sanyo Electric Co Ltd
Tokyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Tokyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP58153903A priority Critical patent/JPS6045994A/en
Publication of JPS6045994A publication Critical patent/JPS6045994A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To store information without battery backup by forming a page using information area in a part of a PROM to write page using information and writing the information in a corresponding page area. CONSTITUTION:The page using information area is formed in a part of the PROM, and at the writing time, ''0'' is written in the 1st bit of the page using information area and the information is written in one page out of pages of the PROM corresponding to the bit. Similar operation is repeated in each page and the information writing based upon ultraviolet rays or the like is executed without battery backup. At the reading time, the information in the corresponding page is read out on the basis of the bit information of the page using information area. When overlapped writing is to be tried to a certain page, the original page is used without rewriting the page using information when the bit of the page using information area of the page is ''0''.

Description

【発明の詳細な説明】 発明の技術分野 本発明は、バッテリーによるバックアップなしで情報を
記憶させうるようにしたＦＲＯＭによる情報記憶方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to an information storage method using FROM, which allows information to be stored without battery backup.

技術的背景およびその問題点 従来、電源を切っても消滅させたくない書替可能データ
を半導体メモリーを用いて保持する場合は、Ｃ−ＭＯＳ
等の低消費電力のＲＡＭを用いてバッテリーによりバッ
クアップしている。しかしながら、このような手段はロ
スト高になり、また、バッテリーの保守が必要である等
の問題がある。Technical Background and Problems Traditionally, when using semiconductor memory to retain rewritable data that you do not want to erase even when the power is turned off, C-MOS
It is backed up by a battery using low power consumption RAM such as. However, such a method has problems such as high loss and the need for battery maintenance.

発明の目的 本発明は、バッテリーによるバックアップなしで不揮発
性ＲＡＭを構成することができるＦＲＯＭによる情報記
憶方法を提供することを目的とする。OBJECTS OF THE INVENTION An object of the present invention is to provide an information storage method using FROM, which can configure a nonvolatile RAM without battery backup.

発明の実施例 本発明の一実施例を図面に基いて説明する。本実施例は
紫外線消去ＥＰＲＯＭを用いたものであり、このＥＰＲ
ＯＭは書込みの状態では全てのビットが゛ｌ″の状態に
なっているものである。しかして、■ワード８ビットで
００１８〜７Ｆ１８の番地を持っており、００〜０３番
地をページ使用情報エリヤとし、他の部分は４番地毎に
区切ってページエリヤとする。Embodiment of the Invention An embodiment of the present invention will be explained based on the drawings. This example uses an ultraviolet erased EPROM, and this EPR
In OM, all bits are in the state of "1" in the write state. Therefore, ■word is 8 bits and has addresses 0018 to 7F18, and addresses 00 to 03 are used as page usage information area. The other part is divided into every four addresses and is used as a page area.

しかして、第１回目の書込みでは、００番地のビット６
　（１ページ情報ビツト）を′０″に書き。Therefore, in the first write, bit 6 of address 00
Write (1 page information bit) to '0''.

１ページ目のページエリヤにデータを書き込む。Write data to the page area of the first page.

そして、読出しの場合には、ページ使用情報エリヤの状
態を読む。この状態では、データは１ページに書かれて
いるとし、１ページの読み出しを行なう。In the case of reading, the state of the page usage information area is read. In this state, it is assumed that data is written on one page, and one page is read.

第２回目の書込みは、ページ使用情報エリヤを読み出し
、現ページが１ページであることを知り、次の書き込み
は２ページであることを知り、２ページ情報ビツトを′
０″にし、２ページ目のページエリヤにデータを書き込
む。The second write reads the page usage information area, learns that the current page is page 1, knows that the next write will be page 2, and reads the 2nd page information bit.
0'' and write data to the page area of the second page.

また、あるページに関し、前のデータに対して重ね書き
を行ないうるとき、すなわち、前のデータに対してさら
に所定ビットを゛Ｏ″にすればよいデータであるときに
は、ページ使用情報を変えずにちとのページを用いる。In addition, when it is possible to overwrite previous data on a certain page, that is, when the data requires further setting a predetermined bit to "O" for the previous data, it is possible to overwrite the previous data without changing the page usage information. Use Chito's page.

このようにして、順次ページ毎の書き込みが行なわれる
が、読み出しの場合は、最終的に記憶されているページ
を読み出す。In this way, writing is performed page by page sequentially, but in the case of reading, the finally stored page is read.

なお、本実施例においては、ページ使用情報はＩＦまで
あり、ページもＩＦ（３２ページ）まで存する。また、
ＦＲＯＭとしてはヒユーズＦＲＯＭの使用も可能である
。In this embodiment, the page usage information includes up to IF, and the pages also include up to IF (32 pages). Also,
A fuse FROM can also be used as the FROM.

発明の効果 本発明は、上述のようにＦＲＯＭの一部にページ使用情
報エリヤを形成するとともに他の部分にそれに対応する
′ページエリヤを形成し、ページ使用情報を書き込むと
ともに対応するページエリヤにデータを書き込むように
したので、バッテリーによるバックアップなしで情報を
記憶させることができ、そのときの情報の信頼性もきわ
めて、１１いものである。また、重ね書きを行なうこと
により、使用時の容量を増加させることができるもので
′ある。Effects of the Invention As described above, the present invention forms a page usage information area in a part of FROM, and forms a corresponding 'page area in another part, writes page usage information, and writes data in the corresponding page area. Since the information is written in the memory, the information can be stored without battery backup, and the reliability of the information at that time is also extremely high. Furthermore, by overwriting, the capacity during use can be increased.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本発明の一実施例を示すＲＡＭマツプである。 出　願　人　東京電気株式会社 The drawing is a RAM map showing one embodiment of the present invention. Applicant: Tokyo Electric Co., Ltd.

Claims (1)

【特許請求の範囲】 １、ＦＲＯＭの一部にページ使用情報エリヤを形成する
とともに他の部分を各ページに対応するページエリヤと
し、書込みの場合には前記ページ使用情報エリヤにペー
ジ使用情報を書込むとともに対応するページエリヤに新
データを書き込み、読み出しの場合にはページ使用情報
エリヤのページ使用情報を参照して対応するページエリ
ヤのデータを読み出すようにしたことを特徴とするＦＲ
ＯＭによる情報記憶方法。 ２、書込みの際に最終ページの内容を読み出して書き込
むべきデータと比較し、重ね書き可能な場合にはページ
変更をせずに重ね書きするようにしたことを特徴とする
特許請求の範囲第１項記載のＦＲＯＭによる情報記憶方
法。[Claims] 1. A page usage information area is formed in a part of FROM, and the other part is used as a page area corresponding to each page, and in the case of writing, page usage information is written in the page usage information area. The FR is characterized in that when reading data, new data is written in the corresponding page area, and when reading data, the data in the corresponding page area is read by referring to the page usage information in the page usage information area.
Information storage method using OM. 2. At the time of writing, the content of the last page is read and compared with the data to be written, and if overwriting is possible, overwriting is performed without changing the page. Information storage method using FROM as described in section.
JP58153903A 1983-08-22 1983-08-22 Information storing method by prom Pending JPS6045994A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58153903A JPS6045994A (en) 1983-08-22 1983-08-22 Information storing method by prom

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58153903A JPS6045994A (en) 1983-08-22 1983-08-22 Information storing method by prom

Publications (1)

Publication Number Publication Date
JPS6045994A true JPS6045994A (en) 1985-03-12

Family

ID=15572623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58153903A Pending JPS6045994A (en) 1983-08-22 1983-08-22 Information storing method by prom

Country Status (1)

Country Link
JP (1) JPS6045994A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278697A (en) * 1987-04-23 1988-11-16 Nippon Steel Corp Flux cored wire for gas shielded arc welding
JP2008123643A (en) * 2006-11-15 2008-05-29 Fujitsu Ltd Semiconductor memory device and control method of semiconductor memory device
JP2009157807A (en) * 2007-12-27 2009-07-16 Tdk Corp Memory controller, flash memory system provided with memory controller, and method for controlling flash memory
JP2010165165A (en) * 2009-01-15 2010-07-29 Seiko Instruments Inc Memory device and memory access method
JP2010231872A (en) * 2009-03-30 2010-10-14 Toppan Printing Co Ltd Nonvolatile semiconductor memory
JP2010238278A (en) * 2009-03-30 2010-10-21 Toppan Printing Co Ltd Nonvolatile semiconductor memory device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278697A (en) * 1987-04-23 1988-11-16 Nippon Steel Corp Flux cored wire for gas shielded arc welding
JP2008123643A (en) * 2006-11-15 2008-05-29 Fujitsu Ltd Semiconductor memory device and control method of semiconductor memory device
JP2009157807A (en) * 2007-12-27 2009-07-16 Tdk Corp Memory controller, flash memory system provided with memory controller, and method for controlling flash memory
JP2010165165A (en) * 2009-01-15 2010-07-29 Seiko Instruments Inc Memory device and memory access method
JP2010231872A (en) * 2009-03-30 2010-10-14 Toppan Printing Co Ltd Nonvolatile semiconductor memory
JP2010238278A (en) * 2009-03-30 2010-10-21 Toppan Printing Co Ltd Nonvolatile semiconductor memory device

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