JPS6044392B2 - Electron beam evaporation equipment - Google Patents

Electron beam evaporation equipment

Info

Publication number
JPS6044392B2
JPS6044392B2 JP11058377A JP11058377A JPS6044392B2 JP S6044392 B2 JPS6044392 B2 JP S6044392B2 JP 11058377 A JP11058377 A JP 11058377A JP 11058377 A JP11058377 A JP 11058377A JP S6044392 B2 JPS6044392 B2 JP S6044392B2
Authority
JP
Japan
Prior art keywords
electron beam
spot
control section
vapor deposition
electromagnet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11058377A
Other languages
Japanese (ja)
Other versions
JPS5443883A (en
Inventor
正親 鳴島
精 本間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11058377A priority Critical patent/JPS6044392B2/en
Publication of JPS5443883A publication Critical patent/JPS5443883A/en
Publication of JPS6044392B2 publication Critical patent/JPS6044392B2/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • C23C14/30Vacuum evaporation by wave energy or particle radiation by electron bombardment

Description

【発明の詳細な説明】 本発明は電子ビーム蒸着装置に関する。[Detailed description of the invention] The present invention relates to an electron beam evaporation apparatus.

電子ビーム蒸着装置は、たとえばアルミニウム等の蒸着
材料の表面に電子ビーム・スポットを照射して蒸着材料
を蒸発させる装置である。
An electron beam evaporation apparatus is an apparatus that evaporates the evaporation material by irradiating an electron beam spot onto the surface of the evaporation material, such as aluminum.

従来の電子ビーム蒸着装置は、円形の電子ビーム・スポ
ットを永久磁石により楕円形に広げ、この楕円形の電子
ビーム・スポットで蒸着材料の表面を加熱する構造を有
している。し力化ながら、このような従来の装置におい
ては、蒸着材料を入れた容器すなわちハースは円形であ
るために、電子ビーム・スポットをその短径方向に大き
く走査した場合、ハース壁に接触しハースを溶解するこ
とがある。
A conventional electron beam evaporation apparatus has a structure in which a circular electron beam spot is spread into an ellipse by a permanent magnet, and the surface of the evaporation material is heated with this elliptical electron beam spot. However, in such conventional devices, the container containing the evaporation material, that is, the hearth, is circular, so if the electron beam spot is scanned widely in the short axis direction, it will come into contact with the hearth wall and cause damage to the hearth. May dissolve.

この溶解を防止しようとすると必然的に電子ビーム・ス
ポットの走査面積が小さくなり、この結果、蒸着速度が
変化しやすく再現性のよい蒸着膜の形成ができない。本
発明の目的はこのような従来の欠点を解消し、電子ビー
ム・スポットの走査面積が大きく、さらに蒸着速度の変
化を抑えられるような電子ビーム蒸着装置を提供するこ
とにある。上記目的を達成するための本発明の構成は、
円形のビーム・スポットをX方向に走査させる手段と、
電子ビーム・スポットのY方向の径を変化させる手段と
を備え、X方向の走査に判つて電子ビーム・スポット径
をY方向に変化させて蒸着材料に照射させるように構成
する。
If an attempt is made to prevent this dissolution, the scanning area of the electron beam spot will inevitably become smaller, and as a result, the deposition rate will tend to change, making it impossible to form a deposited film with good reproducibility. SUMMARY OF THE INVENTION It is an object of the present invention to provide an electron beam evaporation apparatus which eliminates such conventional drawbacks, allows a large scanning area of an electron beam spot, and further suppresses changes in evaporation rate. The structure of the present invention for achieving the above object is as follows:
means for scanning a circular beam spot in the X direction;
and means for changing the diameter of the electron beam spot in the Y direction, and is configured to change the electron beam spot diameter in the Y direction when scanning in the X direction and irradiate the vapor deposition material.

以下、図面に示す実施例により本発明を詳細に説明する
Hereinafter, the present invention will be explained in detail with reference to embodiments shown in the drawings.

第1図および第2図に示すように、この電子ビーム蒸着
装置1は、ブロック状の装置本体2を有し、この装置本
体2上面の長寸方向の一端寄りにJは、たとえばアルミ
ニウムなどの蒸着材料3を入れる容器、すなわちハース
4を設け、また、該上面の長寸方向の他端寄りに位置す
る穴5の下部には、該蒸着材料3の表面を加熱しかつ蒸
発させるための電子ビーム発生用のフィラメント6を設
け;ている。
As shown in FIGS. 1 and 2, this electron beam evaporation apparatus 1 has a block-shaped apparatus main body 2, and J is made of aluminum or the like near one end in the longitudinal direction of the upper surface of this apparatus main body 2. A container for storing the vapor deposition material 3, that is, a hearth 4 is provided, and a hole 5 located near the other end of the upper surface in the longitudinal direction is provided with an electron beam for heating and vaporizing the surface of the vapor deposition material 3 at the lower part of the hole 5. A filament 6 for beam generation is provided.

そ[、て、穴5ないし蒸着材料3をX方向に挟むように
永久磁石9と電磁石7を配置してX方向ビーム制御部を
構成している。また、前記電磁石7の両側には前記穴5
を挟むように一対の電磁石8,8を配置し、これらでY
方向ビーム制御部を構成している。そして、図外の電流
装置により、前記電磁石7には第4図に示す特性の電流
が供給され、また電磁石8,8には第5図に示す特性の
電流が供給されるようになつている。
Then, a permanent magnet 9 and an electromagnet 7 are arranged so as to sandwich the hole 5 or the vapor deposition material 3 in the X direction to constitute an X direction beam control section. Further, the holes 5 are provided on both sides of the electromagnet 7.
A pair of electromagnets 8, 8 are arranged so as to sandwich Y.
It constitutes a directional beam control section. A current device (not shown) supplies the electromagnet 7 with a current having the characteristics shown in FIG. 4, and the electromagnets 8, 8 with a current having the characteristics shown in FIG. .

次に、上記構成を有する電子ビーム蒸着装置1により生
ずる電子ビーム・スポット11の走査状態を第2図ない
し第5図により説明する。
Next, the scanning state of the electron beam spot 11 produced by the electron beam evaporation apparatus 1 having the above configuration will be explained with reference to FIGS. 2 to 5.

先ず、第2図のようにフィラメント6から発生した電子
ビーム10は、X方向制御部のみを基準電流で作動させ
ている状態においては、ビーム10は図示のように円弧
を描いて蒸着材料3の略中応位置に照射されて円形のス
ポットを形成する。
First, as shown in FIG. 2, when the electron beam 10 generated from the filament 6 is operating only the X-direction control section with the reference current, the beam 10 traces an arc as shown in the figure and reaches the evaporation material 3. A circular spot is formed by irradiating the beam at a substantially central location.

次に、第4図に示すようにX方向ビーム制御部の電磁石
7に流す電流の量を第3図のb位置で最も小さく、c位
置で最も大きく、a位置で中位の大きさになるような流
し方をする。これにより電子ビーム●スポットは蒸着材
料3上でx方向に走査される。これと同時にY方向ビー
ム制御部の電磁石8,8に流す電流の量を第5図に示す
ように増減操作してやり、第3図のa位置で最も電流の
量が大きくなるようにし、b位置、c位置では小さくな
るようにする。
Next, as shown in Figure 4, the amount of current flowing through the electromagnet 7 of the X-direction beam control section is the smallest at position b in Figure 3, the largest at position c, and medium at position a. Flow like this. As a result, the electron beam ● spot is scanned on the vapor deposition material 3 in the x direction. At the same time, the amount of current flowing through the electromagnets 8, 8 of the Y-direction beam control section is increased or decreased as shown in FIG. 5, so that the amount of current is the largest at position a in FIG. Make it smaller at position c.

そして、該Y方向の電磁石8,8の電流操作をX方向の
電磁石7の電流操作に同期させて繰り返し行うことによ
り、電子ビーム10にかけられる磁界が規則的に変化し
、その結果電子.ビーム●スポット11は、第3図a位
置でそのY方径が最大の楕円となり、b位置およびc位
置では小さな円となる。なお、図ではa位置におけるビ
ームのぼけによりX方向にもビーム径が若干大きくなる
こを示している。したがつて、XおよびYの各方向ビー
ム制御部の電磁石7,8の双方の電流の量を連続的に変
化させていくことにより、電子ビーム・スポットはX方
向に走査されながらそのY方向の楕円径が変化され、こ
れから蒸着材料3の表面をなめるように電子ビーム10
が照射され、蒸着材料3はこのスポット11の熱により
溶解され、あらかじめ決められた方向に蒸発し、蒸着を
実現することができる。
By repeating the current operation of the electromagnets 8, 8 in the Y direction in synchronization with the current operation of the electromagnet 7 in the X direction, the magnetic field applied to the electron beam 10 changes regularly, and as a result, the electron beam 10 changes regularly. The beam ● spot 11 becomes an ellipse with the largest Y diameter at position a in FIG. 3, and becomes a small circle at positions b and c. Note that the figure shows that the beam diameter also becomes slightly larger in the X direction due to beam blurring at position a. Therefore, by continuously changing the amount of current in both the electromagnets 7 and 8 of the X and Y direction beam control sections, the electron beam spot is scanned in the X direction while being scanned in the Y direction. The ellipse diameter is changed, and the electron beam 10 is applied so as to lick the surface of the vapor deposition material 3.
is irradiated, the vapor deposition material 3 is melted by the heat of this spot 11, and evaporates in a predetermined direction, thereby achieving vapor deposition.

以上の説明から明らかなように、本発明によれ・ば、蒸
着材料の表面に照射される電子ビーム・スポットを、そ
の形状をY方向ビーム制御部によつてY方向の径寸法を
変化させながらx方向ビーム制御部によつてX方向に走
査することができる。
As is clear from the above description, according to the present invention, the shape of the electron beam spot irradiated onto the surface of the vapor deposition material is changed while the diameter dimension in the Y direction is changed by the Y direction beam control section. The x-direction beam control section allows scanning in the X-direction.

したがつて、従来のように一定した寸法の楕円の電子ビ
ーム・スポットを用いる場合と異なり、ハースに触れな
いでしかもハース内にある蒸着材料の表面をほぼ全域を
なめるように電子ビームを照射することができる。すな
わち、電子ビーム・スポットの走査面積が拡大され、こ
の結果蒸着材料は均一に安定した状態で加熱溶解され、
安定した蒸着材料の蒸発ができ、これにより蒸着速度の
安定性および再現性のよい蒸着膜の形成ができる。
Therefore, unlike the conventional case where an elliptical electron beam spot with a constant size is used, the electron beam is irradiated so as to lick almost the entire surface of the evaporation material inside the hearth without touching the hearth. be able to. In other words, the scanning area of the electron beam spot is expanded, and as a result, the evaporation material is heated and melted in a uniform and stable state.
The evaporation material can be evaporated in a stable manner, thereby making it possible to form a deposited film with a stable evaporation rate and good reproducibility.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の電子ビーム蒸着装置の平面図、第2図
は第1図A−N線に沿つて矢印方向にみた垂直断面図、
第3図は蒸着材料の表面に見られる電子ビーム・スポッ
トの状態を示す説明拡大図、第4図は電磁石7に流す電
流の変化状態を示す図、第5図は電磁石8に流す電流の
変化状態を示す図である。 1・・・電子ビーム蒸着装置、2・・・装置本体、3・
・・蒸着材料、4・・・ハース、5・・・穴、6・・・
フィラメント、7・・・X方向ビーム制御部の電磁石、
8・・・Y方向ビーム制御部の電磁石、9・・・永久磁
石、10・・電子ビーム、11・・・電子ビーム・スポ
ット。
FIG. 1 is a plan view of the electron beam evaporation apparatus of the present invention, FIG. 2 is a vertical sectional view taken along line A-N in FIG. 1 in the direction of the arrow,
FIG. 3 is an explanatory enlarged view showing the state of the electron beam spot seen on the surface of the evaporation material, FIG. 4 is a diagram showing changes in the current flowing through the electromagnet 7, and FIG. 5 is a diagram showing changes in the current flowing through the electromagnet 8. It is a figure showing a state. 1... Electron beam evaporation device, 2... Device main body, 3.
... Vapor deposition material, 4... Hearth, 5... Hole, 6...
Filament, 7... Electromagnet of X direction beam control section,
8... Electromagnet of Y direction beam control section, 9... Permanent magnet, 10... Electron beam, 11... Electron beam spot.

Claims (1)

【特許請求の範囲】[Claims] 1 ハース内の蒸着材料を加熱し蒸発させるための電子
ビーム・スポットを発生するビーム発生源と、前記電子
ビームをX方向に挟むように配置し供給電流変化によつ
て前記電子ビームを蒸着材料のX方向に走査する永久磁
石および電磁石を有するX方向ビーム制御部と、前記電
子ビームをY方向に挟むように配置し供給電流変化によ
つて電子ビームのY方向のビーム径を変化させる一対の
電磁石からなるY方向ビーム制御部とを備え、前記X、
Yの各ビーム制御部は相互に同期して動作し得るように
構成したことを特徴とする電子ビーム蒸着装置。
1. A beam generation source that generates an electron beam spot for heating and vaporizing the vapor deposition material in the hearth, and a beam source arranged to sandwich the electron beam in the an X-direction beam control unit that includes a permanent magnet and an electromagnet that scan in the X direction; and a pair of electromagnets that are arranged to sandwich the electron beam in the Y direction and change the beam diameter of the electron beam in the Y direction by changing the supplied current. a Y-direction beam control section consisting of the X,
An electron beam evaporation apparatus characterized in that each beam control section of Y is configured to operate in synchronization with each other.
JP11058377A 1977-09-16 1977-09-16 Electron beam evaporation equipment Expired JPS6044392B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11058377A JPS6044392B2 (en) 1977-09-16 1977-09-16 Electron beam evaporation equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11058377A JPS6044392B2 (en) 1977-09-16 1977-09-16 Electron beam evaporation equipment

Publications (2)

Publication Number Publication Date
JPS5443883A JPS5443883A (en) 1979-04-06
JPS6044392B2 true JPS6044392B2 (en) 1985-10-03

Family

ID=14539515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11058377A Expired JPS6044392B2 (en) 1977-09-16 1977-09-16 Electron beam evaporation equipment

Country Status (1)

Country Link
JP (1) JPS6044392B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098128U (en) * 1983-12-09 1985-07-04 クラリオン株式会社 Tape wrapping prevention device
JPS62207860A (en) * 1986-03-07 1987-09-12 Jeol Ltd Vacuum deposition apparatus
US5012064A (en) * 1990-06-29 1991-04-30 The Boc Group, Inc. Electron beam evaporation source

Also Published As

Publication number Publication date
JPS5443883A (en) 1979-04-06

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