JPS6041245A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6041245A
JPS6041245A JP58149818A JP14981883A JPS6041245A JP S6041245 A JPS6041245 A JP S6041245A JP 58149818 A JP58149818 A JP 58149818A JP 14981883 A JP14981883 A JP 14981883A JP S6041245 A JPS6041245 A JP S6041245A
Authority
JP
Japan
Prior art keywords
pellet
semiconductor
coating material
crack
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58149818A
Other languages
Japanese (ja)
Inventor
Kazuhide Sato
和秀 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58149818A priority Critical patent/JPS6041245A/en
Publication of JPS6041245A publication Critical patent/JPS6041245A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

PURPOSE:To prevent a crack and the displacement of wirings from occurring by bonding a filmy protective coating material on the surface of a semiconductor pellet so that part is extended from the outer periphery of the pellet toward outside. CONSTITUTION:A semiconductor pellet 1 is mounted on a bed 2 by mounting paste 4. A filmlike coating material 5 is bonded to the surface of the pellet 1. The shape of the material 5 is larger than the pellet 1, and a cutout is formed so as not to cover the portion of a bonding pad 7. Inner leads 3 are electrically connected to the pads via bonding wirings 6. According to this, it can prevent a resin crack, a pellet crack, a PSG crack and the displacement of aluminum wirings disconnection can hardly occur. When the material 5 is increased in thickness by the prescribed degree, a software error due to alpha-ray can be prevented.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体４レツドを樹脂封止して形成する樹脂封
止型の半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a resin-sealed semiconductor device formed by resin-sealing four semiconductor leads.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

樹脂封止型の半導体装置においては、製造後の環境変化
等により生ずる応力のため（、樹脂部分に亀裂が生ずる
レジンクラックや、半導体ペレット自体に亀裂が生ずる
ペレットクラックや、半導体ペレット表面のＰＳＧ膜に
亀裂が生ずるＰＳＧクラック等が起こるという問題があ
る。また半導体ペレットにゼンデイングワイヤが触れる
ペレットタッチにより、動作不良を起こすという問題が
ある。In resin-sealed semiconductor devices, due to stress caused by environmental changes after manufacturing (resin cracks where the resin part is cracked, pellet cracks where the semiconductor pellet itself is cracked, PSG film on the surface of the semiconductor pellet). There is a problem that cracks occur in the PSG, such as PSG cracks.Furthermore, there is a problem that malfunctions occur due to pellet touch in which the winding wire comes into contact with the semiconductor pellet.

さらにα線によるソフトエラーにより半導体装置が誤動
作するとも・５問題がある。Furthermore, there are five problems in that semiconductor devices malfunction due to soft errors caused by alpha rays.

これらの問題に対して従来は■低応力樹脂を用いて樹脂
封止する、■ＪＣＲ（ジャンクションコーティングレジ
ン）やポリイミド等によりポツティングした後樹脂封止
する、■感光性プリイミドをフォトエツチングによりｐ
ｚ　Ｘングして保護膜を形成する、■半導体ペレット周
囲に枠を設けて歪を防止するという対策がとられて−・
た。Conventionally, to solve these problems, the following methods have been used: 1. Resin-sealing using low-stress resin, 2. Potting with JCR (junction coating resin) or polyimide, and then resin-sealing, 2.
Countermeasures were taken to prevent distortion by forming a protective film by
Ta.

しかしながら■の方法では、半導体ペレットのサイズが
大きくなってくると、レジンクラックは発生しにく（・
が、逆に内部で一ンデイングワイヤが切れるワイヤオー
プンが発生しやすくなると（・５問題があった。同様に
■の方法にお−・ても、ＪＣＢ、ポリイミド等が２ンデ
イングワイヤに接触するために、ワイヤオープンが発生
しゃ丁いという問題があった。また■の方法では、ポリ
イミドのフォトエツチング時の応力によりウェーハの反
りを生じやすく、ウェーハの状態で不良ペレットまで保
蝕膜を形成するために無駄が生ずるという問題があった
。さらに■の方法では、製造工程が複雑になるという問
題があった。However, with the method (■), as the size of the semiconductor pellet increases, resin cracks are less likely to occur (・
However, on the other hand, if a wire open occurs where the first binding wire is broken internally (problem 5).Similarly, even with method In addition, with method (2), the stress during photoetching of polyimide tends to cause wafer warping, and it is difficult to form a protective film on defective pellets while the wafer is still in use. There was a problem in that there was waste due to the process.Furthermore, method (2) had a problem in that the manufacturing process became complicated.

〔発明の目的〕[Purpose of the invention]

本発明は上記事情を考慮してなされたもので、レジンク
ラック、ペレットクラック、ＰＳＧクラックが発生しに
＜＜、かつペレットタッチやワイヤオープンが生じに＜
＜、さらにソフトエラーも防止できる半導体装置を提供
することを目的とする。The present invention has been made in consideration of the above circumstances, and is designed to prevent resin cracks, pellet cracks, and PSG cracks from occurring, and to prevent pellet touching and wire opens from occurring.
Furthermore, it is an object of the present invention to provide a semiconductor device that can also prevent soft errors.

〔発明の概要〕[Summary of the invention]

この目的を達成するために本発明による半導体装置は、
半導体ペレット表面に、フィルム状保獲コーティング材
を、その一部が前記半導体ペレット外周より外側に張り
出すようにして接着したことを特徴とする。To achieve this objective, the semiconductor device according to the present invention includes:
The present invention is characterized in that a film-like retention coating material is adhered to the surface of the semiconductor pellet in such a manner that a part of the film-like coating material extends beyond the outer periphery of the semiconductor pellet.

〔発明の実施例〕[Embodiments of the invention]

本発明の一実施例による半導体装置を第１図、第２図に
示す。ベッド２上に半導体ペレッｌ−１がマウント用ペ
ースト４（例えば銀ペースト）によりマウントされる。A semiconductor device according to an embodiment of the present invention is shown in FIGS. 1 and 2. A semiconductor pellet l-1 is mounted on the bed 2 using a mounting paste 4 (for example, silver paste).

半導体ペレット１の表１ｊＴ　ＶＣフィルム状コーテイ
ング材５を接着する。フィルム状コーテイング材５の形
状は、第３図に示すように、半導体ペレット１よりひと
まわり大きく、ゼンデイングノＲツＰ７の部分がおおわ
れないように切り込みが入れられている。この形状はゼ
ンディング・ぞツＰ７の部分がおおわれなければよいの
で、第４図のようにその部分を打ち抜いた形状でもよい
。ジンディングワイヤ６により、インナーリード３とぎ
ンディングノぐツＰ７は電気的に接続される。Table 1jT of semiconductor pellet 1 VC film-like coating material 5 is adhered. As shown in FIG. 3, the shape of the film-like coating material 5 is slightly larger than the semiconductor pellet 1, and a cut is made so as not to cover the bending groove P7. Since this shape does not need to cover the part of the senting groove P7, it may be a shape in which that part is punched out as shown in FIG. The inner lead 3 and the binding hole P7 are electrically connected by the binding wire 6.

本実施例による半導体装置の製造方法の一具体例につい
て説明する。まずフィルム状コーテイング材５を第３図
または第４図の形状にポンチによす打チ抜く。次にノマ
キュームビンセッ）Ｋよす打ち抜かれたフィルム状樹脂
コーテイング材５を半（３〕 導体ペレット５０表面に移動させ、顕微鏡または工業用
テレビ等を用いて位置決めし、半導体ペレット１の表面
にはりつげる。フィルム状コーテイング材５は半導体ペ
レットｌよりひとまわり大きいため、最も樹脂による歪
のかかりやすい部分、ジンディングワイヤ６が接触しや
すい部分、α線が侵入Ｉ−ではならない部分をおおうこ
とになる。A specific example of the method for manufacturing a semiconductor device according to this embodiment will be described. First, the film-like coating material 5 is punched into the shape shown in FIG. 3 or 4. Next, the punched film-like resin coating material 5 is moved onto the surface of the conductor pellet 50, positioned using a microscope or industrial television, etc., and placed on the surface of the semiconductor pellet 1. Since the film-like coating material 5 is slightly larger than the semiconductor pellet L, it is necessary to cover the parts that are most likely to be strained by the resin, the parts that the jinding wire 6 is likely to come into contact with, and the parts where α rays should not penetrate I-. Become.

このように張り出す形状であるため位置決めにおいて、
高精度を必要としない。次にフィルム状コーテイング材
５を熱硬化するため、例えば１５０℃で（資）分間加熱
する。この時半導体ペレッ）１より張り出したフィルム
状コーテイング材５は自重によりたれ下がる。Because of this overhanging shape, positioning is difficult.
Does not require high precision. Next, in order to thermoset the film-like coating material 5, it is heated, for example, at 150° C. for several minutes. At this time, the film-like coating material 5 protruding from the semiconductor pellet 1 sags due to its own weight.

フィルム状コーテイング材５の接着は上述したように半
導体ペレットｌをペッド２にマウントした後が望ましい
が、ウェーハのダイシング前、またはダイシング前、ま
たはワイヤノンディング後でもよい。また接着時には半
導体ペレット１の表面との間に空気やゴミ等なまきこま
ないようにする。Although it is desirable that the film-like coating material 5 is bonded after the semiconductor pellets 1 are mounted on the ped 2 as described above, it may be done before wafer dicing, before dicing, or after wire nonding. Also, when adhering, make sure that air, dust, etc. are not mixed in between the surface of the semiconductor pellet 1 and the surface of the semiconductor pellet 1.

（４） また、α線によるソフトエラー防止のためにはフィルム
状コーテイング材５は４０μ以上の厚さが望ましい。(4) Furthermore, in order to prevent soft errors caused by α rays, it is desirable that the film-like coating material 5 has a thickness of 40 μm or more.

また半導体ペレツ）１が大型の場合、半導体ペレット１
の側面をマウント用ペースト４により完全に保饅する方
法が用いられるが、従来このマウント用ペースト４が半
導体ペレットｌの表面にまわり込むという問題が生じて
いた。半導体ペレット１のマウント前にフィルム状コー
テイング材５を接着すれば、このまわり込みを防止でき
る。In addition, if semiconductor pellets) 1 are large, semiconductor pellets 1
A method is used in which the sides of the semiconductor pellet 1 are completely protected by a mounting paste 4, but conventionally there has been a problem that the mounting paste 4 wraps around the surface of the semiconductor pellet 1. By adhering the film-like coating material 5 before mounting the semiconductor pellet 1, this wrap-around can be prevented.

〔発明の効果〕〔Effect of the invention〕

以上の通り本発明によれば、レジンクラック、ペレット
クラック、　ＰＳＧクラックおよびアルミニウム配線ず
れの発生を防止でき、かつペレットタッチやワイヤオー
プンが生じにくい。特に大型の半導体ペレットにおいて
有効である。またフィルム状コーテイング材を一定程度
厚くすれば、α線によるソフトエラーを防止できる。As described above, according to the present invention, resin cracks, pellet cracks, PSG cracks, and aluminum wiring misalignment can be prevented from occurring, and pellet touching and wire opens are less likely to occur. This is particularly effective for large semiconductor pellets. Furthermore, if the film-like coating material is made thicker to a certain extent, soft errors caused by alpha rays can be prevented.

【図面の簡単な説明】[Brief explanation of drawings]

第１図、第２図はそれぞれ本発明の一実施例による半導
体装置の平面図および断面図、第３図、第４図はそれぞ
れ同装置におけるフィルム状コーティング剤の平面図で
ある。 １・・・半導体ペレット、２・・・ベッド、３・・・イ
ンナーリード、４・・・マウント用ペースト、５・・・
フィルム状コーディング材、６・・・ポンディングワイ
ヤ、７・・・昶ンデイングノぞツＰ。 出願人代理人　緒　股　清 （７） わ　２　図1 and 2 are a plan view and a sectional view, respectively, of a semiconductor device according to an embodiment of the present invention, and FIGS. 3 and 4 are plan views, respectively, of a film-like coating agent in the same device. 1... Semiconductor pellet, 2... Bed, 3... Inner lead, 4... Mounting paste, 5...
Film-like coding material, 6... Ponding wire, 7... Changing Nozotsu P. Applicant's agent Kiyoshi Omata (7) 2 Figure

Claims (1)

【特許請求の範囲】[Claims] 半導体ペレットを樹脂封止して形成する樹脂封止型の半
導体装置において、前記半導体ペレット表面に、フィル
ム状保護コーテイング材を、その一部が前記半導体ペレ
ット外周より外側に張り出すようにして接着したことを
特徴とする半導体装置。In a resin-sealed semiconductor device formed by resin-sealing a semiconductor pellet, a film-like protective coating material is adhered to the surface of the semiconductor pellet in such a manner that a part of it extends beyond the outer periphery of the semiconductor pellet. A semiconductor device characterized by:
JP58149818A 1983-08-17 1983-08-17 Semiconductor device Pending JPS6041245A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58149818A JPS6041245A (en) 1983-08-17 1983-08-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58149818A JPS6041245A (en) 1983-08-17 1983-08-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6041245A true JPS6041245A (en) 1985-03-04

Family

ID=15483369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58149818A Pending JPS6041245A (en) 1983-08-17 1983-08-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6041245A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013147589A (en) * 2012-01-20 2013-08-01 Nitto Denko Corp Resin composition sheet for encapsulating electronic part and method of producing electronic part apparatus using the sheet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013147589A (en) * 2012-01-20 2013-08-01 Nitto Denko Corp Resin composition sheet for encapsulating electronic part and method of producing electronic part apparatus using the sheet

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