JPS6035397A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS6035397A
JPS6035397A JP59123430A JP12343084A JPS6035397A JP S6035397 A JPS6035397 A JP S6035397A JP 59123430 A JP59123430 A JP 59123430A JP 12343084 A JP12343084 A JP 12343084A JP S6035397 A JPS6035397 A JP S6035397A
Authority
JP
Japan
Prior art keywords
emitter
transistor
read
transistors
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59123430A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6341160B2 (enExample
Inventor
Hideaki Isogai
磯貝　英明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59123430A priority Critical patent/JPS6035397A/ja
Publication of JPS6035397A publication Critical patent/JPS6035397A/ja
Publication of JPS6341160B2 publication Critical patent/JPS6341160B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP59123430A 1984-06-15 1984-06-15 半導体記憶装置 Granted JPS6035397A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59123430A JPS6035397A (ja) 1984-06-15 1984-06-15 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59123430A JPS6035397A (ja) 1984-06-15 1984-06-15 半導体記憶装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP10739379A Division JPS5630754A (en) 1979-08-23 1979-08-23 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS6035397A true JPS6035397A (ja) 1985-02-23
JPS6341160B2 JPS6341160B2 (enExample) 1988-08-16

Family

ID=14860369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59123430A Granted JPS6035397A (ja) 1984-06-15 1984-06-15 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6035397A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0739054U (ja) * 1994-10-31 1995-07-14 三田工業株式会社 感光体ドラム

Also Published As

Publication number Publication date
JPS6341160B2 (enExample) 1988-08-16

Similar Documents

Publication Publication Date Title
US4322820A (en) Semiconductor integrated circuit device
JPS5827599B2 (ja) シユウセキカイロメモリ
US5289409A (en) Bipolar transistor memory cell and method
US3919566A (en) Sense-write circuit for bipolar integrated circuit ram
US3863229A (en) Scr (or scs) memory array with internal and external load resistors
US3427598A (en) Emitter gated memory cell
US4373195A (en) Semiconductor integrated circuit device
JPS6035397A (ja) 半導体記憶装置
US3784976A (en) Monolithic array error detection system
US3573756A (en) Associative memory circuitry
US4398268A (en) Semiconductor integrated circuit device
JPS6346580B2 (enExample)
GB1480138A (en) Transistor memory array
US3936813A (en) Bipolar memory cell employing inverted transistors and pinched base resistors
JPH02101697A (ja) 半導体メモリ回路
JP2591252B2 (ja) 半導体メモリ装置
JPS6079772A (ja) 半導体記憶装置
JPS6037651B2 (ja) 機能メモリ・セル
JPS6037760Y2 (ja) 半導体記憶装置
JP3303376B2 (ja) 半導体記憶装置
JPS5853086A (ja) 記憶装置
JPS5929450A (ja) プログラマブルモノリシツク集積回路方式
JPH0719472B2 (ja) 半導体記憶装置
JPS61178791A (ja) 半導体記憶装置
JPS60103584A (ja) 半導体記憶回路