JPS6033562A - Manufacture of electrophotographic sensitive body - Google Patents

Manufacture of electrophotographic sensitive body

Info

Publication number
JPS6033562A
JPS6033562A JP14341383A JP14341383A JPS6033562A JP S6033562 A JPS6033562 A JP S6033562A JP 14341383 A JP14341383 A JP 14341383A JP 14341383 A JP14341383 A JP 14341383A JP S6033562 A JPS6033562 A JP S6033562A
Authority
JP
Japan
Prior art keywords
photoconductive layer
substrate
temp
roughened
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14341383A
Other languages
Japanese (ja)
Other versions
JPH0217020B2 (en
Inventor
Akio Arai
新井 明夫
Atsushi Asamura
浅村 淳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP14341383A priority Critical patent/JPS6033562A/en
Publication of JPS6033562A publication Critical patent/JPS6033562A/en
Publication of JPH0217020B2 publication Critical patent/JPH0217020B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

Abstract

PURPOSE:To easily obtain a photosensitive body having a photosensitive layer roughened on the surface by mechanically roughening the surface of the first photoconductive layer formed on a substrate and vapor depositing a photoconductor at a specified substrate temp. CONSTITUTION:A photoconductor, such as Se or its alloy, is vapor-deposited to a conductive substrate 1 made of Al, Fe, Cu, or the like, and the obtained photoconductive layer 2 is worked on the surface by cylinder grinding, liquid honing, or the like to roughen its surface. A photoconductor is vapor-deposited to the layer 2 while the temp. of the substrate 1 is kept at a temp. not above the glass transition point of the photoconductor to form the second photoconductive layer 3 having a desirable roughened surface 4, preferably having a roughness of 0.1-2mum. Said substrate temp. is selected in accordance with the kinds of photoconductors, a temp. below about 180 deg.C is suitable, and preferably 100- 170 deg.C, in the case of using As2Se3.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明は、感光層表面が粗面化された電子写真用感光体
の製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to a method for manufacturing an electrophotographic photoreceptor in which the surface of a photosensitive layer is roughened.

〔従来技術とその問題点〕[Prior art and its problems]

従来電子写真用感光体は、画像形成、信頼性等から感光
体表面は平滑でなければならないとされてきた。例えば
この檀の感光体は、一般にSe合金を用いる感光体が使
用され、これは導電性基体上に真空蒸着法等により無定
形Se合金を付着し、光導電層として用いるものである
が、その表面は光沢を有する平滑面(鏡面)となってい
る。この光導電層の表面が平滑であるとトナーとの密着
性が増大し転写性、クリーニング性、転写紙の分離性が
損われる欠点となっている。また、残留トナー除去のた
め過度のクリーニング装置が必要となり感光体表面を損
傷する等、感光体の寿命を低下させクリーニング不良に
よる画質低下を招く一因となっている。
Conventionally, electrophotographic photoreceptors have been required to have a smooth surface for image formation, reliability, and the like. For example, this Dan photoreceptor generally uses a photoreceptor using an Se alloy, in which an amorphous Se alloy is deposited on a conductive substrate by vacuum evaporation or the like and used as a photoconductive layer. The surface is a glossy smooth surface (mirror surface). If the surface of the photoconductive layer is smooth, the adhesion with the toner increases, resulting in a disadvantage that the transferability, cleaningability, and separation of the transfer paper are impaired. Furthermore, an excessive amount of cleaning equipment is required to remove residual toner, which damages the surface of the photoreceptor, which shortens the life of the photoreceptor and causes deterioration in image quality due to poor cleaning.

最近上記のような欠点に対し、感光体の表面は、ある程
度荒れていた方が有効であることがわかってきた。光導
電層表面に微細な凹凸を付与する粗面化の提案がいくつ
かあるが、いずれも工業的な難しさから実用化されてい
ない。特に光導電層形成過程において、Se系のような
流動性の光導電材料からなる光導電層表面を適度に荒ら
すことは、従来の蒸着方法では困難である。光導電層形
成過程あるいは形成後に異物付着、異物接触による粗面
化は表面結晶化が起こり信頼性を損うとされてきたが、
AszSe、、感光体に於いては、ガラス転移点が高く
、異物接触に対して抵抗力があるので光導電層表面を、
例えば円筒研削、超仕上げ加工等により直接表面加工し
て粗面化することができる。
Recently, it has been found that it is more effective for the surface of the photoreceptor to be roughened to some extent in order to overcome the above-mentioned drawbacks. Although there are several proposals for roughening the surface of the photoconductive layer by adding fine irregularities to the surface, none of them have been put to practical use due to industrial difficulties. Particularly in the process of forming a photoconductive layer, it is difficult to appropriately roughen the surface of the photoconductive layer made of a fluid photoconductive material such as Se-based by conventional vapor deposition methods. It has been believed that surface roughening due to adhesion of foreign matter or contact with foreign matter during or after formation of the photoconductive layer causes surface crystallization and impairs reliability.
AszSe has a high glass transition point and is resistant to contact with foreign matter, so the surface of the photoconductive layer is
For example, the surface can be roughened by direct surface processing by cylindrical grinding, superfinishing, etc.

但し、光導電層表面を直接加工する方法は、表面構造に
変化が起こり電荷の保持率が悪く電荷がのらなくなるな
ど、静電特性上好ましくない。また、導電性基体の表面
を円筒研削、液体ホーニング等により粗面とし、光導電
ノー形成過程の条件を、例えばSe系感光体において蒸
着時の基体温度をガラス転移点以下にするなどのように
適当に設定することにより、光導電層表面を粗面化する
方法がある。この方法は、静電特性上は問題ないが基体
の表面に安定り、た粗面が得られないので、この方法で
も光導電層表面に安定(7た粗面を形成することが難し
い。
However, the method of directly processing the surface of the photoconductive layer is unfavorable in terms of electrostatic properties, such as changes in the surface structure resulting in poor charge retention and no charge being carried. In addition, the surface of the conductive substrate is roughened by cylindrical grinding, liquid honing, etc., and the conditions for the photoconductive formation process are adjusted, for example, by setting the substrate temperature at the time of vapor deposition to below the glass transition point in Se-based photoreceptors. There is a method of roughening the surface of the photoconductive layer by making appropriate settings. Although this method does not have any problems in terms of electrostatic properties, it does not provide a stable, rough surface on the surface of the substrate, so it is difficult to form a stable, rough surface on the surface of the photoconductive layer even with this method.

〔発明の目的〕[Purpose of the invention]

本発明はこれに対17、トナーの転写性、転写紙の分離
性、クリーニング性の向上のために光導電層表面が粗面
化された感光体を、静電特性を害することなく安定1〜
て形成できる電子写真用感光体の製造方法を提供するこ
とを目的とする。
In response to this problem, the present invention provides a photoreceptor with a roughened surface of the photoconductive layer to improve toner transfer performance, transfer paper separation performance, and cleaning performance.
An object of the present invention is to provide a method for manufacturing an electrophotographic photoreceptor that can be formed using the following methods.

〔発明の要点〕[Key points of the invention]

本発明は導電性基体表面にセレン系材料からなる第1の
光導電層を蒸着する工程とこの工程により形成された第
1の光導電層の表面を粗面化する工程と、粗面化された
第1の光導電層の表面に同様にセレン系材料からなる第
2の光導電層を蒸着する工程とにより感光体1!造する
ものである。
The present invention comprises a step of vapor depositing a first photoconductive layer made of a selenium-based material on the surface of a conductive substrate, a step of roughening the surface of the first photoconductive layer formed by this step, and a step of roughening the surface of the first photoconductive layer formed by this step. A second photoconductive layer made of a selenium-based material is similarly deposited on the surface of the first photoconductive layer. It is something that is created.

一般にSe又はSti台金はカラス転移点(Tg)近傍
で粘性が急変し流動性が変動する。即ち′rg近傍もし
くはそれより上の温度では流動性が増大し、1より下で
は流動性が低減する。無定形8e又はSe合金による光
導電層の形成は、真空蒸着法により行なわれるが、蒸着
時に設定される基体温度により基体上での上記の8eま
たはSe合金の流動性を変えることができる。
Generally, the viscosity of Se or Sti base metals changes suddenly near the glass transition point (Tg), and the fluidity fluctuates. That is, at temperatures near or above 'rg, the fluidity increases, and at temperatures below 1, the fluidity decreases. The photoconductive layer made of amorphous 8e or Se alloy is formed by a vacuum deposition method, and the fluidity of the 8e or Se alloy on the substrate can be changed by changing the substrate temperature set at the time of vapor deposition.

本発明は、上述の性質を利用し一層目の光導電層を従来
通りの方法で蒸着により形成し、この一層目の光導電層
の表面を粗面化12、この粗度が層表面に出るよう二層
目の光導電層をTg以下の温度で蒸着により形成するの
である。
The present invention utilizes the above-mentioned properties to form a first photoconductive layer by vapor deposition using a conventional method, and roughens the surface of this first photoconductive layer 12, so that this roughness appears on the layer surface. Thus, the second photoconductive layer is formed by vapor deposition at a temperature below Tg.

〔発明の実施例〕[Embodiments of the invention]

第1図は本発明の実施例の感光体の断面を示す。 FIG. 1 shows a cross section of a photoreceptor according to an embodiment of the present invention.

1はA4.Fe、Cu等の金属または合金からなる導電
性基体であり、その表面は円筒研削、液体ホーニング等
で表面加工するが限定した粗度にする必要はない。この
基体1上にセレン又はセレン合金からなる第一の光導電
層2を蒸着し、その表面を円筒研削、液体ホーニング等
で表面加工し粗面化する。さらにその上にAs、Ses
からなる第二の光 5− 導電層3をAs2Se3 のガラス転移点以下の温度で
蒸着することによりその表面に粗面4を形成する。
1 is A4. It is a conductive substrate made of metal or alloy such as Fe, Cu, etc., and its surface is processed by cylindrical grinding, liquid honing, etc., but it is not necessary to have a limited roughness. A first photoconductive layer 2 made of selenium or a selenium alloy is deposited on this substrate 1, and its surface is roughened by surface processing such as cylindrical grinding or liquid honing. Furthermore, As, Ses
A rough surface 4 is formed on the surface of the second photoconductive layer 3 by depositing it at a temperature below the glass transition point of As2Se3.

実施例1: 導電性基体10表面を円筒研削により加工1〜、基体1
の温度を230℃に保って、60μmの厚さにAs、S
e3 を蒸着する。このようにして得られた感光体の第
1の光導電層2の表面を超仕上げ加工により粗面化する
。導電層2の表面は−II−2000の砥石にて0.1
〜0.5μmの粗さにされた。このままでは、静電特性
上、従来品と比較して電荷の保持率が50%以下であり
電荷をのせられないので実用上好ましくない。さらに同
じ蒸発源を用い、基体1の温度を150℃に保って、1
〜5μmの厚さに蒸着し、第2の光導電層3を形成した
ところその表面に粗さ0.1〜0.4μmの粗面を得る
ことができた。
Example 1: Processing the surface of the conductive substrate 10 by cylindrical grinding 1 to 1, Substrate 1
As and S were deposited to a thickness of 60 μm while maintaining the temperature at 230°C.
Deposit e3. The surface of the first photoconductive layer 2 of the photoreceptor thus obtained is roughened by superfinishing. The surface of the conductive layer 2 was polished to 0.1 with a -II-2000 grindstone.
A roughness of ˜0.5 μm was provided. If left as is, the charge retention rate will be 50% or less compared to conventional products due to electrostatic properties, and no charge can be loaded, which is not practical for practical purposes. Furthermore, using the same evaporation source and keeping the temperature of the substrate 1 at 150°C,
When the second photoconductive layer 3 was formed by vapor deposition to a thickness of ~5 μm, a rough surface with a roughness of 0.1 to 0.4 μm could be obtained on the surface.

実施例2: 導電性基体1の表面を円筒研削によシ加工し基体1の温
度を150℃に保って、AsgSes 層1を厚さ60
μmに蒸着(7、得られた光導電層表面を超−〇 − 仕上げ加工により粗面加工した。光導電層1の表面は4
P2000の砥石により0.1〜0.5μmの粗さにし
て、さらにAs2Se3 を基体1の温度を150℃に
保って1〜5μm蒸着したところ、その表面が0.1〜
0.4μmの粗さに粗された第2の光導電層3を得るこ
とができた。
Example 2: The surface of the conductive substrate 1 was processed by cylindrical grinding, the temperature of the substrate 1 was maintained at 150° C., and the AsgSes layer 1 was formed to a thickness of 60° C.
The surface of the photoconductive layer 1 was roughened by super-〇-finishing.The surface of the photoconductive layer 1 was
The roughness was made 0.1-0.5 μm using a P2000 grindstone, and As2Se3 was deposited to a thickness of 1-5 μm while keeping the temperature of the substrate 1 at 150°C.
A second photoconductive layer 3 roughened to a roughness of 0.4 μm could be obtained.

実施例1,2によって得られた感光体の静電特性は従来
品と同等で画像品質が良く、画像上白すしとなる欠陥も
発生しなかった。そして表面が粗面化された感光層が得
られたのでトナーの転写性、転写紙の分離性、クリーニ
ング性が良好になった。
The electrostatic properties of the photoreceptors obtained in Examples 1 and 2 were the same as those of conventional products, the image quality was good, and no defects such as white spots on the images occurred. Since a photosensitive layer with a roughened surface was obtained, toner transfer properties, transfer paper separation properties, and cleaning properties were improved.

一層目を粗面化する方法は、砥石による超仕上げ加工(
8F)によるほかに砥石を回転させながらドラムを廻し
て研摩する方法、砥石の代わりにエメリーペーパー、研
摩布等を使用する方法等によってもよい。又、画像上に
加工痕が出にくい梨地仕上げを得ることのできる液体ホ
ーニングも有効である。
The method of roughening the first layer is by super-finishing with a grindstone (
8F), a method of polishing by rotating a drum while rotating a whetstone, a method of using emery paper, abrasive cloth, etc. in place of the whetstone, etc. may also be used. Liquid honing is also effective because it can provide a matte finish that does not easily leave processing marks on the image.

感光層(第2導電導層)の表面に表われる凹凸は、粗さ
0.1〜2μmの範囲が使用され、特に0.1〜1μm
の範囲にするのが望ましく、また表面方向にはその凹凸
の幅が使用トナーの粒径より小さいことが有効である。
The unevenness appearing on the surface of the photosensitive layer (second conductive layer) has a roughness in the range of 0.1 to 2 μm, particularly 0.1 to 1 μm.
The width of the unevenness in the surface direction is preferably smaller than the particle size of the toner used.

これよシ凹凸が大きい場合は、スポット状の帯電ムラが
生じ画像上の欠陥となる。まタフリーニング用のブレー
ドに傷が入り、ブレードの寿命を短かくする。凹凸が小
さい場合は、所望のクリーニング性が得られなくなる。
If the unevenness is larger than this, spot-like charging unevenness will occur, resulting in a defect on the image. The blade for mata cleaning gets scratched, shortening its lifespan. If the unevenness is small, desired cleaning performance cannot be obtained.

第2の光導電層形成過程に於いて基体の温度は、前述し
たように感光層の表面を大きく左右するので適切な範囲
に設定する必要がある。感光層の表面粗面化を可能とす
る基体の温度はAs2Se3 を光導電材として用いる
場合は通常180℃以下であり、特に100〜170℃
が適当である。また、第2の光導電層の蒸着厚は、これ
をあまり太く選ぶと、その表面が平滑化され、小さく選
ぶと粗面の粗さが大きくなるので、粗さが上記の範囲と
なるように調節する必要がある。□ 〔発明の効果〕 本発明は導電性基体」二に形成した第一の光導電層の表
面を機械的に加工して粗面化し、この粗面化した光導電
層の上に基体温度を蒸着する光導電材のガラス転移点以
下にして第2の光導電層を蒸着により形成して表面に粗
面を有する電子写真用感光体を得るもので、これにより
トナーの転写性、転写紙の分離性、クリーニング性の良
好でかつ画像品質の良好が電子写真用感光体を安定して
製造することが可能となったので得られる効果は極めて
太きい。
In the process of forming the second photoconductive layer, the temperature of the substrate greatly influences the surface of the photosensitive layer, as described above, and therefore needs to be set within an appropriate range. The temperature of the substrate that makes it possible to roughen the surface of the photosensitive layer is usually 180°C or less when As2Se3 is used as a photoconductive material, particularly 100 to 170°C.
is appropriate. In addition, if the vapor deposition thickness of the second photoconductive layer is selected to be too thick, the surface will be smoothed, and if it is selected to be small, the roughness of the surface will become large. need to be adjusted. □ [Effects of the Invention] The present invention is characterized by roughening the surface of the first photoconductive layer formed on the conductive substrate by mechanically processing the surface, and then increasing the temperature of the substrate onto the roughened photoconductive layer. A second photoconductive layer is formed by vapor deposition at a temperature below the glass transition point of the photoconductive material to be vapor-deposited to obtain an electrophotographic photoreceptor having a rough surface, which improves the transferability of toner and the separation of transfer paper. Since it has become possible to stably manufacture an electrophotographic photoreceptor with good cleaning properties and good image quality, the effect obtained is extremely significant.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例による電子写真用感光体の部
分断面図である。 1・・・導電性基体、2・・・第一光導電層、3・・・
As29− 第1図 ム
FIG. 1 is a partial sectional view of an electrophotographic photoreceptor according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Conductive substrate, 2... First photoconductive layer, 3...
As29- Figure 1

Claims (1)

【特許請求の範囲】 1)導電性基体表面にSe系の光導電材よりなる第1の
光導電層を蒸着する工程とこの工程で形成された第1の
光導電層の表面を粗面化する工程と粗面化された第1の
光導電層の表面に同様にSe系光導電材よりなる第2の
光導電層を蒸着する工程とを含むことを特徴とする電子
写真用感光体の製造方法 2、特許請求の範囲第1項記載の方法において光導電材
がセレン・ヒ素各へりなる電子写真用感光体の製造方法 3)特許請求の範囲第1項または第2項記載の方法にお
いて、第2の光導電層を蒸着する工程が光導電材のガラ
ス転移点より低い温度で行なうようにした電子写真用感
光体の製造方法。 4)特許請求の範囲第1項記載の方法において第1の光
導電層の表面が0.1〜2μmの粗さに粗面化されるよ
うにした電子写真用感光体の製造方法。
[Claims] 1) A step of vapor depositing a first photoconductive layer made of a Se-based photoconductive material on the surface of a conductive substrate, and roughening the surface of the first photoconductive layer formed in this step. and a step of depositing a second photoconductive layer made of a Se-based photoconductive material on the roughened surface of the first photoconductive layer. 2. A method for manufacturing an electrophotographic photoreceptor in which the photoconductive material is selenium and arsenic in the method described in claim 1. 3) In the method described in claim 1 or 2, A method for producing an electrophotographic photoreceptor, wherein the step of depositing a photoconductive layer is performed at a temperature lower than the glass transition point of the photoconductive material. 4) A method for manufacturing an electrophotographic photoreceptor, in which the surface of the first photoconductive layer is roughened to a roughness of 0.1 to 2 μm in the method according to claim 1.
JP14341383A 1983-08-05 1983-08-05 Manufacture of electrophotographic sensitive body Granted JPS6033562A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14341383A JPS6033562A (en) 1983-08-05 1983-08-05 Manufacture of electrophotographic sensitive body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14341383A JPS6033562A (en) 1983-08-05 1983-08-05 Manufacture of electrophotographic sensitive body

Publications (2)

Publication Number Publication Date
JPS6033562A true JPS6033562A (en) 1985-02-20
JPH0217020B2 JPH0217020B2 (en) 1990-04-19

Family

ID=15338187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14341383A Granted JPS6033562A (en) 1983-08-05 1983-08-05 Manufacture of electrophotographic sensitive body

Country Status (1)

Country Link
JP (1) JPS6033562A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61238060A (en) * 1985-04-16 1986-10-23 Canon Inc Electrophotographic sensitive body and image formation by using it
EP0200468A2 (en) * 1985-04-30 1986-11-05 Mita Industrial Co. Ltd. Photoreceptor drum for electrophotography
JPS6223049A (en) * 1985-07-24 1987-01-31 Fuji Electric Co Ltd Electrophotographic sensitive body
MD341Z (en) * 2010-07-30 2011-09-30 Институт Прикладной Физики Академии Наук Молдовы Method for manufacturing relief holographic diffraction gratings

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61238060A (en) * 1985-04-16 1986-10-23 Canon Inc Electrophotographic sensitive body and image formation by using it
JPH0547101B2 (en) * 1985-04-16 1993-07-15 Canon Kk
EP0200468A2 (en) * 1985-04-30 1986-11-05 Mita Industrial Co. Ltd. Photoreceptor drum for electrophotography
JPS6223049A (en) * 1985-07-24 1987-01-31 Fuji Electric Co Ltd Electrophotographic sensitive body
MD341Z (en) * 2010-07-30 2011-09-30 Институт Прикладной Физики Академии Наук Молдовы Method for manufacturing relief holographic diffraction gratings

Also Published As

Publication number Publication date
JPH0217020B2 (en) 1990-04-19

Similar Documents

Publication Publication Date Title
JPH0462070B2 (en)
US4134763A (en) Selenium-base photosensitive materials for electrophotography having super-finished substrate
JPS6033562A (en) Manufacture of electrophotographic sensitive body
US4537849A (en) Photosensitive element having roughened selenium-arsenic alloy surface
JPS5835544A (en) Electrophotographic receptor
JPS58174956A (en) Manufacture of electrophotographic receptor
US4091145A (en) Support for electrophotographic sensitive plate
JP2943443B2 (en) Electrophotographic photoreceptor and method of manufacturing the same
JPS61251859A (en) Electrophotographic sensitive drum
US4932165A (en) Method of polishing the surface of electrophotographic photoreceptor
JPS6146968A (en) Reproducing method of electrophotographic sensitive body
JP2679361B2 (en) Surface roughening method for photosensitive layer of electrophotographic photoreceptor
JPS5811944A (en) Production of photosensitive element for electrophotography
JPS59135473A (en) Electrophotographic sensitive body
JPH02220065A (en) Electrophotographic sensitive body
JP3215829B2 (en) Method of manufacturing aluminum substrate for photosensitive drum
JPS63157166A (en) Manufacture of electrophotographic sensitive body
JPH02103554A (en) Method for regenerating electrophotographic sensitive body
JPS5994761A (en) Manufacture of electrophotographic photosensitive body
JP4447968B2 (en) Method for producing electrophotographic photosensitive member
JPS5968751A (en) Manufacture of electrophotographic amorphous silicon receptor
JPH071397B2 (en) Surface processing method for electrophotographic photoreceptor substrate
JP3136210B2 (en) Photosensitive drum manufacturing method
JPS5893058A (en) Photoreceptor for electrophotography
JPS585750A (en) Electrophotographic photoreceptor