JPS6033293A - 単結晶半導体引上装置 - Google Patents
単結晶半導体引上装置Info
- Publication number
- JPS6033293A JPS6033293A JP13925483A JP13925483A JPS6033293A JP S6033293 A JPS6033293 A JP S6033293A JP 13925483 A JP13925483 A JP 13925483A JP 13925483 A JP13925483 A JP 13925483A JP S6033293 A JPS6033293 A JP S6033293A
- Authority
- JP
- Japan
- Prior art keywords
- convection
- single crystal
- magnetic field
- distribution
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 23
- 239000001301 oxygen Substances 0.000 abstract description 23
- 229910052760 oxygen Inorganic materials 0.000 abstract description 23
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 22
- 238000009826 distribution Methods 0.000 abstract description 19
- 229910052710 silicon Inorganic materials 0.000 abstract description 18
- 239000010703 silicon Substances 0.000 abstract description 18
- 239000012535 impurity Substances 0.000 abstract description 4
- -1 specific resistance Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 230000000704 physical effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000001012 protector Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010571 fourier transform-infrared absorption spectrum Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13925483A JPS6033293A (ja) | 1983-07-29 | 1983-07-29 | 単結晶半導体引上装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13925483A JPS6033293A (ja) | 1983-07-29 | 1983-07-29 | 単結晶半導体引上装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6033293A true JPS6033293A (ja) | 1985-02-20 |
| JPH0157079B2 JPH0157079B2 (enrdf_load_stackoverflow) | 1989-12-04 |
Family
ID=15241020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13925483A Granted JPS6033293A (ja) | 1983-07-29 | 1983-07-29 | 単結晶半導体引上装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6033293A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5647904A (en) * | 1987-09-21 | 1997-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing superconducting ceramics in a magnetic field |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58217493A (ja) * | 1982-06-11 | 1983-12-17 | Nippon Telegr & Teleph Corp <Ntt> | 単結晶の引上方法 |
-
1983
- 1983-07-29 JP JP13925483A patent/JPS6033293A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58217493A (ja) * | 1982-06-11 | 1983-12-17 | Nippon Telegr & Teleph Corp <Ntt> | 単結晶の引上方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5647904A (en) * | 1987-09-21 | 1997-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing superconducting ceramics in a magnetic field |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0157079B2 (enrdf_load_stackoverflow) | 1989-12-04 |
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