JPS6029463A - 窒化ニオブ膜の形成方法 - Google Patents
窒化ニオブ膜の形成方法Info
- Publication number
- JPS6029463A JPS6029463A JP13728683A JP13728683A JPS6029463A JP S6029463 A JPS6029463 A JP S6029463A JP 13728683 A JP13728683 A JP 13728683A JP 13728683 A JP13728683 A JP 13728683A JP S6029463 A JPS6029463 A JP S6029463A
- Authority
- JP
- Japan
- Prior art keywords
- film
- nbn
- substrate
- sputtering
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 claims abstract description 29
- 239000002245 particle Substances 0.000 claims abstract description 24
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims description 44
- 238000000151 deposition Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 abstract description 58
- 238000010884 ion-beam technique Methods 0.000 abstract description 16
- 239000003779 heat-resistant material Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 78
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 61
- 229910052757 nitrogen Inorganic materials 0.000 description 29
- 230000007423 decrease Effects 0.000 description 28
- 150000002500 ions Chemical class 0.000 description 21
- 239000007789 gas Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 16
- 230000008021 deposition Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000001133 acceleration Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 4
- 230000005593 dissociations Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 235000002639 sodium chloride Nutrition 0.000 description 3
- 239000011780 sodium chloride Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 241000254032 Acrididae Species 0.000 description 1
- -1 NbN ions Chemical class 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 239000002552 dosage form Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910001337 iron nitride Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13728683A JPS6029463A (ja) | 1983-07-26 | 1983-07-26 | 窒化ニオブ膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13728683A JPS6029463A (ja) | 1983-07-26 | 1983-07-26 | 窒化ニオブ膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6029463A true JPS6029463A (ja) | 1985-02-14 |
| JPS6339665B2 JPS6339665B2 (en:Method) | 1988-08-05 |
Family
ID=15195130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13728683A Granted JPS6029463A (ja) | 1983-07-26 | 1983-07-26 | 窒化ニオブ膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6029463A (en:Method) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6483659A (en) * | 1987-09-24 | 1989-03-29 | Semiconductor Energy Lab | Sputtering device for producing oxide superconductive material |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102857533B1 (ko) * | 2023-03-24 | 2025-09-10 | 옵티시스 주식회사 | 다수의 발광 소자를 포함하는 발광 유닛 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5485214A (en) * | 1977-12-21 | 1979-07-06 | Suwa Seikosha Kk | Armor for personal watch |
| JPS5867865A (ja) * | 1981-09-23 | 1983-04-22 | オボニック・シンセティック・マティリアルズ・カンパニ−・インコ−ポレ−テッド | コ−テイング組成物及び方法 |
-
1983
- 1983-07-26 JP JP13728683A patent/JPS6029463A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5485214A (en) * | 1977-12-21 | 1979-07-06 | Suwa Seikosha Kk | Armor for personal watch |
| JPS5867865A (ja) * | 1981-09-23 | 1983-04-22 | オボニック・シンセティック・マティリアルズ・カンパニ−・インコ−ポレ−テッド | コ−テイング組成物及び方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6483659A (en) * | 1987-09-24 | 1989-03-29 | Semiconductor Energy Lab | Sputtering device for producing oxide superconductive material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6339665B2 (en:Method) | 1988-08-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0309294A2 (en) | Method and apparatus for the manufacture of superconducting oxide materials | |
| EP0284489B2 (en) | Process for depositing a superconducting thin film | |
| Sawatzky et al. | Cation deficiencies in rf sputtered gadolinium iron garnet films | |
| JPS6029463A (ja) | 窒化ニオブ膜の形成方法 | |
| JP2905342B2 (ja) | ＹＢａ２Ｃｕ３Ｏｘ超電導薄膜の製造方法 | |
| Drozdov et al. | Peculiarities in magnetron sputtering of YBCO epitaxial films for applications in superconductor electronics devices | |
| Aufderheide | Sputtered thin film coatings | |
| Sai et al. | Thin Film Fabrication Techniques | |
| Lecoeur et al. | Influence of angular distribution on the deposition rate of species sputtered from a multicomponent target in different configurations: Applications to mixed valence copper oxides | |
| JP2975649B2 (ja) | スパッタリング装置 | |
| JPH0715051A (ja) | Ｙｂｃｏ超電導薄膜の製造方法 | |
| Krupke et al. | Superconducting, structural and surface properties of GdBaCuO thin films deposited by electron cyclotron resonance supported sputtering | |
| JP2009108420A (ja) | 低抵抗ｉｔｏ薄膜及びその製造方法 | |
| JP2639544B2 (ja) | 三層ペロブスカイト構造をもつＬａＡ▲下２▼Ｃｕ▲下３▼Ｏ▲下７▼▲下−▼ｘの単結晶薄膜及びＬａＡ▲下２▼Ｃｕ▲下３▼Ｏ▲下７▼▲下−▼ｘ薄膜の製造法 | |
| Szyszka | Magnetron sputtering of ZnO films | |
| Francombe | 2.5 Growth of Epitaxial Films by Sputtering | |
| JP2529347B2 (ja) | 超電導薄膜の作製方法 | |
| JP2567446B2 (ja) | 超電導薄膜の作製方法 | |
| JP2639510B2 (ja) | 超電導薄膜の作製方法 | |
| JPH01212752A (ja) | 超電導薄膜作製装置 | |
| JPH0764678B2 (ja) | 超電導薄膜の作製方法 | |
| Shi et al. | Preparation of YBaCuO films by DC magnetron sputtering | |
| JP2501616B2 (ja) | 超電導薄膜の作製方法 | |
| JP2525852B2 (ja) | 超電導薄膜の作製方法 | |
| JP2501614B2 (ja) | 超電導薄膜の作製方法 |