JPS60260165A - Thin film solar battery and manufacture thereof - Google Patents
Thin film solar battery and manufacture thereofInfo
- Publication number
- JPS60260165A JPS60260165A JP59115938A JP11593884A JPS60260165A JP S60260165 A JPS60260165 A JP S60260165A JP 59115938 A JP59115938 A JP 59115938A JP 11593884 A JP11593884 A JP 11593884A JP S60260165 A JPS60260165 A JP S60260165A
- Authority
- JP
- Japan
- Prior art keywords
- film
- amorphous silicon
- aluminum plate
- chromate
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 23
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 15
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims abstract description 7
- 239000010452 phosphate Substances 0.000 claims abstract description 7
- 239000007864 aqueous solution Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 4
- 238000005507 spraying Methods 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 2
- WMYWOWFOOVUPFY-UHFFFAOYSA-L dihydroxy(dioxo)chromium;phosphoric acid Chemical compound OP(O)(O)=O.O[Cr](O)(=O)=O WMYWOWFOOVUPFY-UHFFFAOYSA-L 0.000 abstract description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 abstract description 2
- 229910000151 chromium(III) phosphate Inorganic materials 0.000 abstract description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 abstract description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 abstract 2
- 238000007598 dipping method Methods 0.000 abstract 1
- 235000013024 sodium fluoride Nutrition 0.000 abstract 1
- 239000011775 sodium fluoride Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000004804 winding Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 17
- 229920006015 heat resistant resin Polymers 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 235000011007 phosphoric acid Nutrition 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- -1 chromium Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、非晶質シリコンを主成分とする薄膜太陽電池
およびその製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thin film solar cell mainly composed of amorphous silicon and a method for manufacturing the same.
従来例の構成とその問題点
近年、非晶質シリコン太陽電池は、電卓、電子ゲーム等
の電子機器の内蔵電源として広（用いられている。一般
に、非晶質シリコン太陽電池１素子の起電力は、屋内螢
光灯のもとで０．５０−０．９０ボルトであり、上記電
子機器を駆動するにあた９、複数個の非晶質シリコン太
陽電池を直列接続する必要がある。そのためには、ガラ
ス、セラミック、耐熱性樹脂等の絶縁性基板上に非晶質
シリコン太陽電池が形成されなければならない。Conventional configurations and their problems In recent years, amorphous silicon solar cells have been widely used as built-in power sources in electronic devices such as calculators and electronic games.In general, the electromotive force of one amorphous silicon solar cell element is is 0.50-0.90 volts under indoor fluorescent lights, and in order to drive the above electronic equipment, it is necessary to connect multiple amorphous silicon solar cells in series. For this purpose, amorphous silicon solar cells must be formed on an insulating substrate such as glass, ceramic, or heat-resistant resin.
機器の薄型化に伴い、非晶質シリコン太陽電池の薄型化
もまた要求されるようになった。直列接続された非晶質
シリコン太陽電池は１１ｎｍ程度のガラス等の絶縁性基
板と０．１μｍ−０，５μｍの金属電極層と０．５μｍ
〜１μｍの非晶質シリコン層、および０．０６μｍ−０
，２μｍの透明電極層とからなり、その厚さは絶縁性基
板の厚さによって決定される。As devices become thinner, amorphous silicon solar cells are also required to be thinner. Amorphous silicon solar cells connected in series consist of an insulating substrate such as glass of about 11 nm, a metal electrode layer of 0.1 μm to 0.5 μm, and a metal electrode layer of 0.5 μm.
~1 μm amorphous silicon layer, and 0.06 μm−0
, 2 μm transparent electrode layer, the thickness of which is determined by the thickness of the insulating substrate.
そこで従来のガラス基板に代わり、薄型絶縁性基板とし
てステンレス等の金属薄板表面にポ、リイミド等の耐熱
性樹脂を塗布した基板や、耐熱性樹脂フィルム基板が用
いられるようになった。しかし、これらの耐熱性樹脂は
高価なだけでなく、非晶質シリコン堆積時の高温、低圧
のもとでガスを発生し、太陽電池特性の低下、あるいは
歩留りの低下をまねいていた。また、金属下部電極と耐
熱性樹脂との熱膨張係数、湿度膨張係数の違いにより経
時的なハガレ、クラックが発生するなどの諸々の問題点
があったため、ガスの発生が極めて少なく、金属下部電
極との密着性の良い非晶質シリコン太陽電池用基板が要
求されるようになった。Therefore, instead of conventional glass substrates, thin insulating substrates such as thin metal plates such as stainless steel plates coated with heat-resistant resins such as polyimide, or heat-resistant resin film substrates have come to be used. However, these heat-resistant resins are not only expensive, but also generate gas at high temperatures and low pressures during amorphous silicon deposition, leading to deterioration of solar cell characteristics and yield. In addition, there were various problems such as peeling and cracking over time due to the difference in thermal expansion coefficient and humidity expansion coefficient between the metal lower electrode and the heat-resistant resin. There is now a demand for amorphous silicon solar cell substrates that have good adhesion to the substrate.
発明の目的
本発明は上記の欠点に鑑み、アルミニウムの薄板表面を
化学処理して低コストの絶縁性基板を得、薄型、軽量で
、割れない高信頼性の薄膜太陽電池を提供することを目
的として〜・る。Purpose of the Invention In view of the above drawbacks, the purpose of the present invention is to chemically treat the surface of an aluminum thin plate to obtain a low-cost insulating substrate, and to provide a thin-film solar cell that is thin, lightweight, and unbreakable and highly reliable. As ~・ru.
発明の構成
上記の目的を達成するために、本発明の薄膜太陽電池は
、アルミニウム薄板の少なくとも一方の表面をリン酸塩
、クロム酸塩を含む溶液中に浸漬するか、または前記塩
の水溶液をスプレー塗布して表面をリン酸塩、クロム酸
塩の絶縁物で覆い絶縁化した後、金属下部電極層、非晶
質シリコン層、透明電極層を順次形成して構成されてい
る。Structure of the Invention In order to achieve the above object, the thin film solar cell of the present invention is provided by immersing at least one surface of an aluminum thin plate in a solution containing a phosphate or a chromate, or by soaking an aqueous solution of the salt. After the surface is insulated by coating with a phosphate or chromate insulator by spray coating, a metal lower electrode layer, an amorphous silicon layer, and a transparent electrode layer are sequentially formed.
実施例の説明
以下、本発明の一実施例について図面を参照しながら説
明する。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
図は本発明によって得られたリン酸塩、クロム酸塩皮膜
によって絶縁化されたアルミニウム基板を用℃・た非晶
質シリコン太陽電池の一実施例である。The figure shows an example of an amorphous silicon solar cell using an aluminum substrate insulated by a phosphate or chromate film obtained according to the present invention.
図中、１はアルミニウム板であり、２はその片面に形成
されたリン酸−クロム酸塩皮膜である。In the figure, 1 is an aluminum plate, and 2 is a phosphoric acid-chromate film formed on one side thereof.
このリン酸−クロム酸塩皮膜を形成するには、アルミニ
ウム板１をリン酸２〜１０ｗｔ％、クロム酸０．６〜２
ｗｔ％、７７化ナトリウム０．２〜０．６ ｗｔ％の
水溶液（２０°Ｃ）中に５分間以上浸漬して得ることが
できる。また、上記溶液をスプレーで塗布することも可
能である。このようにして得られる皮膜は厚さ２．５〜
１０μｍ程度のもので緑色を呈している。この反応は
Ａｄ＋Ｈ，ＰＯ４→ＡｌＰＯ４＋ ３ＨＣｒｙ３−１−
Ｈ３ＰＯ４＋ ３Ｈ−） ＣｒＰＯ４−４−３Ｈ２０
Ａ７ ＋〇ｒｙ３＋ ２！Ｈ３ＰＯ４→ＡｌＰＯ４＋Ｃ
ｒＰＯ４＋３Ｈ，，０の反応によってＡ７ＰＯ４−１−
ＣｒＰＯ４の皮膜が生じるものと考えられ、この皮膜に
よってアルミニウム板１表面の絶縁化が実現される。３
は複数個に分割されて絶縁皮膜上に設けられた金属下部
電極であす、クロム、ニクロム、ステンレス鋼、ニッケ
ル、チタンの金属が適している。４はｐ、ｉ、ｎ層より
なる非晶質シリコン層である。５は非晶質シリコン層上
に前記金属下部電極との間を直列接続するよう設けた透
明電極層であり、ＩＴＯ１Ｓ１０２より構成される。To form this phosphoric acid-chromate film, the aluminum plate 1 is mixed with 2 to 10 wt% phosphoric acid and 0.6 to 2 wt% chromic acid.
It can be obtained by immersing it in an aqueous solution (20°C) of 0.2 to 0.6 wt% sodium 77ide for 5 minutes or more. It is also possible to apply the solution by spraying. The film obtained in this way has a thickness of 2.5~
It is about 10 μm and has a green color. This reaction is Ad+H, PO4 → AlPO4+ 3HCry3-1-
H3PO4+ 3H-) CrPO4-4-3H20
A7 +〇ry3+ 2! H3PO4→AlPO4+C
By the reaction of rPO4+3H,,0, A7PO4-1-
It is thought that a film of CrPO4 is formed, and insulation of the surface of the aluminum plate 1 is realized by this film. 3
is a metal lower electrode that is divided into multiple pieces and provided on an insulating film, and metals such as chromium, nichrome, stainless steel, nickel, and titanium are suitable. 4 is an amorphous silicon layer consisting of p, i, and n layers. 5 is a transparent electrode layer provided on the amorphous silicon layer so as to be connected in series with the metal lower electrode, and is made of ITO1S102.
本実施例ではリン酸−クロム酸塩を絶縁皮膜として用い
たが、クロム酸塩皮膜を絶縁皮膜とじて用℃・ることも
可能である。その処理条件はＣｒＯ５０，３５〜０．４
Ｗ ｔ％
Ｎａ、、０ｒ２０７０．３０〜０．３５ｗｔ％ＮａＦ
Ｏ，０８ｗｔ％
の溶液成分とし、これを３０℃に保って３分以上浸漬す
ればよい。このクロム酸塩皮膜の厚さは０．６μｍ程度
であり、非常に薄いため、軽い衝撃によって絶縁皮膜が
破壊されやすく、リン酸−クロム酸塩皮膜の場合より、
非晶質シリコン太陽電池製作時の歩留りは１５〜２０％
低下した。Although phosphoric acid-chromate was used as the insulating film in this example, it is also possible to use the chromate film together with the insulating film. The processing conditions are CrO50,35~0.4
Wt%Na, 0r2070.30~0.35wt%NaF
A solution containing 0.08 wt % O may be maintained at 30° C. and immersed for 3 minutes or more. The thickness of this chromate film is about 0.6 μm, which is very thin, so the insulation film is easily destroyed by a light impact, and is more susceptible to damage than a phosphoric acid-chromate film.
Yield when manufacturing amorphous silicon solar cells is 15-20%
decreased.
本実施例における非晶質シリコン太陽電池は、片面に絶
縁層を形成したアルミニウム薄板を基体として用いてい
るので、巻き取りが可能であり、絶縁皮膜形成から、金
属下部電極、非晶質シリコン半導体層、透明電極形成ま
でを連続的に行なうことが可能である。The amorphous silicon solar cell in this example uses a thin aluminum plate with an insulating layer formed on one side as the base, so it can be rolled up, and from the formation of the insulating film to the metal lower electrode, the amorphous silicon semiconductor It is possible to continuously form layers and transparent electrodes.
発明の効果
以上のように本発明は、アルミニウム板の表面をリン酸
塩、クロム酸塩で、絶縁化したものを基板として用いる
ことにより、アルミニウム板上に直列接続された非晶質
シリコン太陽電池を形成することができ、薄型で可撓性
を有する太陽電池を提供することができる。しかも基板
と金属下部電極との親和性が良く、ハガレ、クラックは
生じない。Effects of the Invention As described above, the present invention provides an amorphous silicon solar cell connected in series on an aluminum plate by using as a substrate the surface of an aluminum plate insulated with phosphate or chromate. It is possible to form a thin and flexible solar cell. Moreover, the substrate and the metal lower electrode have good compatibility, and no peeling or cracking occurs.
また、ポリイミド等の耐熱性樹脂を絶縁層に用いた場合
に問題となった熱膨張係数、湿度膨張係数及び脱ガスに
よる太陽電池特性の低下もない。Furthermore, there is no deterioration in solar cell characteristics due to thermal expansion coefficient, humidity expansion coefficient, or degassing, which is a problem when heat-resistant resin such as polyimide is used for the insulating layer.
さらにアルミニウムは、放熱性が良好であるため、温度
上昇による太陽電池特性の低下をも防止できる。Furthermore, since aluminum has good heat dissipation properties, it is possible to prevent deterioration of solar cell characteristics due to temperature rise.
図はアルミニウムの片面をリン酸−クロム酸塩皮膜によ
って絶縁化された基板を用いて構成された非晶質シリコ
ン太陽電池の構成断面図である。
１・・・・・・アルミニウム板、２・・・・・・リン酸
−クロム酸塩皮膜、３・・・・・・金属下部電極、４・
・・・・・非晶質シリコン半導体層、５・・・・・・透
明電極層。The figure is a cross-sectional view of an amorphous silicon solar cell constructed using an aluminum substrate insulated on one side with a phosphoric acid-chromate film. DESCRIPTION OF SYMBOLS 1... Aluminum plate, 2... Phosphoric acid-chromate film, 3... Metal lower electrode, 4...
...Amorphous silicon semiconductor layer, 5...Transparent electrode layer.
Claims (2)
よる絶縁層で覆われたアルミニウム基板と、複数個に分
割されて前記絶縁層上に設けられた金属下部電極と、非
晶質シリコンを主成分とする半導体層と、金属下部電極
に対向するよう半導体層上に設けた透明電極とよりなる
薄膜太陽電池。(1) An aluminum substrate with at least one surface covered with an insulating layer made of phosphate or chromate, a metal lower electrode divided into multiple parts and provided on the insulating layer, and amorphous silicon. A thin film solar cell consisting of a semiconductor layer as the main component and a transparent electrode provided on the semiconductor layer to face a metal lower electrode.
酸塩、クロム酸塩の水溶液中に浸漬するか、あるいは前
記塩をスプレー塗布することによって絶縁化したのち、
その表面上に複数個に分割された金属下部電極を形成し
、さらに、この金属下部電極と絶縁層上に非晶質シリコ
ンを主成分とする半導体層を形成し、つ℃・で金属下部
電極に対向するよう半導体層上に透明電極層を形成する
ことを特徴とする薄膜太陽電池の製造方法。(2) After insulating at least one side of the aluminum plate by immersing it in an aqueous solution of phosphate or chromate or spraying the salt,
A metal lower electrode divided into a plurality of pieces is formed on the surface of the metal lower electrode, and a semiconductor layer mainly composed of amorphous silicon is formed on the metal lower electrode and the insulating layer. 1. A method for manufacturing a thin film solar cell, comprising forming a transparent electrode layer on a semiconductor layer so as to face the semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59115938A JPS60260165A (en) | 1984-06-06 | 1984-06-06 | Thin film solar battery and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59115938A JPS60260165A (en) | 1984-06-06 | 1984-06-06 | Thin film solar battery and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60260165A true JPS60260165A (en) | 1985-12-23 |
Family
ID=14674896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59115938A Pending JPS60260165A (en) | 1984-06-06 | 1984-06-06 | Thin film solar battery and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60260165A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63168056A (en) * | 1986-12-29 | 1988-07-12 | Taiyo Yuden Co Ltd | Amorphous semiconductor solar battery |
| US5558723A (en) * | 1994-04-15 | 1996-09-24 | Siemens Solar Gmbh | Thin-film solar module with electrically conductive substrate and method for the manufacture thereof |
-
1984
- 1984-06-06 JP JP59115938A patent/JPS60260165A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63168056A (en) * | 1986-12-29 | 1988-07-12 | Taiyo Yuden Co Ltd | Amorphous semiconductor solar battery |
| US5558723A (en) * | 1994-04-15 | 1996-09-24 | Siemens Solar Gmbh | Thin-film solar module with electrically conductive substrate and method for the manufacture thereof |
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