JPS60249410A - Attaching method of resonator - Google Patents

Attaching method of resonator

Info

Publication number
JPS60249410A
JPS60249410A JP59105614A JP10561484A JPS60249410A JP S60249410 A JPS60249410 A JP S60249410A JP 59105614 A JP59105614 A JP 59105614A JP 10561484 A JP10561484 A JP 10561484A JP S60249410 A JPS60249410 A JP S60249410A
Authority
JP
Japan
Prior art keywords
solder
vibrator
thick film
conductor
projections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59105614A
Other languages
Japanese (ja)
Other versions
JPH0332925B2 (en
Inventor
Hiroshi Noda
寛 野田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP59105614A priority Critical patent/JPS60249410A/en
Publication of JPS60249410A publication Critical patent/JPS60249410A/en
Publication of JPH0332925B2 publication Critical patent/JPH0332925B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/0504Holders; Supports for bulk acoustic wave devices
    • H03H9/0514Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007Surface contacts, e.g. bumps

Abstract

PURPOSE:To make posts unnecessary, to reduce the cost and to improve the yield by fusing and solidifying a solder on a solder adhesive material layer on a supporting base body to form solder projections and sticking a resonator to these projections with a binder. CONSTITUTION:Thick film conductors 17 are provided on an insulating circuit board 16, and plane circular conductor parts 17a are provided on them. Colored glass layers 19b are formed on narrow conductors 17b connected to circular conductors 17a, and simultaneously, colored glass layers 19a as positioning patterns are formed. A solder flux 25 is applied onto circular conductors 17a, and solder balls 26 are supplied onto them. Solder balls 26 are solidified by cooling after fusing to form semispherical solder projections 20 and 21. A conductive adhesive is applied onto solder projections 20 and 21, and a crystal resonator 11 is placed on solder projections 20 and 21.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、厚膜集積回路で基準周波数信号を得る場合等
に使用する水晶等の振動子を基体に取り付ける方法に関
する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for attaching a vibrator such as a crystal to a substrate, which is used when obtaining a reference frequency signal in a thick film integrated circuit.

従来の技術 厚膜集積回路において、電子回路の基準周波数を得るた
めに水晶発振器を組み込む場合、小形化のために、水晶
発振器の中に組み込まれている水晶振動子を回路基板上
に直接に支持・固定したいという要求が出てきた。
Conventional technology When incorporating a crystal oscillator to obtain the reference frequency of an electronic circuit in a thick film integrated circuit, the crystal oscillator incorporated in the crystal oscillator is supported directly on the circuit board in order to reduce the size.・There was a request to fix it.

第9図はこの要求に応えるために採用した構造を示すも
のである。図面において、(1)は回路基板、(2)は
厚膜導体、(3)は円柱状のポスト(金属性の支持具)
、(4)は円盤状の水晶振動子、(5)は水晶振動子の
電極、(6) (71は半田、(8)は導体である。
FIG. 9 shows a structure adopted to meet this requirement. In the drawing, (1) is a circuit board, (2) is a thick film conductor, and (3) is a cylindrical post (metallic support).
, (4) is a disk-shaped crystal resonator, (5) is an electrode of the crystal resonator, (6) (71 is solder, and (8) is a conductor.

発明が解決しようとする問題点 ところで、この構造には次のような欠点のあることが分
った。
Problems to be Solved by the Invention It has been found that this structure has the following drawbacks.

■ ポスト(3)のコストが高い。即ち、ポスト(3)
を比較的低コストの打ち抜き加工品とすると、第10図
に示すように、ポスト(3)の底部に周辺ダレ(9)が
生じ、ポスト(3)の側面への半田(6)のはい上がり
が少なくなるためにポスト(3)と厚膜導体(2)の間
の半田(6)の量が多くなり、ポスト(3)が傾いてし
まいやす(・0この対策として半田(6)の量を減らす
と、第11図に示すように、半田(6)によるセルフア
ライメント効果即ちポスト(3)の位置を厚膜導体(2
)の中央部に来るように自動調整する作用がなくなり、
ポスト(3)の位置ずれが発生する。ポスト(3)の傾
きや位置ずれが大きいと、ポスト間隔が狭くて水晶振動
子(4)がポスト間隔に収まらまくなったり、反対にポ
スト間隔が広すぎて水晶振動子(4)がポスト(3)か
ら落ちてしまうような不都合が発生する。従って、周辺
ダレ(9)の生じない切削加工によるポスト(3)を使
用する必要があるが、切削加工品はコストが高い。
■ The cost of post (3) is high. i.e. post (3)
If it is a relatively low-cost punched product, as shown in Figure 10, peripheral sag (9) will occur at the bottom of the post (3), and solder (6) will creep up on the side of the post (3). As the amount of solder (6) between the post (3) and the thick film conductor (2) decreases, the amount of solder (6) between the post (3) and the thick film conductor (2) increases, making it easy for the post (3) to tilt. As shown in FIG.
) is no longer automatically adjusted to the center of the
Misalignment of the post (3) occurs. If the inclination or misalignment of the posts (3) is large, the spacing between the posts may be too narrow and the crystal oscillator (4) will not fit within the spacing between the posts, or conversely, the spacing between the posts may be too wide and the crystal oscillator (4) may not fit into the post ( 3) Inconveniences such as falling down occur. Therefore, it is necessary to use a machined post (3) that does not cause peripheral sag (9), but a machined post (3) is expensive.

■ 製品歩留りが悪いっ即ち、ポスト(3)を切削加工
品とし、しかもポスト(3)に半田濡れ性の良い半田メ
ッキを施したとしてもポスト(3)の位置ずれ及び傾き
を完全に防止できないので、水晶振動子(4)を支持・
固定する工程での歩留りが良くない。
■ Product yield is poor, that is, even if the post (3) is a machined product and the post (3) is coated with solder plating with good solder wettability, it is not possible to completely prevent the post (3) from shifting and tilting. Therefore, support the crystal oscillator (4).
The yield rate in the fixing process is not good.

■ 周波数調整精度が悪い。即ち、水晶振動子(4)を
支持・固定した後の最終製造段階において、最終周波数
設定(真空中において水晶振動子の一部に銀電極をメタ
リコンして発振周波数を微調整する作業)を行う。この
最終周波数設定における歩留り(周波数調整精度)は、
基板+11と水晶振動子(4)の相対位置のずれが少な
い程良くなる。基板(1)と水晶振動子(4)の相対位
置は、基板11+の寸法の公差および厚膜導体(2)の
印刷位置の誤差に加えて、ポスト(3)の厚膜導体(2
)に対する位置ずれ及び水晶振動子(4)の大きさバラ
ツキに伴うポスト間隔内での水晶振動子(4)の位置ず
れによって主に決定される。このため、ポスト(3)が
あることにより、基板(1)と水晶振動子(4)の相対
位置のずれが大きくなってしまい、最終周波数設定にお
ける周波数調整の精度が低下し、製品歩留りを低下させ
る一因ともなっている。
■ Frequency adjustment accuracy is poor. That is, in the final manufacturing stage after supporting and fixing the crystal oscillator (4), the final frequency setting (fine adjustment of the oscillation frequency by metallising a part of the crystal oscillator in a vacuum) is performed. . The yield (frequency adjustment accuracy) at this final frequency setting is
The smaller the deviation in relative position between the substrate +11 and the crystal resonator (4), the better. The relative position of the substrate (1) and the crystal oscillator (4) is determined by the tolerance of the dimensions of the substrate 11+ and the printing position error of the thick film conductor (2), as well as the error of the thick film conductor (2) of the post (3).
) and the positional deviation of the crystal oscillator (4) within the post interval due to the size variation of the crystal oscillator (4). Therefore, the presence of the post (3) increases the relative positional deviation between the substrate (1) and the crystal resonator (4), which reduces the accuracy of frequency adjustment in the final frequency setting and reduces product yield. It is also one of the reasons why.

■ 完成品としての耐衝撃性が小さい。即ち、完成した
厚膜集積回路に対して落下強度試験を行うと、水晶振動
子(4)が衝撃を受けて割れてしまうことがある。水晶
振動子(4)に加わる衝撃はポスト(3)が高い程大き
くなる。衝撃緩和策として、ポスト(3)の代わりにL
字形金具を用いる方法もある。
■ Low impact resistance as a finished product. That is, when a drop strength test is performed on a completed thick film integrated circuit, the crystal resonator (4) may be damaged by the impact. The higher the post (3) is, the greater the impact applied to the crystal resonator (4). As a shock mitigation measure, use L instead of post (3).
Another method is to use shape metal fittings.

しかし、L字形金具を厚膜導体(2)上に固定する方法
を自動化・治具化することが難しく、L字形金具を量産
品に適用するのは困難である。
However, it is difficult to automate and use a jig to fix the L-shaped metal fitting onto the thick film conductor (2), and it is difficult to apply the L-shaped metal fitting to mass-produced products.

そこで、本発明の目的は、コストの低減、及び歩留りの
向上を図ることが出来る水晶振動子の取り付は方法を提
供することにある。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for attaching a crystal resonator that can reduce costs and improve yield.

問題点を解決するための手段 上記目的を達成するための本発明は、薄板状の振動子を
取り付けるための例えば回路基板のような支持基体上に
例えば厚膜導体のような半田付着性材料層を形成し、前
記半田付着性材料層の上に所定量の溶融又は非溶融又は
ペースト状の半田を供給し、前記半田が非溶融又はペー
スト状の場合には溶融させ、しかる後溶融状態の半田を
固化させることによって半田突起を形成し、前記半田突
起を非溶融状態に保って前記半田突起に前記振動子を例
えば銀ペーストのような接合材で固着することを特徴と
する振動子の取り付は方法に係わるものである。
Means for Solving the Problems To achieve the above object, the present invention provides a layer of a solderable material such as a thick film conductor on a supporting substrate such as a circuit board for mounting a thin plate-like vibrator. , supplying a predetermined amount of molten or unmolten solder or paste solder on the solder adhesive material layer, melting the solder when the solder is unmolten or pasty, and then applying the molten solder. Attachment of a vibrator characterized in that solder protrusions are formed by solidifying the solder protrusions, and the vibrator is fixed to the solder protrusions with a bonding material such as silver paste while keeping the solder protrusions in an unmolten state. is related to the method.

作用 上記発明の半田突起の形成工程において溶融状態の半田
を固化させれば、半田の表面張力に従う半球状の半田突
起が形成される。そして、この半田突起の形状は、供給
する半田の形状に実質的に無関係に表面張力に基づいて
決定される。従って、所定形状の突起を容易に得ること
が出来、水晶振動子の支持構造のコストを低減させるこ
とが出来る。また、半田突起が上述の如く所定形状とな
るため、水晶振動子を正確に取り付けることが可能にな
り、歩留りが向上する。
Function: If the molten solder is solidified in the solder protrusion forming step of the invention described above, hemispherical solder protrusions that follow the surface tension of the solder are formed. The shape of the solder protrusion is determined based on surface tension, substantially regardless of the shape of the supplied solder. Therefore, protrusions having a predetermined shape can be easily obtained, and the cost of the support structure for the crystal resonator can be reduced. Further, since the solder projections have a predetermined shape as described above, it becomes possible to attach the crystal resonator accurately, and the yield is improved.

実施例 次に、第1図〜第8図を参照して本発明の実施例に係わ
る厚膜集積回路における水晶振動子の取り付は方法及び
構造について述べる。
Embodiment Next, a method and structure for mounting a crystal resonator in a thick film integrated circuit according to an embodiment of the present invention will be described with reference to FIGS. 1 to 8.

第1図、第2図、及び第3図に示す水晶振動子を含む回
路装置は、第5図に示す支持装置に第4図に示す水晶振
動子01)を取り付けたものである。
The circuit device including the crystal resonator shown in FIGS. 1, 2, and 3 is obtained by attaching the crystal resonator 01) shown in FIG. 4 to the support device shown in FIG. 5.

第4図から明らかな如く、水晶振動子圓は、直径6.2
mmの円盤状薄板であり、その表面に銀から成る一方の
電極(121を有し、その裏面に銀から成る他方の電極
03)及び銀から成る支持用導体層α41(151を有
する。一方の電極α2は発振部を構成する中央の円形部
分(12a)とここに接続された細条導出部(12b)
と水晶振動子(11)の外周端の接続用端子部(12C
)とから成り、他方の電極(13)は発振部を構成する
中央の円形部分(13a)とここに接続された細条導出
部(13b)と水晶振動子01)の外周端の接続用端子
部(13c)とから成る。なお、支持用導体層(14+
は端子部(12C)に対向配置され、また支持用導体層
041(15)と端子部(13C)は正三角形の頂点位
置に相当するように約120度角度間隔に配置されてい
るう水晶振動子ttnを支持する厚膜集積回路は、アル
ミナ製の回路基板(161、第3図及び第5図で右上り
の斜線を付して示す銀−パラジウム系厚膜導体(+7)
、第3図及び第5図で右下りの斜線を付して示す酸化ル
テニウム系の厚膜抵抗(181、水晶振動子01)の形
状に対応して円弧状に配置された位置決めパターンとし
ての着色ガラス層(19a) 、半田流れ止め用の着色
ガラス層(19b) 、厚膜導体0Dの上に設けられた
3つの半田突起(20) (2]) (221とから成
る。半田突起f20) (211+22)に対する水晶
振動子α1)の接合は、半田突起(2QCI!υ(2洒
を溶融して行わず、導電性接着材(銀ペースト)を使用
して行う。第1図〜第3図における(ハ)は銀ペースト
による接合導体層(2鵠を示す。水晶振動子α1)の上
側の電極α2の電気的接続は銀ペーストを塗布し、熱処
理することによって形成した導体(24)により行われ
、一方、下側の電極03)の電気的接続は半田突起(イ
)上の接合導体層CI!31によって行われている。
As is clear from Figure 4, the crystal oscillator circle has a diameter of 6.2
It is a disc-shaped thin plate of mm in diameter, and has one electrode (121) made of silver on its surface, and the other electrode 03 made of silver on its back surface, and a supporting conductor layer α41 (151) made of silver. Electrode α2 consists of a central circular part (12a) constituting an oscillating part and a strip lead-out part (12b) connected thereto.
and the connection terminal part (12C) on the outer peripheral edge of the crystal resonator (11).
), and the other electrode (13) consists of a central circular part (13a) constituting the oscillating part, a strip lead-out part (13b) connected thereto, and a connection terminal at the outer peripheral end of the crystal oscillator 01). (13c). In addition, the supporting conductor layer (14+
is arranged to face the terminal part (12C), and the supporting conductor layer 041 (15) and the terminal part (13C) are arranged at an angular interval of about 120 degrees so as to correspond to the apex position of an equilateral triangle. The thick film integrated circuit that supports the child ttn is made of an alumina circuit board (161) and a silver-palladium thick film conductor (+7) shown with diagonal lines in the upper right corner of FIGS. 3 and 5.
, Coloring as a positioning pattern arranged in an arc corresponding to the shape of the ruthenium oxide thick film resistor (181, crystal oscillator 01) shown with diagonal lines downward to the right in FIGS. 3 and 5. Consists of a glass layer (19a), a colored glass layer (19b) for preventing solder flow, and three solder protrusions (20) (2]) (221) provided on the thick film conductor 0D.Solder protrusions f20) ( 211+22) is bonded to the crystal resonator α1) by using a conductive adhesive (silver paste) without melting the solder protrusions (2QCI!υ). (c) shows a bonding conductor layer (2) made of silver paste. The electrical connection of the upper electrode α2 of the crystal oscillator α1 is made by a conductor (24) formed by applying silver paste and heat-treating it. , On the other hand, the electrical connection of the lower electrode 03) is performed by the bonding conductor layer CI!31 on the solder projection (a).

次に、厚膜集積回路基板(16)に対する水晶振動子(
Illの取り付は方法を工程順に説明する。
Next, the crystal resonator (
The method for installing Ill will be explained step by step.

まず、絶縁性の回路基板06)の上に厚膜導体α力、及
び厚膜抵抗08)を形成する。なお、厚膜導体Onの上
に後の工程で半田突起(20) (211(221を設
けるために第6図(4)に示すように平面形状円形の導
体部(17a)を設ける。また、基板(+6)の表面を
有効に利用するために、水晶振動子01)の取り付は領
域にも第5図に示す如く厚膜抵抗いを設ける。厚膜抵抗
α樽と水晶振動子(11)の電極αJとの間隔は、直径
数mmの円盤状水晶振動子の場合で20μm程度以上確
保すれば実用上問題がない。そこで、本実施例では上記
間隔が約200μmとされて℃・る。
First, a thick film conductor α and a thick film resistor 08) are formed on an insulating circuit board 06). Note that, in order to provide solder protrusions (20) (211 (221)) on the thick film conductor On in a later step, a conductor portion (17a) having a circular planar shape is provided as shown in FIG. 6 (4). In order to effectively utilize the surface of the substrate (+6), a thick film resistor is provided in the mounting area of the crystal resonator (01) as shown in Figure 5.Thick film resistor α barrel and crystal resonator (11) ) with the electrode αJ, there is no practical problem as long as it is about 20 μm or more in the case of a disc-shaped crystal resonator with a diameter of several mm.Therefore, in this example, the above-mentioned distance is set to about 200 μm. .

次に、第5図及び第6図に示すように、円形導体(17
a)に連続する細条導体(17b)の上に着色ガラス層
(19b)を形成すると同時に、位置決めパターンとし
ての着色ガラス層(19a)を形成する。なお、ガラス
層(19a) (tc+b)、導体αn、抵抗側はスク
リーン印刷と熱処理とによる厚膜技術でそれぞれ形成す
る。
Next, as shown in FIGS. 5 and 6, a circular conductor (17
A colored glass layer (19b) is formed on the strip conductor (17b) continuous to a), and at the same time a colored glass layer (19a) is formed as a positioning pattern. Note that the glass layers (19a) (tc+b), the conductor αn, and the resistor side are each formed using a thick film technique using screen printing and heat treatment.

次に、半田突起(201(2υ(221を形成するため
の円形導体(17a)の上に液状の半田フラックス(2
51を第7図に示す如く塗布し、この上にPb −Sn
共晶半田(融点18’3 C)から成る半田球(261
を供給し、この半田球c!6)を半田フラックス(謙の
粘着力で仮り止めする。
Next, liquid solder flux (2
51 as shown in FIG. 7, and Pb-Sn
Solder ball (261) made of eutectic solder (melting point 18'3 C)
Supply this solder ball c! Temporarily fix 6) with solder flux (Ken's adhesive strength).

次に、240Cの熱処理によって半田球QOを溶融させ
た後、冷却・固化させ、第8図に示すように半球状の半
田突起(イ)を形成する1、第8図には1つの半田突起
(2■が示されているが、残りの半田突起CI!+1 
(221も同様に形成する3、この際、半田突起(20
) (2υはガラス層(19b)に制限されて円形導体
(17a)上にのみ形成され、半田突起(2渇は円形導
体(17a)の上にのみ形成される。この半田突起(2
0+ (21) (221の高さは、半田量と円形導体
(17a)の面積に関係し、これ等を高精度に調整すれ
ば必然的に高精度に決定される。
Next, after melting the solder ball QO by heat treatment at 240C, it is cooled and solidified to form a hemispherical solder protrusion (A) as shown in Fig. 8. (2■ is shown, but the remaining solder protrusions CI!+1
(221 is formed in the same way 3. At this time, the solder protrusion (20
) (2υ is limited to the glass layer (19b) and is formed only on the circular conductor (17a), and the solder protrusion (2υ is formed only on the circular conductor (17a).
0+ (21) (The height of 221 is related to the amount of solder and the area of the circular conductor (17a), and if these are adjusted with high precision, it will inevitably be determined with high precision.

次に、各半田突起f20) (2+1 (22+の上に
、導電性接着材として銀ペーストを塗布し、次いで円弧
状に形成されたガラス層(t9a)を位置決めパターン
として利用し、水晶振動子θ1)を銀ペーストを介して
半田突起(201(2υ(221の上に載置する、この
時、水晶振動子aυの電極(+31の端子部(13c)
と支持用導体層α41+15+を各半田突起(20+(
2υ(2′;3の上に対向配置する。しかる後、約15
00で銀ペーストを熱処理し、これによって得られる接
合導体層(ハ)によって各半田突起(2■(2υ(イ)
に対し端子部(13c)及び導体層041 (151を
固着する。
Next, silver paste is applied as a conductive adhesive onto each solder projection f20) (2+1 (22+), and then the glass layer (t9a) formed in an arc shape is used as a positioning pattern to ) is placed on the solder protrusion (201 (2υ) (221) through silver paste. At this time, the terminal part (13c) of the crystal resonator aυ (+31)
and supporting conductor layer α41+15+ with each solder protrusion (20+(
2υ(2′; Placed oppositely on top of 3. Then, about 15
00, and the resulting bonding conductor layer (c) forms each solder protrusion (2■ (2υ(a)).
The terminal portion (13c) and the conductor layer 041 (151) are fixed to the terminal portion (13c).

なお、この工程で半田突起(2)f2+) (221の
高さを変化させ歿いために、半田の融点よりも低い温度
で熱処理しなければならない。
Note that in this step, in order to change the height of the solder protrusion (2) f2+) (221), heat treatment must be performed at a temperature lower than the melting point of the solder.

次に、電極C121の端子部(12c)を基板(16)
上の導体αηに電気的に接続するために、第1図及び第
3図に示す如く接続導体Q4を設ける。即ち、銀ペース
トを端子部(12C)から半田突起0I)上の接合導体
層(ハ)に至るように塗布し、半田突起(4)(211
(221を再溶融させない温度で熱処理することにより
、接続導体c!4)を形成する。
Next, connect the terminal part (12c) of the electrode C121 to the substrate (16).
In order to electrically connect to the upper conductor αη, a connecting conductor Q4 is provided as shown in FIGS. 1 and 3. That is, silver paste is applied from the terminal part (12C) to the bonding conductor layer (C) on the solder projection (0I), and then the silver paste is applied to the solder projection (4) (211
(Connection conductor c!4) is formed by heat treatment at a temperature that does not remelt 221.

本実施例は次の利点を有する。This embodiment has the following advantages.

軸)従来の装置で材料コスト高の原因になったポスト(
3)が不要となり、この分だけ材料コストが低減される
。なお、ポスト(3)の組み込みの製造コストと半田突
起(201(2υ(221の形成の製造コストとはほぼ
同等であるので、総合した製品コストは低減する。
shaft) The post (
3) is no longer necessary, and the material cost is reduced accordingly. Note that the manufacturing cost for assembling the post (3) and the manufacturing cost for forming the solder projection (201 (2υ) (221) are almost the same, so the total product cost is reduced.

(b) ポスト(3)を使用しないので、製品(厚膜集
積回路)の歩留りを悪くしていたポスト(3)の傾きや
位置ずれあるいはポスト間隔内での水晶振動子(4)の
位置すれという問題が発生しない。従って、歩留りが向
上する。
(b) Since the post (3) is not used, the inclination or misalignment of the post (3) or misalignment of the crystal oscillator (4) within the post spacing may reduce the yield of products (thick film integrated circuits). This problem does not occur. Therefore, the yield is improved.

(C1完成品としての耐衝撃性が大きい。即ち、水晶振
動子(111の支持高さは、従来の水晶振動子(4)の
場合(1mm程度以上)と比べると大幅に小さくできる
。この支持高さが小さい程、回路基板(161が曲げら
れたとき、水晶振動子Qυに作用する変形量が小さくな
る。このため、製品の落下強度試験を行うと、従来より
水晶振動子(11)が割れにくくなっている。
(C1 has high impact resistance as a finished product. In other words, the support height of the crystal resonator (111) can be significantly smaller than that of the conventional crystal resonator (4) (approximately 1 mm or more). The smaller the height, the smaller the amount of deformation that acts on the crystal oscillator Qυ when the circuit board (161) is bent.For this reason, when the product is subjected to a drop strength test, the crystal oscillator (11) It is less likely to break.

(d) 水晶振動子(Illの歩留りが向上する。即ち
、水晶振動子(Iυの大きさのバラツキがかなりあって
も、水晶振動子(Illを半田突起(2111(211
(221に載置するときの位置を調整することにより支
障は生じない、。
(d) The yield of crystal resonators (Ill) is improved. In other words, even if there is considerable variation in the size of crystal resonators (Iυ), solder protrusions (2111 (211
(Adjusting the position when placing it on 221 will not cause any trouble.)

従って、ポスト(3)で支持していた従来なら直径大あ
るいは直径小として使用できなかった水晶振動子も使用
可能となった。
Therefore, it is now possible to use a crystal resonator that was previously supported by posts (3) and could not be used due to its large or small diameter.

(e) 上記(a)〜(d)の総合結果として、製品コ
ストの低減および製品の信頼性向上が達成される。
(e) As a comprehensive result of the above (a) to (d), a reduction in product cost and an improvement in product reliability are achieved.

変形例 本発明は上述の実施例に限定されるものでなく、例えば
、次のような変形例が可能なものである。
Modifications The present invention is not limited to the above-described embodiments, and, for example, the following modifications are possible.

囚 固体の半田球(261を供給する代りK、半田ペー
ストを印刷で塗布し、これを溶融することによって半田
突起(21111(211(2zを形成してもよい。ま
た、円形導体部(17a)を半田浴に接触させる方法等
によって溶融半田を導体部(17a)に供給17、これ
に基づいて半田突起(2(j (211(221を形成
してもよい。
Instead of supplying a solid solder ball (261), solder paste may be applied by printing and melted to form a solder protrusion (21111 (211(2z). Also, a circular conductor portion (17a) Molten solder may be supplied 17 to the conductor portion (17a) by a method such as bringing the solder into contact with a solder bath, and based on this, the solder protrusions (2(j) (211 (221) may be formed).

03) 接合導体層(23+を銀ペースト以外の導電性
接着材又は接合材で形成してもよい、なお、半田によっ
て接合導体層(23)を形成する場合には、半田突起(
J (21) (221よりも融点の低い半田を使用す
る。
03) The bonding conductor layer (23+) may be formed with a conductive adhesive or bonding material other than silver paste. In addition, when forming the bonding conductor layer (23) with solder, solder protrusions (
J (21) (Use a solder with a lower melting point than 221.

(0水晶振動子θ1)を2点支持又は4点支持等する場
合にも適用可能である。
It is also applicable when supporting (0 crystal oscillator θ1) at two points or four points.

■ 実施例では半田突起(イ)の上の導体層□□□は電
気的接続に直接に利用され、その他の半田突起(211
(221の上の導体層(至)は電気的接続に直接に利用
されていないが、総ての半田突起(2(1(21+ (
221を電気的接続に利用せず、単に機械的支持にのみ
利用するようにしてもよい。この場合には、半田突起(
イ)(21)(221の下の円形導体部(17a)を不
導体又は抵抗値の大きい牛田付着性材料層に置き換えて
もよ〜ツ1また、この場合には端子部(13C)、及び
導体層Q41(19を不導体又は抵抗値の大きい材料で
形成してもよい。
■ In the example, the conductor layer □□□ above the solder projection (A) is directly used for electrical connection, and the other solder projections (211
(The conductor layer (to) above 221 is not directly used for electrical connection, but all solder protrusions (2(1(21+)
221 may not be used for electrical connection, but merely for mechanical support. In this case, the solder protrusion (
B) (21) (221) The circular conductor part (17a) under (221) may be replaced with a nonconductor or a layer of Ushida adhesive material with a large resistance value. The conductor layer Q41 (19) may be formed of a nonconductor or a material with a large resistance value.

(ト) 電極(12+の一部を水晶振動子ttnの下面
側に予め導出し、導体(241を形成する工程を省いて
もよい。
(G) A part of the electrode (12+) may be led out in advance to the lower surface side of the crystal resonator ttn, and the step of forming the conductor (241) may be omitted.

発明の効果 本発明によれば、溶融半田を固化させることによって半
田突起を形成し、これによって振動子を支持しているの
で、高価なポストを使用することが不要になり、コスト
の低減が出来る。また、ポストを使用する場合には、ポ
ストの装着状態を一定にすることが難しいが、半田突起
の場合には、半田の量と半田付は部分の面積を一定にし
ておくと、半田の表面張力に基づいてほぼ一定形状及び
一定高さの半田突起を形成することが出来る。従って、
歩留りを向上させることが出来る。
Effects of the Invention According to the present invention, solder protrusions are formed by solidifying molten solder, and the vibrator is supported thereby, making it unnecessary to use expensive posts and reducing costs. . In addition, when using a post, it is difficult to keep the post attached in a constant state, but in the case of solder protrusions, if the amount of solder and the area of the soldering part are kept constant, the solder surface Based on the tension, solder protrusions having a substantially constant shape and constant height can be formed. Therefore,
Yield can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例に係わる水晶振動子を含む厚膜
集積回路の一部を示す第3図のA−A線に相当する部分
の断面図、第2図は第3図のB−B線に相当する部分の
断面図、第3図は厚膜集積回路の一部を示す平面図、第
4図は第1図の水晶振動子を示す平面図、第5図は第1
図の水晶振動子の取り付は基板を示す平面図、第6図(
4)、第7図(4)、及び第8図(4)は半田突起形成
部分を工程順に示す平面図、第6図(B)、第7図03
)、及び第8図CB)は、半田突起形成部分を工程順に
示す第6図囚、第7図(4)、及び第8図(4)のC−
C線に相当する部分の断面図、第9図は従来の水晶振動
子の支持構造を示す断面図、第1O図及び第11図は第
9図のポストの状態を示す断面図である。 Ql)・・・水晶振動子、(12+・・・−芳の電極、
(12c)・・・端子部、(Iり・・・他方の電極、(
13c)・・・端子部、α似[訃・・支持用導体層、θ
6)・・・基板、(In・・・厚膜導体、(17a)・
・・円形導体部、(110・・・厚膜抵抗、(19a)
09b)・・・ガラス層、■(21)(221・・・半
田突起、(支))・・・接合導体層、(26)・・・半
田球。 代理人 高野則次 第4図 第6図 uj7図 第8目
1 is a sectional view of a portion corresponding to line A-A in FIG. 3 showing a part of a thick film integrated circuit including a crystal resonator according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a portion corresponding to line B in FIG. 3 is a plan view showing a part of the thick film integrated circuit, FIG. 4 is a plan view showing the crystal resonator shown in FIG. 1, and FIG.
The installation of the crystal resonator shown in the figure is a plan view showing the board, and Figure 6 (
4), FIG. 7(4), and FIG. 8(4) are plan views showing the solder protrusion forming portion in the order of steps, FIG. 6(B), and FIG. 703.
), and FIG. 8 CB) are C- in FIG. 6, FIG. 7 (4), and FIG.
FIG. 9 is a cross-sectional view of a portion corresponding to line C, FIG. 9 is a cross-sectional view showing a conventional support structure for a crystal resonator, and FIGS. 1O and 11 are cross-sectional views showing the state of the post in FIG. 9. Ql)...Crystal oscillator, (12+...- aromatic electrode,
(12c)...Terminal part, (Iri...other electrode, (
13c)...Terminal part, α similar [end...Supporting conductor layer, θ
6)...Substrate, (In...thick film conductor, (17a)...
...Circular conductor part, (110...Thick film resistor, (19a)
09b)...Glass layer, (21) (221...Solder protrusion, (support))...Joining conductor layer, (26)...Solder ball. Agent Noriyoshi Takano 4th figure 6th figure uj 7th figure 8th

Claims (1)

【特許請求の範囲】 (11薄板状の振動子を取り付けるための支持基体上に
半田付着性材料層を形成し、前記半田付着性材料層の上
に所定量の溶融又は非溶融又はペースト状の半田を供給
し、前記半田が非溶融又はペースト状の場合には溶融さ
せ、しかる後溶融状態の半田を固化させることによって
半田突起を形成し、前記半田突起を非溶融状態に保って
前記半田突起に前記振動子を接合材で固着することを特
徴とする振動子の取り付は方法。 (2)前記半田付着性材料層は厚膜導体である特許請求
の範囲第1項記載の振動子の取り付は方法。 (3)前記半田付着性材料層が三角形の頂点位置に相当
する3箇所に形成されたものである特許請求の範囲第1
項又は第2項記載の振動子の取り付は方法。 (4)前記半田突起を形成することは、固体の半田球を
前記半田付着性材料層の上に供給し、この半田球を溶融
し、しかる後固化させることである特許請求の範囲第1
項又は第2項又は第3項記載の振動子の取り付は方法。 (5)前記接合材は導電性接合材である特許請求の範囲
第1項又は第2項又は第3項又は第4項記載の振動子の
取り付は方法。 (6)前記接合材は銀ペーストである特許請求の範囲第
5項記載の振動子の取り付は方法。 (7)前記振動子は水晶振動子である特許請求の範囲第
1項又は第2項又は第3項又は第4項又は第5記載の振
動子の取り付は方法1.
[Scope of Claims] (11) A layer of a solderable material is formed on a supporting base on which a thin plate-like vibrator is attached, and a predetermined amount of molten or non-melted or pasty material is formed on the solderable material layer. A solder projection is formed by supplying solder, melting the solder when the solder is unmolten or paste-like, and then solidifying the molten solder, and forming a solder projection by keeping the solder projection in an unmolten state. A method for attaching a vibrator, characterized in that the vibrator is fixed with a bonding material. (2) The vibrator according to claim 1, wherein the solderable material layer is a thick film conductor. The attachment is a method. (3) Claim 1, wherein the solder adhesive material layer is formed at three locations corresponding to the apex positions of a triangle.
How to install the vibrator described in Section 2 or Section 2. (4) Forming the solder projections includes supplying solid solder balls onto the layer of solder adhesive material, melting the solder balls, and then solidifying the solder balls.
The method for installing the vibrator described in Section 2 or Section 2 or Section 3. (5) A method for attaching a vibrator according to claim 1 or 2 or 3 or 4, wherein the bonding material is a conductive bonding material. (6) A method for attaching a vibrator according to claim 5, wherein the bonding material is silver paste. (7) The vibrator is attached by method 1 according to claim 1, 2, 3, 4, or 5, wherein the vibrator is a crystal vibrator.
JP59105614A 1984-05-24 1984-05-24 Attaching method of resonator Granted JPS60249410A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59105614A JPS60249410A (en) 1984-05-24 1984-05-24 Attaching method of resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59105614A JPS60249410A (en) 1984-05-24 1984-05-24 Attaching method of resonator

Publications (2)

Publication Number Publication Date
JPS60249410A true JPS60249410A (en) 1985-12-10
JPH0332925B2 JPH0332925B2 (en) 1991-05-15

Family

ID=14412374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59105614A Granted JPS60249410A (en) 1984-05-24 1984-05-24 Attaching method of resonator

Country Status (1)

Country Link
JP (1) JPS60249410A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02305209A (en) * 1989-05-19 1990-12-18 Matsushita Electric Ind Co Ltd Piezoelectric ceramic resonator
JPH03274817A (en) * 1990-03-23 1991-12-05 Murata Mfg Co Ltd Oscillator and its manufacture
JPH0648226U (en) * 1992-10-13 1994-06-28 株式会社村田製作所 Piezoelectric element mounting structure
JPH06205805A (en) * 1993-01-11 1994-07-26 Kao Corp Manufacture of absorbing body and production equipment therefor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02305209A (en) * 1989-05-19 1990-12-18 Matsushita Electric Ind Co Ltd Piezoelectric ceramic resonator
JPH03274817A (en) * 1990-03-23 1991-12-05 Murata Mfg Co Ltd Oscillator and its manufacture
JPH0648226U (en) * 1992-10-13 1994-06-28 株式会社村田製作所 Piezoelectric element mounting structure
JPH06205805A (en) * 1993-01-11 1994-07-26 Kao Corp Manufacture of absorbing body and production equipment therefor

Also Published As

Publication number Publication date
JPH0332925B2 (en) 1991-05-15

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