JPS60242629A - Wire-bonding device - Google Patents

Wire-bonding device

Info

Publication number
JPS60242629A
JPS60242629A JP60095501A JP9550185A JPS60242629A JP S60242629 A JPS60242629 A JP S60242629A JP 60095501 A JP60095501 A JP 60095501A JP 9550185 A JP9550185 A JP 9550185A JP S60242629 A JPS60242629 A JP S60242629A
Authority
JP
Japan
Prior art keywords
wire
bonding
vibration
wedge
subjected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60095501A
Other languages
Japanese (ja)
Inventor
Kazuhisa Takashima
高島 一壽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60095501A priority Critical patent/JPS60242629A/en
Publication of JPS60242629A publication Critical patent/JPS60242629A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • H01L2224/78314Shape
    • H01L2224/78317Shape of other portions
    • H01L2224/78318Shape of other portions inside the capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding

Abstract

PURPOSE:To avoid poor bonding or improper contact bonding by a method wherein wire fed out of a feed opening of a wire pressing tool is subjected to a mechanical or ultrasonic vibration. CONSTITUTION:A wedge 4 is subjected to vibration in a process wherein wire is fed from a feed opening and through a calmp 6. The wire ocassinally arrested at the angle of the wedge 4 may be easily released due to vibration, which ensures a regular supply of wire through the champ 6. In the conventional method, the wedge 4 is to experience two ultrasonic vibrations in a single bonding process. In this device, a third shock of vibration, which may be of mechanical nature, adds to the wire feeding process. Consequently, accidental lack of bonding and geometrical impropriety due to shortage in the quantity of wire supplied are greatly reduced.

Description

【発明の詳細な説明】 本発明は超音波ワイヤボンディングに関し、主として半
導体装置の電極をワイヤにより超音波接合して組立てる
場合のワイヤボンディングを対象とするものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to ultrasonic wire bonding, and is primarily directed to wire bonding in which electrodes of a semiconductor device are assembled by ultrasonic bonding using wires.

超音波ワイヤボンディング法は第1図を参照し接合に際
してワイヤを押さえるための(さび型棒状体であるウェ
ッジを使用し、その押え部をなすヒール部(かかと)5
でワイヤ(例えばAりをアルミニウム電極に押しつけた
状態で上記ウェッジに超音波振動を与えることにより行
うワイヤボンディング法であり、一般に同図(a)〜(
flに示す順序でボンディングが行なわれる。(a)は
クランパー6を閉じてワイヤ3を供給する状態、(bl
はワイヤ3をウェッジ4のヒール5で押しつけ、超音波
振動を与えることによりチップlの電極2にボンディン
グする状態、(clはクランパー6を開いたままウェッ
ジ4をリード7の先端部上に移動している状態、(d+
は再びワイヤ3をウェッジ4のヒー/I15で押しつけ
、超音波振動を与えることによりリード7にボンディン
グする状態、(e)はクランパー6を閉じた状態で、ク
ランパー6を後に引いてワイヤ3を切離す状態、(f)
はウェッジ4、クランパー6を一体に上昇した状態をそ
れぞれ示すものである。(f)に示す状態から(a)に
示す状態に移行し、これら一連の動作が繰返されること
になる。
Referring to Fig. 1, the ultrasonic wire bonding method uses a wedge (a wedge-shaped rod-shaped body) to hold down the wire during bonding, and a heel part (heel) 5 serving as the holding part.
This is a wire bonding method that is performed by applying ultrasonic vibration to the wedge while pressing a wire (for example, A) against an aluminum electrode.
Bonding is performed in the order shown in fl. (a) shows a state in which the clamper 6 is closed and the wire 3 is supplied, (bl
In , the wire 3 is pressed with the heel 5 of the wedge 4 and bonded to the electrode 2 of the chip 1 by applying ultrasonic vibration. state, (d+
(e) is a state in which the wire 3 is pressed again with the heat/I15 of the wedge 4 and bonded to the lead 7 by applying ultrasonic vibration, and (e) is a state in which the clamper 6 is closed and the wire 3 is cut by pulling the clamper 6 backward. Release state, (f)
1 shows the wedge 4 and clamper 6 in a raised state. The state shown in (f) shifts to the state shown in (a), and these series of operations are repeated.

ところで、従来において、第1図(a)に示すワイヤ3
の供給をする動作で、第2図に示すようにウェッジ4の
ヒール50角部すあるいはワイヤ供給孔の角部aにワイ
ヤ3の先端があたり、ワイヤが正しく供給されないこと
があった。これは、ワイヤ3の先端に曲りCができる場
合に多(起き、その結果、ボンディングされないという
不良あるいは圧着不良が発生した。
By the way, conventionally, the wire 3 shown in FIG. 1(a)
During the feeding operation, the tip of the wire 3 hits the corner of the heel 50 of the wedge 4 or the corner a of the wire feed hole, as shown in FIG. 2, and the wire may not be fed correctly. This often occurs when a bend C is formed at the tip of the wire 3, resulting in failure of not bonding or crimping failure.

元来、ワイヤはワイヤ供給孔内の遊びを利用して、より
水平に近い角度で供給することが望ましい。すなわち、
クランプ6によって供給されたワイヤをウェッジで押さ
えるためにウェッジが下降する際、ワイヤ供給孔内なワ
イヤが若干上昇する(戻る)という現象が起き(このと
きはクランプば開いているからワイヤ3の先端が電極2
の表面、に押さえられた状態になるため起きる)、ウェ
ッジ4のヒール5で押えられる面積が不充分となる場合
があるが、ワイヤをより水平に近い向きにすればする程
その傾向が小さくなるからであり、また、ワイヤの向き
をより水平に近い向きにする程テールの長さが短か(す
ることができるからである。
Originally, it is desirable to feed the wire at a more horizontal angle by utilizing the play within the wire feed hole. That is,
When the wedge descends to hold down the wire supplied by the clamp 6, a phenomenon occurs in which the wire in the wire supply hole slightly rises (returns) (at this time, since the clamp is open, the tip of the wire 3 is electrode 2
), the area pressed by the heel 5 of the wedge 4 may be insufficient, but the more horizontal the wire is, the less this tendency will occur. This is because the length of the tail is shorter as the wire is oriented more horizontally.

しかるに、ワイヤを水平に近づけた(寝かせた)方向で
供給すればする程、ワイヤの先端が角部aあるいはbで
ひっかかる可能が多くなる。しだがって、ひっかかりを
なくすこととワイヤのもどりをな(すことは二律背反の
関係にあった。
However, the more the wire is fed in a horizontal (laying down) direction, the more likely the tip of the wire will get caught at corner a or b. Therefore, there was a trade-off between eliminating snags and making the wire return.

したがって本発明はかかるワイヤのひっかかりをな(て
ことを目的とするもので、その要旨はワイヤ押付具に設
けたワイヤ供給孔内な通してワイヤを供給するワイヤ・
ボンディング装置において、■記ワイヤ押付具が第1ボ
ンディング点から第2ぎンディング点に移動する際に前
記ワイヤに機械的振動又は超音波振動を供給するように
したことこれを詳細に述べれば、ワイヤ供給孔内を通し
てクランプによりワイヤを供給する際にウェッジに対し
て振動を与えれば、例え一時的にワイヤの先端が角部a
、bにひっかかっても振動によりすぐはずれ、クランプ
によりて正しくワイヤが供給されるのである。
Therefore, it is an object of the present invention to prevent such wires from getting caught.
In the bonding device, mechanical vibration or ultrasonic vibration is applied to the wire when the wire pressing tool (1) moves from the first bonding point to the second bonding point. If vibration is applied to the wedge when feeding the wire through the feed hole with a clamp, the tip of the wire may temporarily move to the corner a.
, b, it will come off immediately due to vibration, and the clamp will feed the wire correctly.

この振動は、従来において一回のワイヤボンディングで
超音波振動が2回ウェッジに加えられた:、6事えは2
回の圧着工程の際に加えられた)のを1回増やし、ワイ
ヤ供給時〔第1図(a)K示す動作時〕にも超音波振動
を加えることによって与えることができる、しかし、こ
れは単なる機械的振動でもよい。
Conventionally, ultrasonic vibrations were applied to the wedge twice in one wire bonding process.
(applied during the crimping process) can be increased by one and also by adding ultrasonic vibration when feeding the wire [during the operation shown in Fig. 1 (a) K]. However, this can be applied by It may be just mechanical vibration.

その結果、ボンディングされないという事故、あるいは
ワイヤ供給量不足が原因となる圧着形状不良が極めて少
なくなった。また、それに伴って、ワイヤ供給孔内の遊
びを最大限に利用してワイヤをより水平に近い方向で供
給できるようになり、その結果、ワイヤのテールの長さ
が従来よりも20μm短かくなり、配線短絡事故が少な
くなった。
As a result, accidents such as non-bonding or defective crimped shapes due to insufficient wire supply have been extremely reduced. Additionally, the wire can be fed in a more horizontal direction by maximizing the play in the wire feed hole, and as a result, the length of the wire tail is 20 μm shorter than before. , fewer wiring short-circuit accidents.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)〜(flは一回のワイヤボンディング作業
における各動作を71j11に示す断面図、第2図は従
来の問題点を示す断面図である。 l・・・チップ% 2・・・電極、3・・・ワイヤ、4
・・・ウェッジ、5・・・ヒール、6・・・クランパー
、7・・・リード、a + k)・・・角部、C・・・
リードの曲り。 第 1 図 1/11 第 1 図 (e) 第 2 図
FIGS. 1(a) to (fl are cross-sectional views showing each operation in one wire bonding operation at 71j11, and FIG. 2 is a cross-sectional view showing conventional problems. l...Chip% 2...・Electrode, 3...Wire, 4
... Wedge, 5... Heel, 6... Clamper, 7... Lead, a + k)... Corner, C...
Bent lead. Figure 1 Figure 1/11 Figure 1 (e) Figure 2

Claims (1)

【特許請求の範囲】[Claims] 1、 ワイヤ押付具に設けたワイヤ供給孔内を通してワ
イヤを供給するワイヤ・ボンディング装置において、前
記ワイヤ押付具が第1ボンディング点から第2ボンディ
ング点に移動する際に前記ワイヤに機械的振動又は超音
波振動を供給するようにしたことを特徴とするワイヤ・
ボンディング装置。
1. In a wire bonding device that supplies a wire through a wire supply hole provided in a wire pressing tool, the wire is subjected to mechanical vibration or vibration when the wire pressing tool moves from a first bonding point to a second bonding point. A wire characterized by supplying sonic vibrations.
bonding equipment.
JP60095501A 1985-05-07 1985-05-07 Wire-bonding device Pending JPS60242629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60095501A JPS60242629A (en) 1985-05-07 1985-05-07 Wire-bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60095501A JPS60242629A (en) 1985-05-07 1985-05-07 Wire-bonding device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP53007305A Division JPS6052585B2 (en) 1978-01-27 1978-01-27 wire bonding method

Publications (1)

Publication Number Publication Date
JPS60242629A true JPS60242629A (en) 1985-12-02

Family

ID=14139341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60095501A Pending JPS60242629A (en) 1985-05-07 1985-05-07 Wire-bonding device

Country Status (1)

Country Link
JP (1) JPS60242629A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101668A (en) * 1978-01-27 1979-08-10 Hitachi Ltd Ultrasonic wire bonding method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101668A (en) * 1978-01-27 1979-08-10 Hitachi Ltd Ultrasonic wire bonding method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method

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