JPS60240168A - 光電変換装置の作製方法 - Google Patents

光電変換装置の作製方法

Info

Publication number
JPS60240168A
JPS60240168A JP59097319A JP9731984A JPS60240168A JP S60240168 A JPS60240168 A JP S60240168A JP 59097319 A JP59097319 A JP 59097319A JP 9731984 A JP9731984 A JP 9731984A JP S60240168 A JPS60240168 A JP S60240168A
Authority
JP
Japan
Prior art keywords
semiconductor
type
junction
type semiconductor
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59097319A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0525186B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP59097319A priority Critical patent/JPS60240168A/ja
Publication of JPS60240168A publication Critical patent/JPS60240168A/ja
Priority to US07/277,451 priority patent/US4878097A/en
Priority to US07/303,995 priority patent/US4950614A/en
Priority to US07/321,056 priority patent/US4971919A/en
Priority to US07/336,550 priority patent/US4954856A/en
Priority to US07/536,474 priority patent/US5045482A/en
Publication of JPH0525186B2 publication Critical patent/JPH0525186B2/ja
Priority to US08/310,375 priority patent/US5478777A/en
Priority to US08/527,345 priority patent/US5580820A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP59097319A 1984-05-15 1984-05-15 光電変換装置の作製方法 Granted JPS60240168A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP59097319A JPS60240168A (ja) 1984-05-15 1984-05-15 光電変換装置の作製方法
US07/277,451 US4878097A (en) 1984-05-15 1988-10-21 Semiconductor photoelectric conversion device and method for making same
US07/303,995 US4950614A (en) 1984-05-15 1989-01-30 Method of making a tandem type semiconductor photoelectric conversion device
US07/321,056 US4971919A (en) 1984-05-15 1989-03-09 Semiconductor photoelectric conversion device and method of making the same
US07/336,550 US4954856A (en) 1984-05-15 1989-04-10 Semiconductor photoelectric conversion device and method of making the same
US07/536,474 US5045482A (en) 1984-05-15 1990-06-12 Method of making a tandem PIN semiconductor photoelectric conversion device
US08/310,375 US5478777A (en) 1984-05-15 1994-09-22 Method of making a semiconductor photoelectric conversion device having a crystalline I-type layer
US08/527,345 US5580820A (en) 1984-05-15 1995-09-12 Method of forming a semiconductor material having a substantially I-type crystalline layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59097319A JPS60240168A (ja) 1984-05-15 1984-05-15 光電変換装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4193007A Division JPH05206492A (ja) 1992-06-26 1992-06-26 光電変換装置

Publications (2)

Publication Number Publication Date
JPS60240168A true JPS60240168A (ja) 1985-11-29
JPH0525186B2 JPH0525186B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-04-12

Family

ID=14189162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59097319A Granted JPS60240168A (ja) 1984-05-15 1984-05-15 光電変換装置の作製方法

Country Status (1)

Country Link
JP (1) JPS60240168A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62142372A (ja) * 1985-12-17 1987-06-25 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS62142373A (ja) * 1985-12-17 1987-06-25 Semiconductor Energy Lab Co Ltd 光電変換半導体装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681981A (en) * 1979-09-21 1981-07-04 Messerschmitt Boelkow Blohm Semiconductor forming element for converting light to electric energy
JPS5799729A (en) * 1981-10-20 1982-06-21 Shunpei Yamazaki Manufacture of semi-amorphous semiconductor
JPS58116779A (ja) * 1981-12-29 1983-07-12 Sanyo Electric Co Ltd 光起電力装置
JPS58139478A (ja) * 1982-02-15 1983-08-18 Agency Of Ind Science & Technol アモルフアス太陽電池
JPS58171869A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681981A (en) * 1979-09-21 1981-07-04 Messerschmitt Boelkow Blohm Semiconductor forming element for converting light to electric energy
JPS5799729A (en) * 1981-10-20 1982-06-21 Shunpei Yamazaki Manufacture of semi-amorphous semiconductor
JPS58116779A (ja) * 1981-12-29 1983-07-12 Sanyo Electric Co Ltd 光起電力装置
JPS58139478A (ja) * 1982-02-15 1983-08-18 Agency Of Ind Science & Technol アモルフアス太陽電池
JPS58171869A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62142372A (ja) * 1985-12-17 1987-06-25 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS62142373A (ja) * 1985-12-17 1987-06-25 Semiconductor Energy Lab Co Ltd 光電変換半導体装置

Also Published As

Publication number Publication date
JPH0525186B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-04-12

Similar Documents

Publication Publication Date Title
US5627081A (en) Method for processing silicon solar cells
US4433202A (en) Thin film solar cell
EP0675551B1 (en) Solar cell and production process therefor
JP2001267611A (ja) 薄膜太陽電池及びその製造方法
JP2011181969A (ja) 太陽電池及び太陽電池の製造方法
US5575862A (en) Polycrystalline silicon photoelectric conversion device and process for its production
US4451838A (en) Semiconductor photoelectric conversion device
JP2001007381A (ja) 光電変換膜とその作製方法
US6503771B1 (en) Semiconductor photoelectrically sensitive device
JPH04130671A (ja) 光起電力装置
JPH0864851A (ja) 光起電力素子及びその製造方法
US7038238B1 (en) Semiconductor device having a non-single crystalline semiconductor layer
JPS60240168A (ja) 光電変換装置の作製方法
WO2018109878A1 (ja) 太陽電池および太陽電池の製造方法
JPS59175170A (ja) タンデム型太陽電池
JPH10226598A (ja) 透明導電性酸化チタン膜及びその製造方法
JP3346907B2 (ja) 太陽電池及びその製造方法
JPS60240167A (ja) 光電変換装置
US20080308144A1 (en) Integrated thin-layer photovoltaic module
Tsuo et al. High-flux solar furnace processing of silicon solar cells
JPH0525187B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3091882B2 (ja) 半導体装置及びその製造方法
JP2002217433A (ja) 半導体装置
JPH05206492A (ja) 光電変換装置
JP3067821B2 (ja) 太陽電池およびその製造方法