JPS60239046A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To eliminate the gap generating in molding resin by a method wherein a semiconductor chip is adhered to the surface of the island located in a lead frame, and when a number of leads are going to be connected thereto, a coupling agent layer having the parts reactive to both inorganic and organic substances in a molecule is coated on the surface of the chip side end part of a lead. CONSTITUTION:A semiconductor chip 3 is adhered to an island part 2 which con stitutes a lead frame, and the wiring electrode provided on the chip 3 is connected to each lead 4. According to this constitution, a coupling agent layer 5, having a part reactive to inorganic substance and another part reactive to organic part in a molecule, is applied to the surface and the side face of the chip 3 and the part between leads 4, and the surface of the chip is flattened. Subsequently, a molding resin layer 6 is coated on the whole surface, the surface of the lead 4 and the resin layer 6 are tightly fixed, and a gapless and highly dampproof device is obtained. A silane coupling agent, aluminum coupling agent and the like can be used as a coupling material.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device in which semiconductor electronic components such as ICs are mounted, and a method for manufacturing the same.

Generally, in a semiconductor device, a semiconductor chip is attached to the surface of an island, a plurality of leads are connected and attached to a frame, and a layer of molding resin such as plastic is formed on the surface of the island. The chip-side end of the lead is encapsulated with a molded resin layer.

However, in this semiconductor device, conventionally, the molding resin layer is in direct contact with the chip-side surface of the lead to encapsulate the end of the lead, so there is a small gap between the molding resin layer and the surface of the lead. There was a problem that occurred. In other words, since the lead itself is made of metal such as iron, its expansion coefficient is different from that of the molding resin, and the adhesion between the lead surface and the molding resin (2) is poor, resulting in a gap. Furthermore, since the frame side of the lead extends beyond the molding resin layer, a gap communicates with the outside, and there is a problem in that impurities such as moisture and ions enter through this gap, causing corrosion of the semiconductor chip. As described above, conventional semiconductor devices had incomplete moisture resistance and low reliability.

This invention was made in view of the above, and by forming a layer of a coupling agent that reacts with both metal and resin on the chip-side surface of the lead, the gap between the lead surface and the molding resin layer is improved. It is an object of the present invention to provide a semiconductor device and a method for manufacturing the same in which no gaps are formed between the semiconductor devices and the semiconductor device.

That is, in order to achieve the above-mentioned object, in the semiconductor device of the first invention, a semiconductor chip is attached to the surface of an island, a plurality of leads are connected to this semiconductor chip, and an inorganic substance is attached within one molecule. A coupling agent layer having both a part that is reactive to organic matter and a part that is highly reactive to organic matter is laminated (3) on at least the surface of the chip-side end of the lead, and A mold resin layer is formed so as to cover a part thereof through the coupling agent layer.

Further, in the method for manufacturing a semiconductor device according to the second invention, a semiconductor chip is die-bonded on the surface of an island, a plurality of leads are connected to this semiconductor chip by wire bonding, etc. A coupling agent having both a part highly reactive to inorganic substances and a part highly reactive to organic substances in its molecule is thinly applied to at least the chip-side end surface of the lead, and a coupling agent layer is laminated. After that, a molding resin layer is formed via a coupling agent layer to cover part of the semiconductor chip and leads.

Hereinafter, one embodiment of the present invention will be described in detail based on the drawings.

As shown in the drawings, 1 is a semiconductor device on which semiconductor electronic components such as ICs are mounted.

This semiconductor device 1 is composed of an island 2, a semiconductor chip (4), a lump 3, a plurality of glue parts 4, a coupling agent layer 5, and a mold resin layer 6.

The semiconductor chip 3 is attached approximately to the center of the surface (upper surface) of the island 2. Also, lead 4 is
One end is close to the semiconductor chip 3, and the other end is bent and extended to the lower side of the outside of the substrate 3.

Moreover, this lead 4 is made of a metal material such as iron,
Multiple pieces are installed in parallel.

The coupling agent layer 5 is laminated in the form of a thin film on the surface of the island 2, and is also formed over almost the entire surface of the island 2, on the surface of the semiconductor chip 3, and on the surface of the leads 4 on the chip side. This coupling agent layer 5 is composed of a coupling agent having in one molecule both a portion that is reactive toward inorganic substances and a portion that is highly reactive toward organic substances. As this coupling agent layer, for example, a silane coupling agent, an aluminum coupling agent, a titanate coupling agent, etc. are used.

The mold resin layer 6 is formed on the surface of the island 2 via the coupling agent layer 5, and is made of epoxy resin or the like. This mold resin layer 6
is adapted to encapsulate the semiconductor chip 3 and the lead 4 on the substrate 2 .

Therefore, in this semiconductor device 1, since the molding resin layer 6 is formed on the coupling agent layer 5, no gap is created between the surface of the lead 4 and the molding resin layer 6. In other words, the coupling agent N5 reacts with and adheres to both the surface of the inorganic metal lead 4 and the organic mold resin layer 6, thereby preventing the generation of gaps.

Next, a method for manufacturing this semiconductor device 1 will be explained.

First, the semiconductor chip 3 and a portion of the plurality of adhesive parts 4 are die-bonded and wire-bonded (not shown) to the surface of the island 2.

On the other hand, after diluting a coupling agent such as a silane type coupling agent with water, this coupling agent is thinly applied or sprayed onto the surface of the lead 4 to form a thin film-like coupling agent layer 5. This allows the semiconductor chip on island 2 to
A coupling agent layer 5 is formed on the (6) chip side surface of the /pu 3 and the lead 4.

Thereafter, the semiconductor chip 3 and the chip side ends of the leads 4 are molded using epoxy resin or the like.

In this manufacturing method, water is added to the coupling agent in order to promote the reaction with the mold resin layer 6 by causing hydrolysis. Note that the reaction can be further accelerated by heating. Further, the reason why the coupling agent N5 is made into a thin film shape is because if it is made into a thin film shape, the molecules will overlap and the bond between the molecules will become weak.

In this example, the coupling agent layer 5 is attached to the substrate 2.
Although it is formed on the entire surface of the lead 4, it may be formed on at least the chip side surface of the lead 4.

Alternatively, a semiconductor device may be used in which leads and a substrate are connected to a frame, and a semiconductor chip is attached to the substrate and molded.

As described above, according to the semiconductor device of the present invention, since a coupling agent layer that reacts with inorganic and organic substances is formed on the surface of the lead on the chip side, the surface of the lead and the molding resin layer are in close contact, and the gap is filled. Since the occurrence (7) can be reliably prevented, the intrusion of impurities such as moisture can be prevented, so moisture resistance can be improved, and the reliability of the equipment can be significantly improved. .

Moreover, according to the method for manufacturing a semiconductor device of the second invention, since the mold resin layer is formed after forming the coupling agent layer, the adhesion between both layers is good, and the generation of gaps can be prevented reliably. can do.

Moreover, since water is added to the coupling agent to cause a reaction involving hydrolysis, the reaction with the mold resin layer is significantly improved.

[Brief explanation of drawings]

The drawing shows one embodiment of the present invention, and is a partially sectional perspective view of a semiconductor device. DESCRIPTION OF SYMBOLS 1: Semiconductor device, 2: Island, 3: Semiconductor chip, 4: Lead, 5: Coupling agent layer, 6: Mold resin layer. Patent applicant: ROHM Co., Ltd. Agent: Patent attorney: Shigeru Nakamura (8)

Claims (2)

[Claims] (1) A semiconductor chip is attached to the surface of the island,
While multiple leads are connected to this semiconductor chip,
A coupling agent layer having both a part highly reactive to inorganic substances and a part highly reactive to organic substances in one molecule is laminated on at least the chip-side end surface of the lead, and the semiconductor chip and 1. A semiconductor device, wherein a mold resin layer is formed to cover a portion of the lead via the coupling agent layer. (2) A semiconductor chip is die-bonded to the surface of the island, and multiple leads are connected to this semiconductor chip, while a part reactive to inorganic substances and a part reactive to organic substances are added to each molecule diluted with water. A coupling agent having a highly reactive portion with respect to the semiconductor chip is applied to at least the chip-side end surface of the lead, a coupling agent layer is laminated, and (1) after that, the semiconductor chip and the lead are bonded together. 1. A method for manufacturing a semiconductor device, comprising forming a mold resin layer covering the entire surface of the semiconductor device with a coupling agent layer interposed therebetween.