JPS60238079A - アルミニウム極細線の製造方法 - Google Patents

アルミニウム極細線の製造方法

Info

Publication number
JPS60238079A
JPS60238079A JP59092994A JP9299484A JPS60238079A JP S60238079 A JPS60238079 A JP S60238079A JP 59092994 A JP59092994 A JP 59092994A JP 9299484 A JP9299484 A JP 9299484A JP S60238079 A JPS60238079 A JP S60238079A
Authority
JP
Japan
Prior art keywords
wire
diameter
tensile strength
aluminum
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59092994A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0330462B2 (enrdf_load_stackoverflow
Inventor
Yutaka Kusano
裕 草野
Shuichiro Watanabe
渡辺 修一郎
Toshio Umeda
利男 梅田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Light Metal Co Ltd
Original Assignee
Nippon Light Metal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Light Metal Co Ltd filed Critical Nippon Light Metal Co Ltd
Priority to JP59092994A priority Critical patent/JPS60238079A/ja
Publication of JPS60238079A publication Critical patent/JPS60238079A/ja
Publication of JPH0330462B2 publication Critical patent/JPH0330462B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20753Diameter ranges larger or equal to 30 microns less than 40 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal Extraction Processes (AREA)
  • Wire Bonding (AREA)
JP59092994A 1984-05-11 1984-05-11 アルミニウム極細線の製造方法 Granted JPS60238079A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59092994A JPS60238079A (ja) 1984-05-11 1984-05-11 アルミニウム極細線の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59092994A JPS60238079A (ja) 1984-05-11 1984-05-11 アルミニウム極細線の製造方法

Publications (2)

Publication Number Publication Date
JPS60238079A true JPS60238079A (ja) 1985-11-26
JPH0330462B2 JPH0330462B2 (enrdf_load_stackoverflow) 1991-04-30

Family

ID=14069918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59092994A Granted JPS60238079A (ja) 1984-05-11 1984-05-11 アルミニウム極細線の製造方法

Country Status (1)

Country Link
JP (1) JPS60238079A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62170448A (ja) * 1986-01-23 1987-07-27 Nippon Light Metal Co Ltd アルミニウム極細線
JPH01221585A (ja) * 1988-02-29 1989-09-05 Kobe Steel Ltd ミニロープ
CN102682921A (zh) * 2012-05-14 2012-09-19 广西平果博导铝镁线缆有限公司 一种铝镁合金连续双级退火方法
WO2013180300A1 (ja) * 2012-05-29 2013-12-05 国立大学法人茨城大学 パワー半導体用アルミニウムワイヤ及び該アルミニウムワイヤを用いた半導体装置、並びに該アルミニウムワイヤの探索方法
CN112251691A (zh) * 2020-10-30 2021-01-22 郑州轻研合金科技有限公司 一种5a90铝锂合金超细晶板材的制备方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62170448A (ja) * 1986-01-23 1987-07-27 Nippon Light Metal Co Ltd アルミニウム極細線
JPH01221585A (ja) * 1988-02-29 1989-09-05 Kobe Steel Ltd ミニロープ
CN102682921A (zh) * 2012-05-14 2012-09-19 广西平果博导铝镁线缆有限公司 一种铝镁合金连续双级退火方法
WO2013180300A1 (ja) * 2012-05-29 2013-12-05 国立大学法人茨城大学 パワー半導体用アルミニウムワイヤ及び該アルミニウムワイヤを用いた半導体装置、並びに該アルミニウムワイヤの探索方法
JPWO2013180300A1 (ja) * 2012-05-29 2016-01-21 国立大学法人茨城大学 パワー半導体用アルミニウムワイヤ及び該アルミニウムワイヤを用いた半導体装置、並びに該アルミニウムワイヤの探索方法
CN112251691A (zh) * 2020-10-30 2021-01-22 郑州轻研合金科技有限公司 一种5a90铝锂合金超细晶板材的制备方法

Also Published As

Publication number Publication date
JPH0330462B2 (enrdf_load_stackoverflow) 1991-04-30

Similar Documents

Publication Publication Date Title
JP5975493B2 (ja) 銅合金線材の製造方法
DE112010004176T5 (de) Aluminiumlegierungsdraht
CN104616715A (zh) 铝合金线
JPWO2014155819A1 (ja) アルミニウム合金線材、アルミニウム合金撚線、被覆電線、ワイヤーハーネスおよびアルミニウム合金線材の製造方法
JPS58213840A (ja) 半固体半液体状態の形成に適した金属組成物の製造方法
WO2018079047A1 (ja) アルミニウム合金線、アルミニウム合金撚線、被覆電線、及び端子付き電線
US3964935A (en) Aluminum-cerium-iron electrical conductor and method for making same
JP3367544B2 (ja) ボンディング用金合金細線及びその製造方法
JPS60238079A (ja) アルミニウム極細線の製造方法
CN102637485B (zh) 铝合金线及其制备方法
US4216031A (en) Aluminum nickel base alloy electrical conductor and method therefor
JPH0211013B2 (enrdf_load_stackoverflow)
JP2010163677A (ja) アルミニウム合金線材
JPS59139663A (ja) 半導体装置のワイヤ・ボンデイング用Cu合金細線
KR101252784B1 (ko) 고강도 고성형성 마그네슘 합금 판재 및 그 제조방법
JPH049253A (ja) 銅合金の製造方法
JPH0480981B2 (enrdf_load_stackoverflow)
JPS6112011B2 (enrdf_load_stackoverflow)
JPH0480982B2 (enrdf_load_stackoverflow)
JPH0418025B2 (enrdf_load_stackoverflow)
US3600239A (en) Method of using and for fabricating lutrasonic bonding grade aluminum wire and resulting product
JPS63243252A (ja) 導電用高力アルミニウム合金導体の製造方法
JPS62170448A (ja) アルミニウム極細線
JPH0418026B2 (enrdf_load_stackoverflow)
JP4349631B2 (ja) 電機、電子機器部品用コルソン合金細線の製造方法