JPS60236252A - Bonding fine wire for semiconductor - Google Patents

Bonding fine wire for semiconductor

Info

Publication number
JPS60236252A
JPS60236252A JP59093195A JP9319584A JPS60236252A JP S60236252 A JPS60236252 A JP S60236252A JP 59093195 A JP59093195 A JP 59093195A JP 9319584 A JP9319584 A JP 9319584A JP S60236252 A JPS60236252 A JP S60236252A
Authority
JP
Japan
Prior art keywords
wire
bonding
surface layer
coated
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59093195A
Other languages
Japanese (ja)
Inventor
Shoji Shiga
志賀　章二
Toru Tanigawa
徹 谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP59093195A priority Critical patent/JPS60236252A/en
Publication of JPS60236252A publication Critical patent/JPS60236252A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45618—Zinc (Zn) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
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    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain bonding fine wirings having excellent corrosion resistance and waterproofness by forming a Zn-containing layer on the surface layer of Au, Pd or Al or their alloy wire. CONSTITUTION:Zn is coated on the surface of Al, Au, Pd or their alloy wire by plating, depositing or sputtering. After Zn is coated by an arbitrary method on a thick wire as a method having high productivity, the wire is elongated to the final diameter. In this case, since Zn is diffused and alloyed by machining heat, the quality is frequently excellent. Corrosion preventive effect can be effectively performed with 0.7wt% or higher of Zn and particularly low density of 1-4%, thereby eliminating the influence to a bonding such as alloying or diffusion defect by the heat at the bonding time.

Description

【発明の詳細な説明】 本発明は生導体用ゲンディング細線の改良に関するもの
であり、特に耐食性、１１水密性に優れたビンディング
＃ＩＩ線を得んさするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the improvement of a thin gendering wire for a live conductor, and particularly to the production of a binding #II wire having excellent corrosion resistance and 11 watertightness.

ＩＣ（集積回路）、ＨＩＣ（バイブ！ＩッドＩＣ）。IC (integrated circuit), HIC (vibe! IC).

トランジスターなどの牛導体ではＳｉチッゾなどの中導
体素子十に形成された電極とリードフレームの基板リー
ドとの間の電気接続を行う目的で１５〜６０μφ位のＡ
ｕ線やＡｔ−８Ｉ合金線が使用されている。これらの線
は熱融着法、超音波熱圧着法、超音波溶接法などにより
高生産性でビンディングされている。このＡｕ線は大気
中で高速ぎンディングできると共に耐食性に優れてるの
で主流をなしているが、高価であると共に水密性に劣る
欠点を有する。又Ａｕ線の機械的特性を向上せしめるた
めにけｐｐｍオーダーのＳｎ。In the case of conductors such as transistors, A of about 15 to 60 μΦ is used for the purpose of electrical connection between the electrodes formed on medium conductor elements such as Si chips and the board leads of the lead frame.
U-wire and At-8I alloy wire are used. These wires are bound with high productivity by heat fusion bonding, ultrasonic thermocompression bonding, ultrasonic welding, and the like. This Au wire is mainstream because it can be bonded at high speed in the atmosphere and has excellent corrosion resistance, but it has the drawbacks of being expensive and having poor watertightness. Also, in order to improve the mechanical properties of the Au wire, Sn is added in a ppm order.

Ｓｅ　、Ｍｎ　、Ｔｅ　、Ｈｆ　、Ｍｇ　、Ｎｉ　、Ｃ
ｏ　、Ｔｅ等を含有せしめる希薄合金化が行われている
が、生導体の小型高集積化が進み、他方コストダウンの
点からセラミックに代ってレジンモールドによる封止が
大勢を占める現状においては水密性の問題が大きくクロ
ーズアップされている。即ちレジンモールドの場合工ｄ
？キシ樹脂と金属との熱膨摂係数に大きな差異があるた
めこの両者の界面の接着力が不十分な場合に微細な間隙
を生じ、これが水分々どの透過路となるものであ−）た
。又貴金属のＡｕはエポキシと化学的ガ結合を行うこと
が出来ず特に接合力に乏しいのでリードフレームとレジ
ンとの界面やレジンバルクを透過した水分１ｔＡｕのボ
ンディング線を通路にしてＳｔチップに到達しＳｉチッ
プ上のＡｔ配線の腐食劣化などをひきおこすものであっ
た。Se, Mn, Te, Hf, Mg, Ni, C
Although diluted alloys containing O, Te, etc. are being used, the current situation is that live conductors are becoming smaller and more highly integrated, and on the other hand, sealing with resin molds is now popular in place of ceramics in order to reduce costs. The issue of watertightness is receiving a lot of attention. In other words, in the case of a resin mold, the process d
? Since there is a large difference in the coefficient of thermal expansion between the resin and the metal, if the adhesion between the two is insufficient, fine gaps are created, which serve as passageways for water and water to pass through. In addition, since the noble metal Au cannot chemically bond with epoxy and has particularly poor bonding strength, the bonding wire of 1 tAu of water that has passed through the interface between the lead frame and the resin and the resin bulk is used as a path to reach the St chip. This caused corrosion and deterioration of the At wiring on the Si chip.

他方ｋｌやｋｌ−Ｓ　ｉ　、　Ａ　ｔ−Ｍｇ等の線は安
価でろり強度や電気特性に優れているため高速メンディ
ングの可能な雰囲気熱圧着法なども開発されている。し
かしレジンモールド牛導体に本格的々応用を進める上で
の最大な欠点は、上記の如く不可避的な透過水分による
腐食断線である。特にレジン等に微細含有をされるＣｔ
−分等により加速されるといわれている。On the other hand, since wires such as kl, kl-S i and At-Mg are inexpensive and have excellent welding strength and electrical properties, atmospheric thermocompression bonding methods that enable high-speed mending have also been developed. However, the biggest drawback in the full-scale application of resin molded conductors is the corrosion and breakage caused by the inevitable permeation of moisture as described above. In particular, Ct contained in minute amounts in resin etc.
It is said that the speed is accelerated by - minutes, etc.

本発明はかかる現状に鑑み鋭意研究を行った結果特にレ
ジンモールド牛導体の信頼性を改善しうるビンディング
細線を提供せんとするものである。即ち本発明は少くと
もＺｎ分を０．７　ｗｔ％以上の表層を有するＡｕ、Ｐ
ｄ、Ａｊ又はこれらの合金線からなることを特徴とする
ものである。The present invention has been made as a result of extensive research in view of the current situation, and is intended to provide a fine binding wire that can improve the reliability of resin-molded conductors. That is, the present invention is directed to Au, P having a surface layer containing at least 0.7 wt% of Zn.
d, Aj, or an alloy wire thereof.

本発明において表層にＺｎ分を設ける理由は、Ｚｎ分は
レジンとの化学的結合の触媒的作用を有し接着力を高度
にあげることが出来る。これは細線製造工程中や保管期
間中、更にボンディングやモールディングの高温条件に
おいて表層のＺｎ分が優先的に酸化するためと推考され
る。従って表層の厚さは分子オーダで十分であシ通常１
００〜５００ｘ程度でよい。The reason why the Zn component is provided on the surface layer in the present invention is that the Zn component has a catalytic effect on chemical bonding with the resin and can highly increase the adhesive force. This is thought to be because the Zn content in the surface layer is preferentially oxidized during the thin wire manufacturing process, during storage, and under high-temperature conditions during bonding and molding. Therefore, the thickness of the surface layer is sufficient to be on the order of molecules, and usually 1
It may be about 00 to 500x.

又Ａｔ線におけるＺｎ含有層の付加的効能は耐食性の向
上である。ＺｎやＺｎ　−ｋ１合金はＡｔに比べて卑で
あシ犠牲陽極的に働くため水分やＣｔ−分が存在しても
腐食断線に至るまでの深さ方向の腐食は大巾に阻止する
ことができる。この場合も前記の如く薄層で十分にその
目的を達成することが出来うるが表層のＺｎ濃度につい
ては５μ程度まで使用される。An additional benefit of the Zn-containing layer in the At wire is improved corrosion resistance. Zn and Zn-k1 alloys are less base than At and act as sacrificial anodes, so even in the presence of moisture or Ct-components, corrosion in the depth direction up to corrosion breakage cannot be significantly prevented. can. In this case as well, as mentioned above, the purpose can be sufficiently achieved with a thin layer, but the Zn concentration in the surface layer is about 5 μm.

而してボンディング線の防食効果はＺｎ分が０、７　ｗ
ｔ％以上特に１〜４チ位の低濃度において有効に発揮で
きうるためボンディング部への影響例えばボンディング
時の熱による合金化や拡散障害の心配は全くない。この
ようにＺｎ含有表層は１００％のＺｎよシもむしろＡｔ
、Ａｕ、Ｐｄ等の基材との合金の方が実用上有効なので
ある。即ち１００％Ｚｎでは使用前の保管中に腐食のト
ラブルをおこして品質のバラツキも生じやすく且つ合金
化によりＺｎの所要量が少くてよいため上記のビンディ
ング障害の危険性も少い。Therefore, the anticorrosion effect of the bonding wire is that the Zn content is 0.7w.
Since it can be effectively exerted at a low concentration of 1 to 4% or more, there is no concern about effects on the bonding part, such as alloying or diffusion problems due to heat during bonding. In this way, the Zn-containing surface layer is not 100% Zn, but rather At.
An alloy with a base material such as , Au, or Pd is more effective in practice. That is, 100% Zn tends to cause corrosion problems during storage before use, resulting in quality variations, and because alloying requires less Zn, there is less risk of the above-mentioned binding failure.

本発明のボンディング線は最後上りの線にメッキ、蒸僧
、スパッタリングなどにより表面にＺｎを被覆すること
が出来るが、よ妙生産性の高い方法としては太線の中に
任意の方法でＺｎを被覆した後、屯終径に伸線すること
である。この場合加工発熱によりＺｎ分は拡散合金化す
るので品質上も優れている場合が多い。The bonding wire of the present invention can be coated with Zn on the surface of the last wire by plating, steaming, sputtering, etc., but a method with higher productivity is to coat the thick wire with Zn by any method. After that, the wire is drawn to the final diameter of the tun. In this case, the Zn content is diffused and alloyed due to the heat generated during processing, so the quality is often excellent.

なお本発明ビンディング線はＡ／＝、Ａｕ　、Ｐｄ　、
及びこれらの合金線であり、合金としてはＡｕ　−Ａｇ
　。The binding wire of the present invention has A/=, Au, Pd,
and these alloy wires, and the alloy is Au-Ag
.

Ａｕ　−Ｐｄ　、　Ｐｄ　−Ａｇ　、　Ｐｄ−Ｎｉ　、
　Ｐｄ　−Ｃｕ等があけられる。Au-Pd, Pd-Ag, Pd-Ni,
Pd-Cu etc. can be opened.

次に本発明の実施例について説明する。Next, examples of the present invention will be described.

実施例（１） ０２φＡｕ線に下記浴を用いて０．０４μのＺｎをメン
キした。Example (1) A 0.04μ Zn coating was applied to a 02φ Au wire using the following bath.

ｚｎ（ｃＮ）２５０　ｇ／ｌ！ ＫＣＮ　３５　＃ ＫＯＨ７Ｑ　ｔｔ 液温　２ｏ℃ 電流密度　Ｉ　Ａｊｄｍ２ このメッキ線を００２５φ１で連続伸線を行ったところ
外観上Ｚｎの白色は消失していた。ＡＥＳ法により表面
分析を行ったところ表層は約２チのＺｎであった。zn(cN)250 g/l! KCN 35 # KOH7Q tt Liquid temperature 2oC Current density I Ajdm2 When this plated wire was continuously drawn at 0025φ1, the white color of Zn had disappeared from the appearance. Surface analysis by AES method revealed that the surface layer was about 2 inches of Zn.

実施例（２） ０．２φのＰｄ線に実施例（１）と同様にして００４μ
のＺｎをメッキした。このメッキ線を００２５φまで伸
線を行った。ＡＥＳ法により表面層の分析を行ったとこ
ろＺｎ分は３０％であった。Example (2) A 0.2φ Pd wire was coated with 004μ in the same manner as Example (1).
It was plated with Zn. This plated wire was drawn to 0025φ. When the surface layer was analyzed by AES method, the Zn content was 30%.

実施例（３） ０．５φのＡｕ線に実施例（１）と同様にしてＺｎを０
．０２μメツキを行い、０．０２５φ捷で伸線した。Example (3) Zn was added to 0.5φ Au wire in the same manner as Example (1).
．． 0.02μ plating was performed, and the wire was drawn using a 0.025φ wire.

表層のＺｎ分は１５チであった。The Zn content of the surface layer was 15.

実施例（４） 実施例（３）においてＺｎのメッキ厚を０．０１％とし
、これを００２５φまで伸線した。表層のＺｎは０．８
％であった。Example (4) In Example (3), the Zn plating thickness was set to 0.01%, and the wire was drawn to 0025φ. Surface layer Zn is 0.8
%Met.

比較例１ 実施例（４）において素線径を０．６５φとしてこれに
メッキを行い伸線したところ、表層のＺｎ分は０．４％
であった。Comparative Example 1 In Example (4), when the wire diameter was set to 0.65φ and the wire was plated and drawn, the Zn content in the surface layer was 0.4%.
Met.

実施例（５） ０．３５φのＡｔ−１％Ｓｉ線に下記浴を用いて、Ｚｎ
の置換メッキを行った。Example (5) Using the following bath for a 0.35φ At-1%Si wire, Zn
Replacement plating was performed.

ＮａＯＨ５２５９ Ｚｎ０　２００　ｇ 液温　２０℃ ＺｎＯ附着量は０．０２％であった。この線を４９０℃
にて不活性雰囲気中に１分間通過せしめた後伸線を行い
０．０２５φに仕上げた。ＡＥＳ法により表層の分析を
行ったところＺｎ分は１２％であった。NaOH5259 Zn0 200 g Liquid temperature 20°C ZnO adhesion amount was 0.02%. This line is 490℃
After passing through an inert atmosphere for 1 minute, the wire was drawn to a diameter of 0.025φ. When the surface layer was analyzed by AES method, the Zn content was 12%.

実施例（６） 実施例（５）にお）て素線径を０．３０φとし加熱温度
を４００℃としてＺｎメッキを行い、０．０２５φまで
伸線したところ表層のＺｎ分は５チであった。Example (6) In Example (5), the wire diameter was 0.30φ, the heating temperature was 400°C, Zn plating was carried out, and when the wire was drawn to 0.025φ, the Zn content in the surface layer was 5 cm. Ta.

以上の線のほかに比較例として０．０２５φのＡｕ線、
Ｐｄ＠、Ａ／＝−８ｌ線を用いて１６ピンのＤＩＰ型Ｉ
Ｃを製造した。In addition to the above wires, as a comparative example, 0.025φ Au wire,
16-pin DIP type I using Pd@, A/=-8l wire
C was produced.

リードフレームはＣｕ　−２，４Ｆｅ　−Ｐ合金線（０
，２５ｔ）にて作シタブとインナーリード部をＡｇメッ
キ（５μ）とした。ただしＡｔ線の場合は光沢Ｎ１メッ
キ（２，０μ）とした。ＳｔチップとＡｇ−エポキシペ
ーストを用いてダイ駆゛斗ドした後Ａｕ　、　Ｐｄ線は
２１０℃にて大気中で超音波熱圧着ボンディングした。The lead frame is made of Cu-2,4Fe-P alloy wire (0
, 25t), and the tab and inner lead portion were plated with Ag (5μ). However, in the case of At wire, bright N1 plating (2.0μ) was used. After die driving using St chips and Ag-epoxy paste, Au and Pd wires were bonded by ultrasonic thermocompression in the air at 210°C.

（ゲンディング荷重５０　ｇｒ　）又Ａ／＝線は超音波
ウェッジデンディング（荷重３０ｇ、出力０．０５ＷＸ
　６０　ｋｌ（ｚ　）　Ｌ。(Gending load 50 gr) Also, A/= line is ultrasonic wedge bending (load 30 g, output 0.05 WX
60 kl(z) L.

た。次いでエポキシレジンモールドを行いダイ１１１−
カットしてｒｃとした。Ta. Next, epoxy resin molding is performed and die 111-
I cut it and made it into rc.

本発明品及び比較例品についても夫々１２０℃、９０％
ＲＨのブレラシャークツカ−１５０Ｈｒ。120℃ and 90% for the inventive product and comparative example product, respectively.
RH Brera Shark Tsuka-150Hr.

２０００Ｈｒ保持した後ぎンディングワイヤの結合状態
を電気測定した。その結果は第１表に示す通りである。After holding for 2000 hours, the bonding state of the binding wire was electrically measured. The results are shown in Table 1.

第　１　表 上表から明らかの如く本発明においてはすべて耐湿性、
耐食性が著しく改善された。特に従来Ａｔ線では１５０
　Ｈｒの短時間でも大量の断線故障を生ずるのに対し本
発明においては２０００Ｈｒ経過後も軽微にとどまって
いる。Ａｕ線についてもＡｔ＠程ではないが改善は明ら
かである。As is clear from Table 1 above, in the present invention, all moisture resistance,
Corrosion resistance was significantly improved. In particular, the conventional At line is 150
Although a large number of disconnection failures occur even in a short time of 2000 hours, in the present invention, the number of disconnection failures remains slight even after 2000 hours have elapsed. The improvement with respect to Au wire is also clear, although not as much as with At@.

以上詳述した如く本発明によれば小型、高密化されるレ
ジンモールドが好んで使用される生導体工業において透
過水分による電気的障害を大巾に改善しうる等顕著な効
果を有する。As described in detail above, the present invention has remarkable effects such as being able to greatly improve electrical problems caused by permeated moisture in the raw conductor industry where small and highly dense resin molds are preferred.

Claims (1)

【特許請求の範囲】[Claims] 少くともＺｎ分を０．７ｗｔ％以上の表層を有するＡｕ
、Ｐｄ、Ａｔ又はこれらの合金線からなることを特徴と
する手導体用ボンディング細線。Au having a surface layer containing at least 0.7 wt% of Zn
, Pd, At, or an alloy wire thereof.
JP59093195A 1984-05-10 1984-05-10 Bonding fine wire for semiconductor Pending JPS60236252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59093195A JPS60236252A (en) 1984-05-10 1984-05-10 Bonding fine wire for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59093195A JPS60236252A (en) 1984-05-10 1984-05-10 Bonding fine wire for semiconductor

Publications (1)

Publication Number Publication Date
JPS60236252A true JPS60236252A (en) 1985-11-25

Family

ID=14075795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59093195A Pending JPS60236252A (en) 1984-05-10 1984-05-10 Bonding fine wire for semiconductor

Country Status (1)

Country Link
JP (1) JPS60236252A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0792517A4 (en) * 1994-11-15 1998-06-24 Formfactor Inc Electrical contact structures from flexible wire
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6778406B2 (en) 1993-11-16 2004-08-17 Formfactor, Inc. Resilient contact structures for interconnecting electronic devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6778406B2 (en) 1993-11-16 2004-08-17 Formfactor, Inc. Resilient contact structures for interconnecting electronic devices
US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
EP0792517A4 (en) * 1994-11-15 1998-06-24 Formfactor Inc Electrical contact structures from flexible wire
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures

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