JPH10242205A - Wire bonding terminal and manufacture thereof - Google Patents
Wire bonding terminal and manufacture thereofInfo
- Publication number
- JPH10242205A JPH10242205A JP9047696A JP4769697A JPH10242205A JP H10242205 A JPH10242205 A JP H10242205A JP 9047696 A JP9047696 A JP 9047696A JP 4769697 A JP4769697 A JP 4769697A JP H10242205 A JPH10242205 A JP H10242205A
- Authority
- JP
- Japan
- Prior art keywords
- electroless
- plating
- minutes
- room temperature
- plating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
- H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
- H01L2224/10125—Reinforcing structures
- H01L2224/10126—Bump collar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はワイヤボンディング
端子とその形成方法に関する。The present invention relates to a wire bonding terminal and a method for forming the same.
【０００２】[0002]
【従来の技術】セラミック配線板は、近年高密度化が進
んでおり、配線板に直接半導体チップを実装するＣＯ
Ｂ、ＭＣＭ等の需要が伸びている。これらのチップ実装
基板とチップの接続方法は、主にワイヤボンディングで
ある。実装基板側のワイヤボンディング接続部は、ワイ
ヤボンディング端子である。この端子の従来の構造は、
基板上に形成したタングステン又はモリブデン端子上に
ニッケル、金の皮膜を順次形成したものであり、このワ
イヤボンディング端子の形成方法には、無電解ニッケル
めっき、置換金めっきのめっき皮膜を順次形成する方法
と、無電解ニッケルめっき、置換金めっき、無電解金め
っきのめっき皮膜を順次形成する方法とがある。2. Description of the Related Art The density of ceramic wiring boards has been increasing in recent years.
Demand for B, MCM, etc. is growing. The method of connecting the chip mounting board and the chip is mainly wire bonding. The wire bonding connection part on the mounting board side is a wire bonding terminal. The conventional structure of this terminal is
A film of nickel and gold is sequentially formed on a tungsten or molybdenum terminal formed on a substrate. The method of forming this wire bonding terminal includes a method of sequentially forming a plating film of electroless nickel plating and displacement gold plating. And a method of sequentially forming a plating film of electroless nickel plating, displacement gold plating, and electroless gold plating.
【０００３】通常、半導体チップ実装基板のワイヤボン
ディング端子を形成した後、半導体チップを基板に接着
剤を用いて接着する。このときの接着に要する熱処理条
件は、１５０〜２５０℃、３０〜１８０分の範囲であ
る。この後に、ワイヤボンディングを行う。Usually, after forming the wire bonding terminals of the semiconductor chip mounting substrate, the semiconductor chip is bonded to the substrate using an adhesive. The heat treatment conditions required for bonding at this time are in the range of 150 to 250 ° C. and 30 to 180 minutes. Thereafter, wire bonding is performed.
【０００４】[0004]
【発明が解決しようとする課題】従来の、タングステン
又はモリブデン端子上にニッケル、金の皮膜を順次形成
したワイヤボンディング端子は、熱処理なし、又は低温
度、短時間の熱処理でワイヤボンディングを行った場合
には良好な結果が得られるものである。しかし、熱処理
条件が厳しくなると、ワイヤボンディングの際のワイヤ
が端子に付着しないという課題がある。A conventional wire bonding terminal in which nickel and gold films are sequentially formed on a tungsten or molybdenum terminal has no heat treatment or a low temperature, short time heat treatment. Have good results. However, when the heat treatment conditions become severe, there is a problem that the wires do not adhere to the terminals during wire bonding.
【０００５】本発明は、厳しい熱処理条件の下でも接続
の良好なワイヤボンディングのできる端子とその形成方
法を提供することを目的とする。An object of the present invention is to provide a terminal capable of performing wire bonding with good connection even under severe heat treatment conditions and a method of forming the terminal.
【０００６】[0006]
【課題を解決するための手段】本発明のワイヤボンディ
ング端子は、タングステン又はモリブデンからなる端子
上に、無電解ニッケルめっき皮膜、置換パラジウムめっ
き皮膜又は無電解パラジウムめっき皮膜、置換金めっき
皮膜、無電解金めっき皮膜がその順に形成されたことを
特微とする。A wire bonding terminal according to the present invention comprises an electroless nickel plating film, a substituted palladium plating film or an electroless palladium plating film, a substituted gold plating film, an electroless plating film on a terminal made of tungsten or molybdenum. The feature is that the gold plating films are formed in that order.
【０００７】本発明のワイヤボンディング端子の形成方
法は、タングステン又はモリブデンからなる端子上に、
無電解ニッケルめっき、無電解パラジウムめっき又は置
換パラジウムめっき、置換金めっき、無電解金めっきの
めっき皮膜をその順に形成することを特微とする。The method for forming a wire bonding terminal according to the present invention comprises the steps of:
The feature is to form a plating film of electroless nickel plating, electroless palladium plating or displacement palladium plating, displacement gold plating, and electroless gold plating in that order.
【０００８】[0008]
【発明の実施の形態】置換パラジウムめっき皮膜又は無
電解パラジウムめっき皮膜の膜厚は、０．１μｍ以上で
あることが好ましい。０．１μｍ未満であると、熱処理
後のワイヤボンディングが付着しない場合がある。同様
に置換金めっき皮膜と無電解金めっき皮膜の膜厚の和
は、０．０４μｍ以上であることが好ましい。０．０４
μｍ未満であると、ワイヤーボンディングが付着しない
場合がある。DESCRIPTION OF THE PREFERRED EMBODIMENTS The thickness of a substituted palladium plating film or an electroless palladium plating film is preferably 0.1 μm or more. When the thickness is less than 0.1 μm, wire bonding after heat treatment may not be attached. Similarly, the sum of the thicknesses of the replacement gold plating film and the electroless gold plating film is preferably 0.04 μm or more. 0.04
If it is less than μm, wire bonding may not be attached.
【０００９】無電解ニッケルめっきは、めっき液中のニ
ッケルイオンがニッケルイオンの還元剤の働きによっ
て、タングステン又はモリブデンの活性化した表面にニ
ッケルを析出させるものであればよく、特に限定しな
い。また、置換パラジウムめっきは、下地のニッケルと
めっき液中のパラジウムイオンの置換反応によって、ニ
ッケル表面にパラジウム皮膜を形成するものであればよ
く、特に限定しない。また、無電解パラジウムめっき
は、めっき液中のパラジウムイオンの還元剤の働きによ
って、ニッケル表面にパラジウムを析出させるものであ
ればよく、特に限定しない。The electroless nickel plating is not particularly limited as long as the nickel ions in the plating solution precipitate nickel on the activated surface of tungsten or molybdenum by the action of the nickel ion reducing agent. Further, the displacement palladium plating is not particularly limited as long as it forms a palladium film on the nickel surface by a substitution reaction between the underlying nickel and palladium ions in the plating solution. The electroless palladium plating is not particularly limited as long as it causes palladium to precipitate on the nickel surface by the action of a reducing agent for palladium ions in the plating solution.
【００１０】置換金めっきは、下地のパラジウムと溶液
中の金イオンとの置換反応によって、パラジウム表面に
金皮膜を形成するものであり、無電解金めっきは、めっ
き液中の金イオンが金イオンの還元剤の働きによって、
金表面に金を析出させるものであればよく、特に限定し
ない。基材の種類はセラミックが最も良好な結果を与え
るが、半導体、樹脂基板等の基板でも良い。In displacement gold plating, a gold film is formed on the surface of palladium by a substitution reaction between base palladium and gold ions in a solution. In electroless gold plating, gold ions in a plating solution are converted to gold ions. By the action of the reducing agent
What is necessary is just to deposit gold on the gold surface, and there is no particular limitation. As the type of the base material, ceramic gives the best result, but a substrate such as a semiconductor or a resin substrate may be used.
【００１１】[0011]
実施例１ 導体で回路形成したセラミック基板上のタングステン端
子と、導体で回路形成したセラミック基板上のモリブデ
ン端子上に、以下の処理を行う。 (1)脱脂 ・組成：Z-200（株式会社ワ−ルドメタル社製、商品
名） ・条件：５０℃、１分 (2)水洗（２分、室温） (3)酸洗 ・組成：１０重量％硫酸 ・条件：室温、１分 (4)水洗（２分、室温） (5)活性化 ・組成：SA-100（日立化成工業株式会社製、商品名） ・条件：室温、５分 (6)水洗（２分、室温） (7)無電解ニッケルめっき ・組成：NIPS-100（日立化成工業株式会社製、商品名） ・条件：８５℃、２０分 (8)水洗（２分、室温） (9)無電解パラジウムめっき ・組成：APP（石原薬品株式会社製、商品名） ・条件：５０℃、２０分 (10)水洗（２分、室温） (11)置換金めっき ・組成：HGS-100（日立化成工業株式会社製、商品名） ・条件：８５℃、１０分 (12)水洗（２分、室温） (13)無電解金めっき ・組成：HGS-2000（日立化成工業株式会社製、商品名） ・条件：６５℃、４０分Example 1 The following process is performed on a tungsten terminal on a ceramic substrate formed with a conductor and a molybdenum terminal on a ceramic substrate formed with a circuit. (1) Degreasing ・ Composition: Z-200 (manufactured by World Metal Co., Ltd., trade name) ・ Condition: 50 ° C, 1 minute (2) Washing with water (2 minutes, room temperature) (3) Pickling ・ Composition: 10 weight % Sulfuric acid ・ Condition: room temperature, 1 minute (4) Rinse with water (2 minutes, room temperature) (5) Activation ・ Composition: SA-100 (manufactured by Hitachi Chemical Co., Ltd., trade name) ・ Condition: room temperature, 5 minutes (6 ) Rinse with water (2 minutes, room temperature) (7) Electroless nickel plating ・ Composition: NIPS-100 (trade name, manufactured by Hitachi Chemical Co., Ltd.) ・ Condition: 85 ° C, 20 minutes (8) Rinse with water (2 minutes, room temperature) (9) Electroless palladium plating ・ Composition: APP (trade name, manufactured by Ishihara Chemical Co., Ltd.) ・ Condition: 50 ° C., 20 minutes (10) Rinse with water (2 minutes, room temperature) (11) Replacement gold plating ・ Composition: HGS- 100 (manufactured by Hitachi Chemical Co., Ltd.) • Condition: 85 ° C, 10 minutes (12) Rinse (2 minutes, room temperature) (13) Electroless gold plating • Composition: HGS-2000 (manufactured by Hitachi Chemical Co., Ltd.) , Product name) ・ Conditions: 6 5 ° C, 40 minutes
【００１２】実施例２ 導体で回路形成したセラミック基板上のタングステン端
子と、導体で回路形成したセラミック基板上のモリブデ
ン端子上に、以下の処理を行う。 (1)脱脂 ・組成：Z-200（株式会社ワ−ルドメタル社製、商品
名） ・条件：５０℃、１分 (2)水洗（２分、室温） (3)酸洗 ・組成：１０重量％硫酸 ・条件：室温、１分 (4)水洗（２分、室温） (5)活性化 ・組成：SA-100（日立化成工業株式会社製、商品名） ・条件：室温、５分 (6)水洗（２分、室温） (7)無電解ニッケルめっき ・組成：NIPS-100（日立化成工業株式会社製、商品名） ・条件：８５℃、２０分 (8)水洗（２分、室温） (9)置換パラジウムめっき ・組成：ＭＣＡ（株式会社ワールドメタル社製、商品
名） ・条件：７０℃、５分 (10)水洗（２分、室温） (11)置換金めっき ・組成：HGS-100（日立化成工業株式会社製、商品名） ・条件：８５℃、１０分 (12)水洗（２分、室温） (13)無電解金めっき ・組成：HGS-2000（日立化成工業株式会社製、商品名） ・条件：６５℃、４０分Embodiment 2 The following processing is performed on a tungsten terminal on a ceramic substrate formed with a conductor and a molybdenum terminal on a ceramic substrate formed with a circuit. (1) Degreasing ・ Composition: Z-200 (manufactured by World Metal Co., Ltd., trade name) ・ Condition: 50 ° C, 1 minute (2) Washing with water (2 minutes, room temperature) (3) Pickling ・ Composition: 10 weight % Sulfuric acid ・ Condition: room temperature, 1 minute (4) Rinse with water (2 minutes, room temperature) (5) Activation ・ Composition: SA-100 (manufactured by Hitachi Chemical Co., Ltd., trade name) ・ Condition: room temperature, 5 minutes (6 ) Rinse with water (2 minutes, room temperature) (7) Electroless nickel plating ・ Composition: NIPS-100 (trade name, manufactured by Hitachi Chemical Co., Ltd.) ・ Condition: 85 ° C, 20 minutes (8) Rinse with water (2 minutes, room temperature) (9) Displacement palladium plating ・ Composition: MCA (manufactured by World Metal Co., Ltd., trade name) ・ Condition: 70 ° C., 5 minutes (10) Rinse with water (2 minutes, room temperature) (11) Displacement gold plating ・ Composition: HGS- 100 (manufactured by Hitachi Chemical Co., Ltd.) • Condition: 85 ° C, 10 minutes (12) Rinse (2 minutes, room temperature) (13) Electroless gold plating • Composition: HGS-2000 (manufactured by Hitachi Chemical Co., Ltd.) ,Product name) · Conditions: 65 ° C, 40 minutes
【００１３】実施例３ 導体で回路形成したセラミック基板上のタングステン端
子と、導体で回路形成したセラミック基板上のモリブデ
ン端子上に、以下の処理を行う。 (1)脱脂 ・組成：Z-200（株式会社ワ−ルドメタル社製、商品
名） ・条件：５０℃、１分 (2)水洗（２分、室温） (3)酸洗 ・組成：１０重量％硫酸 ・条件：室温、１分 (4)水洗（２分、室温） (5)活性化 ・組成：SA-100（日立化成工業株式会社製、商品名） ・条件：室温、５分 (6)水洗（２分、室温） (7)無電解ニッケルめっき ・組成：NIPS-100（日立化成工業株式会社製、商品名） ・条件：８５℃、２０分 (8)水洗（２分、室温） (9)無電解パラジウムめっき ・組成：パレット（小島化学薬品株式会社製、商品名） ・条件：７０℃、５分 (10)水洗（２分、室温） (11)置換金めっき ・組成：HGS-100（日立化成工業株式会社製、商品名） ・条件：８５℃、１０分 (12)水洗（２分、室温） (13)無電解金めっき ・組成：HGS-2000（日立化成工業株式会社製、商品名） ・条件：６５℃、４０分Embodiment 3 The following processing is performed on a tungsten terminal on a ceramic substrate formed of a conductor and a molybdenum terminal on a ceramic substrate formed of a circuit. (1) Degreasing ・ Composition: Z-200 (manufactured by World Metal Co., Ltd., trade name) ・ Condition: 50 ° C, 1 minute (2) Washing with water (2 minutes, room temperature) (3) Pickling ・ Composition: 10 weight % Sulfuric acid ・ Condition: room temperature, 1 minute (4) Rinse with water (2 minutes, room temperature) (5) Activation ・ Composition: SA-100 (manufactured by Hitachi Chemical Co., Ltd., trade name) ・ Condition: room temperature, 5 minutes (6 ) Rinse with water (2 minutes, room temperature) (7) Electroless nickel plating ・ Composition: NIPS-100 (trade name, manufactured by Hitachi Chemical Co., Ltd.) ・ Condition: 85 ° C, 20 minutes (8) Rinse with water (2 minutes, room temperature) (9) Electroless palladium plating ・ Composition: Pallet (trade name, manufactured by Kojima Chemical Co., Ltd.) ・ Condition: 70 ° C, 5 minutes (10) Rinse with water (2 minutes, room temperature) (11) Replacement gold plating ・ Composition: HGS -100 (manufactured by Hitachi Chemical Co., Ltd.)-Condition: 85 ° C, 10 minutes (12) Rinse (2 minutes, room temperature) (13) Electroless gold plating-Composition: HGS-2000 (Hitachi Chemical Co., Ltd.) Product name) Conditions: 65 ° C, 40 minutes
【００１４】比較例１ 導体で回路形成したセラミック基板上のタングステン
と、導体で回路形成したセラミック基板上のモリブデン
端子上に、以下の処理を行う。 (1)脱脂 ・組成：Z-200（株式会社ワ−ルドメタル社製、商品
名） ・条件：５０℃、１分 (2)水洗（２分、室温） (3)酸洗 ・組成：１０重量％硫酸 ・条件：室温、１分 (4)水洗（２分、室温） (5)活性化 ・SA-100（日立化成工業株式会社製、商品名） ・条件：室温、５分 (6)水洗（２分、室温） (7)無電解ニッケルめっき ・組成：NIPS-100（日立化成工業株式会社製、商品名） ・条件：８５℃、２０分 (8)水洗（２分、室温） (9)置換金めっき ・組成：HGS-100（日立化成工業株式会社製、商品名） ・条件：８５℃、１０分 (10)水洗（２分、室温） (11)無電解金めっき ・組成：HGS-2000（日立化成工業株式会社製、商品名） ・条件：６５℃、４０分COMPARATIVE EXAMPLE 1 The following processing is performed on tungsten on a ceramic substrate formed with a conductor and on molybdenum terminals on a ceramic substrate formed with a circuit. (1) Degreasing ・ Composition: Z-200 (manufactured by World Metal Co., Ltd., trade name) ・ Condition: 50 ° C, 1 minute (2) Washing with water (2 minutes, room temperature) (3) Pickling ・ Composition: 10 weight % Sulfuric acid ・ Condition: Room temperature, 1 minute (4) Rinse with water (2 minutes, room temperature) (5) Activation ・ SA-100 (manufactured by Hitachi Chemical Co., Ltd., trade name) ・ Condition: Room temperature, 5 minutes (6) Rinse with water (2 minutes, room temperature) (7) Electroless nickel plating ・ Composition: NIPS-100 (trade name, manufactured by Hitachi Chemical Co., Ltd.) ・ Condition: 85 ° C, 20 minutes (8) Rinse with water (2 minutes, room temperature) (9 ) Displacement gold plating ・ Composition: HGS-100 (Hitachi Chemical Industries, Ltd., trade name) ・ Condition: 85 ° C, 10 minutes (10) Rinse with water (2 minutes, room temperature) (11) Electroless gold plating ・ Composition: HGS -2000 (trade name, manufactured by Hitachi Chemical Co., Ltd.)-Conditions: 65 ° C, 40 minutes
【００１５】比較例２ 導体で回路形成したセラミック基板上のタングステン
と、導体で回路形成したセラミック基板上のモリブデン
端子上に、以下の処理を行う。 (1)脱脂 ・組成：Z-200（株式会社ワ−ルドメタル社製、商品
名） ・条件：５０℃、１分 (2)水洗（２分、室温） (3)酸洗 ・組成：１０重量％硫酸 ・条件室温、１分 (4)水洗（２分、室温） (5)活性化 ・組成：SA-100（日立化成工業株式会社製、商品名） ・条件：室温、５分 (6)水洗（２分、室温） (7)無電解ニッケルめっき ・NIPS-100（日立化成工業株式会社製、商品名） ・条件：８５℃、２０分 (8)水洗（２分、室温） (9)無電解パラジウムめっき ・組成：APP（石原薬品株式会社製、商品名） ・条件：５０℃、２０分Comparative Example 2 The following process is performed on tungsten on a ceramic substrate formed with a conductor and on molybdenum terminals on a ceramic substrate formed with a circuit. (1) Degreasing ・ Composition: Z-200 (manufactured by World Metal Co., Ltd., trade name) ・ Condition: 50 ° C, 1 minute (2) Washing with water (2 minutes, room temperature) (3) Pickling ・ Composition: 10 weight % Sulfuric acid ・ Condition room temperature, 1 minute (4) Rinse with water (2 minutes, room temperature) (5) Activation ・ Composition: SA-100 (manufactured by Hitachi Chemical Co., Ltd., trade name) ・ Condition: Room temperature, 5 minutes (6) Rinse (2 minutes, room temperature) (7) Electroless nickel plating ・ NIPS-100 (Hitachi Chemical Industries, Ltd., trade name) ・ Condition: 85 ° C, 20 minutes (8) Rinse (2 minutes, room temperature) (9) Electroless palladium plating ・ Composition: APP (trade name, manufactured by Ishihara Chemical Co., Ltd.) ・ Condition: 50 ° C, 20 minutes
【００１６】比較例３ 導体で回路形成したセラミック基板上のタングステン
と、導体で回路形成したセラミック基板上のモリブデン
端子上に、以下の処理を行う。 (1)脱脂 ・組成：Z-200（株式会社ワ−ルドメタル社製、商品
名） ・条件：５０℃、１分 (2)水洗（２分、室温） (3)酸洗 ・組成：１０重量％硫酸 ・室温、１分 (4)水洗（２分、室温） (5)活性化 ・組成：SA-100（日立化成工業株式会社製、商品名） ・条件：室温、５分 (6)水洗（２分、室温） (7)無電解ニッケルめっき ・組成：NIPS-100（日立化成工業株式会社製、商品名） ・条件：８５℃、２０分 (8)水洗（２分、室温） (9)無電解パラジウムめっき ・組成：APP（石原薬品株式会社製、商品名） ・条件：５０℃、２０分 (10)水洗（２分） (11)置換金めっき ・組成：HGS-100（日立化成工業株式会社製、商品名） ・条件：８５℃、１０分COMPARATIVE EXAMPLE 3 The following processing is performed on tungsten on a ceramic substrate formed of a circuit with a conductor and on molybdenum terminals on the ceramic substrate formed of a circuit with a conductor. (1) Degreasing ・ Composition: Z-200 (manufactured by World Metal Co., Ltd., trade name) ・ Condition: 50 ° C, 1 minute (2) Washing with water (2 minutes, room temperature) (3) Pickling ・ Composition: 10 weight % Sulfuric acid ・ Room temperature, 1 minute (4) Washing (2 minutes, room temperature) (5) Activation ・ Composition: SA-100 (manufactured by Hitachi Chemical Co., Ltd., trade name) ・ Condition: Room temperature, 5 minutes (6) Washing (2 minutes, room temperature) (7) Electroless nickel plating ・ Composition: NIPS-100 (trade name, manufactured by Hitachi Chemical Co., Ltd.) ・ Condition: 85 ° C, 20 minutes (8) Rinse with water (2 minutes, room temperature) (9 ) Electroless palladium plating ・ Composition: APP (trade name, manufactured by Ishihara Pharmaceutical Co., Ltd.) ・ Condition: 50 ° C, 20 minutes (10) Rinse (2 minutes) (11) Replacement gold plating ・ Composition: HGS-100 (Hitachi Chemical)・ Condition: 85 ° C, 10 minutes
【００１７】実施例１、２、３と比較例１、２、３で得
たセラミック配線板を１８０℃、２時間熱処理後ワイヤ
ボンディングを行った。この結果、実施例１、２、３の
パラジウム皮膜を形成したものは、付着率１００％であ
り、密着強度は９〜１３ｇであった。比較例１の従来の
ものは、付着率１０％であり、未付着が９０％であっ
た。また、熱処理なしでは、実施例１、２、３と比較例
１ともに、付着率は１００％であり、密着強度は９〜１
３ｇであった。さらに、比較例２、３は、熱処理なしで
未付着が発生した。このように本発明の方法は、熱処理
後のワイヤボンディング特性に優れている。The ceramic wiring boards obtained in Examples 1, 2, and 3 and Comparative Examples 1, 2, and 3 were heat-treated at 180 ° C. for 2 hours, and then subjected to wire bonding. As a result, those in which the palladium films of Examples 1, 2, and 3 were formed had an adhesion rate of 100% and an adhesion strength of 9 to 13 g. The conventional example of Comparative Example 1 had an adhesion rate of 10% and non-adhesion of 90%. In addition, without heat treatment, the adhesion rate was 100% and the adhesion strength was 9 to 1 in Examples 1, 2, and 3 and Comparative Example 1.
3 g. Further, in Comparative Examples 2 and 3, non-adhesion occurred without heat treatment. Thus, the method of the present invention has excellent wire bonding characteristics after heat treatment.
【００１８】[0018]
【発明の効果】以上に説明したように、本発明によっ
て、厳しい熱処理条件の下でも接続の良好なワイヤボン
ディングのできる端子とその形成方法を提供することが
できる。As described above, according to the present invention, it is possible to provide a terminal capable of performing wire bonding with good connection even under severe heat treatment conditions and a method of forming the terminal.
Claims (4)
上に、無電解ニッケルめっき皮膜、置換パラジウムめっ
き皮膜又は無電解パラジウムめっき皮膜、置換金めっき
皮膜、無電解金めっき皮膜がその順に形成されたことを
特徴とするワイヤボンディング端子。An electroless nickel plating film, a substituted palladium plating film or an electroless palladium plating film, a substituted gold plating film, and an electroless gold plating film are formed in this order on a terminal made of tungsten or molybdenum. Wire bonding terminal.
ジウムめっき皮膜の膜厚が、０．１μｍ以上であること
を特徴とする請求項１に記載のワイヤボンディング端
子。2. The wire bonding terminal according to claim 1, wherein the thickness of the substituted palladium plating film or the electroless palladium plating film is 0.1 μm or more.
膜厚の和が、０．０４μｍ以上であることを特徴とする
請求項１または２に記載のワイヤボンディング端子。3. The wire bonding terminal according to claim 1, wherein the sum of the thicknesses of the displacement gold plating film and the electroless gold plating film is 0.04 μm or more.
なる端子上に、無電解ニッケルめっき、無電解パラジウ
ムめっき又は置換パラジウムめっき、置換金めっき、無
電解金めっきのめっき皮膜を、その順に形成することを
特微とするワイヤボンディング端子の形成方法。4. A method of forming a plating film of electroless nickel plating, electroless palladium plating or displacement palladium plating, displacement gold plating, and electroless gold plating on a terminal made of tungsten or molybdenum in that order. A method for forming a fine wire bonding terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9047696A JPH10242205A (en) | 1997-03-03 | 1997-03-03 | Wire bonding terminal and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9047696A JPH10242205A (en) | 1997-03-03 | 1997-03-03 | Wire bonding terminal and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10242205A true JPH10242205A (en) | 1998-09-11 |
Family
ID=12782458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9047696A Pending JPH10242205A (en) | 1997-03-03 | 1997-03-03 | Wire bonding terminal and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10242205A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6825512B2 (en) * | 2000-08-11 | 2004-11-30 | Thales | Micromachined sensor with insulating protection of connections |
| JP2006093365A (en) * | 2004-09-24 | 2006-04-06 | Stanley Electric Co Ltd | Method of modularizing circuit board |
| JP2008291348A (en) * | 2007-04-27 | 2008-12-04 | Hitachi Chem Co Ltd | Connecting terminal, semiconductor package using connecting terminal, and method for manufacturing semiconductor package |
| US8124174B2 (en) | 2007-04-16 | 2012-02-28 | C. Uyemura & Co., Ltd. | Electroless gold plating method and electronic parts |
| US11183425B2 (en) | 2019-07-16 | 2021-11-23 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device and method of laminating metal |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61265853A (en) * | 1985-05-17 | 1986-11-25 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | Formation of metal contact |
| JPH05315731A (en) * | 1992-05-07 | 1993-11-26 | Hitachi Ltd | Manufacture of connection pad of wiring board |
| JPH07297524A (en) * | 1994-04-21 | 1995-11-10 | Ibiden Co Ltd | Ic card printed wiring board |
| JPH098438A (en) * | 1995-06-20 | 1997-01-10 | Hitachi Chem Co Ltd | Wire bonding terminal, manufacture thereof and manufacture of semiconductor mounting substrate using that wire bonding terminal |
-
1997
- 1997-03-03 JP JP9047696A patent/JPH10242205A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61265853A (en) * | 1985-05-17 | 1986-11-25 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | Formation of metal contact |
| JPH05315731A (en) * | 1992-05-07 | 1993-11-26 | Hitachi Ltd | Manufacture of connection pad of wiring board |
| JPH07297524A (en) * | 1994-04-21 | 1995-11-10 | Ibiden Co Ltd | Ic card printed wiring board |
| JPH098438A (en) * | 1995-06-20 | 1997-01-10 | Hitachi Chem Co Ltd | Wire bonding terminal, manufacture thereof and manufacture of semiconductor mounting substrate using that wire bonding terminal |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6825512B2 (en) * | 2000-08-11 | 2004-11-30 | Thales | Micromachined sensor with insulating protection of connections |
| JP2006093365A (en) * | 2004-09-24 | 2006-04-06 | Stanley Electric Co Ltd | Method of modularizing circuit board |
| JP4529041B2 (en) * | 2004-09-24 | 2010-08-25 | スタンレー電気株式会社 | Circuit board modularization method |
| US8124174B2 (en) | 2007-04-16 | 2012-02-28 | C. Uyemura & Co., Ltd. | Electroless gold plating method and electronic parts |
| JP2008291348A (en) * | 2007-04-27 | 2008-12-04 | Hitachi Chem Co Ltd | Connecting terminal, semiconductor package using connecting terminal, and method for manufacturing semiconductor package |
| US8426742B2 (en) | 2007-04-27 | 2013-04-23 | Hitachi Chemical Company, Ltd. | Connecting terminal, semiconductor package using connecting terminal and method for manufacturing semiconductor package |
| US11183425B2 (en) | 2019-07-16 | 2021-11-23 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device and method of laminating metal |
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