JPS6023199B2 - Dispersion plating method - Google Patents
Dispersion plating methodInfo
- Publication number
- JPS6023199B2 JPS6023199B2 JP11899982A JP11899982A JPS6023199B2 JP S6023199 B2 JPS6023199 B2 JP S6023199B2 JP 11899982 A JP11899982 A JP 11899982A JP 11899982 A JP11899982 A JP 11899982A JP S6023199 B2 JPS6023199 B2 JP S6023199B2
- Authority
- JP
- Japan
- Prior art keywords
- sic
- free
- dispersion plating
- plating
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Chemically Coating (AREA)
- Carbon And Carbon Compounds (AREA)
Description
【発明の詳細な説明】
本発明はＳＩＣ（カーボランダム）を共析物質とした分
散メッキ方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dispersion plating method using SIC (carborundum) as a eutectoid.
従来、分散メッキ方法には、炭化物、酸化物あるし・は
窒化物等を共祈物質として使用し、Ｎｉ，Ｃｕ等をマト
リックスとするものがある。Conventional dispersion plating methods include methods in which carbides, oxides, nitrides, etc. are used as a supporting material, and Ni, Cu, etc. are used as a matrix.
共析物質としては特に工業的利用性において優れるＳＩ
Ｃが使用されている。ＳＩＣは優れた耐摩耗性を有し、
かかる性質の要求される部所への分散メッキに使用され
ている。ＳＩＣはまた価格も安価であり、入手も容易で
ある。しかし、共折物質として使用するＳＩＣの共折量
を一定に保持することがなかなか困難であった。SI has excellent industrial applicability as a eutectoid substance.
C is used. SIC has excellent wear resistance,
It is used for dispersion plating on areas where such properties are required. SICs are also inexpensive and easily available. However, it has been difficult to maintain a constant amount of co-fraction of SIC used as a co-folding substance.
すなわち、同一メッキ裕組成および同一メッキ条件等で
この分散メッキを行っても、ＳＩＣの品質のわずかの相
違によって、得られるメッキ被膜中のＳＩＣの共析量に
は差が生じ一定ではない。このため、共析量を一定とす
るために上記作業条件をたぼたぽ修整する必要があり、
操作が繁雑となっていた。特に、できあいのＳＩＣを使
用する際、メーカーによって製造方法が異なり、品質が
相違することから、作業条件を一定にすることができず
、この面で改善が望まれていた。本発明は上記事情に鑑
みてなされたもので、ＳＩＣ粉末中に一定量の遊離の炭
素を含ませ、メッキ被膜中のＳＩＣ共析量を一定にする
ようにした分散メッキ方法を提供するものである。That is, even if this dispersion plating is performed with the same plating composition and the same plating conditions, the amount of eutectoid SIC in the resulting plating film varies and is not constant due to slight differences in the quality of SIC. Therefore, in order to keep the amount of eutectoid constant, it is necessary to make many adjustments to the above working conditions.
Operations were complicated. In particular, when using ready-made SICs, manufacturing methods vary depending on the manufacturer and the quality varies, making it impossible to maintain constant working conditions, and improvements have been desired in this respect. The present invention has been made in view of the above circumstances, and provides a dispersion plating method in which a certain amount of free carbon is contained in SIC powder, and the amount of SIC eutectoid in the plating film is made constant. be.
本発明の分散メッキ方法を以下に詳細に説明する。The dispersion plating method of the present invention will be explained in detail below.
メッキ裕中に懸濁している共析物質が、金属マトリック
ス中に共析する機構については、種々の機構が考えられ
る。実際には種々の要因が重なり合っているのであるが
、本発明では、金属イオンを吸着した共析物質が、電気
泳動により陰極へ引きつけられるという機構を考慮し、
これ力Ｓｉｃを共析物質とする分散メッキ方法において
特に重要なことに看日した。上記機構においては、金属
イオンを吸着したＳＩＣの表面電荷の集積を良好にする
ことが、メッキ被膜の特性を向上させることにつながる
。そこでＳＩＣの表面電荷の集積を良好にさせるための
手段を検討した結果、所定量の遊離のＣ（炭素）をＳＩ
Ｃ粉末中に含ませることが有効であることに想到した。
すなわち、本発明では０．００５〜５重量％の遊離のＣ
を含むＳＩＣ粉末を共折物質として使用する。Various mechanisms can be considered for the mechanism by which the eutectoid substance suspended in the plating layer eutectoids into the metal matrix. In reality, various factors overlap, but in the present invention, we take into consideration the mechanism in which the eutectoid material that has adsorbed metal ions is attracted to the cathode by electrophoresis.
This was found to be particularly important in the dispersion plating method using Sic as the eutectoid material. In the above mechanism, improving the accumulation of surface charges on the SIC that has adsorbed metal ions leads to improving the properties of the plating film. Therefore, as a result of investigating means to improve the accumulation of surface charges on SIC, we found that a predetermined amount of free C (carbon) was added to SI.
We have come up with the idea that it is effective to include it in C powder.
That is, in the present invention, 0.005 to 5% by weight of free C
SIC powder containing is used as the refracting material.
遊離のＣは極めて電荷を帯びやすく、ＳＩＣの表面電荷
の集積を良好とする。しかし、遊離のＣがある一定量を
超えると、Ｃの共折量が増大し、マトリックスが劣化す
る。そこで、上記範囲内に遊離のＣの量を管理する必要
がある。次に本発明の実施例を以下に挙げる。実施例
１
ＳＩＣは、桂石とコークスとを主原料とし、その他の薬
品等を添加配合し、これらを電気炉の中に充填すること
によって１６００ｏｏ〜２２００ｑｏにおいて結晶とし
て得られる。Free C is extremely easily charged and facilitates the accumulation of surface charges on the SIC. However, when free C exceeds a certain amount, the amount of co-fraction of C increases and the matrix deteriorates. Therefore, it is necessary to control the amount of free C within the above range. Next, examples of the present invention are listed below. Example
1 SIC is obtained as a crystal at 1,600 oo to 2,200 qo by using kaiseki and coke as main raw materials, adding and blending other chemicals, etc., and filling them into an electric furnace.
この原材料であるコクスの主成分Ｃの未反応物が遊離の
Ｃとして残るので、これを製造工程におて０．００５〜
５重量％の範囲に含有されるように管理する。このよう
にして得たＳＩＣを分散メッキにおいて共析物質として
使用する。実施例 ２
焼成タイプのＳＩＣすなわち、製造最終段階で、ＳＩＣ
中に遊離のＣを全く含有しないＳＩＣ粉末中にＣの粒子
を０．００５〜５重量％の割合で混合熟成する。Since the unreacted material of the main component C of this raw material, Coke, remains as free C, this is removed in the manufacturing process from 0.005
The content is controlled to be within the range of 5% by weight. The SIC thus obtained is used as a eutectoid in dispersion plating. Example 2 Sintered type SIC, that is, SIC at the final stage of manufacturing
C particles are mixed and aged in a proportion of 0.005 to 5% by weight in SIC powder that does not contain any free C.
適当時間混合熟成した後、遊離のＣを含有するＳＩＣを
共折物質としてメッキ液中に懸濁させ、分散メッキを行
なう。実施例 ３焼成タイプのＳＩＣ粉末をメッキ液中
に懸濁させる際、ＳＩＣ粉末の量の０．００５〜５重量
％に相当するＣの粉末をメッキ液中に懸濁させ熟成させ
る。After mixing and aging for an appropriate period of time, SIC containing free C is suspended in a plating solution as a symbiotic substance, and dispersion plating is performed. Example 3 When a fired type SIC powder is suspended in a plating solution, C powder corresponding to 0.005 to 5% by weight of the SIC powder is suspended in the plating solution and aged.
適当時間熟成後、ＳＩＣおよびＣの懸濁したメッキ液を
使用し分散メッキを行なう。上記各実施例によって得れ
たメッキ被膜はいずれも、ＳＩＣの共折量が一定で良好
な特性を示した。After aging for a suitable time, dispersion plating is performed using a plating solution in which SIC and C are suspended. All of the plated films obtained in the above-mentioned Examples exhibited good characteristics with a constant amount of co-fraction of SIC.
特に、実施例２，３において、ＳＩＣのメーカーの相違
によってメッキ被膜の品質が異なることはなかった。上
言己にように本発明にかかる分散メッキ方法は、ＳＩＣ
粉末に０．００５〜５重量％の遊離のＣを含めることと
し、ＳＩＣの品質の差にかかわらず、作業条件を変える
ことなく一定量の共折量を保つことができる。In particular, in Examples 2 and 3, the quality of the plating film did not differ depending on the manufacturer of the SIC. As mentioned above, the dispersion plating method according to the present invention is based on SIC
By including 0.005 to 5% by weight of free C in the powder, a constant amount of co-fraction can be maintained without changing the working conditions, regardless of the difference in the quality of SIC.
また得られるメッキ被膜自体は極めて良好な特性を示し
、さらに、従来使用できなったようなＳＩＣも使用でき
るようになるなど多くの利点を有する。なお、ＳＩＣ粉
末中の遊離のＣを０．００５〜５重量％に保つことが好
ましいことを示す実施例Ａ〜Ｄを以下に示す。Furthermore, the resulting plating film itself exhibits extremely good properties and has many advantages, such as the ability to use SIC, which was previously unusable. Examples A to D showing that it is preferable to maintain free C in the SIC powder at 0.005 to 5% by weight are shown below.
通常のスルフアミン酸ニッケル格に、それぞれ以下の粉
末を共折物質として５０夕／その割合で懸濁させたメッ
キ液を使用した。A plating solution was used in which the following powders were suspended in ordinary nickel sulfamate at a ratio of 50 mm/day as a symbiotic substance.
実験例Ａ：粒子径３ムのＳＩＣ粉末（遊離のＣの含有量
は０．５重量％）実験例Ｂ：粒子径３山のＳＩＣ粉末（
遊離のＣの含有量は５．１重量％）実験例Ｃ：上記実験
例Ａと同一のＳＩＣを焼成し、ＳＩＣ粉末中の遊離のＣ
の含有量のみ燃焼除去した粒子径３仏のＳＩＣ粉末（遊
離のＣの含有量は０重量％）実験例Ｄ：粒子径１．５仏
のみの粉末、
上記〆ッキ液で分散メッキを施した結果は以下のとおり
であった。Experimental example A: SIC powder with a particle size of 3mm (content of free C is 0.5% by weight) Experimental example B: SIC powder with a particle size of 3mm (
The content of free C is 5.1% by weight) Experimental Example C: The same SIC as in Experimental Example A above was fired, and the free C in the SIC powder was
Experimental example D: Powder with a particle size of only 1.5 mm, dispersion plating with the above-mentioned lacquer solution. The results were as follows.
実験例Ａ：Ｎｉ−ＳＩＣ分散メッキ被膜中のＳＩＣ共析
量は約６重量％であり、その外観、層等全て良好であっ
た。Experimental Example A: The amount of eutectoid SIC in the Ni-SIC dispersion plating film was about 6% by weight, and the appearance, layers, etc. were all good.
実験例Ｂ：Ｎｉ−ＳＩＣ分散メッキ被膜中のＳＩＣ共析
量は約６重量％であったが、ＳＩＣとともに遊離のＣが
多量に共析されてしまい、被膜形成が不良で、密着性も
劣っていた。Experimental example B: The amount of SIC eutectoid in the Ni-SIC dispersion plating film was approximately 6% by weight, but a large amount of free C was eutectoided with SIC, resulting in poor film formation and poor adhesion. was.
実験例Ｃ：Ｎｉ一ＳＩＣ分散メッキ被膜中のＳＩＣ共祈
量は約０．５重量％と少なく、メッキ状態は良好であっ
たが、Ｎｉ−ＳＩＣ分散メッキ被膜としてその機能を全
くはたごなかつた。Experimental example C: The amount of SIC in the Ni-SIC dispersion plating film was as small as about 0.5% by weight, and the plating condition was good, but it did not completely lose its function as a Ni-SIC dispersion plating film. Ta.
実験例Ｄ：分散メッキ被膜中のＣ含有量は１５重量％で
あり、Ｃのみが共折しているために極めてもろく、機能
が不良であった。Experimental Example D: The C content in the dispersion plating film was 15% by weight, and since only C was co-fractionated, it was extremely brittle and had poor functionality.
Claims (1)
共析物質として使用することを特徴とする分散メツキ方
法。1. A dispersion plating method characterized in that SiC powder containing 0.005 to 5% by weight of free C is used as a eutectoid material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11899982A JPS6023199B2 (en) | 1982-07-08 | 1982-07-08 | Dispersion plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11899982A JPS6023199B2 (en) | 1982-07-08 | 1982-07-08 | Dispersion plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS599199A JPS599199A (en) | 1984-01-18 |
| JPS6023199B2 true JPS6023199B2 (en) | 1985-06-06 |
Family
ID=14750490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11899982A Expired JPS6023199B2 (en) | 1982-07-08 | 1982-07-08 | Dispersion plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6023199B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4862013B2 (en) * | 2008-06-05 | 2012-01-25 | 本田技研工業株式会社 | Composite plating method |
-
1982
- 1982-07-08 JP JP11899982A patent/JPS6023199B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS599199A (en) | 1984-01-18 |
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