JPS599199A - Dispersion plating method - Google Patents
Dispersion plating methodInfo
- Publication number
- JPS599199A JPS599199A JP11899982A JP11899982A JPS599199A JP S599199 A JPS599199 A JP S599199A JP 11899982 A JP11899982 A JP 11899982A JP 11899982 A JP11899982 A JP 11899982A JP S599199 A JPS599199 A JP S599199A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- eutectoid
- plating
- free
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemically Coating (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は５ｉＣ（カーボランダム）を共析物質とした分
散メッキ方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dispersion plating method using 5iC (carborundum) as a eutectoid.
従来、分散メッキ方法には、炭化物、酸化物あるいは窒
化物等を共析物質として使用し％Ｎ’ＩＣｕ等をマトリ
ックスとするものがある。共析物質としては特に工業的
利用性において優れるＳｉＣが使用さノｔている。Ｓｉ
Ｃは優れた耐摩耗性を有し、かかる性質の要求される部
所への分散メッキに使用されている。ＳｉＣはまた価格
も安価であり、入手も容易である。Conventionally, some dispersion plating methods use carbides, oxides, nitrides, or the like as eutectoids and %N'ICu or the like as a matrix. As the eutectoid material, SiC is particularly used because it is excellent in industrial applicability. Si
C has excellent wear resistance and is used for dispersion plating on areas where such properties are required. SiC is also inexpensive and easily available.
１、かし、共析物質りして使用するｓｉｃの共析量を一
定に保持することがながなが困難であった。すなわち、
同一メッキ浴組成および同一メッキ条件等でこの分散メ
ッキを行っても、 ＳｉＣの品質のわずかの相違によっ
て、得られるメツ被膜中のＳｉＣの共析ｉＫは差が生じ
一定ではない。1. It has been very difficult to maintain the eutectoid amount of SIC used as a eutectoid substance at a constant level. That is,
Even if this dispersion plating is performed with the same plating bath composition and the same plating conditions, the eutectoid iK of SiC in the resulting metal coating will vary due to slight differences in the quality of the SiC and will not be constant.
このため、共析量を一定とするために上記作業条件をた
びたび修整する必要があり、操作が繁雑となっていた。Therefore, in order to keep the amount of eutectoid constant, it is necessary to frequently adjust the working conditions, making the operation complicated.
特に、できあいのｓｉｃを使用する際、メーカーによっ
て製造方法が異なり、品質が相違することから、作業条
件を一定にすることができず、この面で改善が望まれて
いた。In particular, when using ready-made SIC, manufacturing methods vary depending on the manufacturer, and the quality varies, making it impossible to maintain constant working conditions, and improvements have been desired in this respect.
本発明は上記事情に鑑みてなされたもので、ＳｉＣ粉末
中に一定量の遊離の炭素を含ませ、メッキ被膜中のＳｉ
Ｃ共析量を一定にするようにした分散メッキ方法を提供
するものである。The present invention was made in view of the above-mentioned circumstances, and includes a certain amount of free carbon in SiC powder, so that the Si in the plating film can be removed.
The present invention provides a dispersion plating method in which the amount of C eutectoid is kept constant.
本発明の分散メッキ方法を以下に詳細に説明する。メッ
キ浴中に懸濁している共析物質が、金属マトリックス中
ｆ共析する機構については、種々の機構が考えらねる。The dispersion plating method of the present invention will be explained in detail below. Various mechanisms can be considered for the eutectoid material suspended in the plating bath to eutectoid in the metal matrix.
実際には神々の安置が重なり合っているのであるが、本
発明では、金属イオンを吸着した共析物質が、電気泳動
により陰極へ、引きつけらツクるという機構を考慮１２
、どれがＳｉＣを共析物質とする分散メッキ方法におい
て特にｍ要であることに着目Ｉまた一６上記機構におい
ては、金属イオンを吸着したＳｉＣの表面電荷の重積を
良好にすることが、メッキ被膜の特性を白土きせること
につながる、そこで８ＩＣの表面電荷σ）重積を良好に
させるだめの手段を検討１．／コ結果、所定昂の遊離の
Ｃ（炭素）をＳｉＣ粉末中に含ませることが有効である
ことに想到した。In reality, the enshrinements of the gods overlap, but in the present invention, we take into account the mechanism in which the eutectoid material adsorbing metal ions is attracted to the cathode by electrophoresis12.
, which is especially important in the dispersion plating method using SiC as the eutectoid substance.In addition, in the above mechanism, improving the accumulation of surface charges on the SiC that has adsorbed metal ions is Therefore, we investigated ways to improve the surface charge σ) stacking of the 8IC, which would lead to poor characteristics of the plating film.1. As a result, we have found that it is effective to include a predetermined amount of free C (carbon) in SiC powder.
すなわち、本発明では０．００５〜５車（１；チの遊離
のＣを含むＳｌＣ粉末を共析物γＳと１−２てｆ史用す
る。遊肉１ＦのＣは極めて電荷を帯びや−４く、ＳＩＣ
の表面電荷の重積を良好とする。し、かシー７、遊離の
Ｃがある一定量を超えると、Ｃの共析品が増大し７、マ
トリックスが劣化す、乙。そこで、上記ｆｌｉ１ｔ、囲
内に遊離のＣのにを管理する必要がある。That is, in the present invention, SlC powder containing free C of 0.005 to 5 (1; 4.SIC
improves surface charge stacking. However, when free C exceeds a certain amount, the amount of eutectoid C increases and the matrix deteriorates. Therefore, it is necessary to manage free C within the above fli1t.
次に本発明の実施例を以下に挙げる。Next, examples of the present invention are listed below.
実施例１゜
ＳｉＣは、砂石とコークスとを主原料とし、その他の薬
品等を徐加配合し、これらを′電気炉の中に充填するこ
とによって１６００Ｃ〜２２００Ｃにおいて結晶として
得られる。この原材料であるコークスの主成分Ｃの未反
応物が遊離のＣとして残るので、これを製造工程におい
て０００５〜５重量％の範囲に含有されるように管理す
る。このようにして得たＳＩＣを分散メッキにおいて共
析物質として使用する。Example 1 SiC is obtained as crystals at 1600C to 2200C by using sandstone and coke as main raw materials, slowly adding other chemicals, etc., and filling them into an electric furnace. Since the unreacted material of the main component C of coke, which is the raw material, remains as free C, this is controlled to be contained in the range of 0005 to 5% by weight in the manufacturing process. The SIC thus obtained is used as a eutectoid in dispersion plating.
実施例２゜
焼成タイプのＳｉＣすなわち、製造最終段階で、ＳｉＣ
中に遊離のＣを全く含有しないＳｉＣ粉末中ＥＣの粒子
を０００５〜５重侶チの割合で混合熟成する。適当時間
混合熟成した後、遊離のＣを含有するＳｉＣを共析物質
としてメッキ液中に懸濁させ、分散メッキを行なう。Example 2゜Sintered type SiC, that is, at the final stage of manufacturing, SiC
Particles of EC in SiC powder containing no free C are mixed and aged in a ratio of 0005 to 5 carbon atoms. After mixing and aging for an appropriate period of time, SiC containing free C is suspended in a plating solution as a eutectoid to perform dispersion plating.
実施例
焼成タイプのＳｉＣ粉末をメッキ液中に懸濁させる際、
ＳｉＣ粉末の量の０００５〜５重量％に相当するＣの粉
末をメッキ液中に懸濁させ熟成させる。適当時間熟成後
、ＳｉＣおよびＣの懸濁したメッキ液を使用して分散メ
ッキを行なう。Example: When suspending fired type SiC powder in a plating solution,
C powder corresponding to 0005 to 5% by weight of the SiC powder is suspended in a plating solution and aged. After aging for a suitable time, dispersion plating is performed using a plating solution in which SiC and C are suspended.
上記各実施例によって得らｆｑ、たメッキ被膜はいずれ
も、ＳＩＣの共析購が一定で良好な特性を示した。％に
、実施例２．３において、ＳｉＣのシー カーの相違に
よってメッキ被膜の品質が異なることはなかった。All of the fq and plating films obtained in the above examples exhibited good characteristics with constant SIC eutectoid properties. %, in Example 2.3, there was no difference in the quality of the plating film due to the difference in the SiC seeker.
上記のように本発明にかかる分散メッキ方法は、ＳＩＣ
粉末に０．００５〜５重％係の遊離のＣを含めることと
し、ＳｌＣの品質の差にかかわらず、作業条件を変える
ことなく一定量の共析搦を保つことができる。また得ら
れるメッキ被膜自体は極めて良好な特性を示し、さらに
、従来使用できなかった」、う澄Ｓｉ Ｃも使用できる
ようになるなど多くの利点４有する。As described above, the dispersion plating method according to the present invention uses SIC
By including 0.005 to 5% by weight of free C in the powder, a constant amount of eutectoid ratio can be maintained without changing the working conditions, regardless of the difference in quality of SlC. In addition, the resulting plating film itself exhibits extremely good properties, and has many advantages such as the ability to use evaporated SiC, which was not previously possible.
なお、ＳｉＣ粉末中の遊離のＣを０．０ （１５〜５重
量％に保つことが好捷しいことを示す実験例Ａ〜Ｄｆす
］に示す。In addition, experimental examples A to Df show that it is preferable to keep the free C in the SiC powder at 0.0 (15 to 5% by weight).
通常のスルファミノ酸ニッケル浴に、それぞれ以下の粉
末を共析物量として５０９／１．の割合で懸濁させたメ
ッキ液を使用した。In a normal nickel sulfaminate bath, the following powders were added as eutectoids: 509/1. A plating solution suspended at a ratio of .
実験例Ａ°粒子径３μのＳｉＣ粉末
（遊離のＣの含有量は０５重州チ）
実験例Ｂ°粒子径：３μのＳｉＣ粉末
（遊離のＣの含有量Ｑま５，１重弼チ）実験例Ｃ：上記
実験例Ａと同一のＳｉＣを焼成し、ＳｉＣ粉末中の遊離
のＣの含有
酸のみ燃焼除去した粒子径３μの
ＳｉＣ粉末（遊離のＣの含廟量０重
絹％）
実験例り二粒子径１．５μのＣのみの粉末上記メッキ液
で分散メッキを施した＆ｆ 刀！：はＶ、下のとおりで
あった。Experimental Example A SiC powder with a particle size of 3μ (content of free C is 05 times) Experimental Example B° SiC powder with a particle size of 3μ (content of free C is Q 5,1 times) Experimental Example C: The same SiC as in Experimental Example A above was fired, and only the acid containing free C in the SiC powder was removed by combustion. SiC powder with a particle size of 3μ (free C content: 0%) Experiment For example, a C-only powder with a particle size of 1.5μ was dispersion plated with the above plating solution. : was V, as shown below.
実験例Ａ ： Ｎｉ−ＳｉＣ分散メッキ被膜中のＳｉＣ
共析１約６″１Ｊｉｊ係であり、その外観、層等全て良
好であった。Experimental example A: SiC in Ni-SiC dispersion plating film
The eutectoid was approximately 6″1Jij, and its appearance, layers, etc. were all good.
実験例）３：Ｎｉ−ＳｉＣ分散メッキ扱膜中のＳＩＣ共
析昂は約６重数多であったが、
ＳｉＣととも匠遊離のＣが多数に共析
されてし１い、被膜形成が不良で、
密着性も劣っていた。Experimental example) 3: The number of SIC eutectoids in the Ni-SiC dispersion plated film was about 6, but the free C was eutectoided in large numbers along with SiC, and the film formation was difficult. It was defective and had poor adhesion.
実験例Ｃ： Ｎｉ−ＳｉＣ分散メッキ被膜中のＳｉＣ共
析量は約０５重邦チと少なく、メ
ッキ状態は良好であったが、Ｎ１−ＳｉＣ分散メッキ被
膜としてその機能を全
く番」たさなかった。Experimental Example C: The amount of SiC eutectoid in the Ni-SiC dispersion plating film was small at about 0.5 cm, and the plating condition was good, but it did not function as an N1-SiC dispersion plating film at all. Ta.
実験例Ｊ）：分散メッキ扱膜中のＣ含イ劃土１５重Ｍ係
であり、Ｃのみが共析してい
る／こめに極めてもろく、機能が不良
であった。Experimental Example J): 15 layers of C-containing soil in a dispersion-plated film, with only C eutectoided/extremely brittle and poor in function.
Claims (1)
共析物質として使用することを特徴とする分散メッキ方
法。A dispersion plating method characterized in that SiC powder containing 0.005 to 5 times free C is used as a eutectoid material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11899982A JPS6023199B2 (en) | 1982-07-08 | 1982-07-08 | Dispersion plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11899982A JPS6023199B2 (en) | 1982-07-08 | 1982-07-08 | Dispersion plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS599199A true JPS599199A (en) | 1984-01-18 |
| JPS6023199B2 JPS6023199B2 (en) | 1985-06-06 |
Family
ID=14750490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11899982A Expired JPS6023199B2 (en) | 1982-07-08 | 1982-07-08 | Dispersion plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6023199B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009293086A (en) * | 2008-06-05 | 2009-12-17 | Honda Motor Co Ltd | Composite plating treatment method |
-
1982
- 1982-07-08 JP JP11899982A patent/JPS6023199B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009293086A (en) * | 2008-06-05 | 2009-12-17 | Honda Motor Co Ltd | Composite plating treatment method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6023199B2 (en) | 1985-06-06 |
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