JPS60227423A - Adhering method of ingot - Google Patents
Adhering method of ingotInfo
- Publication number
- JPS60227423A JPS60227423A JP8453884A JP8453884A JPS60227423A JP S60227423 A JPS60227423 A JP S60227423A JP 8453884 A JP8453884 A JP 8453884A JP 8453884 A JP8453884 A JP 8453884A JP S60227423 A JPS60227423 A JP S60227423A
- Authority
- JP
- Japan
- Prior art keywords
- ingots
- ingot
- flat
- wax
- jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 3
- 229920001169 thermoplastic Polymers 0.000 claims description 2
- 239000004416 thermosoftening plastic Substances 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 239000002305 electric material Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ）発明の技術分野
本発明はインゴットの接着方法、特に圧電性材料にてな
る複数個のインゴットを一つのテーブルに接着する方法
に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method of bonding ingots, and more particularly to a method of bonding a plurality of ingots made of piezoelectric material to a single table.
Ｃｂ＞技術の背景
単結晶の基板（チップ）に所望のパターン等を形成させ
るウェーハプロセスにおいて、ウェーハは単結晶のイン
ゴットにオリエンテーションフラット及び該フラットに
直交しインゴットの長さ方向に対向する双方の端面を加
工したのち、インゴット切断装置の台にワックスで接着
してカソクーやワイヤでスライスし、次いで該スライス
面を鏡面に仕上げてから、分割により採取できる素子の
複数個に相当する所望パターンが形成されるようになる
。Cb>Technical background In a wafer process in which a desired pattern is formed on a single crystal substrate (chip), the wafer is attached to a single crystal ingot with an orientation flat and both end faces perpendicular to the flat and facing in the length direction of the ingot. After processing, the ingot is bonded with wax to the stand of an ingot cutting device and sliced with a cassock or wire.The sliced surface is then polished to a mirror finish, and a desired pattern corresponding to a plurality of elements that can be collected by division is formed. Become so.
（Ｃ）従来技術と問題点
第１図はワイヤー及び研磨剤を用いてインゴットを多数
枚のウェーハにスライスする方法を説明するための図で
ある。(C) Prior Art and Problems FIG. 1 is a diagram for explaining a method of slicing an ingot into a large number of wafers using a wire and an abrasive.
第１図において、■は図示しないコイルから供給される
ピアノ線（ワイヤ） 、２，３． ４は所定（例えば０
．８ｍｍ） ピッチの溝が多数本削成されピアノ線１を
ガイドするローラであり、長尺のピアノ線１は
ガイドローラ２→３→４−２→−一一一−−−−→２の
如く掛は渡しされ、駆動ガイドローラ２は例えば右方向
へ大きく回転し左方向へ小さく回転し、ガイドローラ３
と４はガイドローラ２に従動するように構成されている
。In FIG. 1, ■ indicates piano wire (wire) supplied from a coil (not shown), 2, 3. 4 is a predetermined value (for example, 0
．． It is a roller that guides the piano wire 1 by cutting a large number of grooves at a pitch of 8 mm), and the long piano wire 1 is guided by the guide roller 2 → 3 → 4-2 → -111---→2. The hook is passed, and the drive guide roller 2 rotates, for example, largely to the right and slightly to the left, and the guide roller 3
and 4 are configured to follow the guide roller 2.
従って、矢印方向へ順次送り出されるピアノ線１はガイ
ドローラ２，３．４を手前から後方、又は後方から手前
へ掛は渡し移送したのち、図示しない巻き取りリールに
巻回されるようになる。一方、ガイドローラ２，３．４
の下方に上下動可能な台５が配設され、熱可塑性樹脂（
ワックス）にて台５に接着されたインゴット６は、台５
の上下動により適当な速度で上昇し、ピアノ線１の往復
動及びインゴット６に振り掛けられた研磨剤（例えばＧ
Ｃ＃１０００砥粒）による切断が終了すると、降下する
ようになる。Therefore, the piano wire 1, which is sent out sequentially in the direction of the arrow, is passed through the guide rollers 2, 3, 3, 4 from the front to the rear, or from the rear to the front, and is then wound on a take-up reel (not shown). On the other hand, guide rollers 2, 3.4
A vertically movable table 5 is arranged below the thermoplastic resin (
The ingot 6 glued to the stand 5 with wax) is attached to the stand 5.
The abrasive (for example, G
When cutting with C#1000 abrasive grains is completed, it begins to descend.
このような装置において、インゴットの長さに対しガイ
ドローラ３と４に掛は渡しされたワイヤの掛は渡し長さ
が十分であり、複数個（例えば２個）のインゴットを同
時にスライス可能なときは、該複数個を直列状にスライ
ス台に接着してスライスされている。In such a device, when the length of the wire passed between the guide rollers 3 and 4 is sufficient for the length of the ingot, and it is possible to slice a plurality of ingots (for example, two) at the same time. The plural pieces are glued in series to a slicing table and sliced.
そこで、例えば２個のインゴットを同時にスライスする
従来の前記接着は、第２図に示す如（、インゴット７と
８はそれぞれのオリエントフラ・ノドをスライス台９の
上面に当接させ、かつインゴット７と８の対向端面を接
着剤（例えば一般工作用の速乾性強力接着剤）１０で接
着したのち、熱可塑性ワックス１１を用いてスライス台
９に接着させていた。Therefore, for example, in the conventional bonding method for slicing two ingots at the same time, as shown in FIG. The opposing end surfaces of and 8 were adhered with an adhesive (for example, a quick-drying strong adhesive for general work) 10, and then adhered to the slicing table 9 using thermoplastic wax 11.
しかし、かかる接着方法においてインゴ・ノドが圧電性
の単結晶であるとき、即ち振動子用素子を切り出すため
ニオブ酸リチウム（ＬｉＮｂＯ３）等の圧電材にてなる
ときは、接着されたインゴ・ノドの端面間で放電がおこ
り、当該部にクラ、ツクや割れの発生することがあった
。However, in this bonding method, when the ingo/nod is a piezoelectric single crystal, that is, when the piezoelectric material such as lithium niobate (LiNbO3) is used to cut out the vibrator element, the bonded ingo/nod Electric discharge occurred between the end faces, causing cracks, nicks, and cracks in the area.
（ｄ）発明の目的
本発明の目的は、上記問題点を除去しインゴットのウェ
ーハ採取枚数を高めることである。(d) Purpose of the Invention The purpose of the present invention is to eliminate the above-mentioned problems and increase the number of wafers to be collected from an ingot.
（ｅ）発明の構成
上記目的は、オリエンテーションフラット及び該フラッ
トに直交し長さ方向に対向する端面が作成された複数個
のインゴットを定盤等の平面にそれぞれの該フラットが
接するように置き、複数個の該インゴットを直列状に当
接させ、該当接させた状態で複数個の該インゴットを治
具に固定し、次いで該治具に保持された複数個のインゴ
ットをインゴット接着テーブルに熱可塑性を有するワッ
クスで接着させてから該金具を取り外すことを特徴とす
る、インゴットの接着方法により達成される。(e) Structure of the Invention The above object is to place a plurality of ingots each having an orientation flat and end faces orthogonal to the flat and facing each other in the length direction on a flat surface such as a surface plate so that each flat is in contact with the flat surface; A plurality of ingots are brought into contact with each other in series, and the plurality of ingots are fixed to a jig while in contact with each other, and then the plurality of ingots held in the jig are bonded to an ingot bonding table using thermoplastic resin. This is achieved by an ingot bonding method characterized by bonding the metal fittings with a wax having the following properties and then removing the metal fittings.
（ｆ）発明の実施例
以下に、図面を用いて本発明に係わる実施例を説明する
。(f) Embodiments of the invention Below, embodiments of the invention will be described with reference to the drawings.
第３図は本発明の一実施例になるインゴット接着用治具
の主要構成と該治具を用いて２個のインゴットの取り付
は方法を説明するための斜視図、第４図は２個の前記イ
ンゴットをスライシング装置の台に接着させた斜視図で
ある。Fig. 3 is a perspective view for explaining the main structure of an ingot bonding jig according to an embodiment of the present invention and a method for attaching two ingots using the jig, and Fig. 4 is a perspective view for explaining the method of attaching two ingots using the jig. FIG. 3 is a perspective view of the ingot of FIG.
第３図において、１２はインゴット接着用治具、１６、
１７は種結晶を成長させたのちオリエンテーションフラ
ット及び該フラットに直交し長さ方向に対向する双方の
端面並びに円筒外周面を研削、ラップ等で加工形成され
たインゴット、１８はインゴットを治具１２にクランプ
するための定盤である。In FIG. 3, 12 is an ingot bonding jig, 16,
17 is an ingot formed by growing a seed crystal, and then grinding and lapping the orientation flat, both end faces perpendicular to the flat and facing each other in the length direction, and the cylindrical outer peripheral surface; 18, the ingot is placed in the jig 12; This is a surface plate for clamping.
治具１２は平面視角形の枠金具１３と押し金具１４と押
しねじ１５にて構成され、押し金具１４は枠金具１３の
一方に螺合されたねじ１５の内側先端に回動自在に保持
されている。The jig 12 is composed of a frame metal fitting 13 having a rectangular shape in plan view, a push metal fitting 14, and a push screw 15. The push metal fitting 14 is rotatably held at the inner tip of a screw 15 screwed into one side of the frame metal fitting 13. ing.
第４図において、１９はスライシング装置のインゴット
接着用の台、２０はインゴット接着用のワックスである
。In FIG. 4, 19 is a table for adhering the ingot of the slicing device, and 20 is a wax for adhering the ingot.
以下に、治具１２を用い２個のインゴソ目６，１７を台
１９に接着する具体的手法につき、第３図と第４図を用
いて説明する。A specific method of bonding the two ingots 6 and 17 to the stand 19 using the jig 12 will be described below with reference to FIGS. 3 and 4.
インボッＦ １６．１７を台１９に接着する第１の段階
として、治具１２にインゴット１６．１７を挟持させる
。In the first step of adhering the ingot F 16.17 to the stand 19, the ingot 16.17 is held between the jig 12.
そのため、定盤１８の上面にオリエンテーションフラッ
トが接するように、かつ、それぞれの一方の端面がほぼ
当接するように２個のインゴット１６，１７を置いたの
ち、そのインゴット１６．１７それぞれの他方の端面を
、治具１２の枠金具１３の一方の内側と押し金具１４の
先端との間に挟み、押しねじ１５を適当な力でねじ込む
ようにする。その結果、インゴット１６．１７はオリエ
ンテーションフラットが同一面に揃い、かつ、その長さ
方向へ直列状態で治具１２に挟持される。Therefore, after placing the two ingots 16 and 17 so that the orientation flat is in contact with the upper surface of the surface plate 18 and so that one end surface of each is almost in contact with the upper surface of the surface plate 18, the other end surface of each ingot 16 and 17 is placed. is sandwiched between the inside of one of the frame fittings 13 of the jig 12 and the tip of the push fitting 14, and the push screw 15 is screwed in with an appropriate force. As a result, the ingots 16 and 17 are held by the jig 12 with their orientation flats aligned on the same plane and in series in the length direction.
次いで、冶具１２とともにインゴソ日６．１７ 、及び
予め適量のワックス２０を上面に塗布した台１９をワッ
クス２０の軟化温度、例えば１２０℃で十分加熱したの
ち、オリエンテーションフラットが台１９の上面にほぼ
接するようにインゴット１６．１７を押し付は後、冷却
させワックス２０を固化させ、ねし１５を緩め治具１２
をインゴット１６．１７から取り除く。Next, at 6.17 pm, the jig 12 and the table 19, whose upper surface has been coated with an appropriate amount of wax 20, are sufficiently heated to the softening temperature of the wax 20, for example, 120° C., and the orientation flat is brought into almost contact with the top surface of the table 19. After pressing the ingots 16 and 17 as shown, the wax 20 is cooled and the wax 20 is solidified, and the screw 15 is loosened and the jig 12
is removed from ingot 16.17.
その結果インゴット１６．１７は、第１図のインゴット
６と同様に、ワックス２０にて台１９の上面に接着され
２個が同時にスライスされ、多数枚のウェーハが一度に
得られることになるが、インゴット１６と１７の当接さ
れた端面間には接着材（電気的絶縁層）が形成されてな
いため、ワックス２０を軟化させるために加熱しても該
端面にクラックの発生される心配がない。As a result, ingots 16 and 17 are bonded to the top surface of table 19 with wax 20, and two of them are sliced at the same time, similar to ingot 6 in FIG. 1, and a large number of wafers are obtained at once. Since no adhesive (electrical insulating layer) is formed between the abutted end faces of the ingots 16 and 17, there is no risk of cracks occurring on the end faces even if the wax 20 is heated to soften it. .
（ｇ）発明の詳細
な説明した如く本発明によれば、複数個のインゴットを
同時にスライスするため同一台板に接着するも、該イン
ゴットの当接端面を接着させる必要がないことにより、
該端面に従来方法で発生していたクラックを無くすこと
ができた。(g) As described in detail, according to the present invention, although a plurality of ingots are bonded to the same base plate for simultaneous slicing, there is no need to bond the abutting end surfaces of the ingots.
It was possible to eliminate cracks that occurred on the end face in the conventional method.
第１図はワイヤー及び研磨剤を用いてインゴットを多数
枚のウェーハにスライスする方法を説明するための図、
第２図は従来方法で接着された２個のインゴットを示す
斜視図、第３図は本発明の一実施例になるインゴット接
着用治具の主要構成と該治具を用いて２個のインゴット
の取り付は方法を説明するための斜視図、第４図は２個
の前記インゴットをスライシング装置の台に接着させた
斜視図である。
図中において、■はピアノ線（ワイヤ） 、２，３゜４
はピアノ線ガイトローラ、５．９．１９はスライシング
装置のインゴット接着用台、６，７，８．１６．１７は
インゴット、１１．２０はワックス、１２はインゴット
接着用治具、１８は定盤である。
晃１ 図FIG. 1 is a diagram for explaining a method of slicing an ingot into a large number of wafers using a wire and an abrasive;
Fig. 2 is a perspective view showing two ingots bonded using a conventional method, and Fig. 3 is a perspective view showing the main structure of an ingot bonding jig according to an embodiment of the present invention, and how two ingots are bonded using the jig. FIG. 4 is a perspective view showing the two ingots bonded to the stand of the slicing device. In the figure, ■ is piano wire (wire), 2,3゜4
is a piano wire guide roller, 5.9.19 is an ingot adhesion table of the slicing device, 6, 7, 8.16.17 is an ingot, 11.20 is wax, 12 is an ingot adhesion jig, and 18 is a surface plate. be. Akira 1 figure
Claims (2)
直交し長さ方向に対向する端面が作成された複数個のイ
ンゴットを定盤等の平面にそれぞれの該フラットが接す
るように置き、複数個の該インゴットを直列状に当接さ
せ、該当接させた状態で複数個の該インゴットを治具に
固定し、次いで該治具に保持された複数個のインゴット
をインゴット接着テーブルに熱可塑性を有するワックス
で接着させてから該金具を取り外すことを特徴とするイ
ンゴットの接着方法。(1) A plurality of ingots each having an orientation flat and an end face perpendicular to the flat and facing in the length direction are placed on a flat surface such as a surface plate so that the flats are in contact with each other, and the plurality of ingots are arranged in series. The plurality of ingots are fixed to a jig in the state of contact, and then the plurality of ingots held by the jig are bonded to an ingot bonding table with thermoplastic wax. A method for adhering an ingot, the method comprising removing the metal fitting from the ingot.
ことを特徴とする特許 に記載したインゴットの接着方法。(2) The ingot bonding method described in the patent, wherein the ingot is an ingot of a piezoelectric material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8453884A JPS60227423A (en) | 1984-04-26 | 1984-04-26 | Adhering method of ingot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8453884A JPS60227423A (en) | 1984-04-26 | 1984-04-26 | Adhering method of ingot |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60227423A true JPS60227423A (en) | 1985-11-12 |
Family
ID=13833420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8453884A Pending JPS60227423A (en) | 1984-04-26 | 1984-04-26 | Adhering method of ingot |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60227423A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5100839A (en) * | 1988-11-01 | 1992-03-31 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing wafers used for electronic device |
| WO2001091981A1 (en) * | 2000-05-31 | 2001-12-06 | Memc Electronic Materials, S.P.A. | Wire saw and process for slicing multiple semiconductor ingots |
| JP2010098307A (en) * | 2008-10-15 | 2010-04-30 | Siltronic Ag | Method for simultaneously cutting compound rod of semiconductor material into multiplicity of wafers |
| CN102092102A (en) * | 2010-10-08 | 2011-06-15 | 常州天合光能有限公司 | Crystal-block bonding rod slicing process |
| CN102294757A (en) * | 2011-08-08 | 2011-12-28 | 江西金葵能源科技有限公司 | Method for splicing short mono-crystal rods cut by using diamond wire |
| CN114953225A (en) * | 2022-05-17 | 2022-08-30 | 河北同光半导体股份有限公司 | Method for directionally cutting silicon carbide by using monomer |
-
1984
- 1984-04-26 JP JP8453884A patent/JPS60227423A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5100839A (en) * | 1988-11-01 | 1992-03-31 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing wafers used for electronic device |
| WO2001091981A1 (en) * | 2000-05-31 | 2001-12-06 | Memc Electronic Materials, S.P.A. | Wire saw and process for slicing multiple semiconductor ingots |
| US6941940B1 (en) | 2000-05-31 | 2005-09-13 | Memc Electronic Materials, S.P.A. | Wire saw and process for slicing multiple semiconductor ingots |
| JP2010098307A (en) * | 2008-10-15 | 2010-04-30 | Siltronic Ag | Method for simultaneously cutting compound rod of semiconductor material into multiplicity of wafers |
| CN102092102A (en) * | 2010-10-08 | 2011-06-15 | 常州天合光能有限公司 | Crystal-block bonding rod slicing process |
| CN102294757A (en) * | 2011-08-08 | 2011-12-28 | 江西金葵能源科技有限公司 | Method for splicing short mono-crystal rods cut by using diamond wire |
| CN114953225A (en) * | 2022-05-17 | 2022-08-30 | 河北同光半导体股份有限公司 | Method for directionally cutting silicon carbide by using monomer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI564948B (en) | Hard and brittle materials for grinding, grinding processing systems and grinding, grinding methods | |
| TWI424484B (en) | Wafer grinding method and wafer | |
| JPS60227423A (en) | Adhering method of ingot | |
| JP5406119B2 (en) | Wafer manufacturing method and wafer manufacturing apparatus | |
| KR960003541B1 (en) | Wafering device and the method for using the same | |
| JP5117880B2 (en) | Wafer fabrication method | |
| JP2509265B2 (en) | Wafer manufacturing method and apparatus | |
| JPH0661203A (en) | Method of grinding semiconductor wafer | |
| JP3069366B2 (en) | Manufacturing method of crystal unit | |
| JPH029186A (en) | Manufacture of square type block | |
| JP3847825B2 (en) | Manufacturing method of optical transmitter array | |
| JP2002111420A (en) | Wafer for elastic surface wave device and its manufacturing method | |
| JPH08321009A (en) | Method for working magnetic head | |
| JPS59210A (en) | Working method of piezoelectric plate | |
| JP2021070173A (en) | Wafer manufacturing method | |
| JPH01215510A (en) | Slicing method of fragile material | |
| JPH0413094B2 (en) | ||
| JPS58120397A (en) | Production of ultrasonic probe | |
| JPS63160257A (en) | Semiconductor device and manufacture thereof | |
| JPH0516659B2 (en) | ||
| JPH11328642A (en) | Manufacture for magnetic head | |
| JPS6226183B2 (en) | ||
| JPS6377651A (en) | Production of magnetic head | |
| Levinson | Dicing Trough Hard and Brittle Materials in the Micro Electronic Industry | |
| JPH06254841A (en) | Method for recovering of semiconductor water |