JPH06254841A - Method for recovering of semiconductor water - Google Patents

Method for recovering of semiconductor water

Info

Publication number
JPH06254841A
JPH06254841A JP4359493A JP4359493A JPH06254841A JP H06254841 A JPH06254841 A JP H06254841A JP 4359493 A JP4359493 A JP 4359493A JP 4359493 A JP4359493 A JP 4359493A JP H06254841 A JPH06254841 A JP H06254841A
Authority
JP
Japan
Prior art keywords
wafers
wafer
holding plate
cut
cutting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4359493A
Other languages
Japanese (ja)
Other versions
JP2564084B2 (en
Inventor
Tsutomu Sato
勉 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Naoetsu Electronics Co Ltd
Original Assignee
Naoetsu Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Naoetsu Electronics Co Ltd filed Critical Naoetsu Electronics Co Ltd
Priority to JP5043594A priority Critical patent/JP2564084B2/en
Publication of JPH06254841A publication Critical patent/JPH06254841A/en
Application granted granted Critical
Publication of JP2564084B2 publication Critical patent/JP2564084B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To provide a method wherein breakage generated by bringing a blade edge of a slicer into contact with the crosssection of a wafer is prevented from occurring and two pieces of wafers divided by cutting are recoverable together. CONSTITUTION:In a cutting process wherein a silicon semiconductor wafer W is cut into two pieces from the center of the thickness by means of an inner peripheral slicer B, after the wafers under a condition where they are cut to the reinforcing part P by means of the inner peripheral slicer B are supported respectively by means of an independent supporting stage 1 and 2, the wafers are completely cut and divided and the wafers W1 and W2 are moved to the central part C of the inner peripheral slicer B under a condition where a specified distance is held between the wafers W1 and W2 and water is sprayed between both wafers W and cut faces of both wafers W are brought into contact with each other and the tightly contacted and integrated both wafers are pinched by means of a pinching body to recover two pieces together.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明はシリコン半導体ウエハ
の回収方法に関し、さらに詳しくは、シリコン半導体ウ
エハを内周式スライサーにより厚み方向から2分割に切
断する際において、切断により分割された個々のウエハ
を傷つけることなく合理的に回収する方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for recovering a silicon semiconductor wafer, and more particularly, when a silicon semiconductor wafer is cut into two parts in the thickness direction by an inner peripheral slicer, the individual wafers are cut by cutting. It relates to a method of rational recovery without damaging.

【0002】[0002]

【従来の技術】従来、シリコン半導体ウエハの表裏両面
に不純物拡散層を形成し、その後の加工を経てディスク
リート用基板を製造する際の加工方法として、上記シリ
コン半導体ウエハをその厚さ中心から内周式スライサー
により2分割に切断して2枚のディスクリート用基板を
得る、所謂「2枚取り」の具体的な加工方法は2つに大
別できる。その一つは、拡散済みのウエハを多数枚密着
接着して通常のシリコンインゴットのような柱状と成
し、これを内周式スライサーで1枚ずつ連続に切断する
方法、又はワイヤーソウで同時に切断する方法であり、
もう一つは、拡散済みのウエハを内周式スライサーによ
り枚葉式に切断する方法である。本発明は後者の方法に
関するもので、その基本的加工思想は特開昭55−10
370号、さらには、特開昭64−19729号に開示
されている。しかしながら、上記した発明においては、
2枚取り加工を量産規模で実施する為に不可欠であるウ
エハの供給と加工ウエハの回収を行なう方法が具体的に
開示されていない。
2. Description of the Related Art Conventionally, as a processing method for forming a discrete substrate by forming impurity diffusion layers on both front and back surfaces of a silicon semiconductor wafer, the above silicon semiconductor wafer is processed from its thickness center to its inner periphery. A specific processing method of so-called “two-piece cutting”, in which two discrete substrates are obtained by cutting into two pieces with a type slicer, can be roughly classified into two. One of them is to form a pillar like an ordinary silicon ingot by closely adhering a large number of diffused wafers, and cut them one by one with an inner peripheral slicer, or with a wire saw at the same time. Is the way to
The other is a method of cutting a diffused wafer into single wafers by an inner peripheral slicer. The present invention relates to the latter method, the basic processing concept of which is JP-A-55-10.
No. 370, and JP-A No. 64-19729. However, in the above invention,
It does not specifically disclose a method of supplying a wafer and collecting a processed wafer, which are indispensable for carrying out the two-piece processing on a mass production scale.

【0003】[0003]

【発明が解決しようとする課題】上記したように拡散処
理したウエハを2枚取り加工する際においては、1枚の
ウエハを切断して2枚に分割することから、回収側のウ
エハキャリアの溝数が供給側ウエハキャリアの溝数の倍
になりウエハキャリア間のスペースとその移動のため、
切断加工装置の大型化を招いてしまう。この対策として
は、回収側のウエハキャリア1溝に分割したウエハを2
枚ずつ回収する方法が合理的である。図8は上記した回
収方法を実施し得る従来の切断加工装置を示している。
図中101はポーラセラミックスからなる保持盤であ
り、両面に拡散層Waを形成したウエハWを吸引保持
し、チャックボディ104により緊張されたブレードB
の回転中心線C上に位置する(図中イ)。加工時におい
て上記保持盤101はブレードB内周の刃先B1へ向け
て移動しながらウエハWの厚さ中心を切断し、図中
(ロ)にて示すように補強部Pにまで切り込んだ時に切
断を止め、始点である回転中心へ向けて移動する。その
後、保持板101は回転中心線Cに沿って所定距離Lリ
トラクトし(図中ハ)、保持部Pを介して連結する2枚
のウエハW1,W2をウエハ回収機構(図示せず)によ
って一緒に回収する。
When processing two wafers that have been subjected to diffusion processing as described above, one wafer is cut and divided into two wafers. The number is twice the number of grooves on the supply side wafer carrier, and because of the space between the wafer carriers and their movement,
This leads to an increase in the size of the cutting device. As a countermeasure against this, a wafer carrier on the recovery side is divided into two grooves and two wafers.
It is rational to collect them one by one. FIG. 8 shows a conventional cutting and processing apparatus that can carry out the above-described recovery method.
In the figure, 101 is a holding plate made of polar ceramics, which holds a wafer W having diffusion layers Wa formed on both sides by suction, and a blade B which is tensioned by a chuck body 104.
It is located on the rotation center line C of (a in the figure). During processing, the holding plate 101 cuts the thickness center of the wafer W while moving toward the blade edge B1 on the inner circumference of the blade B, and cuts when cut into the reinforcing portion P as shown by (B) in the figure. Stop and move toward the center of rotation, which is the starting point. After that, the holding plate 101 retracts a predetermined distance L along the rotation center line C (C in the figure), and the two wafers W1 and W2 connected via the holding section P are put together by a wafer collecting mechanism (not shown). To collect.

【0004】しかしながら、上記した切断加工装置にあ
っては、ウエハWを移動させながら回転するブレードB
により厚さ中心から2分割に切断した後、全く同じ経路
を戻ってウエハW1,W2の間からブレードBを引き抜
かなければならない。よって、戻り行程中において、そ
れまで切断抵抗を受けて撓んでいたブレード刃先B1が
抵抗から開放させて戻り、ウエハW1の切断面に接触し
て著しく傷つけてしまうことがあった。従って、上記し
た切断加工を行なうには、ウエハの切断厚みにブレード
による損傷分の厚みを加える必要が生じ、この分が余計
な材料ロスとなっていた。
However, in the above cutting apparatus, the blade B which rotates while moving the wafer W is used.
The blade B must be pulled out from between the wafers W1 and W2 after returning to the same path after being cut in two from the center of thickness by. Therefore, during the return stroke, the blade edge B1 that has been bent due to the cutting resistance until then is released from the resistance and returns to the cutting edge of the wafer W1 and may be significantly damaged. Therefore, in order to perform the above-mentioned cutting process, it is necessary to add the thickness of the damage due to the blade to the cutting thickness of the wafer, and this amount causes an extra material loss.

【0005】本発明は上記した如き問題に鑑みなされた
ものであり、シリコン半導体ウエハを内周式スライサー
により厚さ中心から2分割に切断する際において、スラ
イサーのブレード刃先とウエハ断面との接触により破損
を防止すると共に、切断して分割した2枚のウエハを一
緒に回収し得る方法を提供することを目的とする。
The present invention has been made in view of the above problems, and when a silicon semiconductor wafer is cut into two parts from the center of thickness by an inner peripheral type slicer, the blade edge of the slicer and the wafer cross section contact each other. An object of the present invention is to provide a method capable of preventing damage and recovering two wafers cut and divided together.

【0006】[0006]

【課題を解決するための手段】上記した課題を解決する
ために、本発明の半導体ウエハの回収方法は、半導体ウ
エハを内周式スライサーのブレードにより厚み中心から
切断して2枚に分割する切断加工において、上記半導体
ウエハの片面を保持盤により保持し、このウエハを内周
式スライサーのブレードにより切断を開始し、その途中
で該ウエハのもう一方の面を副保持盤により保持しなが
ら切断を完了させた後、上記保持盤と副保持盤とを離間
させて対向するウエハの間に所定の距離を維持し、その
まま両ウエハを内周式スライサーのブレード中心部に相
対移動させ、対面する両ウエハの切断面に水を噴霧した
上でその切断面同士を当接させ、水を介して密着一体化
した両ウエハを保持盤及び副保持盤に代わって挟持体に
より挟持し2枚一緒に回収するものである。また、上記
半導体ウエハが切断終了端側に補強部を有し、前記スラ
イサーのブレードによる切断が前記補強部を切断する途
中で副保持盤によりウエハの他面が保持され、その後に
切断が完了するようにしてもよい。上記シリコン半導体
ウエハは、両面に厚さ方向に不均一で、かつ厚み中心に
対して対称的な材質的特質を有する加工がなされている
ものである。
In order to solve the above-mentioned problems, a method of recovering a semiconductor wafer according to the present invention is a cutting method in which a semiconductor wafer is cut from a center of its thickness by a blade of an inner peripheral type slicer and divided into two pieces. In the processing, one side of the semiconductor wafer is held by a holding plate, the wafer is started to be cut by the blade of the inner peripheral type slicer, and the other side of the wafer is held while being held by the auxiliary holding plate. After the completion, the holding plate and the sub-holding plate are separated from each other to maintain a predetermined distance between the opposing wafers, and both wafers are relatively moved to the central portion of the blade of the inner peripheral type slicer, and the two facing wafers are opposed to each other. Water is sprayed on the cut surfaces of the wafers, the cut surfaces are brought into contact with each other, and the two wafers that are closely adhered and integrated via water are sandwiched by a sandwiching body instead of the holding plate and the sub-holding plate. It is intended to recover to. Further, the semiconductor wafer has a reinforcing portion on the cutting end side, and the other surface of the wafer is held by the sub-holding plate during cutting by the blade of the slicer while cutting the reinforcing portion, and then the cutting is completed. You may do it. The above-mentioned silicon semiconductor wafer is processed to have non-uniformity in the thickness direction on both sides and to have a material characteristic symmetrical with respect to the center of thickness.

【0007】[0007]

【作用】以上の手段によれば、内周式スライサーにより
厚みの中心から切断されるウエハは、外周の補強部まで
切断された時点で両面を保持盤と副保持盤とにより別々
に保持される。保持盤及び副保持盤は上記ウエハが完全
に分割切断された時点で離間し、2分割されたウエハの
間に所定の離間距離を置いてスライサーのブレード刃先
が両ウエハの切断面に接触するのを防止する。そして、
各々の保持盤は両ウエハを離間距離をおいて対向させた
状態のまま移動し、スライサーのブレードから両ウエハ
を引き抜くと同時に、両ウエハを内周式スライサーのブ
レード中心まで相対的に移動させる。尚、ウエハの移動
はブレードに対して保持盤を移動することによって行な
っても、若しくは保持盤に対してブレードを移動するこ
とによって行なってもよい。その後、両ウエハの切断面
の間に水が噴霧され、切断面同士が当接される。両ウエ
ハは噴霧した水による表面張力と付着性によりぴったり
と密着して一体化する。切断後の両ウエハは拡散層の影
響で相反する方向に反り変形を生じているが、上記した
ように水を介して密着させることにより両ウエハの反り
が相殺されて平板状となる。密着した2枚のウエハは保
持盤に代わって挟持体により挟持され、密着した状態で
2枚一緒に回収される。
According to the above means, the wafer cut from the center of the thickness by the inner slicer is held by the holding plate and the sub-holding plate separately on both sides at the time when the wafer is cut to the reinforcing portion on the outer circumference. . The holding plate and the sub-holding plate are separated when the wafer is completely divided and cut, and the blade edge of the slicer comes into contact with the cut surfaces of the two wafers with a predetermined separation distance between the divided wafers. Prevent. And
Each holding plate moves both wafers while facing each other with a separation distance therebetween, and pulls both wafers out from the blade of the slicer, and at the same time, relatively moves both wafers to the center of the blade of the inner peripheral type slicer. The wafer may be moved by moving the holding plate with respect to the blade, or by moving the blade with respect to the holding plate. After that, water is sprayed between the cut surfaces of both wafers, and the cut surfaces are brought into contact with each other. Both wafers are closely adhered and integrated by the surface tension and adhesiveness of the sprayed water. The two wafers after cutting are warped and deformed in opposite directions due to the influence of the diffusion layer. However, when the wafers are brought into close contact with each other via water, the warps of the two wafers are offset to form a flat plate shape. The two closely attached wafers are sandwiched by a sandwiching body instead of the holding plate, and the two closely attached wafers are collected together.

【0008】[0008]

【発明の効果】本発明は以上説明したように、内周式ス
ライサーにより厚み中心から完全に切断分割した両ウエ
ハを保持盤と副保持盤とにより別々に保持し、所定距離
離間させてから内周式スライサーの中心部へ向けて移動
させるものであるから、スライサーによる切断の後にブ
レードがウエハの切断面に接触して破損する現象を防止
することができる。これによれば、切断加工後に行なう
研削加工において研削する研削代の中から、従来必要と
していたブレードによる破損分の厚さが不要となり、そ
の分の材料ロスを削減することができる。また、2枚に
分割したウエハの切断面に水を噴霧して密着させること
により、相反する方向に反り変形を生じる両ウエハを平
板状に密着させ、このウエハを挟持体により2枚一緒に
回収するようにしたので、2枚のウエハを無理なく一緒
に回収することができ、その結果、ウエハの回収機構の
構造を簡素化し、切断加工装置をコンパクトにまとめて
省スペース化することが可能となる。さらに、単体のウ
エハキャリアに対して通常の倍のウエハを収納させるこ
とが可能であるから、ウエハキャリアに収納した後に各
キャリア単位で行なう酸希釈水による補強部の剥離及び
粗洗浄行程の能率を大幅に向上させることができる。
As described above, according to the present invention, both wafers completely cut and divided from the center of thickness by the inner peripheral type slicer are separately held by the holding plate and the sub-holding plate and are separated by a predetermined distance. Since it is moved toward the center of the circumferential slicer, it is possible to prevent the phenomenon that the blade comes into contact with the cut surface of the wafer and is damaged after the cutting by the slicer. According to this, from the grinding allowance to be ground in the grinding process performed after the cutting process, the thickness required for the damage by the blade, which has been conventionally required, becomes unnecessary, and the material loss can be reduced accordingly. In addition, by spraying water onto the cut surfaces of the two divided wafers to bring them into close contact, the two wafers that are warped and deformed in opposite directions are brought into close contact with each other in a flat plate shape, and the two wafers are collected together by the sandwiching body. By doing so, it is possible to recover two wafers together without difficulty, and as a result, it is possible to simplify the structure of the wafer recovery mechanism and to consolidate the cutting apparatus to save space. Become. Further, since it is possible to store twice as many wafers as a single wafer carrier, it is possible to improve the efficiency of the stripping of the reinforced portion by acid dilution water and the rough cleaning process performed for each carrier after storing the wafer in the wafer carrier. It can be greatly improved.

【0009】[0009]

【実施例】以下、本発明によるウエハの回収方法を図面
に基づいて説明する。図1乃至図5はシリコン半導体ウ
エハWの切断加工装置を示している。同装置は、両面に
拡散層を形成したウエハWを保持盤1によって保持し、
このウエハWを内周式スライサーのブレードBによって
厚さ中心から切断して2枚に分割すると共に、分割した
両ウエハW1,W2を水の噴霧により一枚状に密着させ
た後、保持盤1上のウエW1,W2を挟持体3により2
枚一緒に回収し、ウエハキャリア(図示せず)に収納す
るものである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of recovering a wafer according to the present invention will be described below with reference to the drawings. 1 to 5 show a cutting and processing apparatus for a silicon semiconductor wafer W. The apparatus holds a wafer W having a diffusion layer formed on both sides by a holding plate 1,
The wafer W is cut from the center of thickness by a blade B of an inner peripheral type slicer to be divided into two pieces, and the divided wafers W1 and W2 are brought into close contact with each other by spraying water. The upper body W1 and W2 are 2 by the holding body 3.
The wafers are collected together and stored in a wafer carrier (not shown).

【0010】内周式スライサーのブレードBは図1にて
示すようにドーナッツ形の円盤であり、内周縁部に沿っ
てダイヤモンド粒子を電着させてなるブレード刃先B1
を構成し、チャックボディ4により緊張して回転自在に
支持してある。上記ブレードBの回転中心Cに位置した
保持盤1はポーラスセラミックスからなる円形台であ
り、平坦な真空吸引面にてウエハWを吸引保持する。ま
た保持盤1は移動ベース上をブレードBへ向けて水平に
移動すると共に、回転中心軸Cに沿って設定距離Lの範
囲で移動可能である。
The blade B of the inner peripheral type slicer is a donut-shaped disk as shown in FIG. 1, and a blade edge B1 formed by electrodepositing diamond particles along the inner peripheral edge.
And is rotatably supported by the chuck body 4. The holding plate 1 located at the rotation center C of the blade B is a circular base made of porous ceramics, and holds the wafer W by suction on a flat vacuum suction surface. Further, the holding plate 1 can move horizontally on the moving base toward the blade B, and can also move within the range of the set distance L along the rotation center axis C.

【0011】上記した保持盤1に対向して吸盤式の副保
持盤2が移動自在なアーム20の先端部に複数設置して
ある。これら副保持盤2は保持盤1と同じ移動ベース上
に設置され、保持盤1と共に一体的に移動する。副保持
盤2は、図6にて示すように、吸着パット21と嵌合一
体化する摺動管24を吸引管26に螺着した中空状の基
螺22内に対して摺動自在に嵌挿すると共に、上記基螺
22と摺動管24の鍔部24aとの間を連結するように
袋ナット23を螺嵌し、該袋ナット23の内部にコイル
スプリング25を弾装して構成される。よって、後述す
るように副保持盤2をウエハWに対して上方から当接さ
せる時や、分割したウエハW2をW1に対して密着させ
る際に、コイルスブリング25の圧縮により吸着パット
21が弾性的に後退し、ウエハWに対して無理な負荷を
与えることの無いようになっている。また、上記副保持
盤2はアーム20の先端部に並列させた状態で設けてあ
るが、個々の副保持盤2は図1にて示すように幾分傾斜
させた状態で取り付けてある。この傾斜は、切断により
変形するウエハW2の反りに合わせて両副保持盤2の吸
着パット21をあてがうための配慮である。
A plurality of sucker type sub-holding plates 2 are installed at the tip of the movable arm 20 so as to face the holding plate 1. These sub holding plates 2 are installed on the same moving base as the holding plate 1 and move integrally with the holding plate 1. As shown in FIG. 6, the sub-holding board 2 is slidably fitted into a hollow base screw 22 in which a sliding tube 24 that is integrally fitted with the suction pad 21 is screwed to a suction tube 26. While being inserted, a cap nut 23 is screwed so as to connect the base screw 22 and the collar portion 24a of the sliding tube 24, and a coil spring 25 is mounted inside the cap nut 23. It Therefore, as will be described later, when the auxiliary holding plate 2 is brought into contact with the wafer W from above or when the divided wafer W2 is brought into close contact with W1, the suction pad 21 is elastically compressed by the compression of the coil subring 25. , So that an unreasonable load is not applied to the wafer W. The sub-holding board 2 is provided in parallel with the tip of the arm 20, but the individual sub-holding boards 2 are attached in a slightly inclined state as shown in FIG. This inclination is a consideration for applying the suction pads 21 of both sub-holding plates 2 according to the warp of the wafer W2 which is deformed by cutting.

【0012】上記した切断加工装置は切断分割したウエ
ハW1,W2を回収する際に使用する噴霧ノズル5と挟
持体3を具備している。噴霧ノズル5は副保持盤2のア
ーム20に取り付けられ、切断分割したウエハW1,W
2の間に向けて水を噴霧する。挟持体3は水の噴霧によ
り一枚状に密着させた両ウエハW1,W2を保持盤1よ
り回収して回収用のウエハキャリア(図示せず)の溝に
収納するものであり、2本の挟持片3aの間にウエハW
1,W2の縁部を挟持するように構成してある。尚、保
持盤1の周縁部に切欠した溝1aは挟持体3の挟持片3
aを挿入する為のものである。
The above-described cutting apparatus is provided with a spray nozzle 5 and a holding body 3 which are used when collecting the cut and divided wafers W1 and W2. The spray nozzle 5 is attached to the arm 20 of the auxiliary holding plate 2 and cut and divided into the wafers W1 and W.
Spray water between two. The holding body 3 collects both the wafers W1 and W2 that are brought into close contact with each other by spraying water from the holding plate 1 and stores them in a groove of a wafer carrier (not shown) for collection. The wafer W is held between the sandwiching pieces 3a.
It is configured to hold the edges of 1 and W2. It should be noted that the groove 1a cut out in the peripheral portion of the holding plate 1 is used as the holding piece 3 of the holding body 3.
It is for inserting a.

【0013】以下、上記の如く構成した切断加工装置に
て行なうウエハの2枚取り加工と、切断されたウエハW
1,W2の回収方法を行程順に説明する。切断加工する
ウエハWは、図7にて示すように、厚さ1ミリ程度のシ
リコン半導体ウエハ外周の一部にカーボンあるいはシリ
コン、エポキシ樹脂等からなる補強部Pを形成したもの
である。上記ウエハWは未拡散層Wbを挟んで両面に拡
散層Waが形成され、厚さ中心Wcを基準とし、切断し
て2分割することにより、片面が未拡散層、もう片面が
拡散層からなる2枚のディスクリート用基板を得る。
In the following, two wafers are cut by the cutting apparatus having the above-described structure, and the cut wafer W is cut.
A method of collecting 1, W2 will be described in the order of steps. As shown in FIG. 7, the wafer W to be cut has a reinforcing portion P made of carbon, silicon, epoxy resin or the like formed on a part of the outer periphery of a silicon semiconductor wafer having a thickness of about 1 mm. Diffusion layers Wa are formed on both sides of the wafer W with an undiffused layer Wb sandwiched between them. One side of the wafer W is an undiffused layer and the other side is a diffused layer by dividing the wafer W into two parts based on the thickness center Wc. Two discrete substrates are obtained.

【0014】図1にて示すように、ウエハ供給機構(図
示せず)により保持盤1の上に供給されたウエハWはポ
ーラセラミックスの多孔を介して加えられる吸引力によ
り保持される。この時、ウエハW及び保持盤1は内周式
スライサーのブレードB中心Cに位置し、さらにウエハ
Wの厚さ中心Wcがブレード刃先B1のレベルと正確に
一致している。上記保持盤1は、ブレード刃先B1の直
前まで水平に高速移動し、ブレード刃先B1がウエハW
の厚さ中心に接触する直前において切断に適した速度に
減速し、この速度を維持しながら切断は進行される。
As shown in FIG. 1, the wafer W supplied onto the holding plate 1 by the wafer supply mechanism (not shown) is held by the suction force applied through the porous ceramics. At this time, the wafer W and the holding plate 1 are positioned at the center C of the blade B of the inner peripheral type slicer, and the thickness center Wc of the wafer W exactly matches the level of the blade edge B1. The holding plate 1 moves horizontally at a high speed right before the blade edge B1 and the blade edge B1 moves to the wafer W.
Immediately before contacting the thickness center of the, the speed is reduced to a speed suitable for cutting, and the cutting is continued while maintaining this speed.

【0015】ブレード刃先B1がウエハWを2分割切断
して外周部の補強部Pの中程まで進行した時、上方のウ
エハW2に対して副保持盤2を移動せしめて吸着保持す
る(図2)。その直後、ブレード刃先B1により補強部
Pが切断されてウエハW1,W2が完全に分割された
時、保持盤1と副保持盤2が図中の下方及び上方に各々
若干量移動する(図3)。これによって、両ウエハW
1,W2が所定距離離間し、両ウエハW1,W2の切断
面とブレード刃先B1との間に接触を回避する為の安全
距離が保たれる。次いで、上記保持盤1及び副保持盤2
はウエハW1,W2間に所定の離間距離を保った状態の
ままブレードB中心Cへ向けて移動する。
When the blade edge B1 cuts the wafer W in two and advances to the middle of the reinforcing portion P at the outer peripheral portion, the auxiliary holding plate 2 is moved and held by suction with respect to the upper wafer W2 (FIG. 2). ). Immediately thereafter, when the reinforcing portion P is cut by the blade edge B1 and the wafers W1 and W2 are completely divided, the holding plate 1 and the sub-holding plate 2 move slightly downward and upward in the figure (FIG. 3). ). As a result, both wafers W
1 and W2 are separated by a predetermined distance, and a safe distance for avoiding contact between the cut surfaces of the wafers W1 and W2 and the blade edge B1 is maintained. Next, the holding plate 1 and the sub holding plate 2
Moves toward the center C of the blade B while maintaining a predetermined separation distance between the wafers W1 and W2.

【0016】図4にて示すように、ブレードB中心Cま
で移動したウエハW1,W2の間には噴霧ノズル5から
水が噴霧され、両ウエハW1,W2の切断面に適量の水
が添着する。次いで副保持盤2によって保持していたウ
エハW2を移動させ、保持盤1のウエハW1の上に当接
させた後、その状態を維持したまま保持盤1及び副保持
盤2をブレードB中心Cに沿って所定距離Lリトラクト
する(図5)。尚、上記したように副保持盤2を移動さ
せてウエハW2をウエハW1に対して当接させる際に
は、既述した如く両副保持盤2の吸着パット21が所定
ストロークの範囲で弾性的に後退し、これにより傾斜を
つける為に生じていた両副保持盤2間の突出量が吸収さ
れて、ウエハW2をウエハW1に対して無理のないよう
平面的に当接させることができる。
As shown in FIG. 4, water is sprayed from the spray nozzle 5 between the wafers W1 and W2 that have moved to the center C of the blade B, and an appropriate amount of water is attached to the cut surfaces of both wafers W1 and W2. . Next, the wafer W2 held by the sub-holding plate 2 is moved and brought into contact with the wafer W1 of the holding plate 1, and then the holding plate 1 and the sub-holding plate 2 are moved to the blade B center C while maintaining the state. A predetermined distance L is retracted along (FIG. 5). When the sub-holding plates 2 are moved to bring the wafer W2 into contact with the wafer W1 as described above, the suction pads 21 of both sub-holding plates 2 are elastic within a predetermined stroke range as described above. The amount of protrusion between the auxiliary holding discs 2 that is generated due to the inclination is absorbed, and the wafer W2 can be brought into planar contact with the wafer W1 without any difficulty.

【0017】図5にて示すように、当接する両ブレード
W1,W2は、噴霧された水による表面張力と付着性に
よりぴったりと密着して一体化する。切断した後の両ウ
エハW1,W2は相反する方向に反り変形を生じるが、
上記したように水を介して両ウエハW1,W2を密着さ
せることによれば両ウエハW1,W2に生じていた反り
が相殺され、あたかも一枚のウエハのように平板状に密
着する。
As shown in FIG. 5, the abutting blades W1 and W2 are closely and integrally integrated due to the surface tension and adhesiveness of the sprayed water. After the cutting, both wafers W1 and W2 are warped and deformed in opposite directions.
As described above, by bringing the two wafers W1 and W2 into close contact with each other via water, the warpage that has occurred in the two wafers W1 and W2 is offset, and the wafers W1 and W2 are brought into close contact with each other in a flat plate shape as if they were one wafer.

【0018】挟持体3によりウエハW1,W2を回収す
る為図5にて示す状態までリトラクトさせた保持盤1及
び副保持盤2は、ウエハW1,W2に加えていた吸引力
を止めて保持力を解除し、同時に挟持体3を側方から接
近させ、保持盤1の上に密着した状態で置かれるウエハ
W1,W2の周縁部を挟持して2枚一緒に取り上げる。
そして、挟持対3は所定の移動ベースに沿って移動した
後、挟持したウエハW1,W2を回収用のウエハキャリ
ア(図示せず)の溝に挿入して収納する。
The holding plate 1 and the sub-holding plate 2 retracted to the state shown in FIG. 5 to collect the wafers W1 and W2 by the holding body 3 stop the suction force applied to the wafers W1 and W2 and hold them. Then, the sandwiching body 3 is approached from the side at the same time, and the peripheral portions of the wafers W1 and W2 placed in close contact with each other on the holding plate 1 are sandwiched and picked up together.
Then, the sandwiching pair 3 moves along a predetermined moving base, and then inserts the sandwiched wafers W1 and W2 into the groove of a wafer carrier for recovery (not shown) to store them.

【0019】以上の回収方法によれば、切断加工後にお
けるブレード刃先B1と両ウエハW1,W2の切断面と
の接触を防止することができると共に、水の噴霧によっ
て密着させたウエハW1,W2を2枚一緒に回収してウ
エハキャリアの溝に収納することかできる利点がある。
さらに、回収用ウエハキャリアの溝に通常の倍のウエハ
を収納することができるので、切断加工の後に行なう酸
希釈水による補強部Pの剥離及び粗洗浄行程の作業能率
を向上させることができる。尚、上述した実施例はスラ
イサーのブレードを垂直方向回転自在に配置させた横型
装置として説明したが、ブレードを水平に配置させる縦
型装置とすることも任意であり、また両面に拡散層を形
成したシリコン半導体ウエハを対象に説明したが、被加
工物となる半導体ウエハは両面にダミーウエハを溶着し
たSOI用素材ウエハ等であってもよい。
According to the above recovery method, it is possible to prevent contact between the blade edge B1 and the cut surfaces of the two wafers W1 and W2 after cutting, and at the same time, to attach the wafers W1 and W2 that are brought into close contact with each other by spraying water. There is an advantage that two wafers can be collected together and stored in the groove of the wafer carrier.
Further, since twice as many wafers as usual can be stored in the groove of the recovery wafer carrier, it is possible to improve the work efficiency of the peeling of the reinforcing portion P by the acid dilution water and the rough cleaning process performed after the cutting process. Although the above-described embodiment has been described as a horizontal device in which the blades of the slicer are rotatably arranged in the vertical direction, a vertical device in which the blades are horizontally arranged is also optional, and a diffusion layer is formed on both surfaces. However, the semiconductor wafer to be processed may be an SOI material wafer or the like in which dummy wafers are welded on both sides.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本願発明を実施する切断加工装置を示す正
面図。
FIG. 1 is a front view showing a cutting apparatus for carrying out the present invention.

【図2】 ウエハを補強部まで切断した状態を示す同
装置の正面図。
FIG. 2 is a front view of the same apparatus showing a state in which a wafer is cut to a reinforcing portion.

【図3】 切断した両ウエハを離間させた状態を示す
同装置の正面図。
FIG. 3 is a front view of the same device showing a state where the cut wafers are separated from each other.

【図4】 対向する両ウエハの間に水を噴霧している
状態を示す同装置の正面図。
FIG. 4 is a front view of the apparatus showing a state in which water is sprayed between the two opposing wafers.

【図5】 保持盤をリトラクトして切断した両ウエハ
を密着させた状態を示す同装置の正面図。
FIG. 5 is a front view of the apparatus showing a state in which both wafers, which have been cut by retracting the holding plate, are brought into close contact with each other.

【図6】 副保持盤を示す縦断面図。FIG. 6 is a vertical sectional view showing a sub holding plate.

【図7】 ウエハの拡大縦断面図。FIG. 7 is an enlarged vertical sectional view of a wafer.

【図8】 従来の切断加工装置による切断加工行程を
示す概略図。
FIG. 8 is a schematic view showing a cutting process by a conventional cutting device.

【符号の説明】[Explanation of symbols]

B・・・ブレード B1・・・ブレード刃先 C・・・ブレード中心 W・・・ウエハ W1,W2・・・ウエハ(切断されたウエハ) Wa・・・拡散層 P・・・補強部 1・・・保持盤 2・・・副保持盤 3・・・挟持体 B ... Blade B1 ... Blade edge C ... Blade center W ... Wafer W1, W2 ... Wafer (cut wafer) Wa ... Diffusion layer P ... Reinforcing part 1 ..・ Holding board 2 ・ ・ ・ Sub-holding board 3 ・ ・ ・ Clamping body

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体ウエハを内周式スライサーのブ
レードにより厚み中心から切断して2枚に分割する切断
加工において、上記半導体ウエハの片面を保持盤により
保持し、このウエハを内周式スライサーのブレードによ
り切断を開始し、その途中で該ウエハのもう一方の面を
副保持盤により保持しながら切断を完了させた後、上記
保持盤と副保持盤とを離間させて対向するウエハの間に
所定の距離を維持し、そのまま両ウエハを内周式スライ
サーのブレード中心部に相対移動させ、対面する両ウエ
ハの切断面に水を噴霧した上でその切断面同士を当接さ
せ、水を介して密着一体化した両ウエハを保持盤及び副
保持盤に代わって挟持体により挟持し2枚一緒に回収す
る半導体ウエハの回収方法。
1. A cutting process in which a semiconductor wafer is cut from the center of thickness by a blade of an inner peripheral type slicer and divided into two pieces, and one side of the semiconductor wafer is held by a holding plate, and this wafer is cut by an inner peripheral type slicer. After the cutting is started by the blade and the cutting is completed while the other surface of the wafer is held by the auxiliary holding plate in the middle of the cutting, the holding plate and the auxiliary holding plate are separated from each other between the facing wafers. While maintaining a predetermined distance, move both wafers relative to the center of the inner peripheral slicer blade, spray the water on the cut surfaces of the two facing wafers, and then bring the cut surfaces into contact with each other. A method for collecting semiconductor wafers, in which both wafers that have been brought into close contact with each other are held by a holding body instead of the holding plate and the auxiliary holding plate and are collected together.
【請求項2】 上記半導体ウエハが切断終了端側に補
強部を有し、前記スライサーのブレードによる切断が前
記補強部を切断する途中で副保持盤によりウエハの他面
が保持され、その後に切断が完了する請求項1記載の半
導体ウエハの回収方法。
2. The semiconductor wafer has a reinforcing portion on the cutting end side, and the other surface of the wafer is held by a sub-holding plate during cutting by the blade of the slicer while cutting the reinforcing portion, and then cut. The method for collecting a semiconductor wafer according to claim 1, wherein the process is completed.
【請求項3】 上記シリコン半導体ウエハは、両面に
厚さ方向に不均一で、かつ厚み中心に対して対称的な材
質的特質を有する加工がなされている請求項1記載の半
導体ウエハの回収方法。
3. The method for recovering a semiconductor wafer according to claim 1, wherein the silicon semiconductor wafer is processed on both surfaces thereof so as to have non-uniformity in a thickness direction and have a material property symmetrical with respect to a thickness center. .
JP5043594A 1993-03-04 1993-03-04 Method of collecting semiconductor wafers Expired - Fee Related JP2564084B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5043594A JP2564084B2 (en) 1993-03-04 1993-03-04 Method of collecting semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5043594A JP2564084B2 (en) 1993-03-04 1993-03-04 Method of collecting semiconductor wafers

Publications (2)

Publication Number Publication Date
JPH06254841A true JPH06254841A (en) 1994-09-13
JP2564084B2 JP2564084B2 (en) 1996-12-18

Family

ID=12668131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5043594A Expired - Fee Related JP2564084B2 (en) 1993-03-04 1993-03-04 Method of collecting semiconductor wafers

Country Status (1)

Country Link
JP (1) JP2564084B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010234749A (en) * 2009-03-31 2010-10-21 Honda Motor Co Ltd Method and device for demolding separator for fuel cell

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7422963B2 (en) * 2004-06-03 2008-09-09 Owens Technology, Inc. Method for cleaving brittle materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010234749A (en) * 2009-03-31 2010-10-21 Honda Motor Co Ltd Method and device for demolding separator for fuel cell

Also Published As

Publication number Publication date
JP2564084B2 (en) 1996-12-18

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