JPS6022481B2 - Manufacturing method of semiconductor porcelain - Google Patents
Manufacturing method of semiconductor porcelainInfo
- Publication number
- JPS6022481B2 JPS6022481B2 JP54072736A JP7273679A JPS6022481B2 JP S6022481 B2 JPS6022481 B2 JP S6022481B2 JP 54072736 A JP54072736 A JP 54072736A JP 7273679 A JP7273679 A JP 7273679A JP S6022481 B2 JPS6022481 B2 JP S6022481B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor porcelain
- manufacturing
- sheet
- large number
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Ceramic Capacitors (AREA)
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
【発明の詳細な説明】
本発明は多数の貫通孔を有する波形をした半導体磁器の
製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing corrugated semiconductor porcelain having a large number of through holes.
本発明の目的は半導体磁器の製造において、焼成の際に
利用できる半導体磁器からなる敷板の製造方法を提供す
るものである。An object of the present invention is to provide a method for producing a base plate made of semiconductor porcelain that can be used during firing in the production of semiconductor porcelain.
一般に、半導体磁器の製造において、半導体磁器粉末か
ら得られる成形体の焼成工程は、重要な工程の1つとさ
れている。従来この成形体を焼成する場合、安定化ジル
コニア板、マグネシア板、アルミナ板が敷板として使用
され、上記成形体はこれら敷板の上に積み重ねるかある
いは成形体の側面の一部が数板主面または薮板主面上に
蒔いた安定化ZrQ粒子と接触するような状態で立てて
且つ成形体の主面同志が互いに向き合うように敷板主両
方向に複数板並べて配置して焼成されていた。後者の方
法に関して言えばこのような方法で競成した場合、得ら
れた半導体磁器は数板あるいは安定化ZrQ粒子と接触
している部分が一部反応し変色したり、変形したりして
均質性に欠け、それが半導体磁器の特性のバラッキにつ
ながるというような問題があった。Generally, in the production of semiconductor porcelain, the firing process of a molded body obtained from semiconductor porcelain powder is considered to be one of the important steps. Conventionally, when firing this molded body, a stabilized zirconia plate, magnesia plate, or alumina plate is used as a base plate, and the molded body is stacked on these base plates, or a part of the side surface of the molded body is A plurality of molded bodies were erected in contact with the stabilized ZrQ particles sown on the main surface of the bush board, and a plurality of molded bodies were arranged and fired in both directions of the main board so that the main surfaces of the molded bodies faced each other. Regarding the latter method, when competitively produced by such a method, the obtained semiconductor porcelain may partially react with several plates or parts that are in contact with the stabilized ZrQ particles, discolor or deform, and become homogeneous. There was a problem in that it lacked properties, which led to variations in the properties of the semiconductor porcelain.
また、これを改善するために成形体の焼成時に敷板の上
に、作製しようとする半導体磁器と同組成あるいは類似
組成からなる孫緒板を載せ、その上に成形体を配置して
焼成していた。しかし、この場合成形体を固定させる必
要があり、またその作業性も悪かった。本発明は上記従
来の問題点を解消し、数板として広範囲に利用できる半
導体磁器の製造方法を提供するものであり、半導体磁器
粉末と有機バインダーとからシートを作製し、該シート
を打ち抜いて多数の貫通孔を設けた後、該多数の貫通孔
を設けたシートを波形状に成形して乾燥し、焼成する事
を特徴とするものである。In addition, in order to improve this, when firing the molded product, a metal plate made of the same or similar composition as the semiconductor porcelain to be manufactured is placed on the base plate, and the molded product is placed on top of it and fired. Ta. However, in this case, it was necessary to fix the molded body, and the workability was also poor. The present invention solves the above-mentioned conventional problems and provides a method for manufacturing semiconductor porcelain that can be widely used as several plates, in which a sheet is made from semiconductor porcelain powder and an organic binder, and the sheet is punched out to form a large number of sheets. After forming the through-holes, the sheet having the large number of through-holes is formed into a wave shape, dried, and fired.
以下、本発明につき実施例をあげ説明する。Hereinafter, the present invention will be described with reference to examples.
まず、市販の工業用原料BaC03,Ti02,SiQ
,Nb2Q,Mn02を出発原料としてBaC031モ
ル、Ti。21モル、Si。22.4モル%,Nb20
50.11モル%,Mn020.07モル%の組成に配
合したものをボールミルで20時間湿式混合した後乾燥
し、1100℃,2時間仮擁する。First, commercially available industrial raw materials BaC03, Ti02, SiQ
, Nb2Q, Mn02 as starting materials, BaC031 mol, Ti. 21 moles, Si. 22.4 mol%, Nb20
A composition of 50.11 mol % and 20.07 mol % of Mn was wet mixed in a ball mill for 20 hours, dried, and temporarily held at 1100° C. for 2 hours.
仮擁した原料をさらにボールミルで緑式粉砕して乾燥さ
せる。次に乾燥した粉末を4雌秤量し、これにポリビニ
ールブチラール、可塑剤としてのジブチルフタレート、
有機溶剤を加えボールミルで濠練してスラリーを作り、
このスラリーからドクタープレード法を使用して約1凧
の厚さのシートを作製する。このシートを一辺が約1瓜
双の正方形に切断し、次いで約4側の直径のパンチャー
を使用し打ち抜く。このようにして得られた多数の貫通
孔を有するシートを波形に形成し乾燥した後、1350
℃で1時間焼成して半導体磁器を作製した。図は本実施
例により作製されたチタン酸バリウム系半導体磁器の斜
視図である。The temporarily retained raw materials are further ground in a green type using a ball mill and dried. Next, 4 pieces of the dried powder were weighed, and polyvinyl butyral, dibutyl phthalate as a plasticizer,
Add an organic solvent and knead with a ball mill to make a slurry.
A sheet approximately 1 kite thick is made from this slurry using the doctor plate method. This sheet is cut into squares of about 1 square inch on each side, and then punched out using a puncher with a diameter of about 4 sides. After forming the thus obtained sheet having a large number of through holes into a corrugated shape and drying it,
Semiconductor porcelain was produced by firing at ℃ for 1 hour. The figure is a perspective view of barium titanate-based semiconductor porcelain manufactured according to this example.
図において、1は半導体磁器であり、これは波形構造を
もち、この波形構造の凹部分に半導体磁器粉末より作製
された成形体を配置するようにしたものであり、その配
置方法として成形体の側面の一部が波形構造の凹部分に
接するように立てて且つ各々の成形体の主面同志が互い
に向きあうように凹部分の凹面方向に並べて配置すれば
多数の成形体が配置でき量産性に富む。また、上記波形
構造の轡曲部分の大きさはその配置しようとする成形体
の大きさに応じてシートから自由に作製できる。さらに
、成形体と同組成の波形半導体磁器を使用する事により
、均質で安定した特性を有する半導体磁器が得られる。
図において、2は貫通孔であり、これは多数設けられて
いる。これを設ける事により、焼成時において成形体へ
熱が伝わり易く、均一焼成ができ、また空気の流通も良
好で再酸化が可能となり、きわめて安定した特性を有す
る半導体磁器が作製できる。また、この波形半導体磁器
は多数回の焼成に使用できるという利点を有する。その
上このような構造のものは、上記チタン酸バリウム系半
導体磁器の製造のみならず、広範囲の半導体磁器の製造
に利用できるものである。以上記述したように本発明の
製造方法による多数の貫通孔を有する波形半導体磁器は
、その組成を任意に変える事により、広範囲にわたって
焼成時における敷板として利用でき、きわめて価値の高
いものである。In the figure, 1 is semiconductor porcelain, which has a waveform structure, and a molded body made of semiconductor porcelain powder is placed in the concave part of this waveform structure. If the molded bodies are erected so that a part of the side surface is in contact with the concave part of the corrugated structure and arranged in the direction of the concave surface of the concave part so that the main surfaces of each molded body face each other, a large number of molded bodies can be arranged and mass production is possible. rich in Further, the size of the curved portion of the above-mentioned wavy structure can be freely prepared from the sheet depending on the size of the molded product to be arranged. Furthermore, by using corrugated semiconductor porcelain having the same composition as the molded body, semiconductor porcelain having homogeneous and stable characteristics can be obtained.
In the figure, 2 is a through hole, and a large number of through holes are provided. By providing this, heat is easily transferred to the molded body during firing, allowing uniform firing, and good air circulation makes reoxidation possible, making it possible to produce semiconductor porcelain with extremely stable properties. Moreover, this corrugated semiconductor porcelain has the advantage that it can be used for multiple firings. Furthermore, such a structure can be used not only for manufacturing the above-mentioned barium titanate-based semiconductor ceramics, but also for manufacturing a wide range of semiconductor ceramics. As described above, the corrugated semiconductor porcelain having a large number of through holes produced by the manufacturing method of the present invention can be used as a base plate during firing over a wide range of areas by arbitrarily changing its composition, and is extremely valuable.
図は本発明の製造方法により作製された半導体磁器の斜
視図である。
1・・・・・・半導体磁器、2・・・・・・貫通孔。The figure is a perspective view of semiconductor porcelain manufactured by the manufacturing method of the present invention. 1... Semiconductor porcelain, 2... Through hole.
Claims (1)
製し、該シートを打ち抜いて多数の貫通孔を設けた後、
該多数の貫通孔を設けたシートを波形状に成形して乾燥
し、焼成する事を特徴とした半導体磁器の製造方法。1. After producing a sheet from semiconductor porcelain powder and an organic binder and punching out the sheet to provide a large number of through holes,
A method for producing semiconductor porcelain, which comprises forming the sheet provided with a large number of through holes into a wave shape, drying it, and firing it.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54072736A JPS6022481B2 (en) | 1979-06-08 | 1979-06-08 | Manufacturing method of semiconductor porcelain |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54072736A JPS6022481B2 (en) | 1979-06-08 | 1979-06-08 | Manufacturing method of semiconductor porcelain |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55163804A JPS55163804A (en) | 1980-12-20 |
JPS6022481B2 true JPS6022481B2 (en) | 1985-06-03 |
Family
ID=13497934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54072736A Expired JPS6022481B2 (en) | 1979-06-08 | 1979-06-08 | Manufacturing method of semiconductor porcelain |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6022481B2 (en) |
-
1979
- 1979-06-08 JP JP54072736A patent/JPS6022481B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS55163804A (en) | 1980-12-20 |
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