JPS60223135A - Resin seal type semiconductor device - Google Patents
Resin seal type semiconductor deviceInfo
- Publication number
- JPS60223135A JPS60223135A JP7894684A JP7894684A JPS60223135A JP S60223135 A JPS60223135 A JP S60223135A JP 7894684 A JP7894684 A JP 7894684A JP 7894684 A JP7894684 A JP 7894684A JP S60223135 A JPS60223135 A JP S60223135A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- mold clamping
- sealing
- radiator
- mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
Description
【発明の詳細な説明】
イ、産業上の利用分野
本発明は、放熱体を’［Ａ的に絶縁した樹脂封止型半導
体装置にかかり、特に、電極以外の金属部分が外部に突
出しない、いわゆる児全絶縁型樹脂封止半導体装置に関
するものでおる。DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to a resin-sealed semiconductor device in which a heat sink is insulated in a manner such that metal parts other than electrodes do not protrude to the outside. The present invention relates to a so-called fully insulated resin-sealed semiconductor device.
口、従来技術
従来、封止樹脂によって放熱体を絶縁化する形式の半導
体装置は、封止時の型じめの必要性から、電極以外に、
樹脂部より突出する金禰部があり、電気回路への実装時
に％該突出部を他部分に触れぬ様配慮する必要がめシ、
また、外部放熱体等を取りつける場合でも、絶縁距離と
の関係から、該突出部分に別途絶縁保饅材′を塗布する
必要があった。Conventional technology Conventionally, semiconductor devices of the type in which the heat dissipation body is insulated with a sealing resin require molding in addition to electrodes due to the necessity of mold tightening during sealing.
There is a metal wire part that protrudes from the resin part, and care must be taken not to touch the protruding part with other parts when mounting it on an electric circuit.
Furthermore, even when an external heat radiator or the like is attached, it is necessary to separately apply an insulation retaining material to the protruding portion due to the insulation distance.
すなわち、第１図はこのような従来の絶縁型半導体装置
の突出部形成の必然性を説明するための、樹脂封止工ｓ
ｔ−示す断面図である。第１図において、ｌは放熱体、
２は半導体素子、３は半導体素子２と外部引出し電極９
との間をつなぐ内部配線。That is, FIG. 1 shows a resin sealing process for explaining the necessity of forming protrusions in such a conventional insulated semiconductor device.
FIG. In Fig. 1, l is a heat sink;
2 is a semiconductor element, 3 is the semiconductor element 2 and external extraction electrode 9
Internal wiring that connects the
４は封止用樹脂が入る樹脂封入空間、５は金型の上屋、
６は下型である。金型５と６とによって外部電極９と型
じめ突出部７とがしめられて位置決めと樹脂もれを防い
でいる。4 is a resin sealing space where the sealing resin is placed, 5 is a mold shed,
6 is the lower mold. The external electrode 9 and the mold retaining protrusion 7 are clamped by the molds 5 and 6 to prevent positioning and resin leakage.
ここで、型じめが、外部引出し電極９のみでなく、型し
め用突起７が必要とされるのは、本来、絶縁物は熱伝導
が悪いので、素子の放熱性能を上げるには、金型６の封
入空間の底面と放熱体ｌの底面との間の隙間８の部分の
樹脂厚をできるだけ薄く、シかも、均一な厚さにしなけ
ればならない。Here, the reason why not only the external extraction electrode 9 but also the mold-clamping protrusion 7 is required is that insulators have poor thermal conductivity, so in order to improve the heat dissipation performance of the element, it is necessary to use mold-clamping protrusions 7. The resin thickness in the gap 8 between the bottom surface of the enclosed space of the mold 6 and the bottom surface of the heat sink 1 must be made as thin as possible and evenly uniform.
そのためには、高圧で押圧されてくる封止用樹脂に対し
、目標通シの成形を行うには、外部引出し電極９のみの
型しめでは不５Ｊ能であり、反対側の型じめ用突出７も
必要となる。その結果、型しめ用突出７０部分は、第２
図の製品斜視図に見られるとお少、樹脂部ｌＯよシ突出
してし１い、上記のような不都合を生じる。For this purpose, it is impossible to mold only the external lead electrode 9 to mold the sealing resin that is pressed under high pressure with the target through-hole. 7 is also required. As a result, the molding protrusion 70 portion
As seen in the perspective view of the product shown in the figure, the resin part 1O protrudes slightly, causing the above-mentioned inconvenience.
このような導体突出の欠点を回避するため、半導体素子
と放熱体との間に絶縁物τはさんだものもめるが、この
ようなものは、部品点数および取付けの工数の増加に加
え、高温に酎える絶縁物の入手難などのため、高価格に
なってしまうという欠点がある。In order to avoid the disadvantage of protruding conductors, it is recommended to insert an insulator τ between the semiconductor element and the heat dissipation body. However, in addition to increasing the number of parts and the number of installation steps, such a method also increases the risk of high temperatures. The drawback is that it is expensive because it is difficult to obtain suitable insulators.
ハ１発明の目的
本発明の目的は、このような従来の絶縁型樹脂封止半導
体装置の欠点を解消し、しかも、安価に製造できる完全
絶縁型の樹脂封止型半導体装置を提供するにある。C1 Purpose of the Invention An object of the present invention is to provide a completely insulated resin-sealed semiconductor device that eliminates the drawbacks of the conventional insulated resin-sealed semiconductor device and can be manufactured at low cost. .
二０発明の構成
本発明によれば、樹脂封止の際の型じめが、放熱体から
引き出されている外部引出し電極部と、封止金型の樹脂
注入空間に突出して放熱体と部分的に嵌合して該放熱体
ケ支持し、樹脂封止後に引き抜くことのできる可動型し
め部材によシ行われて、樹脂封止されてなる樹脂封止型
半導体装置が得られる。20 Structure of the Invention According to the present invention, the molding during resin sealing is reduced between the external lead-out electrode portion drawn out from the heat radiator and the heat radiator and portion protruding into the resin injection space of the sealing mold. A resin-sealed semiconductor device is obtained by fitting and supporting the heat dissipating body with a movable fastening member that can be pulled out after resin-sealing.
ホ、芙施例
つぎに本発明を実施例によシ説明する。第３図は本発明
の一実施例に係る樹脂封止工程を説明するだめの断面図
でるる。第３図において、こｎｆ。EXAMPLE Next, the present invention will be explained by referring to an example. FIG. 3 is a cross-sectional view for explaining the resin sealing process according to an embodiment of the present invention. In FIG. 3, this nf.
第１図の従来例と比べて見ると、第１図における型しめ
突起７０部分に変更がなされていることに違いがオル、
その他は同じである。すなわち、第３図の放熱体の型し
め部分１７は、上金型１５と下金型１６の作る樹脂注入
空間４の側壁までは延びておらず、その代わシ、金型の
方から、可動型じめ部材２０が封入空間４に突出されて
、放熱体の型しめ部分１７と、山形と谷形の嵌合によシ
放熱体１１に支持し、放熱体１ｉｔ−封入空間４内に正
確に位置決めする。しかして、樹脂封止が終った後では
、可動型しめ部材２０を水平に引き抜いてから、封止後
の製品を金型から外へとシ出す。When compared with the conventional example shown in Fig. 1, the difference is that the molding protrusion 70 in Fig. 1 has been changed.
Everything else is the same. That is, the molded part 17 of the heat sink shown in FIG. The molding member 20 is projected into the enclosed space 4, and is supported on the heat radiator 11 by fitting the molding portion 17 of the heat radiator into the heat radiator 11 through the fitting of the peaks and valleys, so that the heat radiator 1it is accurately placed in the enclosed space 4. position. After the resin sealing is completed, the movable mold clamping member 20 is pulled out horizontally, and the sealed product is pushed out of the mold.
その結果、第４図（ａ）の斜視図および同図（ｂ）の透
視平面図に示されるとおシ、型じめ部が封止樹脂ｌＯの
引込穴２１内に引き込んでいる製品が得られる。As a result, as shown in the perspective view of FIG. 4(a) and the transparent plan view of FIG. 4(b), a product is obtained in which the molding part is drawn into the lead-in hole 21 of the sealing resin IO. .
へ０発明の効果
本発明の半導体装置は、上述のとお夛、樹脂封止後には
、型しめ部分が樹脂内に埋没しているため、従来のよう
な突出部は全くなくなった完全絶縁型となっている。し
かして、従来と全く同じ工程で製造できるのでコスト高
金招かない。そして、従来品に代わって実装する場合、
従来のような突出部に対する絶縁上の配慮が全く不要と
なシ、実装コストの低下および高密度実装が可能となっ
て、これを用いる装置の小形化に大きく寄与できる。In addition to the above, the semiconductor device of the present invention is of a completely insulated type, with no protruding parts as in the past, since the molded part is buried in the resin after resin sealing. It has become. However, since it can be manufactured using the same process as before, high costs are not incurred. And when implementing it in place of conventional products,
There is no need to pay attention to insulation for the protruding portions as in the past, and it is possible to reduce mounting costs and achieve high-density mounting, which can greatly contribute to the miniaturization of devices using this structure.
第５図（ａ） 、 （ｂ）は外部放熱体に実装した例を
示す側面図で１、図（ａ）は従来例、図（ｂ）は本発明
による例である。これらの図において、第５図（ａ）の
例では型しめ部分７と外部放熱体１８との間の絶縁距離
が短く、この絶縁のために大きな配Ｉｎ要するのに１同
図（ｂ）の本発明例では、型しめ部１７が埋没している
穴２１の深さ會充分深くシて２くことによシ、実装時の
絶縁に対する配慮は不要となる０FIGS. 5(a) and 5(b) are side views showing an example of mounting on an external heat sink. FIG. 5(a) is a conventional example, and FIG. 5(b) is an example according to the present invention. In these figures, the insulation distance between the molded part 7 and the external heat sink 18 is short in the example of FIG. In the example of the present invention, by making the hole 21 in which the molded part 17 is buried sufficiently deep, there is no need to consider insulation during mounting.
第１図は従来の半導体装置の樹脂封止工程を説明するた
めの断面図、第２図は第１図の封止工程による製品の斜
視図、第３図は本発明の一実施例に係る半導体装置の樹
脂封止工程を説明するための断面図、第４図（ａ） 、
（ｂ）は本発明の一実施例の斜視図と透視平面図、第
５図（ａｌ 、 （ｂ）は従来例および本発明の樹脂封
止型半導体装ｆｔｋ外部放熱体に実装した状態を示す側
面図である。
１．１１・・・・・・放熱板、２・・・・・・半導体素
子、３・・・・・・内部配線、４・・・・・・樹脂封入
空間、５．１５・・・・・・上金型、６．１６・・・・
・・下金型、７．１７・・・・・・型じめ（突起）、９
・・・・・・外部引出し電極、ｌＯ・・・・・・封止樹
脂、１８・・・・・・外部放熱体、２０・・・可動型む
わ帽も第３図FIG. 1 is a cross-sectional view for explaining a conventional resin encapsulation process for a semiconductor device, FIG. 2 is a perspective view of a product obtained by the encapsulation process shown in FIG. 1, and FIG. 3 is an illustration of an embodiment of the present invention. A cross-sectional view for explaining the resin sealing process of a semiconductor device, FIG. 4(a),
(b) is a perspective view and a see-through plan view of an embodiment of the present invention, and FIG. It is a side view. 1.11... Heat sink, 2... Semiconductor element, 3... Internal wiring, 4... Resin sealed space, 5. 15... Upper mold, 6.16...
・・Lower mold, 7.17・・Mold fitting (protrusion), 9
...External lead-out electrode, lO... Sealing resin, 18... External heat sink, 20... Movable cotton cap is also shown in Figure 3.
Claims (1)
形金型を用いて封止樹脂によシ全体的に包稜してなる樹
脂封止型半導体装置において、前記ｍ脂封止の際の型し
めは、前記金型の樹脂封入空間に突入して前記放熱体と
部分的に嵌合支持し、樹脂封止後に引き抜くことのでき
る可動型しめ部材による支持と、前記放熱体の外部引出
し電極とによシ行なわれてなることを特徴とする樹脂封
止型半導体装置。In a resin-sealed semiconductor device in which a semiconductor element and a heat dissipating body supporting the semiconductor element are entirely encased in a sealing resin using a mold, The mold-clamping includes support by a movable mold-clamping member that enters the resin-sealed space of the mold, partially fits and supports the heat radiator, and can be pulled out after resin sealing, and an external extraction electrode of the heat radiator. A resin-sealed semiconductor device characterized by being manufactured by Toyoshi.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7894684A JPS60223135A (en) | 1984-04-19 | 1984-04-19 | Resin seal type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7894684A JPS60223135A (en) | 1984-04-19 | 1984-04-19 | Resin seal type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60223135A true JPS60223135A (en) | 1985-11-07 |
Family
ID=13676050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7894684A Pending JPS60223135A (en) | 1984-04-19 | 1984-04-19 | Resin seal type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60223135A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0241429U (en) * | 1988-09-14 | 1990-03-22 |
-
1984
- 1984-04-19 JP JP7894684A patent/JPS60223135A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0241429U (en) * | 1988-09-14 | 1990-03-22 |
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