JPS6021960B2 - Ｈｇ↓１−↓ｘＣｄ↓ｘＴｅ組成層の製法 - Google Patents
Ｈｇ↓１−↓ｘＣｄ↓ｘＴｅ組成層の製法Info
- Publication number
- JPS6021960B2 JPS6021960B2 JP56024388A JP2438881A JPS6021960B2 JP S6021960 B2 JPS6021960 B2 JP S6021960B2 JP 56024388 A JP56024388 A JP 56024388A JP 2438881 A JP2438881 A JP 2438881A JP S6021960 B2 JPS6021960 B2 JP S6021960B2
- Authority
- JP
- Japan
- Prior art keywords
- composition
- layer
- manufacturing
- xte
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 13
- 229910004613 CdTe Inorganic materials 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 230000001376 precipitating effect Effects 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 22
- 230000007704 transition Effects 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 11
- 239000007788 liquid Substances 0.000 description 7
- 239000007791 liquid phase Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000010587 phase diagram Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- 239000007790 solid phase Substances 0.000 description 5
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 229910004262 HgTe Inorganic materials 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000012494 Quartz wool Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
- H01L21/02411—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/0248—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/0251—Graded layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
- H10D62/862—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO being Group II-VI materials comprising three or more elements, e.g. CdZnTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8004015 | 1980-02-22 | ||
| FR8004015A FR2484469A1 (fr) | 1980-02-22 | 1980-02-22 | Procede de preparation de couches homogenes de hg1-xcdxte |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56134600A JPS56134600A (en) | 1981-10-21 |
| JPS6021960B2 true JPS6021960B2 (ja) | 1985-05-30 |
Family
ID=9238896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56024388A Expired JPS6021960B2 (ja) | 1980-02-22 | 1981-02-23 | Ｈｇ↓１−↓ｘＣｄ↓ｘＴｅ組成層の製法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4435224A (enExample) |
| EP (1) | EP0034982B1 (enExample) |
| JP (1) | JPS6021960B2 (enExample) |
| DE (1) | DE3162193D1 (enExample) |
| FR (1) | FR2484469A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2116363B (en) * | 1982-03-03 | 1985-10-16 | Philips Electronic Associated | Multi-level infra-red detectors and their manufacture |
| FR2544131B1 (fr) * | 1983-04-08 | 1985-07-05 | Telecommunications Sa | Detecteur photovoltaique en immersion optique |
| GB8324531D0 (en) * | 1983-09-13 | 1983-10-12 | Secr Defence | Cadmium mercury telluride |
| US4504334A (en) * | 1983-12-23 | 1985-03-12 | Texas Instruments Incorporated | Gettering method for mercury cadmium telluride |
| US4507160A (en) * | 1983-12-23 | 1985-03-26 | Texas Instruments Incorporated | Impurity reduction technique for mercury cadmium telluride |
| FR2557730B1 (fr) * | 1983-12-29 | 1987-01-16 | Menn Roger | Couche photoresistante a variation de composition atomique et son procede de fabrication, cellule photoresistante munie d'une telle couche et d'un filtre de longueur d'onde et arrangement de telles cellules |
| US4589192A (en) * | 1984-11-02 | 1986-05-20 | The United States Of America As Represented By The Secretary Of The Army | Hybrid epitaxial growth process |
| US4588446A (en) * | 1985-02-21 | 1986-05-13 | Texas Instruments Incorporated | Method for producing graded band gap mercury cadmium telluride |
| US4743310A (en) * | 1985-08-26 | 1988-05-10 | Ford Aerospace & Communications Corporation | HGCDTE epitaxially grown on crystalline support |
| US5182217A (en) * | 1985-12-05 | 1993-01-26 | Santa Barbara Research Center | Method of fabricating a trapping-mode |
| US4914495A (en) * | 1985-12-05 | 1990-04-03 | Santa Barbara Research Center | Photodetector with player covered by N layer |
| US5079610A (en) * | 1985-12-05 | 1992-01-07 | Santa Barbara Research Center | Structure and method of fabricating a trapping-mode |
| US5004698A (en) * | 1985-12-05 | 1991-04-02 | Santa Barbara Research Center | Method of making photodetector with P layer covered by N layer |
| FR2593196B1 (fr) * | 1986-01-21 | 1988-04-15 | Telecommunications Sa | Procede de preparation d'un lingot cristallin de hg1-xo cdxo te |
| US4740386A (en) * | 1987-03-30 | 1988-04-26 | Rockwell International Corporation | Method for depositing a ternary compound having a compositional profile |
| US4933207A (en) * | 1988-01-22 | 1990-06-12 | Hughes Aircraft Company | Laser and thermal assisted chemical vapor deposition of mercury containing compounds |
| JP2754765B2 (ja) * | 1989-07-19 | 1998-05-20 | 富士通株式会社 | 化合物半導体結晶の製造方法 |
| US5510644A (en) * | 1992-03-23 | 1996-04-23 | Martin Marietta Corporation | CDTE x-ray detector for use at room temperature |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3496024A (en) | 1961-10-09 | 1970-02-17 | Monsanto Co | Photovoltaic cell with a graded energy gap |
| GB1043530A (en) | 1961-12-26 | 1966-09-21 | Minnesota Mining & Mfg | Improvements in or relating to thermoelectric devices |
| FR1447257A (fr) | 1965-05-25 | 1966-07-29 | Centre Nat Rech Scient | Procédé pour effectuer des dépôts de matériaux volatils par croissance cristalline sur des supports solides |
| US3725135A (en) | 1968-10-09 | 1973-04-03 | Honeywell Inc | PROCESS FOR PREPARING EPITAXIAL LAYERS OF Hg{11 {118 {11 Cd{11 Te |
| US3779803A (en) | 1969-11-17 | 1973-12-18 | Ibm | Infrared sensitive semiconductor device and method of manufacture |
| US3622405A (en) * | 1970-06-22 | 1971-11-23 | Honeywell Inc | Method for reducing compositional gradients in{11 {11 {11 {11 {11 {11 {11 {11 {11 {11 |
| US4105477A (en) | 1977-01-06 | 1978-08-08 | Honeywell, Inc. | Doping of (hg,cd)te with a group va element |
-
1980
- 1980-02-22 FR FR8004015A patent/FR2484469A1/fr active Granted
-
1981
- 1981-02-17 US US06/234,753 patent/US4435224A/en not_active Expired - Lifetime
- 1981-02-18 DE DE8181400250T patent/DE3162193D1/de not_active Expired
- 1981-02-18 EP EP81400250A patent/EP0034982B1/fr not_active Expired
- 1981-02-23 JP JP56024388A patent/JPS6021960B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3162193D1 (en) | 1984-03-22 |
| EP0034982A1 (fr) | 1981-09-02 |
| FR2484469B1 (enExample) | 1982-07-02 |
| JPS56134600A (en) | 1981-10-21 |
| US4435224A (en) | 1984-03-06 |
| EP0034982B1 (fr) | 1984-02-15 |
| FR2484469A1 (fr) | 1981-12-18 |
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