FR2557730B1 - Couche photoresistante a variation de composition atomique et son procede de fabrication, cellule photoresistante munie d'une telle couche et d'un filtre de longueur d'onde et arrangement de telles cellules - Google Patents

Couche photoresistante a variation de composition atomique et son procede de fabrication, cellule photoresistante munie d'une telle couche et d'un filtre de longueur d'onde et arrangement de telles cellules

Info

Publication number
FR2557730B1
FR2557730B1 FR8321018A FR8321018A FR2557730B1 FR 2557730 B1 FR2557730 B1 FR 2557730B1 FR 8321018 A FR8321018 A FR 8321018A FR 8321018 A FR8321018 A FR 8321018A FR 2557730 B1 FR2557730 B1 FR 2557730B1
Authority
FR
France
Prior art keywords
photoresistant
cells
variation
arrangement
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8321018A
Other languages
English (en)
Other versions
FR2557730A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR8321018A priority Critical patent/FR2557730B1/fr
Publication of FR2557730A1 publication Critical patent/FR2557730A1/fr
Application granted granted Critical
Publication of FR2557730B1 publication Critical patent/FR2557730B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3428—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3431—Selenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements
FR8321018A 1983-12-29 1983-12-29 Couche photoresistante a variation de composition atomique et son procede de fabrication, cellule photoresistante munie d'une telle couche et d'un filtre de longueur d'onde et arrangement de telles cellules Expired FR2557730B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8321018A FR2557730B1 (fr) 1983-12-29 1983-12-29 Couche photoresistante a variation de composition atomique et son procede de fabrication, cellule photoresistante munie d'une telle couche et d'un filtre de longueur d'onde et arrangement de telles cellules

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8321018A FR2557730B1 (fr) 1983-12-29 1983-12-29 Couche photoresistante a variation de composition atomique et son procede de fabrication, cellule photoresistante munie d'une telle couche et d'un filtre de longueur d'onde et arrangement de telles cellules

Publications (2)

Publication Number Publication Date
FR2557730A1 FR2557730A1 (fr) 1985-07-05
FR2557730B1 true FR2557730B1 (fr) 1987-01-16

Family

ID=9295705

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8321018A Expired FR2557730B1 (fr) 1983-12-29 1983-12-29 Couche photoresistante a variation de composition atomique et son procede de fabrication, cellule photoresistante munie d'une telle couche et d'un filtre de longueur d'onde et arrangement de telles cellules

Country Status (1)

Country Link
FR (1) FR2557730B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2106956A5 (en) * 1970-09-30 1972-05-05 Siemens Ag Cadmium sulphide-selenide crystals produc- - tion
US4236098A (en) * 1979-08-20 1980-11-25 Eastman Kodak Company Solid-state color imaging devices
FR2484469A1 (fr) * 1980-02-22 1981-12-18 Telecommunications Sa Procede de preparation de couches homogenes de hg1-xcdxte
FR2490015A1 (fr) * 1980-09-10 1982-03-12 Menn Roger Procede de realisation de couches minces photoresistantes

Also Published As

Publication number Publication date
FR2557730A1 (fr) 1985-07-05

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