JPS60217635A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS60217635A JPS60217635A JP7433984A JP7433984A JPS60217635A JP S60217635 A JPS60217635 A JP S60217635A JP 7433984 A JP7433984 A JP 7433984A JP 7433984 A JP7433984 A JP 7433984A JP S60217635 A JPS60217635 A JP S60217635A
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- substrate
- gas
- oxygen
- nozzles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000007789 gas Substances 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002131 composite material Substances 0.000 claims abstract description 12
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 11
- 239000011261 inert gas Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は半導体装置のＳｉエツチングをマスクやレジス
トなしで行なうようにした半導体装置の製造方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a semiconductor device in which Si etching of the semiconductor device is performed without a mask or resist.
従来Ｓｉを基板とする半導体装置は、Ｓｉエツチングの
際にパターン設計されたマスクを用い、レジストパター
ンを形成し、これをマスクにしてドライエツチングでシ
リコンを除去する方法が用いられていた。例えば、Ｓｉ
エツチングを行なうガスとしてはＣＦ４ ＋０２が用い
られ、プラズマによりネ
発生した弗素ラジカルＦ とＳｉが反応してＳｔがエツ
チングされる。さらにこの方法を改良した方法として、
最近イオン注入法とプラズマエツチングを組み合わせた
方法が提案されている。Conventionally, in semiconductor devices using Si as a substrate, a method has been used in which a resist pattern is formed using a pattern-designed mask during Si etching, and silicon is removed by dry etching using this as a mask. For example, Si
CF4+02 is used as the etching gas, and fluorine radicals F generated by the plasma react with Si, thereby etching St. As a further improvement of this method,
Recently, a method combining ion implantation and plasma etching has been proposed.
例えば第１図（・）に示すように、写真製版−で得られ
たレジストパターン２をマスクに基板１に矢印Ａで示す
ようにイオン注入を行なうと、選択的にイオン注入され
た領域３が形成される。次に同図（ｂ）に示すように、
レジストを除去し、さらに同図（Ｃ１の矢印Ｂで示すよ
うに反応性イオンエツチングを行なうと、イオン注入さ
れた領域３は反応原子又は分子と不揮発性物質３°を形
成し、イオン注入されない基板と反応原子又は分子とは
揮発性物質を形成する。ここで矢印Ｃは揮発性物質が揮
発していく様子を示している。この例ではエツチングの
際にマスク用レジストが不要になっただけのことで、写
真製版工程が従来同様心嚢である。For example, as shown in FIG. 1 (), when ions are implanted into a substrate 1 as shown by arrow A using a resist pattern 2 obtained by photolithography as a mask, selectively ion-implanted regions 3 It is formed. Next, as shown in the same figure (b),
When the resist is removed and reactive ion etching is performed as shown by arrow B in the same figure (C1), the ion-implanted region 3 forms a non-volatile material 3° with the reactive atoms or molecules, and the ion-implanted region 3 forms a non-volatile material 3°, leaving the substrate where no ions are implanted. and the reacting atoms or molecules form a volatile substance.Here, arrow C shows how the volatile substance evaporates.In this example, the mask resist is no longer needed during etching. This means that the photoengraving process is still pericardial as in the past.
以上のように従来例では表１に示すように、・表１
多くの装置や高純度の材料が必要であった。しかもこれ
らのうちのいずれが変動してもパターン形状の分布が悪
くなり、ＬＳＩ等の歩留り低下を引き起こすものである
ため、個々の装置を安定になるよう管理する必要があっ
た。As mentioned above, in the conventional example, as shown in Table 1, many devices and high-purity materials were required. Furthermore, if any of these changes, the distribution of pattern shapes deteriorates and the yield of LSIs etc. decreases, so it is necessary to manage each device so that it is stable.
又、パターン精度を上げるにはレジストの薄層化や低反
射化あるいは高分解能を有するマスクアライナ−１高品
質マスク、材料を要し、長い工程でしかも高価な設備を
必要としていた。Furthermore, in order to improve pattern accuracy, it is necessary to make the resist layer thinner, to reduce reflection, or to use a high-quality Mask Aligner-1 mask and materials with high resolution, which requires a long process and expensive equipment.
本発明はかかる従来のＳｉエツチングの方法を簡便化せ
んとしてなされたもので、単一装置、即ち複数のノズル
を有する複合ノズルでもって酸素の集束イオンビーム照
射＋Ｈ２ガスの供給、及び余剰ガスの吸引を同時に行な
うことにより、レジストやマスクといった高価な消耗品
を利用することなく、安価で高精度のＳｉエツチングを
行なうことのできる半導体装置の製造方法を提供するも
のである。The present invention was made to simplify the conventional Si etching method, and uses a single device, that is, a composite nozzle having a plurality of nozzles, to perform focused ion beam irradiation of oxygen, supply of H2 gas, and suction of excess gas. The purpose of the present invention is to provide a method for manufacturing a semiconductor device that can perform Si etching at low cost and with high precision by simultaneously performing the following steps and without using expensive consumables such as resists and masks.
以下、本発明の実施例を図を参照して詳細に説明する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
５ｉ０２はＨ２中で８００〜１２００℃であればＳｔと
反応して３３０ガスになることはよく知られている。It is well known that 5i02 reacts with St at 800 to 1200°C in H2 to form 330 gas.
本発明の原理はＳｉ基板に高温中で集束イオンビームに
より酸素イオンを打ち込んで５ｉ０２となし、これをＨ
２雰囲気に入れて下地Ｓｉと反応させ、ＳｉＯガスを形
成することにある。一般にエピタキシャル成長前はＳｔ
裏表面自然にできた５ｉ０２をＨ２の高温処理により除
去している。この時の５ｉ０２膜厚は５０〜２００人程
度である。従って集束イオンビームによって形成される
５ｉ０２の厚さは５０〜２００人程度であれば上記原理
により除去される。The principle of the present invention is to implant oxygen ions into a Si substrate using a focused ion beam at high temperature to form 5i02, which is then converted into H
2 atmosphere to react with the underlying Si to form SiO gas. Generally, before epitaxial growth, St
5i02 naturally formed on the back surface was removed by high temperature treatment with H2. The thickness of the 5i02 film at this time is approximately 50 to 200. Therefore, if the thickness of 5i02 formed by the focused ion beam is about 50 to 200 people, it can be removed according to the above principle.
即ち本発明方法は、Ｓｉ基板の一生面の近傍に複数のノ
ズルを有する複合ノズルを配置し、その１個のノズルか
ら酸素の集束イオンビームをＳｉ基板に照射し、他のノ
ズルからＨ２を供給して上述の反応を起こさせ、そして
周辺のガス流れ込みによるパターンボケを防ぐため、他
のノズルによって発生した剰余ガスを真空除去するもの
であり、しかもこれを上記複合ノズルを基板に対し移動
させながら行なうことによりＳｉ基板に所望パターンの
溝をエツチング形成するものである。That is, in the method of the present invention, a composite nozzle having a plurality of nozzles is arranged near the whole surface of the Si substrate, a focused ion beam of oxygen is irradiated onto the Si substrate from one nozzle, and H2 is supplied from the other nozzle. In order to cause the above-mentioned reaction to occur, and to prevent pattern blurring due to the inflow of surrounding gas, the residual gas generated by other nozzles is vacuum removed, and this is removed while the composite nozzle is moved relative to the substrate. By doing this, grooves with a desired pattern are formed in the Si substrate by etching.
そしてこの際基板を加熱する必要があるが、これは上記
複合ノズルとは全く別の加熱手段により加熱してもよく
、また上記複合ノズルの１つのノズルからレーザビーム
を照射することによって部分抽熱を行なうようにしても
よい。At this time, it is necessary to heat the substrate, but this may be done by heating means completely different from the above-mentioned composite nozzle, or by irradiating a laser beam from one nozzle of the above-mentioned composite nozzle. You may also do this.
また上記工程は真空ｍ中で行なう訳であるが、これを大
気中で行なう場合には、上記酸素イオンビーム照射、Ｈ
２の供給、剰余ガスの吸引。Furthermore, the above process is carried out in a vacuum m, but when this is carried out in the atmosphere, the above-mentioned oxygen ion beam irradiation, H
2 supply, suction of surplus gas.
気を吸引することにより、上記工程を常温、大気中で行
なうことができる。By suctioning air, the above steps can be carried out at room temperature and in the atmosphere.
第２図はこのように常温、大気中で処理を行なうことの
できる本発明の一実施例方法を示す。FIG. 2 shows one embodiment of the method of the present invention, which allows the treatment to be carried out at room temperature and in the atmosphere.
ここで複合ノズル４は極めて小型で、全体で約１０００
人の直径である。さて同図において最も内側に配置され
たノズル４ａは、１０ 〜１０ Ｔｏｒｒ程度の真空に
引かれており、このノズル４ａがらは酸素の集束イオン
ビームと加熱用レーザビームが導入され、Ｓｉに酸素の
打ち込み及び５ｉ０２化を起こす。次にその外側のノズ
ル４ｂからＨ２が微量送り込まれ、ＳｉＯガスを形成す
る。ＳｉＯやＨ２ガスはさらにその外側のノズル４ｃが
ら超高真空に引き込まれ、周辺へのガス拡散を防ぐ。さ
らにその外側のノズル４ｄがらは外気の混入を防止する
ため不活性ガス、例えばＡｒを導入し、その外側に配置
されたノズル４ｅから大気及び不活性ガスを吸引する。Here, the composite nozzle 4 is extremely small, with a total of about 1000
It is the diameter of a person. Now, in the figure, the innermost nozzle 4a is drawn to a vacuum of about 10 to 10 Torr, and a focused oxygen ion beam and a heating laser beam are introduced into the nozzle 4a, and the oxygen is heated to the Si. Causes typing and 5i02 conversion. Next, a small amount of H2 is sent in from the nozzle 4b on the outside to form SiO gas. The SiO and H2 gases are further drawn into an ultra-high vacuum through the nozzle 4c on the outside to prevent gas diffusion to the surrounding area. Furthermore, an inert gas such as Ar is introduced into the nozzles 4d on the outside to prevent outside air from getting mixed in, and atmospheric air and inert gas are sucked through the nozzles 4e located outside of the nozzles 4d.
この方法によれば大気中でもＳｉエンチングが可能とな
る。またノズル径が小さいことがら装置が小型でも高真
空が達成される。さらにＨ２ガスは微量で済み危険性は
少ない。また周辺へのガス拡散を防止できるため公害等
の問題も解決できる。According to this method, Si etching is possible even in the atmosphere. Furthermore, since the nozzle diameter is small, high vacuum can be achieved even if the device is small. Furthermore, the amount of H2 gas is small and there is little danger. In addition, problems such as pollution can be solved because gas diffusion to the surrounding area can be prevented.
そしてこのノズル４又は基板１を予めプログラムされた
パターン情報に応じてスキャニングする、即ち相対移動
させることにより、所望の幅、所望の深さのＳｉエンチ
ングが可能となる。By scanning the nozzle 4 or the substrate 1 according to pattern information programmed in advance, that is, by relatively moving the nozzle 4 or the substrate 1, Si etching of a desired width and a desired depth becomes possible.
本発明はＳｉエンチングのみならず、ポリシリコンのエ
ツチングも同様の原理から行ない得るもので、この場合
本発明を用いることによりサブミクロン幅の溝堀りも可
能となる。The present invention can perform not only Si etching but also polysilicon etching based on the same principle, and in this case, by using the present invention, trenches with a submicron width can be dug.
本発明のさらに優れた点は、Ｓｉエンチングとして異方
性エツチングができることである。これはガスの横方向
の拡散を、これを吸引する方法でｉ止したためである。A further advantage of the present invention is that anisotropic etching can be performed as Si etching. This is because the lateral diffusion of gas was stopped by the method of sucking it.
従来の異方性ドライエツチングを用いると、基板温度が
上昇しエツチング速度が大幅に低下するため、深い溝堀
りが困難であったが、−力木発明では高温にすればする
程エツチング速度が速くなるため有利である。また部分
的に加熱する方法を採用することにより、接合の拡散は
喰い止められ、テーパエツチング等もコントロールでき
る。しかも加熱に要するエネルギーは、５０〜２００人
程度の厚さだけ高温にすればよいため、従来のレーザア
ニールエネルギーの１ ／１０００程度の微量であって
よい。When conventional anisotropic dry etching was used, it was difficult to dig deep grooves because the substrate temperature rose and the etching rate decreased significantly.However, with Riki's invention, the etching rate increases as the temperature increases. This is advantageous because it is faster. Furthermore, by employing a method of heating locally, diffusion of the bond can be prevented and taper etching etc. can be controlled. Moreover, the energy required for heating only needs to be raised to a high temperature for the thickness of about 50 to 200 people, so the amount of energy required for heating may be as small as about 1/1000 of the conventional laser annealing energy.
さらに本発明では、微細加工を省エネルギーで可能にで
きた訳であり、その反面パターン作図とエツチングを行
なうためスループットに難点があると思われるが、従来
の方法による多くの工程を一気に省略し、一台の装置で
これらに相当する処理を行なうことにより充分これに対
応できている。Furthermore, with the present invention, microfabrication has been made possible with energy savings, but on the other hand, there may be a problem with throughput since pattern drawing and etching are performed, but many steps of conventional methods can be omitted at once. This can be adequately handled by performing the corresponding processing with a single device.
しかもレジスト汚染や塗布ムラによるパターン上の欠陥
もない。さらにスルーブツトを上げる方法としてこれら
のノズルを多数個持つ装置にすることで、一つのパター
ン情報で同時に同一形状チップが得られる。この際はウ
ェハをスキャンする方が有利と考えられる。１
本発明の他の応用例としては、５ｉ０２ ＋５ｉ−４５
ｉｏ（ガス）相当の反応を起こす物質に対し本発明によ
るノズルを適用することができ、上記と同様の効果を奏
する。Furthermore, there are no pattern defects due to resist contamination or coating unevenness. Furthermore, as a way to increase the throughput, by using a device having a large number of these nozzles, chips of the same shape can be obtained at the same time using one piece of pattern information. In this case, it is considered more advantageous to scan the wafer. 1 Other application examples of the present invention include 5i02 +5i-45
The nozzle according to the present invention can be applied to a substance that causes a reaction equivalent to io (gas), and the same effects as described above can be obtained.
［発明の効果〕
以上のように、本発明によれば、複数のノズルを有する
複合ノズルでもって酸素の集束イオンビーム照射、Ｈ２
ガスの供給、及び剰余ガスの吸引を同時に行なうことに
より、多くの管理された材料や高価な装置を用いること
な（、微量の酸素と水素を用いて安価に短時間にＳｉエ
ッチジグができ、しかも公害等の問題も解決でき、テー
パエツチング等もコントロールできる効果がある。[Effects of the Invention] As described above, according to the present invention, focused ion beam irradiation of oxygen, H2
By supplying gas and suctioning excess gas at the same time, it is possible to perform a Si etch jig at low cost and in a short time using a small amount of oxygen and hydrogen without using many controlled materials or expensive equipment. It also has the effect of solving problems such as pollution and controlling taper etching.
第１図は従来の半導体装置の製造方法を工程順に示す図
、第２図は本発明の一実施例による半導体装置の製造方
法を示す図である。
ｌ・・・Ｓｔ基板、４・・・複合ノズル、４ａ〜４ｅ・
・・ノズル。
代理人 大岩増雄
第１図FIG. 1 is a diagram showing a conventional method for manufacturing a semiconductor device in order of steps, and FIG. 2 is a diagram showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. l... St substrate, 4... Composite nozzle, 4a to 4e.
··nozzle. Agent Masuo Oiwa Figure 1
Claims (3)
る複合ノズルを配置し、その１個のノズルから酸素の集
束イオンビームをＳｉ基板に照射することと、他のノズ
ルからＨ２を供給することと、さらに他のノズルにより
剰余残留ガスを吸引することとを、上記ノズルを上記Ｓ
ｉ基板に対し移動させながら同時に行なうことにより、
Ｓｉ基板をエツチングすることを特徴とする半導体装置
の製造方法。(1) A composite nozzle with multiple nozzles is placed in communication with the entire surface of the Si substrate, and one nozzle irradiates the Si substrate with a focused ion beam of oxygen, and the other nozzle supplies H2. The above-mentioned nozzle is connected to the above-mentioned S.
By simultaneously moving it to the i-board,
A method for manufacturing a semiconductor device, characterized by etching a Si substrate.
載の半導体装置の製造方法。(2) A method for manufacturing a semiconductor device, wherein the substrate is heated using one of the composite nozzles.
る複合ノズルを配置し、その１個のノズルから酸素の集
束イオンビームを基板に照射することと、他のノズルか
らレーザビームを照射して基板の部分加熱を行なうこと
と、他のノズルからＨ２を供給することと、さらに他の
ノズルにより剰余残留ガスを吸引することと、上述の各
ノズルの全体を取り囲む他のノズルにより不活性ガスを
流すことと、上述の各ノズル全体をとり囲むさらに他の
ノズルにより不活性ガス及び大気を吸引することとを、
上記ノズルを上記Ｓｉ基板に対し移動させながら同時に
常温、大気中で行なうことにより、Ｓｉ基板をエツチン
グすることを特徴とする半導体装置の製造方法。(3) A composite nozzle with multiple nozzles is placed near the whole surface of the Si substrate, and one nozzle irradiates the substrate with a focused oxygen ion beam, and the other nozzle irradiates the substrate with a laser beam. supplying H2 from another nozzle, suctioning the remaining residual gas through another nozzle, and supplying inert gas with another nozzle that completely surrounds each of the above-mentioned nozzles. and drawing inert gas and atmospheric air through further nozzles surrounding each of the above-mentioned nozzles,
A method for manufacturing a semiconductor device, characterized in that the Si substrate is etched by moving the nozzle relative to the Si substrate and simultaneously etching the Si substrate at room temperature in the atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7433984A JPS60217635A (en) | 1984-04-12 | 1984-04-12 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7433984A JPS60217635A (en) | 1984-04-12 | 1984-04-12 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60217635A true JPS60217635A (en) | 1985-10-31 |
Family
ID=13544259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7433984A Pending JPS60217635A (en) | 1984-04-12 | 1984-04-12 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60217635A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6435913A (en) * | 1987-07-31 | 1989-02-07 | Hitachi Ltd | Method and device for correcting defect of device |
-
1984
- 1984-04-12 JP JP7433984A patent/JPS60217635A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6435913A (en) * | 1987-07-31 | 1989-02-07 | Hitachi Ltd | Method and device for correcting defect of device |
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