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JPS6351641A - Fine pattern formation of single crystal or polycrystalline si film - Google Patents

Fine pattern formation of single crystal or polycrystalline si film

Info

Publication number
JPS6351641A
JPS6351641A JP19404486A JP19404486A JPS6351641A JP S6351641 A JPS6351641 A JP S6351641A JP 19404486 A JP19404486 A JP 19404486A JP 19404486 A JP19404486 A JP 19404486A JP S6351641 A JPS6351641 A JP S6351641A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
si
polycrystalline
oxide
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19404486A
Inventor
Naokatsu Ikegami
Jun Kanamori
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To enable a fine pattern of single crystal or polycrystalline Si with high precision to be formed easily in simplified processes by a method wherein an etching mask comprising an oxide Si film is directly formed on the surface of single crystal or polycrystalline Si film by means of irradiating said surface with oxygen ion beams.
CONSTITUTION: A polycrystalline Si film 23 is formed on an oxide Si film 22 on an Si substrate 21. A natural oxide film layer 24 is produced on the surface of polycrystalline Si film 23. Thus, the natural oxide film 24 is removed by fluoric acid. Next, the non-etched region of polycrystalline film 23 is irradiated with oxygen ion beams 25 to implant the surface with oxygen ion. Thus, another Si film 26 is formed on the surface of non-etched region of polycrystalline film 23. Next, the polycrystalline Si film 23 is laser-etched using the oxide Si film 26 as a mask. Thus, the polycrystalline Si film 23 is left only below the oxide Si film 26 so that a fine pattern of polycrystalline Si film 23 may be formed. Later, the oxide Si film 26 is removed. Likewise, a fine pattern of single crystal Si film can be formed.
COPYRIGHT: (C)1988,JPO&Japio
JP19404486A 1986-08-21 1986-08-21 Fine pattern formation of single crystal or polycrystalline si film Granted JPS6351641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19404486A JPS6351641A (en) 1986-08-21 1986-08-21 Fine pattern formation of single crystal or polycrystalline si film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19404486A JPS6351641A (en) 1986-08-21 1986-08-21 Fine pattern formation of single crystal or polycrystalline si film

Publications (1)

Publication Number Publication Date
JPS6351641A true true JPS6351641A (en) 1988-03-04

Family

ID=16318004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19404486A Granted JPS6351641A (en) 1986-08-21 1986-08-21 Fine pattern formation of single crystal or polycrystalline si film

Country Status (1)

Country Link
JP (1) JPS6351641A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03135568A (en) * 1989-06-22 1991-06-10 Digital Equip Corp <Dec> Lithography technique using laser scanning for producing electronic components and the like
JPH0417685A (en) * 1990-05-09 1992-01-22 Canon Inc Formation of etching pattern
EP0813232A2 (en) * 1996-05-15 1997-12-17 Nec Corporation Method of reducing the amount of carbon in an interface between an epitaxial film and a Si substrate
US6936484B2 (en) 1998-10-16 2005-08-30 Kabushiki Kaisha Toyota Chuo Kenkyusho Method of manufacturing semiconductor device and semiconductor device
US7318993B2 (en) 2001-12-21 2008-01-15 Infineon Technologies Ag Resistless lithography method for fabricating fine structures
US7622338B2 (en) 2004-08-31 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7977253B2 (en) 2004-08-31 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03135568A (en) * 1989-06-22 1991-06-10 Digital Equip Corp <Dec> Lithography technique using laser scanning for producing electronic components and the like
JPH0417685A (en) * 1990-05-09 1992-01-22 Canon Inc Formation of etching pattern
EP0813232A2 (en) * 1996-05-15 1997-12-17 Nec Corporation Method of reducing the amount of carbon in an interface between an epitaxial film and a Si substrate
EP0813232A3 (en) * 1996-05-15 1998-09-02 Nec Corporation Method of reducing the amount of carbon in an interface between an epitaxial film and a Si substrate
US5920795A (en) * 1996-05-15 1999-07-06 Nec Corporation Method for manufacturing semiconductor device
US6936484B2 (en) 1998-10-16 2005-08-30 Kabushiki Kaisha Toyota Chuo Kenkyusho Method of manufacturing semiconductor device and semiconductor device
US7318993B2 (en) 2001-12-21 2008-01-15 Infineon Technologies Ag Resistless lithography method for fabricating fine structures
US7622338B2 (en) 2004-08-31 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7977253B2 (en) 2004-08-31 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device

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