JPS6021569A - 光直接点弧形サイリスタ装置およびその製造方法 - Google Patents

光直接点弧形サイリスタ装置およびその製造方法

Info

Publication number
JPS6021569A
JPS6021569A JP58127847A JP12784783A JPS6021569A JP S6021569 A JPS6021569 A JP S6021569A JP 58127847 A JP58127847 A JP 58127847A JP 12784783 A JP12784783 A JP 12784783A JP S6021569 A JPS6021569 A JP S6021569A
Authority
JP
Japan
Prior art keywords
electrode plate
optical
optical fiber
cathode
side external
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58127847A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0563945B2 (enrdf_load_html_response
Inventor
Kougo Otai
小田井　恒吾
Katsumi Akabane
赤羽根　克己
Shuji Musha
武者　修二
Tadashi Sakagami
阪上　正
Tsuneo Haishi
羽石　常男
Mutsuhiro Mori
睦宏 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58127847A priority Critical patent/JPS6021569A/ja
Publication of JPS6021569A publication Critical patent/JPS6021569A/ja
Publication of JPH0563945B2 publication Critical patent/JPH0563945B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4292—Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thyristors (AREA)
JP58127847A 1983-07-15 1983-07-15 光直接点弧形サイリスタ装置およびその製造方法 Granted JPS6021569A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58127847A JPS6021569A (ja) 1983-07-15 1983-07-15 光直接点弧形サイリスタ装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58127847A JPS6021569A (ja) 1983-07-15 1983-07-15 光直接点弧形サイリスタ装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6021569A true JPS6021569A (ja) 1985-02-02
JPH0563945B2 JPH0563945B2 (enrdf_load_html_response) 1993-09-13

Family

ID=14970136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58127847A Granted JPS6021569A (ja) 1983-07-15 1983-07-15 光直接点弧形サイリスタ装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6021569A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194566A (ja) * 1984-03-15 1985-10-03 Mitsubishi Electric Corp 光駆動半導体装置
JPS63107168A (ja) * 1986-10-24 1988-05-12 Fuji Electric Co Ltd 光サイリスタ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194566A (ja) * 1984-03-15 1985-10-03 Mitsubishi Electric Corp 光駆動半導体装置
JPS63107168A (ja) * 1986-10-24 1988-05-12 Fuji Electric Co Ltd 光サイリスタ

Also Published As

Publication number Publication date
JPH0563945B2 (enrdf_load_html_response) 1993-09-13

Similar Documents

Publication Publication Date Title
US5167724A (en) Planar photovoltaic solar concentrator module
US5498297A (en) Photovoltaic receiver
WO2010101367A2 (ko) 전기에너지 저장장치
JPH0480543B2 (enrdf_load_html_response)
US4450461A (en) Low cost high isolation voltage optocoupler with improved light transmissivity
CN109202071B (zh) 一种电子枪装置
ES8305536A1 (es) Estructura de pila de combustible electroquimica mejorada.
ATE86050T1 (de) Verbindungselement zwischen elektrodenseparatorwickel und zellenpol einer galvanischen zelle.
SE9102489L (sv) Uppvaermningsbara speglar
WO2023198220A1 (zh) 动力电池盖板及动力电池
JPS6021569A (ja) 光直接点弧形サイリスタ装置およびその製造方法
JPS5949709B2 (ja) 光点弧サイリスタ装置
US5081395A (en) Fluorescent lamp having three electrodes for starting at low temperatures
JPH07221286A (ja) 加圧組立半導体装置のためのゲート結合システム
JP3345253B2 (ja) 圧接型半導体装置
JPS61120468A (ja) 光半導体装置
US4757366A (en) Light-triggerable thyristor having low-loss feed of the trigger energy
JPH0440288Y2 (enrdf_load_html_response)
CN220488938U (zh) 一种led模组
JP2000323737A (ja) 太陽電池モジュール
CN215644504U (zh) 平板式晶闸管
JP3535341B2 (ja) 圧接型半導体装置
JPS60161668A (ja) サイリスタ装置
JPS58180070A (ja) 太陽電池モジユ−ル
JPS6148787B2 (enrdf_load_html_response)