JPS60213044A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS60213044A
JPS60213044A JP59069430A JP6943084A JPS60213044A JP S60213044 A JPS60213044 A JP S60213044A JP 59069430 A JP59069430 A JP 59069430A JP 6943084 A JP6943084 A JP 6943084A JP S60213044 A JPS60213044 A JP S60213044A
Authority
JP
Japan
Prior art keywords
pellets
wax
pellet
solvent
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59069430A
Other languages
Japanese (ja)
Inventor
Goro Ikegami
五郎 池上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP59069430A priority Critical patent/JPS60213044A/en
Publication of JPS60213044A publication Critical patent/JPS60213044A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To prevent an adhesion to a pellet of Si ships generated on wafer dicing by melting wax on the pellet stuck surface of a substrate by spraying a solvent against wax and separating and washing the pellet. CONSTITUTION:When a heated solvent 14 is sprayed against the lower surface of a glass plate 1 set to the upper section of a squirrel cage 11 from nozzles 12, wax on which pellets 5 are stuck is melted, and the pellets 5 fall and are received on the bottom of the squirrel cage 11 while the heated solvent 14 containing Si chips 10 is stored on the bottom of a washing tank 13. When the heated solvent 14 is sprayed continuously, the dropping heated solvent 14 collides with the pellets 5 falling on the bottom of the squirrel cage 11, and washes the pellets 5. Accordingly, Si chips generated on wafer dicing do not adhere, and the pellets can be separated.

Description

【発明の詳細な説明】 イ、産業上の利用分野 本発明は、半導体ウェーハを切断してペレ。[Detailed description of the invention] B. Industrial application field The present invention involves cutting and peeling semiconductor wafers.

トに分離する半導体装置の製造方法に関するものである
The present invention relates to a method for manufacturing a semiconductor device in which the semiconductor device is separated into two parts.

口、従来技術 半導体ウェーハ(以下単にウェーハと称す)を切断して
ベレットに分離するにはいくつかの方法があり、その内
の一つに、ウェーハをワックスによりガラス板等の基板
に貼り付け、ウェーハをグイシングツーにて完全カント
(スルーカット)シベレントに分離する方法がある。
There are several methods for cutting a semiconductor wafer (hereinafter simply referred to as a wafer) into pellets, one of which is to attach the wafer to a substrate such as a glass plate with wax. There is a method of completely canting (through-cutting) separating wafers using a separating tool.

この方法を第1図及び第2図に基づき説明すると、まず
第1図において(1)は基板、例えばガラス板、(2)
はウェーハであり、ウェーハ(2)はワックス(3)に
よりガラス板(1)に貼り付けられており、このウェー
ハ(2)の表面をグイシングツ−(4)にてワックス(
3)に食い込むまで完全カットすることよりペレット(
5)(5)−・に分離する。この時、各ベレット(5)
はガラス板(1)に貼り付けられたままであり、次にワ
ックス(3)を溶かして各ベレット(5)をガラス板(
1)′から分離し、かつ、洗浄する工程が必要となる。
This method will be explained based on FIGS. 1 and 2. First, in FIG. 1, (1) is a substrate, such as a glass plate, (2)
is a wafer, the wafer (2) is attached to the glass plate (1) with wax (3), and the surface of this wafer (2) is coated with wax (4) using a guising tool (4).
3) Pellet (
5) Separate into (5)-・. At this time, each bellet (5)
remain attached to the glass plate (1), then melt the wax (3) and attach each pellet (5) to the glass plate (1).
1) A step of separating from ' and washing is required.

この工程を第2図に基づき説明すると、図において(6
)は有機溶剤(7)の貯溜槽、(8)は貯溜槽(6)内
で有機溶剤(7〉中に浸される網かごである。そしてペ
レット(5)を貼り付けたガラス板(1)が入れられた
網かご(8)を有S溶剤(7)中に浸して有機溶剤(7
)を攪拌し、更に貯溜槽(6)に付設されているヒータ
(9)により有#l!A溶剤(7)を加熱すると、貯溜
槽(6)内でワックス(3)が溶けてベレット(5)が
ガラス板(1)から分離する。
This process will be explained based on Fig. 2. In the figure (6
) is a storage tank for organic solvent (7), (8) is a mesh basket immersed in organic solvent (7) in storage tank (6), and a glass plate (1) with pellets (5) pasted thereon. ) is placed in the organic solvent (7) by soaking it in the S-containing solvent (7).
) is stirred and further heated by the heater (9) attached to the storage tank (6). When solvent A (7) is heated, the wax (3) melts in the reservoir (6) and the pellet (5) separates from the glass plate (1).

このペレット(5)を網かご(8)で受けて別の槽で洗
浄すると、ウェーハ(2)のベレッタイズが完了する。
When the pellets (5) are received in a mesh basket (8) and washed in another tank, pelletization of the wafer (2) is completed.

上記ペレッタイズ工程は、グイシングツ−を用いるため
ダ・イオードペレフトのように比較的大きいベレットの
製造に適している。
The above-mentioned pelletizing process is suitable for producing relatively large pellets such as diode pellets because it uses a guissing tool.

ハ0発明が解決しようとする問題点 。Problems that the invention aims to solve.

まずウェーハ(2)をダイシングソー(4)で完全カン
トした時、Stの切りくずが生じ、第1図に示すように
グイシングツ−(4)で刻まれた溝(2°)内にダイシ
ングによるSlの切りくず(10)が溜る。従って、ペ
レット(5)を貼り付けたガラス板(1)を有機溶剤(
7)中に浸すと、上記Sl(ず(10)が貯溜槽(6)
内で沈澱する。(第2図参照) ところが、ワックス(3)を熔かしてガラス板(1)か
らペレット(5)を分離するため有機溶剤(7)を攪拌
すると、上記Si<ず(1o)が貯溜槽(6)内に浮遊
して、分離したペレット(5)の表面にSi(ず(10
)が付着し洗浄しても完全に除去できず、例えば第3図
に示すようにバンブ電極(5a)に付着したSi(ず(
1o)は接解不良を生じさせる。
First, when the wafer (2) is completely canted with the dicing saw (4), chips of St are generated, and as shown in Fig. Chips (10) accumulate. Therefore, the glass plate (1) with the pellets (5) pasted thereon is treated with an organic solvent (
7) When immersed in the tank (6), the above Sl (10)
Precipitates within. (See Figure 2) However, when the organic solvent (7) is stirred to melt the wax (3) and separate the pellets (5) from the glass plate (1), the Si < (6), floating on the surface of the separated pellet (5)
) adheres to the bump electrode (5a) and cannot be completely removed even after cleaning. For example, as shown in FIG.
1o) causes poor welding.

又、分離したペレット(5)が有機溶剤(7)の攪拌時
に互いにこすり合ったりすれば、ペレット表面に傷が付
き、特に5io2層(5b)が脆くなることがある。そ
こにSt<ず(1o)が付着すると、Stは硬いため第
3図に示すように脆くなった5102層(5b)に別く
ず(1o)が入り込み、そのためベレット(5)の絶縁
が悪くなりその特性が劣化することがある。
Furthermore, if the separated pellets (5) rub against each other during stirring of the organic solvent (7), the pellet surface may be damaged, and the 5io2 layer (5b) in particular may become brittle. When St < zu (1o) adheres there, since St is hard, the other debris (1o) gets into the brittle 5102 layer (5b) as shown in Figure 3, which deteriorates the insulation of the pellet (5). Its characteristics may deteriorate.

二3発明の構成 本発明は、ワックスで基板に貼り付けられた半導体ウェ
ーハを完全カットしてペレットに分離した後、前記基板
のベレツト貼り付は面にワックスの溶剤を吹き付けてワ
ックスを溶かし、該ペレ・7トを基板から落下させて分
離・洗浄することによりウェーハダイシング時に生じた
Slくずがベレットに付着しないようにするものである
23. Structure of the Invention The present invention provides that after a semiconductor wafer pasted to a substrate with wax is completely cut and separated into pellets, the pellets of the substrate are pasted by spraying a wax solvent onto the surface to melt the wax. By dropping the pellets from the substrate, separating and cleaning them, it is possible to prevent Sl scraps generated during wafer dicing from adhering to the pellets.

ホ、実施例 以下、本考案の一実施例を第4図の概略断面図に基づき
説明する。図において、(11)は、ベレット(5)を
貼り付けたガラス板(1)が所定位置にセットされる網
かごてあり、ガラス板(1)はベレット貼り付は面を下
にして網かご(11)の上部にセットされる。(12)
は、加熱有機溶剤を噴射するノズルで、その開口部(1
2a)が網かご(11)の側部を貫通して網かご(11
)上部のガラス板(1)の下面に向くように取り付けら
れている。 (13)は、網かご(11)を受けるよう
に配置された洗浄槽であり、その側部にノズル(12)
が貫設されると共にノズル(工2)から噴射された加熱
有機溶剤(14)(以下、加熱溶剤と称す)を貯溜する
E. Example Hereinafter, an example of the present invention will be described based on the schematic sectional view of FIG. 4. In the figure, (11) is a mesh basket in which a glass plate (1) with a beret (5) attached is set in a predetermined position. (11) is set at the top. (12)
is a nozzle that sprays heated organic solvent, and its opening (1
2a) penetrates the side of the mesh basket (11) and
) It is attached so as to face the bottom surface of the upper glass plate (1). (13) is a cleaning tank arranged to receive the mesh basket (11), and a nozzle (12) is installed on the side of the cleaning tank.
A heating organic solvent (14) (hereinafter referred to as heating solvent) injected from a nozzle (work 2) is stored therein.

上記構成に基づき本考案の動作を以下説明する。まず第
4図に示すように網かご(11)の上部にセットされた
ガラス板(1)の下面(ベレット貼り付は面)に対して
ノズル(12)から加熱溶剤(14)を吹き付けると、
加熱溶剤(14)が溝(2″)内に入り、ペレット(5
)を貼り付けているワックスが溶けてペレット(5)の
み落下し、網かと(11)の底にベレット(5)が受け
られると共に、Si(ず(10)を含んだ加熱溶剤(1
4)が洗浄槽(13)の底に貯溜される。
The operation of the present invention will be explained below based on the above configuration. First, as shown in Fig. 4, a heated solvent (14) is sprayed from a nozzle (12) onto the lower surface (the surface where the bullet is attached) of the glass plate (1) set on the top of the mesh basket (11).
The heated solvent (14) enters the groove (2") and the pellet (5"
) melts and only the pellet (5) falls, and the pellet (5) is received at the bottom of the net (11), and the heated solvent (1
4) is stored at the bottom of the cleaning tank (13).

そして、更に加熱溶剤(14)の吹き付けを続けると、
滴下する加熱溶剤(14)が、網かご(11)の底に落
下したペレット(5)に当たってペレット(5)を洗浄
する。しか゛も、ベレット(5)がガラス板(1)から
落下する時、ベレット同志酸る程度こすり合うが、従来
技術のように連続攪拌しておらないので、表面に付く傷
が少なくなる。
Then, when the heating solvent (14) is further sprayed,
The dripping heating solvent (14) hits the pellets (5) that have fallen to the bottom of the mesh basket (11) and washes the pellets (5). However, when the pellets (5) fall from the glass plate (1), they rub against each other to a certain extent, but unlike the prior art, they are not continuously stirred, so there are fewer scratches on the surface.

又、網かご(11)の底のベレッ1−(5)の洗浄のた
め第4図の鎖線に示すように開口部を網かと(11)の
底に向けたノズルを設けてもよい、更に、洗浄槽(13
)の底に貯溜した加熱溶剤(14)中のSi<ず(10
)は沈澱していくため、加熱溶剤(14)の上澄みを取
り出せば、加熱溶剤(14)の再使用が可能となる。
Further, in order to clean the beret 1-(5) at the bottom of the net basket (11), a nozzle may be provided with the opening facing the bottom of the net basket (11) as shown by the chain line in FIG. , cleaning tank (13
) in the heated solvent (14) stored at the bottom of the
) will precipitate, so if the supernatant of the heated solvent (14) is removed, the heated solvent (14) can be reused.

次に、上記実施例の変形として第5図に示すように、ペ
レット貼り付は面を横に向けてガラス板(1)を配置し
、ノズル(12)から加熱溶剤(14)を吹き付けても
よく、又、網かごくIO)の代わりに網プレートにより
落下するベレットを受けてもよい。
Next, as a modification of the above embodiment, as shown in FIG. 5, the pellets can be attached by placing the glass plate (1) with its surface facing sideways and spraying the heated solvent (14) from the nozzle (12). Alternatively, the falling pellets may be caught by a net plate instead of the net cage (IO).

へ1発明の効果 本発明によれば、ワックスで基板に貼り付けられた半導
体ウェーハをダイシングにより完全カットしてベレット
に分離した後、基板のペレット貼り付は面にワックスの
溶剤を吹き付けて、ワックスを溶かし、更に基板から落
下したベレットを網かと等で受けるようにしたから、ウ
ェーハダイシング時に生じたSi(ずが付着することな
くペレットを分離することができ、Si(ずによる種々
の不都合が除去される。又、吹き付は後の加熱溶剤が落
下する時、網かどの底に受けられているベレットに加熱
溶剤が当たるため、ベレットの分離と洗浄が同時にでき
る。しかも、基板からベレットが分離する時、互いにこ
すり合うことが少ないため、ペレット表面に付く傷が少
なくなって、処理歩留まりが向上する。
According to the present invention, a semiconductor wafer pasted to a substrate with wax is completely cut by dicing and separated into pellets, and then a wax solvent is sprayed onto the surface of the semiconductor wafer to attach the pellets to the substrate. By melting the pellets and catching the pellets falling from the substrate with a net, etc., the pellets can be separated without adhering to the Si (dust) generated during wafer dicing, and various inconveniences caused by Si (dust) can be removed. In addition, when the heated solvent falls after spraying, the heated solvent hits the pellets held at the bottom of the screen corner, so the pellets can be separated and cleaned at the same time.Moreover, the pellets can be separated from the substrate easily. Since there is less friction between the pellets during processing, there are fewer scratches on the pellet surface and the processing yield is improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は基板に貼り付けられて完全カントされた半導体
ウェーへの断面とグイシングツ−の概略図、第2図は従
来のベレット分離方法に基づく装置の概略断面図、11
13図は第2図の装置中でSi<ずの付着したベレット
の断面図、j84図は本発明に係る半導体装置の製造方
法に基づく一実施例の概略断面図で、第5図はその変形
例の概略断面図である。 (1)・・・基板、(2)・−・半導体ウェーハ、(3
)・−ワックス、(5)・・−ペレット、(14)−・
・ワックスの溶剤。
Fig. 1 is a schematic diagram of a cross section of a semiconductor wafer pasted on a substrate and completely canted, and a schematic diagram of a separating tool; Fig. 2 is a schematic cross-sectional diagram of a device based on a conventional pellet separation method;
Fig. 13 is a cross-sectional view of a pellet with Si < Si attached in the apparatus of Fig. 2, Fig. j84 is a schematic cross-sectional view of an embodiment based on the method for manufacturing a semiconductor device according to the present invention, and Fig. 5 is a modification thereof. FIG. 3 is a schematic cross-sectional view of an example. (1)...Substrate, (2)...Semiconductor wafer, (3
)・−wax, (5)・・−pellet, (14)−・
・Wax solvent.

Claims (1)

【特許請求の範囲】[Claims] (1) ワックスで基板に貼り付けられた半導体ウェー
ハを完全カットしてベレットに分離した後、前記基板の
ペレット貼り付は面にワックスの溶剤を吹き付けてワッ
クスを溶かし、該ベレットを基板から落下させて分離・
洗浄することを特徴とする半導体装置の製造方法。
(1) After completely cutting the semiconductor wafer attached to the substrate with wax and separating it into pellets, attaching the pellets to the substrate involves spraying a wax solvent on the surface to melt the wax, and then dropping the pellet from the substrate. Separate and
A method for manufacturing a semiconductor device, which includes cleaning.
JP59069430A 1984-04-06 1984-04-06 Manufacture of semiconductor device Pending JPS60213044A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59069430A JPS60213044A (en) 1984-04-06 1984-04-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59069430A JPS60213044A (en) 1984-04-06 1984-04-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS60213044A true JPS60213044A (en) 1985-10-25

Family

ID=13402401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59069430A Pending JPS60213044A (en) 1984-04-06 1984-04-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS60213044A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4922861A (en) * 1972-04-26 1974-02-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4922861A (en) * 1972-04-26 1974-02-28

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