JPS6010756A - Manufacture of beam-lead type semiconductor device - Google Patents
Manufacture of beam-lead type semiconductor deviceInfo
- Publication number
- JPS6010756A JPS6010756A JP58119143A JP11914383A JPS6010756A JP S6010756 A JPS6010756 A JP S6010756A JP 58119143 A JP58119143 A JP 58119143A JP 11914383 A JP11914383 A JP 11914383A JP S6010756 A JPS6010756 A JP S6010756A
- Authority
- JP
- Japan
- Prior art keywords
- pellets
- wax
- heated
- wafer
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4822—Beam leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dicing (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はビームリード型半導体装愉の製造方法に関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a beam lead type semiconductor device.
従来ビームリード型半導体装置の製造方法は、所望のビ
ームリード型半導体素子の形成された半導体基板の上面
にワックスを塗布し石英板と貼り合せし後、該半導体基
板の裏面にレジストにてパターンを形成し混酸液で半導
体ウェハーを選択的にエツチング除去してペレッ）１＆
に分離し、次にペレット１個ずつ分離して再配列する為
に１ｏｏ〜２００Ｗ温度のホットプレート上でワックス
を溶しペレット吸着用治具にてペレットと石英板とを分
離後、半導体ペレットに付着ワックスを予め加熱ヒータ
ーで有枠溶剤を暖めた有機溶剤をスプレーガンで３〜５
分間吹付けて除去し別の配列板に並べていｔｏ
しかし上記従来のペレットハンドリング方法には、以下
に述べるような欠点があった。Conventional methods for manufacturing beam-lead semiconductor devices include applying wax to the top surface of a semiconductor substrate on which a desired beam-lead semiconductor element is formed, bonding it to a quartz plate, and then forming a pattern using a resist on the back surface of the semiconductor substrate. Form and selectively remove the semiconductor wafer with a mixed acid solution to form pellets) 1&
Then, to separate and rearrange the pellets one by one, wax was melted on a hot plate at a temperature of 100 to 200 W. After separating the pellets and the quartz plate using a pellet adsorption jig, the pellets were separated into semiconductor pellets. Spray the adhering wax with a spray gun using an organic solvent that has been heated with a heated heater for 3 to 5 minutes.
However, the conventional pellet handling method described above has the following drawbacks.
ペレットハンドリングする場合にペレットと石英板とが
ワックスによって貼り合わさっておりこのワックスを１
００〜２００℃の温度のホットプレート上で石英板と暖
めてワックスを溶かし、ペレット吸着用治具にてペレッ
トと石英板とを分離後、半導体ペレットの配線面及び裏
面に付着しているワックスを、５０〜１００℃の温度範
囲の加熱ヒーターにて予め有機用剤を暖めスプレーガン
で吹付時３０〜３５℃範囲の有機溶剤を３〜５秒間吹付
けてワックスを除去し別の配列板に並べているがペレッ
トサイズによってワックス洗浄に時間がかかりまたワッ
クスが完全に取シきれない場合もあった。When handling pellets, the pellets and quartz plate are bonded together with wax, and this wax is
Melt the wax by heating it with a quartz plate on a hot plate at a temperature of 00 to 200°C. After separating the pellet and quartz plate using a pellet adsorption jig, remove the wax adhering to the wiring surface and back side of the semiconductor pellet. , warm the organic agent in advance with a heater in the temperature range of 50 to 100 degrees Celsius, and then spray an organic solvent in the range of 30 to 35 degrees Celsius for 3 to 5 seconds with a spray gun to remove wax, and arrange it on another array plate. However, depending on the pellet size, cleaning the wax takes time, and in some cases, the wax cannot be completely removed.
ペレットの配線面及び裏面にワックスが残っていると、
ペレットの信頼性及び歩留りを悪くし又ペレットサイズ
によってペレットハンドリングの洗浄時間を長くしたり
するため作業能率を悪くする欠点を持っていた。If wax remains on the wiring side and back side of the pellet,
This method has disadvantages in that it impairs the reliability and yield of pellets, and it also increases the cleaning time for pellet handling depending on the pellet size, which impairs work efficiency.
本発明は上記欠点を除去し半導体装置の信頼性及び製造
歩留りを大幅に向上させることのできる半導体装置の製
造方法を提供するものである。The present invention provides a method for manufacturing a semiconductor device that can eliminate the above-mentioned drawbacks and significantly improve the reliability and manufacturing yield of the semiconductor device.
本発明の特徴は、ビームリード型半導体素子の形成され
たウェハーを裏返してワックスで平板に貼り付けする工
程と、前記ウェノ・−を裏面から選択的にエツチング除
去してペレットに分離する工程と、加熱によりワックス
を溶しペレット吸着用治具にて前記平板からペレットを
分離する工程と、前記ペレットに付着しているワックス
を、暖められ大骨は皿内にて、暖めた有機溶剤にて除去
する工程と、前記ペレットを配列する工程とを含む半導
体装置の製造方法にある。The features of the present invention include a step of turning over a wafer on which a beam lead type semiconductor element is formed and pasting it on a flat plate with wax, and a step of selectively etching away the wafer from the back side and separating it into pellets. A process of melting the wax by heating and separating the pellets from the flat plate using a pellet adsorption jig, and removing the wax adhering to the pellets using a heated organic solvent in a dish. and arranging the pellets.
以下実施例に基づき図面を参照して本発明を詳細にｍ＜
？明する。The present invention will be described in detail below based on Examples and with reference to the drawings.
? I will clarify.
まず第１図に示すように、所望のビームリード型素子の
形成された半導体ウェハー１を、前記ビームリード２が
下になるように裏返して、例えばスカイコートなどのワ
ックス３を用いて石英などの平板４に貼り付ける。First, as shown in FIG. 1, a semiconductor wafer 1 on which a desired beam lead type element has been formed is turned over so that the beam lead 2 is on the bottom, and a wax 3 such as Sky Coat is used to coat the semiconductor wafer 1 with quartz or the like. Paste it on flat plate 4.
次に前記半導体ウェハー１の裏面にレジストパターンを
形成し、該パターンをマスクにして混酸液を用いて該ウ
ェハーを選択的にエツチング除去し、第２図に示すよう
にペレット５に分離する。Next, a resist pattern is formed on the back surface of the semiconductor wafer 1, and using the pattern as a mask, the wafer is selectively etched away using a mixed acid solution and separated into pellets 5 as shown in FIG.
次に１００〜２００℃のホットプレート７の上で １石
英板４を暖めてワックス３を溶かしベレット吸着用治具
６を用いてペレット５を石英板４から分離する。Next, the 1 quartz plate 4 is heated on a hot plate 7 at 100 to 200°C to melt the wax 3 and the pellet 5 is separated from the quartz plate 4 using a pellet adsorption jig 6.
次に第３図１ｔＣ示すようにペレット１５の配線ｉ７ｎ
及び裏面に付着しているワックス１３を５０〜１００℃
温度範囲の加熱ヒーター２１によって予め有機溶剤と、
洗浄用受皿１８も加熱ヒーター１９によって５０〜１０
０℃の温度範囲で加熱し、スプレーガン２０で吹付時３
５〜４０℃範囲の有上記のように不発明方法によｎはペ
レットの配線面及び畳面に付着し、ているワックスを予
め暖めた有機溶剤と洗汐用受は皿も暖めることによ勺有
機溶剤を高ｔムでペレットに吹付ける事が出来るため、
短時間でワックスが除去でき、しかもペレットにワック
スが残ることなく、製造歩留り及び製品の信頼性が良く
なシ、しかもペレットサイズに関係なく短時間でベレッ
トハンドリングが可能になる。Next, as shown in FIG. 3 1tC, the wiring i7n of the pellet 15 is
And the wax 13 attached to the back side is heated to 50 to 100°C.
An organic solvent is heated in advance by a heater 21 having a temperature range.
The cleaning saucer 18 also has a temperature of 50 to 10
Heating in the temperature range of 0℃ and spraying with spray gun 20 3
As mentioned above, by the uninvented method, the wax that adheres to the wiring surface and the mat surface of the pellet is heated with an organic solvent and the washing tray is heated by heating the dish as well. Since the organic solvent can be sprayed onto the pellets at a high tonne,
Wax can be removed in a short time, no wax remains on the pellets, improving manufacturing yield and product reliability, and pellet handling can be performed in a short time regardless of pellet size.
５−
第１図乃至第４図は本発明の詳細な説明する為の断面図
である。
１・・・・・・半導体ウェハー、２．１２・・・・・・
ビームリード、３．１３・・・・−ワックス、４・・・
−・・石英板、５゜１５・・・・・・ペレット、６．１
６・・・・・・ベレット吸着用治具、７・・・・・・ホ
ットプレート、１８・・・・・・洗浄用受は皿、１９・
−・・・・洗浄用受は皿の加熱ヒーター、２０・・・・
・・スプレーガン、２１・・・・・・有機溶剤の加熱ヒ
ーター、２２・・・・・・ガラス板である。
６−5- FIGS. 1 to 4 are sectional views for explaining the present invention in detail. 1... Semiconductor wafer, 2.12...
Beam lead, 3.13...-wax, 4...
-...Quartz plate, 5゜15...Pellet, 6.1
6...Bellet suction jig, 7...Hot plate, 18...Dish for cleaning, 19.
-...The cleaning receiver is a dish heater, 20...
. . . Spray gun, 21 . . . Organic solvent heater, 22 . . . Glass plate. 6-
Claims (1)
してワックスで平板に貼り付ける工程と、前記ウェハー
を裏面から選択的にエツチング除去してペレットに分離
する工程と、前記ワックスを溶しペレット吸着用治具に
て前記平板から前記ペレットを分離する工程と、前記ペ
レットに付着しているワックスを、暖められた洗浄用骨
は皿内にて、暖めた有機溶剤によってワックスを除去す
る工程とを含むことを特徴とするビームリード型半導体
装置の製造方法。A step is to turn over the wafer on which a beam-lead type semiconductor element has been formed and attach it to a flat plate with wax, a step to selectively remove etching from the back side of the wafer and separate it into pellets, and a treatment for melting the wax and adsorbing the pellets. separating the pellets from the flat plate using a tool; and removing the wax adhering to the pellets using a heated organic solvent in a heated washing bone dish. A method for manufacturing a beam lead type semiconductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58119143A JPS6010756A (en) | 1983-06-30 | 1983-06-30 | Manufacture of beam-lead type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58119143A JPS6010756A (en) | 1983-06-30 | 1983-06-30 | Manufacture of beam-lead type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6010756A true JPS6010756A (en) | 1985-01-19 |
Family
ID=14753979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58119143A Pending JPS6010756A (en) | 1983-06-30 | 1983-06-30 | Manufacture of beam-lead type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6010756A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6833609B1 (en) | 1999-11-05 | 2004-12-21 | Amkor Technology, Inc. | Integrated circuit device packages and substrates for making the packages |
| US6847099B1 (en) | 2003-02-05 | 2005-01-25 | Amkor Technology Inc. | Offset etched corner leads for semiconductor package |
| US7872343B1 (en) | 2007-08-07 | 2011-01-18 | Amkor Technology, Inc. | Dual laminate package structure with embedded elements |
| US7906855B1 (en) | 2008-01-21 | 2011-03-15 | Amkor Technology, Inc. | Stacked semiconductor package and method of making same |
| US8154111B2 (en) | 1999-12-16 | 2012-04-10 | Amkor Technology, Inc. | Near chip size semiconductor package |
| US8866278B1 (en) | 2011-10-10 | 2014-10-21 | Amkor Technology, Inc. | Semiconductor device with increased I/O configuration |
| US9631481B1 (en) | 2011-01-27 | 2017-04-25 | Amkor Technology, Inc. | Semiconductor device including leadframe with a combination of leads and lands and method |
| US9673122B2 (en) | 2014-05-02 | 2017-06-06 | Amkor Technology, Inc. | Micro lead frame structure having reinforcing portions and method |
| US9691734B1 (en) | 2009-12-07 | 2017-06-27 | Amkor Technology, Inc. | Method of forming a plurality of electronic component packages |
| US9871015B1 (en) | 2002-11-08 | 2018-01-16 | Amkor Technology, Inc. | Wafer level package and fabrication method |
| US10014240B1 (en) | 2012-03-29 | 2018-07-03 | Amkor Technology, Inc. | Embedded component package and fabrication method |
| US10090228B1 (en) | 2012-03-06 | 2018-10-02 | Amkor Technology, Inc. | Semiconductor device with leadframe configured to facilitate reduced burr formation |
| US10811341B2 (en) | 2009-01-05 | 2020-10-20 | Amkor Technology Singapore Holding Pte Ltd. | Semiconductor device with through-mold via |
| US11043458B2 (en) | 2011-11-29 | 2021-06-22 | Amkor Technology Singapore Holding Pte. Ltd. | Method of manufacturing an electronic device comprising a conductive pad on a protruding-through electrode |
-
1983
- 1983-06-30 JP JP58119143A patent/JPS6010756A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6833609B1 (en) | 1999-11-05 | 2004-12-21 | Amkor Technology, Inc. | Integrated circuit device packages and substrates for making the packages |
| US8154111B2 (en) | 1999-12-16 | 2012-04-10 | Amkor Technology, Inc. | Near chip size semiconductor package |
| US9871015B1 (en) | 2002-11-08 | 2018-01-16 | Amkor Technology, Inc. | Wafer level package and fabrication method |
| US10665567B1 (en) | 2002-11-08 | 2020-05-26 | Amkor Technology, Inc. | Wafer level package and fabrication method |
| US6847099B1 (en) | 2003-02-05 | 2005-01-25 | Amkor Technology Inc. | Offset etched corner leads for semiconductor package |
| US7872343B1 (en) | 2007-08-07 | 2011-01-18 | Amkor Technology, Inc. | Dual laminate package structure with embedded elements |
| US7906855B1 (en) | 2008-01-21 | 2011-03-15 | Amkor Technology, Inc. | Stacked semiconductor package and method of making same |
| US11869829B2 (en) | 2009-01-05 | 2024-01-09 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor device with through-mold via |
| US10811341B2 (en) | 2009-01-05 | 2020-10-20 | Amkor Technology Singapore Holding Pte Ltd. | Semiconductor device with through-mold via |
| US9691734B1 (en) | 2009-12-07 | 2017-06-27 | Amkor Technology, Inc. | Method of forming a plurality of electronic component packages |
| US10546833B2 (en) | 2009-12-07 | 2020-01-28 | Amkor Technology, Inc. | Method of forming a plurality of electronic component packages |
| US9978695B1 (en) | 2011-01-27 | 2018-05-22 | Amkor Technology, Inc. | Semiconductor device including leadframe with a combination of leads and lands and method |
| US9631481B1 (en) | 2011-01-27 | 2017-04-25 | Amkor Technology, Inc. | Semiconductor device including leadframe with a combination of leads and lands and method |
| US8866278B1 (en) | 2011-10-10 | 2014-10-21 | Amkor Technology, Inc. | Semiconductor device with increased I/O configuration |
| US11043458B2 (en) | 2011-11-29 | 2021-06-22 | Amkor Technology Singapore Holding Pte. Ltd. | Method of manufacturing an electronic device comprising a conductive pad on a protruding-through electrode |
| US10090228B1 (en) | 2012-03-06 | 2018-10-02 | Amkor Technology, Inc. | Semiconductor device with leadframe configured to facilitate reduced burr formation |
| US10014240B1 (en) | 2012-03-29 | 2018-07-03 | Amkor Technology, Inc. | Embedded component package and fabrication method |
| US9673122B2 (en) | 2014-05-02 | 2017-06-06 | Amkor Technology, Inc. | Micro lead frame structure having reinforcing portions and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7390996B2 (en) | Placement of ultra-small or ultra-thin discrete components | |
| JPS6010756A (en) | Manufacture of beam-lead type semiconductor device | |
| US5032543A (en) | Coplanar packaging techniques for multichip circuits | |
| US4722130A (en) | Method of manufacturing a semiconductor device | |
| JP2001185519A5 (en) | ||
| JPH11163006A (en) | Method for bonding pellet | |
| TWI718923B (en) | Led chip structure, chip transferring system and chip transferring method | |
| JP2616247B2 (en) | Method for manufacturing semiconductor device | |
| JPS58180043A (en) | Manufacture of semiconductor device | |
| JP2005019571A (en) | Method for packaging chip, and apparatus for manufacturing packaging substrate | |
| JPS61158145A (en) | Processing method for semiconductor substrate | |
| JPS5885551A (en) | Manufacture of semiconductor device | |
| JPH0122981B2 (en) | ||
| JPS61201432A (en) | Manufacture of ic silicon dye composite body having hot meltadhesive on silicon base | |
| JP3328167B2 (en) | Manufacturing method of semiconductor wafer | |
| JP2738070B2 (en) | Die bonding method | |
| JP7233815B2 (en) | Dummy wafer and dummy wafer manufacturing method | |
| JPS61198747A (en) | Manufacture of semiconductor chip | |
| KR20000013544U (en) | Chip mounting board film | |
| JPS59105340A (en) | Manufacture of beam lead type semiconductor device | |
| JPS63107049A (en) | Manufacture of semiconductor device | |
| JPH0341472Y2 (en) | ||
| JP2932847B2 (en) | Method for manufacturing beam lead type semiconductor device | |
| JPH04159712A (en) | Manufacture of semiconductor device | |
| JPS60148150A (en) | Manufacture of semiconductor device |