JPS58180043A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS58180043A JPS58180043A JP57063145A JP6314582A JPS58180043A JP S58180043 A JPS58180043 A JP S58180043A JP 57063145 A JP57063145 A JP 57063145A JP 6314582 A JP6314582 A JP 6314582A JP S58180043 A JPS58180043 A JP S58180043A
- Authority
- JP
- Japan
- Prior art keywords
- wax
- pellet
- wafer
- pellets
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4822—Beam leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dicing (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はビームリード型半導体装置の製造方法に関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a beam lead type semiconductor device.
従来、ビームリード型半導体装置の製造方法は所望のビ
ームリード型半導体素子の形成された半導体基板の上面
にワックスを塗布後、骸ウェハー裏面にレジストにてパ
ターン【形成し、混酸液で半導体つ、バーを選択的に工
、チング除去してペレット状に分離し、次にペレット１
個ずつ分離して再配列するため［１００〜２００”０の
温度０ホ、ドブレート上でワックスを溶しベレット吸着
用治具にてペレットと石英板とを分離後、半導体ペレッ
トに付着しているワックスを、有機溶剤をスプレーガン
で６〜８秒間吹付けて除去し別の配列板に並べていた。Conventionally, the method for manufacturing a beam-lead type semiconductor device is to apply wax to the upper surface of a semiconductor substrate on which a desired beam-lead type semiconductor element is formed, then form a pattern with a resist on the back side of a skeleton wafer, and then form a pattern with a mixed acid solution. The bars are selectively processed and removed to separate them into pellets, and then pellets 1
In order to separate and rearrange the semiconductor pellets one by one, the wax was melted on a dove plate at a temperature of 100 to 200"0, and the pellets were separated from the quartz plate using a pellet adsorption jig, and then attached to the semiconductor pellets. The wax was removed by spraying an organic solvent for 6 to 8 seconds with a spray gun, and then arranged on another array plate.
しかし上記従来のペレットハンドリング方法には以下に
述べるよ５″＆欠点があった。However, the above-mentioned conventional pellet handling method has some disadvantages as described below.
ペレットハンドリングする場合にペレットと石英板とが
ワックスによって貼〕合わさってお〕、このワックスを
１００〜２００”０の温度のホウドブレート上で石英板
を暖めてワックスを溶かし、ペレット吸着用治具にてペ
レットと石英板とを分離後、半導体ペレットの配線面及
び裏面に付着しているワックスを１５〜！９℃室温の有
機溶剤をスプレーガンにて６〜８秒間吹付けてワックス
ｔ除去し別の配列板に並ぺているがワックス洗浄に時間
がかか夛ま九ワックスが完全に取ル奮れない場合もあり
喪。When handling pellets, the pellets and quartz plate are pasted together with wax, and the wax is heated on a houdo plate at a temperature of 100 to 200"0 to melt the wax, and the wax is placed on a pellet adsorption jig. After separating the pellet from the quartz plate, remove the wax adhering to the wiring surface and back surface of the semiconductor pellet by spraying an organic solvent at room temperature of 15 to 9 degrees Celsius for 6 to 8 seconds with a spray gun. Although it is lined up on the array board, it takes a long time to wash the wax, and sometimes the wax cannot be completely removed.
ベレットの配線面及び裏面にワックスが残っているとベ
レットの信頼性及び歩留りを悪くし又ベレットハンドリ
ングの洗浄時間が長いために作業能率を悪くする欠点管
持ってい九。Wax remaining on the wiring surface and back side of the pellet reduces the reliability and yield of the pellet, and also reduces work efficiency due to the long cleaning time required for pellet handling.
本発明は上記欠点を除去し、半導体装置の信頼性及び製
造歩留５ｔ−大幅に向上させることのてきる半導体装置
の製造方法を提供するものである。The present invention eliminates the above-mentioned drawbacks and provides a method for manufacturing a semiconductor device that can significantly improve the reliability and manufacturing yield of the semiconductor device (5T).
本発明の特徴は、ビームリード聾半導体素子の形成され
たウェハーを裏返してワックスを平板に貼付けする工程
と、前記つ、バーを裏面から選択的に工、チング除去し
てペレッ）Ｋ分割する工程と、加熱によシワ、クスを溶
しベレット吸着用治具にて前記平板からベレットを分離
する工程と。The features of the present invention include the step of turning over the wafer on which the beam lead deaf semiconductor device is formed and attaching wax to a flat plate, and the step of selectively etching and removing the bars from the back side and dividing them into pellets (K). and a step of dissolving wrinkles and wax by heating and separating the pellet from the flat plate using a pellet adsorption jig.
前記ベレットに付着しているワックスを暖めた有機溶剤
にて除去する工程と、前記ペレツｌｆ配列する工程とを
含む半導体装置の製造方法にある。The method of manufacturing a semiconductor device includes a step of removing wax adhering to the pellets using a warm organic solvent, and a step of arranging the pellets lf.
以下実施例に基づき図面を参照して本発明の詳細な説明
する。The present invention will be described in detail below based on embodiments and with reference to the drawings.
まず第１図に示すように、所望のビームリード型素子の
形成された半導体ウェハー１を、前記ビームリード４が
下になるように裏返して１例えばスカイコート表どのワ
ックス２１用いて石英などの平板３に貼り付ける。First, as shown in FIG. 1, a semiconductor wafer 1 on which a desired beam lead type element has been formed is turned over so that the beam leads 4 are facing down, and a flat plate made of quartz or the like is coated with wax 21, for example, on the sky coat surface. Paste on 3.
次に前記牛導体りエハー２０裏面にレジストパターンを
形成し、該パターンをマスクにして混酸液を用いて該ク
エハー會選択的にエツチング除去し、第２図に示すよう
にベレットに分離する０次に１００〜２００℃のホ、ド
ブレート７上で石英板３ｔ−暖めてワックス２を溶かし
ペレット吸着用治Ａ６會用いてベレット５を石英板３か
ら分離する。Next, a resist pattern is formed on the back surface of the conductive wafer 20, and using the pattern as a mask, the wafer is selectively etched away using a mixed acid solution, and separated into pellets as shown in FIG. Then, heat the quartz plate 3t on a plate 7 at 100 to 200°C to melt the wax 2, and separate the pellet 5 from the quartz plate 3 using a pellet adsorption jig A6.
次に第３図に示すようにベレット１５の配線面及び裏面
に付着しているワックス１２？５０〜１００℃の温度範
囲の御熱ヒーター１９にて予め有機溶剤を暖めスプレー
ガン２０で吹付時３０〜３５℃範囲の有機溶剤を３〜５
秒間吹付けてワックスを除去し死後、別の配列板ｚ１上
にペレッ）１５￥ｒ配列する。Next, as shown in FIG. 3, the wax 12 attached to the wiring surface and back surface of the pellet 15 is heated in advance with a heating heater 19 with a temperature range of 50 to 100 degrees Celsius, and then sprayed with a spray gun 20 for 30 minutes. 3 to 5 organic solvents in the range of ~35℃
The wax is removed by spraying for a second, and after death, the pellets are arranged on another arrangement plate z1 for 15 yen.
上記のように本発明方法によればベレットの配線面及び
裏面に付着しているワックスを予め暖め九有機溶剤をス
プレーガンにて吹付けるので、短時間でワックスが除去
でキ、シかもベレットにワ、クスが残ることなく、製造
歩留シ及び製品の信頼性が良くなり、しかも短時間のハ
ンドリングが可能になる。As mentioned above, according to the method of the present invention, the wax adhering to the wiring surface and back surface of the pellet is heated in advance and the organic solvent is sprayed with a spray gun, so the wax can be removed in a short time and there is no risk of scratches on the pellet. There is no residue left behind, improving manufacturing yield and product reliability, and short handling times are possible.
第１図乃至第４図は不発１ｊｌｉを説明するための断面
図である。
１・・・・・・半導体チェバー、２．１２・・・・・・
ワックス、３・・・・・・石英板、４．１４・・・・・
・ビームリード、５゜１５・・・・・・ベレット、６．
１６・・・・・・ペレツ） ｌ１着用治具、７・・・・
・・ホットプレート、１８・・・・・・有機溶剤、１９
・・・・・・加熱ヒーター、２０・・・・・・スプレー
ガン、２１・・・・・・ガラス板である。FIGS. 1 to 4 are cross-sectional views for explaining the misfire 1jli. 1... Semiconductor chamber, 2.12...
Wax, 3...Quartz plate, 4.14...
・Beam lead, 5°15...Bellet, 6.
16...Peretz) l1 wearing jig, 7...
...Hot plate, 18...Organic solvent, 19
. . . Heater, 20 . . . Spray gun, 21 . . . Glass plate.
Claims (1)
してワックスで平板に貼付けする工程と、前記ウェハー
を裏面から選択的にエツチング除去してペレットに分割
する工程と、前記ワックスをだしペレット吸着用治具に
て前記平板から前記ペレットを分離する工程と、前記ペ
レットに付着しているワックスを除去する工程とを含む
ことを特徴とする半導体装置の製造方法。A step of turning over a wafer on which a beam lead type semiconductor element has been formed and pasting it on a flat plate with wax, a step of selectively etching the wafer from the back side and dividing it into pellets, and a jig for removing the wax and adsorbing the pellets. A method for manufacturing a semiconductor device, comprising the steps of: separating the pellet from the flat plate; and removing wax adhering to the pellet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57063145A JPS58180043A (en) | 1982-04-15 | 1982-04-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57063145A JPS58180043A (en) | 1982-04-15 | 1982-04-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58180043A true JPS58180043A (en) | 1983-10-21 |
Family
ID=13220782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57063145A Pending JPS58180043A (en) | 1982-04-15 | 1982-04-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58180043A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61102046A (en) * | 1984-10-25 | 1986-05-20 | Nec Corp | Manufacture of semiconductor device |
| JP2015505736A (en) * | 2011-11-18 | 2015-02-26 | ルクスビュー テクノロジー コーポレイション | Method for transferring a microdevice |
| US9463613B2 (en) | 2011-11-18 | 2016-10-11 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
| US9831383B2 (en) | 2011-11-18 | 2017-11-28 | Apple Inc. | LED array |
| US10297712B2 (en) | 2011-11-18 | 2019-05-21 | Apple Inc. | Micro LED display |
-
1982
- 1982-04-15 JP JP57063145A patent/JPS58180043A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61102046A (en) * | 1984-10-25 | 1986-05-20 | Nec Corp | Manufacture of semiconductor device |
| JP2015505736A (en) * | 2011-11-18 | 2015-02-26 | ルクスビュー テクノロジー コーポレイション | Method for transferring a microdevice |
| US9463613B2 (en) | 2011-11-18 | 2016-10-11 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
| US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
| US9831383B2 (en) | 2011-11-18 | 2017-11-28 | Apple Inc. | LED array |
| US10121864B2 (en) | 2011-11-18 | 2018-11-06 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
| US10297712B2 (en) | 2011-11-18 | 2019-05-21 | Apple Inc. | Micro LED display |
| US10607961B2 (en) | 2011-11-18 | 2020-03-31 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
| US11552046B2 (en) | 2011-11-18 | 2023-01-10 | Apple Inc. | Micro device transfer head assembly |
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