JP2016058677A - Wafer and method of manufacturing wafer - Google Patents
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- 238000007747 plating Methods 0.000 claims abstract description 136
- 238000000034 method Methods 0.000 claims abstract description 54
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- 230000008569 process Effects 0.000 description 26
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- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 2
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Abstract
Description
本発明はウェハ及びウェハの製造方法に関する。 The present invention relates to a wafer and a method for manufacturing the wafer.
半導体パッケージング技術の小型化、高集積化に伴ない、ＬＳＩやＩＣなどのチップの接合方法としてワイヤボンディング法からフリップチップ法への移行が広がっており、フリップチップ法においては金属パッドとはんだの接合を目的としたＵＢＭ（アンダーバンプメタル）の形成が必須とされている。 With the downsizing and high integration of semiconductor packaging technology, the transition from wire bonding to flip chip is spreading as a bonding method for chips such as LSI and IC. The formation of UBM (under bump metal) for the purpose of bonding is essential.
ＵＢＭの形成方法としては、低コストが期待される無電解めっき法により形成することが増えてきている。無電解めっきによりＵＢＭを形成する方法としては、半導体ウェハ上の被めっき部分（パッドや配線）をまず清浄化するために、脱脂処理やソフトエッチング処理を行う。次に触媒付与工程を行う。アルミニウム系金属表面にはジンケート処理、銅系金属表面には、パラジウム処理が触媒付与工程となる。その後、無電解ニッケルめっきと置換型無電解金めっきによりＮｉ／Ａｕ皮膜のＵＢＭを形成する方法が一般的である。めっきしたウェハが高温または高湿下に晒される場合には、ＮｉがＡｕ皮膜中に拡散し、表面に析出してＮｉ酸化物が形成されるため、はんだ濡れ性やワイヤボンディング性に悪影響を及ぼす。この場合には、Ｎｉ拡散のバリア層である無電解パラジウムめっきを無電解ニッケルめっきと置換型無電解金めっきの間に行い、Ｎｉ／Ｐｄ／Ａｕ皮膜とすることが一般的である。 As a method for forming UBM, formation by an electroless plating method which is expected to be low in cost is increasing. As a method of forming the UBM by electroless plating, degreasing treatment or soft etching treatment is performed in order to first clean the portion to be plated (pad or wiring) on the semiconductor wafer. Next, a catalyst application process is performed. Zincate treatment is applied to the aluminum metal surface, and palladium treatment is applied to the copper metal surface. Then, the method of forming UBM of a Ni / Au film by electroless nickel plating and substitution type electroless gold plating is common. When the plated wafer is exposed to high temperature or high humidity, Ni diffuses into the Au film and precipitates on the surface to form Ni oxide, which adversely affects solder wettability and wire bondability. . In this case, electroless palladium plating as a Ni diffusion barrier layer is generally performed between electroless nickel plating and displacement electroless gold plating to form a Ni / Pd / Au coating.
上記無電解めっきプロセス（Ｎｉ／Ａｕ、Ｎｉ／Ｐｄ／Ａｕ）の工程において、ウェハ表面または裏面の被めっき箇所以外にシリコンや金属の露出部が存在している場合、Ｎｉめっきまたは／およびＰｄめっきまたは／およびＡｕめっきが析出する。これらめっき析出は、ショート等の品質上の不具合以外に以下の問題が発生する。
Ｎｉめっきの析出：後工程でダイシングやバックグライディングを行った時、刃がＮｉ皮膜に接触すると刃やウェハが割れたり、刃の目詰まりが発生する。
ＰｄまたはＡｕめっきの析出：シリコンとＰｄまたはＡｕ皮膜の密着性が弱いため、ＰｄまたはＡｕ皮膜がウェハから剥離してめっき液中に浮遊する。浮遊したＰｄまたはＡｕ皮膜はパーティクルとなりウェハを汚染する。また、浮遊したＰｄまたはＡｕ皮膜がＰｄまたはＡｕの析出の促進剤として働き、めっき液の寿命が短くなる。
In the above electroless plating process (Ni / Au, Ni / Pd / Au), if there is an exposed portion of silicon or metal in addition to the portion to be plated on the front or back surface of the wafer, Ni plating or / and Pd plating Or / and Au plating is deposited. These plating depositions cause the following problems in addition to defects in quality such as shorts.
Precipitation of Ni plating: When dicing or back gliding is performed in a later process, if the blade comes into contact with the Ni film, the blade or the wafer is cracked or the blade is clogged.
Precipitation of Pd or Au plating: Since the adhesion between silicon and Pd or Au film is weak, the Pd or Au film peels off from the wafer and floats in the plating solution. The floating Pd or Au film becomes particles and contaminates the wafer. Further, the floating Pd or Au film acts as an accelerator for precipitation of Pd or Au, and the life of the plating solution is shortened.
これらの被めっき箇所以外にめっきが析出しないよう、被めっき箇所以外を保護する方法としては、レジストや保護テープが使用され、それぞれ専用装置が市販されているが、レジストや保護テープの場合、傾斜部も含めてベベル部の片面のみの保護になる。例えば、裏面を保護した場合、表面の傾斜部と側面は保護されない。更に、保護テープの場合は、裏面のベベル部の傾斜部も保護が困難である。 In order to prevent plating from depositing in areas other than these areas to be plated, resist and protective tape are used as methods for protecting areas other than the area to be plated, and dedicated devices are commercially available. Only one side of the bevel part including the part is protected. For example, when the back surface is protected, the inclined portion and the side surface of the front surface are not protected. Further, in the case of the protective tape, it is difficult to protect the inclined portion of the bevel portion on the back surface.
また、ＩＧＢＴなどのパワーデバイスは、エネルギー損失低減、放熱性などの特性面の観点から、チップの薄厚化が求められ、薄ウェハにする製造プロセスの確立が強く求められている。また、接合技術としては、ワイヤボンディングやはんだ接合に対する高信頼性を確保する目的として、ウェハ表面のＡｌ電極やＣｕ電極に対してＵＢＭを形成することが増えてきている。
ＵＢＭの形成方法としては、前述の低コストが期待される無電解めっき法により形成することが増えている。一般的なパワーデバイスの製造方法としては、前工程でウェハ内部の構造および表面にＡｌまたはＣｕ電極を形成後、電極上に無電解めっきにより、Ｎｉ／ＡｕまたはＮｉ／Ｐｄ／Ａｕ皮膜を形成する。その後、バックグラインディング（ＢＧ）を行い、ウェハを薄くし、ウェハ裏面に電極（バックメタル（ＢＭ））を形成する。その後、電気特性等の検査を行った後、裏面にダイシングテープを貼り、ダイシングを行い、チップ化する。
In addition, power devices such as IGBTs are required to be thinner in terms of characteristics such as energy loss reduction and heat dissipation, and establishment of a manufacturing process for making a thin wafer is strongly required. In addition, as a bonding technique, in order to ensure high reliability with respect to wire bonding and solder bonding, UBM is increasingly formed on Al and Cu electrodes on the wafer surface.
As a method for forming UBM, the formation by the above-described electroless plating method which is expected to be low in cost is increasing. As a general power device manufacturing method, an Al or Cu electrode is formed on the structure and surface of the wafer in the previous step, and then an Ni / Au or Ni / Pd / Au film is formed on the electrode by electroless plating. . Thereafter, back grinding (BG) is performed to thin the wafer, and an electrode (back metal (BM)) is formed on the back surface of the wafer. Then, after inspecting electrical characteristics and the like, a dicing tape is attached to the back surface, and dicing is performed to form a chip.
しかしながら、上記バックメタル（ＢＭ）工程において、熱がかかり、ＵＢＭのＮｉ皮膜が結晶化し、ウェハが反り、その後の工程ができなくなる。そこで、無電解めっきによるＵＢＭ形成をバックメタル（ＢＭ）形成後に行うことが検討されているが、ウェハが薄いため、無電解めっきによりＵＢＭ形成する際にウェハの割れが発生したり、ハンドリングしにくいという問題がある。また、ＢＭ後にはベベル部はシリコンが露出しており、裏面に金属が形成されているため、そのままめっきするとベベル部や裏面にめっきが形成されてしまう。この析出を防止するためベベルや裏面を保護する必要がある。上記対策として、薄ウェハをガラス等の支持体に両面テープで貼り付けるという検討がされている。しかしながら、裏面は保護され、ウェハの破損も少なくなるが、表面のベベル部は保護されていないため、めっきが析出する。 However, in the back metal (BM) process, heat is applied, the Ni film of UBM is crystallized, the wafer is warped, and subsequent processes cannot be performed. Therefore, it has been studied that UBM formation by electroless plating is performed after back metal (BM) formation. However, since the wafer is thin, cracking of the wafer occurs when forming UBM by electroless plating, and handling is difficult. There is a problem. Further, after the BM, silicon is exposed in the bevel portion and metal is formed on the back surface. Therefore, if the plating is performed as it is, plating is formed on the bevel portion and the back surface. In order to prevent this deposition, it is necessary to protect the bevel and the back surface. As a countermeasure against this, studies have been made to attach a thin wafer to a support such as glass with a double-sided tape. However, although the back surface is protected and damage to the wafer is reduced, plating is deposited because the bevel portion on the front surface is not protected.
ところで、従来、半導体ウェハのベベル部（ウェハの側面及び周辺の傾斜部）近傍は最終的には製品となるチップから切り離され廃棄されるため、半導体製造工程において、ベベル部に上記のようにレジストを設けたり、手間やコストをかけることはなかった。
しかし、近年ＬＳＩへの新材料や新プロセスの導入に伴って、ベベル部の微小パーティクルなどの異物や欠陥がその後の工程でデバイス表面を汚染し、歩留りに大きな影響を与えることが分かってきた。
ベベル部で生じた異物を除去する方法としては、洗浄や研磨により除去する方法が知られている。例えば特許文献１にはベベル研磨工程を有する半導体装置の製造方法が開示されている。これらの方法で析出しためっき物を除去することは可能である。しかしながら、コストや時間がかかるだけでなく、研磨や洗浄により析出しためっき物を除去すると、研磨による割れや刃の目詰まりが問題となる。
By the way, conventionally, the vicinity of the bevel portion (side surface and peripheral inclined portion of the wafer) of the semiconductor wafer is finally separated from the chip as a product and discarded. Therefore, in the semiconductor manufacturing process, the resist is applied to the bevel portion as described above. There was no effort or cost.
However, in recent years, with the introduction of new materials and new processes into LSIs, it has been found that foreign matters and defects such as fine particles in the beveled part contaminate the device surface in the subsequent steps and have a great influence on the yield.
As a method for removing the foreign matter generated in the bevel portion, a method for removing the foreign matter by cleaning or polishing is known. For example, Patent Document 1 discloses a method for manufacturing a semiconductor device having a bevel polishing process. It is possible to remove the plated product deposited by these methods. However, not only cost and time are required, but also removal of the plated product deposited by polishing or cleaning causes problems such as cracking due to polishing and clogging of the blade.
また、特許文献２には、無電解めっき法又は電解めっき法によるめっきの際に非めっき面を保護するための特定の保護テープが開示されている。ウェハの片面に前記保護テープを貼り合わせ、はみ出し量を０．５ｍｍとなるよう切断して用いている。この方法は非めっき面の保護はできるが、ウェハのベベル部、特にめっき面のべベル部に関しては、保護ができない。 Patent Document 2 discloses a specific protective tape for protecting a non-plated surface during plating by an electroless plating method or an electrolytic plating method. The protective tape is bonded to one side of the wafer and cut so that the amount of protrusion is 0.5 mm. Although this method can protect the non-plated surface, it cannot protect the bevel portion of the wafer, particularly the bevel portion of the plated surface.
また、特許文献３には、無電解めっきをする際に、ウェハの裏面及び周縁部を覆うめっき用ウェハ治具が開示されている。２枚の半導体ウェハをその主表面に対する裏面側を対向させるように重ね合わせ、このウェハ２枚の周縁部を一括密封する機構を有し、互いのウェハ主表面領域を露出させて無電解めっきを行うものである。２枚の周縁部を一括密封する機構として、半導体ウェハと電気的に絶縁関係であり、このウェハ周縁部に沿うように配され内部に圧空が与えられる保護用弾性部材と、前記ウェハと電気的に絶縁関係であり、前記ウェハ主表面領域を露出させ前記保護用弾性部材を支持する枠部材と、前記枠部材の着脱部とを具備する治具も開示され、この治具によると、保護用弾性部材による圧力及びそれを支持する枠部材により、めっき液のウェハ裏面への侵入はウェハ周縁部でほぼ確実に阻止されるとある。しかし、治具を留め具で均一に密封することは難しく、２枚のウェハ間にめっき液が染み込む場合がある。また、治具のセットに時間を要し、量産には不向きである。 Patent Document 3 discloses a plating wafer jig that covers the back surface and peripheral edge of a wafer when performing electroless plating. Two semiconductor wafers are stacked so that the back side of the main surface is opposed to each other, and has a mechanism that collectively seals the peripheral portions of the two wafers. Is what you do. As a mechanism for collectively sealing the two peripheral portions, a protective elastic member that is electrically insulated from the semiconductor wafer, is disposed along the peripheral portion of the wafer, and is provided with pressurized air therein, Also disclosed is a jig comprising a frame member that exposes the main surface region of the wafer and supports the elastic member for protection, and a detachable part of the frame member. According to the pressure by the elastic member and the frame member that supports the elastic member, the penetration of the plating solution into the rear surface of the wafer is almost certainly prevented at the peripheral edge of the wafer. However, it is difficult to uniformly seal the jig with a fastener, and the plating solution may penetrate between the two wafers. Moreover, it takes time to set jigs and is not suitable for mass production.
従って、このような問題を生じることがないベベル部を有する半導体ウェハを得る方法が求められている。 Therefore, there is a need for a method for obtaining a semiconductor wafer having a bevel portion that does not cause such a problem.
本発明は、ウェハの製造工程で、めっきにより、ウェハのベベル部にめっき析出物等の異物や欠陥が生じることがなく、歩留まりが良好なウェハを簡便な方法で製造することができるウェハ、及び該ウェハの製造方法を提供することを目的とする。 The present invention provides a wafer capable of producing a wafer having a good yield by a simple method without causing foreign matter and defects such as plating deposits on the bevel portion of the wafer by plating in the wafer production process, and It is an object of the present invention to provide a method for manufacturing the wafer.
本発明者らは鋭意検討を行った結果、めっき前に、少なくともウェハのベベル部を粘着剤付きテープで被覆することにより上記課題が解決されることを見出し、本発明に至った。
即ち本発明は以下のとおりである。
（１）少なくともウェハのベベル部が粘着剤付きテープで被覆されてなることを特徴とするウェハ。
（２）２枚のウェハを非処理面が合わさるように重ね、重ね合わせたウェハのベベル部が粘着剤付きテープで被覆されてなることを特徴とする前記（１）に記載のウェハ。
（３）ウェハと支持体とを、ウェハの非処理面と支持体が合わさるように重ね、重ね合わせたウェハのベベル部が粘着剤付きテープで被覆されてなることを特徴とする前記（１）に記載のウェハ。
（４）前記支持体は、ウェハと同じ投影寸法かまたは大きいことを特徴とする前記（３）に記載のウェハ。
（５）前記非処理面が非めっき面であることを特徴とする前記（２）〜（４）のいずれか一項に記載のウェハ。
（６）前記粘着剤付きテープが破断までの伸びが２０％以上であることを特徴とする前記（１）〜（５）のいずれか一項に記載のウェハ。
（７）少なくともウェハのベベルを粘着剤付きテープで被覆する工程を有することを特徴とするウェハの製造方法。
（８）前記ウェハのベベル部を粘着剤付きテープで被覆する工程は、２枚のウェハを非処理面が合わさるように重ね、重ね合わせたウェハのベベル部を粘着剤付きテープで被覆する工程であることを特徴とする前記（７）に記載のウェハの製造方法。
（９）前記ウェハのベベル部を粘着剤付きテープで被覆する工程は、ウェハと支持体とを、ウェハの非処理面と支持体が合わさるように重ね、重ね合わせたウェハのベベル部を粘着剤付きテープで被覆する工程であることを特徴とする前記（７）に記載のウェハの製造方法。
（１０）前記支持体は、ウェハと同じ投影寸法かまたは大きいことを特徴とする前記（９）に記載のウェハの製造方法。
（１１）少なくともウェハのベベル部を粘着剤付きテープで被覆する工程の後に、ウェハにめっきを行う工程を有することを特徴とする前記（７）〜（１０）のいずれか一項に記載のウェハの製造方法。
（１２）前記めっきが無電解めっきであることを特徴とする前記（１１）に記載のウェハの製造方法。
（１３）前記非処理面が非めっき面であることを特徴とする前記（８）〜（１２）のいずれか一項に記載のウェハの製造方法。
（１４）前記粘着剤付きテープが破断までの伸びが２０％以上であることを特徴とする前記（７）〜（１３）のいずれか一項に記載のウェハの製造方法。
（１５）前記無電解めっきは、無電解Ｎｉめっき／置換型無電解Ａｕめっき、無電解Ｎｉめっき／無電解Ｐｄめっき／置換型無電解Ａｕめっき、無電解Ｎｉめっき／置換型無電解Ａｕめっき／還元型無電解Ａｕめっき、及び無電解Ｎｉめっき／無電解Ｐｄめっき／置換型無電解Ａｕめっき／還元型無電解Ａｕめっきのいずれかであることを特徴とする前記（１２）〜（１４）のいずれか一項に記載のウェハの製造方法。
（１６）めっき後に粘着剤付きテープを剥がす工程を有することを特徴とする前記（１１）〜（１５）のいずれか一項に記載のウェハの製造方法。
（１７）前記ウェハは、半導体用またはインタポーザ用ウェハであることを特徴とする前記（７）〜（１６）のいずれか一項に記載のウェハの製造方法。
As a result of intensive studies, the present inventors have found that the above-mentioned problems can be solved by coating at least the bevel portion of the wafer with a tape with an adhesive before plating, and have reached the present invention.
That is, the present invention is as follows.
(1) A wafer characterized in that at least a bevel portion of the wafer is covered with a tape with an adhesive.
(2) The wafer according to (1) above, wherein two wafers are overlapped so that the non-processing surfaces are aligned, and the bevel portion of the overlapped wafer is covered with a tape with an adhesive.
(3) The wafer and the support are overlapped so that the non-processed surface of the wafer and the support are combined, and the bevel portion of the overlapped wafer is covered with an adhesive tape. The wafer described in 1.
(4) The wafer according to (3), wherein the support has the same projection size or larger than the wafer.
(5) The wafer according to any one of (2) to (4), wherein the non-processed surface is a non-plated surface.
(6) The wafer according to any one of (1) to (5), wherein the adhesive tape has an elongation to break of 20% or more.
(7) A method for producing a wafer, comprising a step of covering at least a bevel of the wafer with a tape with an adhesive.
(8) The step of covering the bevel portion of the wafer with the tape with the adhesive is a step of stacking the two wafers so that the non-processing surfaces are combined, and covering the bevel portion of the overlapped wafer with the tape with the adhesive The method for producing a wafer according to (7), wherein the method is provided.
(9) The step of covering the bevel portion of the wafer with the tape with the adhesive is performed by overlapping the wafer and the support so that the non-processed surface of the wafer and the support are aligned with each other. The method for producing a wafer as described in (7) above, which is a step of covering with a tape.
(10) The method for manufacturing a wafer according to (9), wherein the support has the same projected size as the wafer or a larger size.
(11) The wafer according to any one of (7) to (10), further including a step of plating the wafer after the step of covering at least the bevel portion of the wafer with the tape with the adhesive. Manufacturing method.
(12) The method for producing a wafer according to (11), wherein the plating is electroless plating.
(13) The method for producing a wafer according to any one of (8) to (12), wherein the non-processed surface is a non-plated surface.
(14) The method for producing a wafer according to any one of (7) to (13), wherein the adhesive tape has an elongation to break of 20% or more.
(15) The electroless plating is performed by electroless Ni plating / displacement electroless Au plating, electroless Ni plating / electroless Pd plating / replacement electroless Au plating, electroless Ni plating / replacement electroless Au plating / The above-mentioned (12) to (14), which are any one of reduction type electroless Au plating and electroless Ni plating / electroless Pd plating / replacement type electroless Au plating / reduction type electroless Au plating The manufacturing method of the wafer as described in any one.
(16) The method for producing a wafer according to any one of (11) to (15) above, further comprising a step of peeling the tape with the adhesive after plating.
(17) The method for producing a wafer according to any one of (7) to (16), wherein the wafer is a semiconductor wafer or an interposer wafer.
尚、本発明においてめっき皮膜の層構成を「／」を用いて表す。例えば、前記無電解Ｎｉめっき皮膜／置換型無電解Ａｕめっき皮膜とは、無電解Ｎｉめっきにより形成されたＮｉめっき皮膜と、置換型無電解Ａｕめっきにより形成されたＡｕめっき皮膜が順に積層されていることを表す。 In the present invention, the layer structure of the plating film is represented by “/”. For example, the electroless Ni plating film / replacement type electroless Au plating film is formed by sequentially laminating a Ni plating film formed by electroless Ni plating and an Au plating film formed by substitutional electroless Au plating. Represents that
本発明のウェハ及びウェハの製造方法によると、めっきの工程で、ウェハのベベル部にめっき皮膜が付着するのを防止することができる。その結果、ウェハのベベル部の汚染を防止し、ベベル部にめっき析出物等の異物や欠陥が生じることがない。従って、前記無電解めっきを行う際の問題が発生することがなくなり、歩留まりが良好なウェハを簡便な方法で製造することができる。 According to the wafer and the wafer manufacturing method of the present invention, it is possible to prevent the plating film from adhering to the bevel portion of the wafer in the plating step. As a result, contamination of the bevel portion of the wafer is prevented, and foreign matter and defects such as plating deposits are not generated in the bevel portion. Therefore, the problem in performing the electroless plating does not occur, and a wafer with a good yield can be manufactured by a simple method.
本発明のウェハは、少なくともウェハのベベル部を粘着剤付きテープで被覆されてなる。
本発明のウェハの製造方法は、少なくともウェハのベベル部を粘着剤付きテープで被覆する工程を有する。更に、前記ウェハのベベル部を粘着剤付きテープで被覆する工程の後に、ウェハをめっきする工程を有することが好ましい。
前記粘着剤付きテープで被覆されてなるウェハは、図１−１に示すように、１枚のウェハのベベル部が粘着剤付きテープで被覆されたウェハであっても良い。また、本発明においては少なくともベベル部が粘着剤付きテープで被覆されていれば良く、粘着剤付きテープは、図１−２に示すようにウェハの表裏面の平面にはみ出して、平面部の外周部を被覆していても良い。ウェハ表裏面の平面へはみ出した部分の長さは、ウェハの有効チップが被覆されないようにすれば良い。
前記少なくともウェハのベベル部が粘着剤付きテープで被覆されてなるウェハは、少なくともウェハのベベル部を粘着剤付きテープで被覆する工程により製造される。
ウェハのベベル部を粘着剤付きテープで被覆することにより、ウェハのベベル部を保護することができる。従って、この後のめっき工程において、ベベル部にめっきが付着するのを防止することができる。
また、前記粘着剤付きテープを用いることにより、特殊な治具を使用するなど面倒な操作を行うことなく、容易にベベル部を被覆することができる。
The wafer of the present invention is formed by covering at least the bevel portion of the wafer with an adhesive tape.
The method for producing a wafer of the present invention includes a step of covering at least the bevel portion of the wafer with a tape with an adhesive. Furthermore, it is preferable to have the process of plating a wafer after the process of coat | covering the bevel part of the said wafer with an adhesive tape.
The wafer covered with the adhesive tape may be a wafer in which a bevel portion of one wafer is covered with an adhesive tape as shown in FIG. In the present invention, it is sufficient that at least the bevel portion is covered with a tape with an adhesive, and the adhesive tape protrudes into the plane of the front and back surfaces of the wafer as shown in FIG. The part may be covered. The length of the portion that protrudes from the front and back surfaces of the wafer may be such that the effective chip of the wafer is not covered.
The wafer in which at least the bevel portion of the wafer is coated with an adhesive tape is manufactured by a step of covering at least the bevel portion of the wafer with an adhesive tape.
By covering the bevel portion of the wafer with the adhesive tape, the bevel portion of the wafer can be protected. Therefore, it is possible to prevent plating from adhering to the bevel portion in the subsequent plating step.
Moreover, by using the tape with the adhesive, the bevel portion can be easily covered without performing a troublesome operation such as using a special jig.
また、前記粘着剤付きテープで被覆されてなるウェハは、図２−１または図２−２に示すように、２枚のウェハを非処理面が合わさるように重ね、重ね合わせたウェハのベベル部が粘着剤付きテープで被覆されたウェハであってもよい。重ね合わせる際に、２枚のウェハ間にウェハの傷や破損防止のため、紙やプラスチックで出来たクッション材を入れるとよい。
２枚のウェハの非処理面が合わさるよう重ねた場合、粘着剤付きテープは、図２−１または図２−２に示すように、ウェハの非処理面側のベベル部の傾斜部に接してはいないが、この場合も、本発明においては被覆されているとする。
ウェハの非処理面が合わさるように重ね合わせ、その２つのウェハを粘着剤付きテープで貼り合わせることにより、２枚のウェハのベベル部に加え、２枚のウェハの非処理面（裏面）も保護することができる。従って、この後のめっき工程において、ベベル部にめっきが付着するのを防止することができるのに加え、ウェハの非処理面にめっきが付着するのを防止することができる。
さらに２枚のウェハのベベル部を一度に被覆することができるので、効率的である。
前記２枚のウェハを非処理面が合わさるように重ね、重ね合わせたウェハのベベル部が粘着剤付きテープで被覆されたウェハは、２枚のウェハを非処理面が合わさるように重ね、重ね合わせたウェハのベベル部を粘着剤付きテープで被覆する工程により製造される。
In addition, as shown in FIG. 2-1 or FIG. 2-2, the wafer covered with the adhesive tape is overlapped so that the non-processed surfaces are aligned with each other, and the bevel portion of the stacked wafers May be a wafer coated with an adhesive tape. When stacking, a cushion material made of paper or plastic is preferably inserted between the two wafers to prevent damage or damage to the wafers.
When the two wafers are stacked so that the non-processing surfaces are aligned, the tape with adhesive is in contact with the inclined portion of the bevel portion on the non-processing surface side of the wafer, as shown in FIG. 2-1 or FIG. In this case, it is assumed that the coating is applied.
By superimposing the non-processed surfaces of the wafers together and bonding the two wafers with adhesive tape, in addition to the bevels of the two wafers, the non-processed surface (back surface) of the two wafers is also protected. can do. Therefore, in the subsequent plating step, it is possible to prevent the plating from adhering to the bevel portion and to prevent the plating from adhering to the non-processed surface of the wafer.
Furthermore, since the bevel portions of two wafers can be coated at a time, it is efficient.
The two wafers are overlapped so that the non-processed surfaces are aligned, and the wafers where the beveled portions of the overlapped wafers are covered with adhesive tape are overlapped and overlapped so that the non-processed surfaces are aligned. The wafer is manufactured by a process of covering the bevel portion of the wafer with an adhesive tape.
また、ウェハの厚みが薄い場合は、前記粘着剤付きテープで被覆されたウェハは、図３−１または図３−２に示すように、ウェハと支持体とを、ウェハの非処理面と支持体が合わさるように重ね、重ね合わせたウェハのベベル部が粘着剤付きテープで被覆されたウェハであってもよい。重ね合わせる際に、２枚のウェハ間にウェハの傷や破損防止のため、紙やプラスチックで出来たクッション材を入れるとよい。
この場合も、粘着剤付きテープは、図３−１または図３−２に示すように、ウェハの非処理面側のベベル部の傾斜部に接してはいないが、この場合も、本発明においては被覆されているとする。
ウェハに支持体を重ね合わせ、粘着剤付きテープで貼り合わせることにより、ウェハは割れにくくなり、ハンドリングしやすくなる。また、ウェハのベベル部と非処理面を保護することができ、この後のめっき工程において、ベベル部にめっきが付着するのを防止することができるのに加え、ウェハの非処理面にめっきが付着するのを防止することができる。
従って、バックメタル後にＵＢＭ形成を行うことも可能となる。
When the wafer is thin, the wafer covered with the adhesive tape supports the wafer and the support as shown in FIG. 3-1 or FIG. 3-2 and supports the non-processed surface of the wafer. It may be a wafer in which the body is overlapped and the bevel portion of the overlapped wafer is covered with an adhesive-attached tape. When stacking, a cushion material made of paper or plastic is preferably inserted between the two wafers to prevent damage or damage to the wafers.
Also in this case, as shown in FIG. 3-1 or FIG. 3-2, the adhesive tape is not in contact with the inclined portion of the bevel portion on the non-processing surface side of the wafer. Is covered.
By superimposing a support on the wafer and pasting it together with a tape with an adhesive, the wafer is hard to break and is easy to handle. In addition, it is possible to protect the beveled portion and the non-processed surface of the wafer, and in the subsequent plating process, it is possible to prevent the plating from adhering to the beveled portion. Adhesion can be prevented.
Therefore, it is possible to perform UBM formation after back metal.
前記支持体としては、ウェハと同じ投影寸法かまたは大きいことが好ましい。支持体の大きさが、ウェハと同じ投影寸法かまたは大きいことにより、ウェハの非処理面の全面を保護することができ、ウェハをめっき治具にセットしたり、搬送中に外周部が欠けることを防止できる。支持体の大きさは、テープの幅との関係もあり、特に規定はないが、ウェハよりも大幅に大きいとテープのコストがかかるため、ウェハの投影寸法と同じか、大きくても、ウェハの投影寸法より大きい部分の長さが１ｃｍ以下であることが好ましい。 The support preferably has the same projected dimension as the wafer or is larger. Since the size of the support is the same or larger than the projected size of the wafer, the entire surface of the non-processed surface of the wafer can be protected, and the wafer is set on a plating jig or the outer periphery is missing during transportation. Can be prevented. The size of the support is related to the width of the tape and is not particularly specified. However, if the size of the support is much larger than the wafer, the cost of the tape increases. The length of the portion larger than the projected dimension is preferably 1 cm or less.
前記支持体としては、ウェハの破損や外周部の欠け等を防ぐための保護板として機能すれば、どのような支持体であってもよい。例えば、ガラス、シリコンウェハ、ＰＰＳ、ＰＥＥＫ等が挙げられる。ガラスやシリコンウェハの場合には、０．６ｍｍ厚以上が好ましい。ＰＰＳ、ＰＥＥＫは１ｍｍ厚以上が好ましい。 The support may be any support as long as it functions as a protective plate for preventing breakage of the wafer, chipping of the outer peripheral portion, and the like. For example, glass, a silicon wafer, PPS, PEEK, etc. are mentioned. In the case of glass or silicon wafer, a thickness of 0.6 mm or more is preferable. PPS and PEEK preferably have a thickness of 1 mm or more.
シリコンが露出しているベベル部を粘着剤付きテープで保護することにより、ベベル部がめっきプロセス中に処理液に接触することを防止し、めっき工程において、めっきが析出しなくなる。また、粘着剤付きテープとして、成分がめっき液中に溶出しないものを用いることにより、めっきに関して悪影響を与えない。 By protecting the bevel part where the silicon is exposed with a tape with an adhesive, the bevel part is prevented from coming into contact with the treatment solution during the plating process, and plating does not precipitate in the plating step. Moreover, there is no adverse effect on plating by using a tape with an adhesive that does not elute the components in the plating solution.
（ウェハ）
前記ウェハとしては、半導体用ウェハまたはインタポーザとなる基材が好ましく、限定的ではないが、約５０〜３００ｍｍ径の円盤状に形成されており、シリコン、又は、ＧａＡｓ等の化合物半導体を用いて形成されている。
(Wafer)
The wafer is preferably a semiconductor wafer or a base material to be an interposer, and is not limited, but is formed in a disk shape having a diameter of about 50 to 300 mm, and is formed using a compound semiconductor such as silicon or GaAs. Has been.
（粘着剤付きテープ）
粘着剤付きテープとしては、無電解めっきプロセスの処理液に耐性のあるものであれば、市販のテープを使用することが簡便で好ましい。ダイシングテープやバックグライディングテープで使用しているテープは半導体で実績があり、より好ましい。
粘着剤付きテープの基材としては、ポリエステル、ポリイミド、ポリプロピレン、ポリエチレン、ＰＥＴ、ＰＴＦＥ等が挙げられる。
粘着剤としては、アクリル系、ゴム系、シリコン系等が挙げられる。特にアクリル系粘着剤等の、使用時には粘着性が高く、使用後加熱や紫外線を照射すると発泡あるいは固まり、基材との粘着性がほとんどなくなり剥がれやすくなるタイプが好ましい。ゴム系は合成ゴム、シリコン系はジメチルシリコンの一般的な粘着剤が使用できる。
(Adhesive tape)
As a tape with an adhesive, it is convenient and preferable to use a commercially available tape as long as it is resistant to the treatment liquid of the electroless plating process. Tapes used in dicing tapes and back gliding tapes have a proven record in semiconductors, and are more preferable.
Examples of the base material for the pressure-sensitive adhesive tape include polyester, polyimide, polypropylene, polyethylene, PET, and PTFE.
Examples of the pressure-sensitive adhesive include acrylic, rubber, and silicon. In particular, an acrylic pressure-sensitive adhesive or the like that is highly adhesive at the time of use and foams or hardens when heated or irradiated with ultraviolet rays after use and hardly sticks to the base material and easily peels off is preferable. Synthetic rubber can be used for rubber, and dimethyl silicon can be used for silicone.
テープをウェハのベベル部に貼る際、しわができないように貼る必要がある。しわができるとめっきプロセスの処理液が侵入してベベル部にめっき析出したり、処理液で汚染される恐れがある。ベベル部に貼る際、しわができにくい方法としては、テープにテンションをかけて伸ばしながら貼ることが好ましく、テープの破断までの伸びが２０％以上あればしわがほとんどできずしみこみが発生しないので好ましい。
こうしたテープを使用して、テープを３％以上伸ばしながら貼ることが好ましい。
When affixing the tape to the bevel portion of the wafer, it is necessary to affix the tape so that it does not wrinkle. If wrinkles are formed, the processing solution of the plating process may intrude and deposit on the bevel portion or may be contaminated with the processing solution. When sticking to the bevel part, it is preferable to apply the tape while applying tension as it is difficult to wrinkle, and if the elongation to break of the tape is 20% or more, the wrinkle can hardly be formed and the squeaking does not occur. .
Using such a tape, it is preferable to apply the tape while stretching it by 3% or more.
テープの破断までの伸びは、テープをテープの長さ方向に引っ張り、破断した時のテープの伸びを％で示したものである。例えば２０％の伸びであれば、１００ｍｍのテープが１２０ｍｍまで伸びることを示す。 The elongation until the tape breaks is the percentage elongation of the tape when the tape is pulled in the length direction of the tape and broken. For example, an elongation of 20% indicates that a 100 mm tape extends to 120 mm.
粘着剤付きテープの厚さは、テープを貼る際のテンション（トルク）にもよるが、０．０１〜０．７ｍｍ程度が好ましい。トルクが高い場合は、厚くすることができる。
厚さが０．７ｍｍを超えると、始終端部で重なる部分に隙間ができるのでめっき液が浸入しやすくなる。
粘着剤付きテープは、手作業で貼ることもできるが、機械を用いて貼ることが効率的であり好ましい。
The thickness of the pressure-sensitive adhesive tape is preferably about 0.01 to 0.7 mm, although it depends on the tension (torque) when the tape is applied. If the torque is high, it can be thickened.
If the thickness exceeds 0.7 mm, a gap is formed in the overlapping portion at the start and end portions, so that the plating solution can easily enter.
The adhesive-attached tape can be applied manually, but it is efficient and preferable to apply it using a machine.
前記粘着剤付きテープで被覆する工程の後に、めっきを行う工程を有することが好ましい。前記めっきとしては電解めっき、無電解めっきを挙げることができ、無電解めっきが好ましい。前記ウェハの非処理面としては非めっき面が挙げられる。
前記無電解めっきは、無電解Ｎｉめっき／置換型無電解Ａｕめっき、無電解Ｎｉめっき／無電解Ｐｄめっき／置換型無電解Ａｕめっき、無電解Ｎｉめっき／置換型無電解Ａｕめっき／還元型無電解Ａｕめっき、無電解Ｎｉめっき／無電解Ｐｄめっき／置換型無電解Ａｕめっき／還元型無電解Ａｕめっきのいずれかであることが好ましい。無電解めっきによりアンダーバンプメタルを形成することが好ましく、無電解Ｎｉめっき、置換型無電解Ａｕめっき、還元型無電解Ａｕめっき、無電解Ｐｄめっきとしては、アンダーバンプメタルを形成する一般的なめっき液を用い、公知の方法で形成することができる。
It is preferable to have the process of plating after the process of coat | covering with the said tape with an adhesive. Examples of the plating include electrolytic plating and electroless plating, and electroless plating is preferable. Examples of the non-processed surface of the wafer include a non-plated surface.
The electroless plating includes electroless Ni plating / replacement type electroless Au plating, electroless Ni plating / electroless Pd plating / replacement type electroless Au plating, electroless Ni plating / replacement type electroless Au plating / reduction type non-reduction. Electrolytic Au plating, electroless Ni plating / electroless Pd plating / replacement type electroless Au plating / reduction type electroless Au plating is preferable. It is preferable to form an under bump metal by electroless plating. As electroless Ni plating, substitutional electroless Au plating, reduction electroless Au plating, and electroless Pd plating, general plating for forming an under bump metal is used. It can form by a well-known method using a liquid.
めっき・乾燥工程を行った後に粘着剤付きテープを剥がす工程を有していても良い。
粘着剤テープの粘着剤として、使用時には粘着性が高く、使用後加熱や紫外線を照射すると発泡あるいは固まり、基材との粘着性がほとんどなくなり剥がれやすくなるタイプのアクリル系粘着剤等も用いることができる。このようなタイプのアクリル系粘着剤等を用いた場合は、めっき・乾燥工程後に、所定の加熱や紫外線を照射した後剥がすと容易に剥がすことが可能となる。
You may have the process of peeling an adhesive tape after performing a plating and a drying process.
As an adhesive for the adhesive tape, it is also possible to use an acrylic adhesive that is highly adhesive when in use and foams or hardens when heated or irradiated with ultraviolet rays, and hardly sticks to the base material and easily peels off. it can. When such a type of acrylic pressure-sensitive adhesive is used, it can be easily peeled off after the plating / drying process and after the predetermined heating or ultraviolet irradiation.
実施例１〜９、比較例１〜２
（使用したウェハ）
ベベル部（外周から２ｍｍ）がシリコン剥き出しで表面は１００μｍ角のＡｌＳｉ（Ｓｉ：１％）のパッドを形成した６２５μｍ厚の６インチシリコンウェハ。
（被覆方法）
実施例１〜９については、ウェハの表裏の外周から３ｍｍまで（ウェハのベベル部と表裏面の平面部１ｍｍまで）を表１のテープ（厚さ０．０８ｍｍ）で図１−２に示すように保護した。テープで被覆する際は、手作業で、テンションをかけ、テープを約５％伸ばしながら貼り付けを行った。
比較例１のウェハは、粘着剤付きテープで被覆していないものである。
比較例２のウェハは、シリコンゴム（０．３ｍｍ厚）をテンションをかけて実施例１と同様に巻きつけて、最後に接着剤で固定したものである。
Examples 1-9, Comparative Examples 1-2
(Wafer used)
A 6-inch silicon wafer having a thickness of 625 μm, in which the beveled part (2 mm from the outer periphery) is exposed and the surface is formed with a 100 μm-square AlSi (Si: 1%) pad.
(Coating method)
As for Examples 1 to 9, as shown in FIG. 1-2, the tape (thickness: 0.08 mm) from Table 1 to 3 mm from the outer circumference of the front and back of the wafer (up to 1 mm of the bevel portion of the wafer and the flat portion of the front and back surfaces) is shown in FIG. Protected. When covering with a tape, it was affixed while manually applying tension and stretching the tape by about 5%.
The wafer of Comparative Example 1 is not covered with an adhesive tape.
The wafer of Comparative Example 2 is obtained by winding silicon rubber (0.3 mm thick) in the same manner as in Example 1 with tension, and finally fixing with an adhesive.
（めっき試験）
実施例１〜９の下記表１のテープでベベル部を被覆したウェハと、比較例１のベベル部を被覆していないウェハ、比較例２のベベル部をシリコンゴムで被覆したウェハについて、以下の工程でめっき皮膜を形成した。
上記ウェハについて、以下の工程でＮｉ（３μｍ厚）／Ｐｄ（０．０５μｍ厚）／Ａｕ（０．０５μｍ厚）めっき皮膜を形成した。
脱脂→水洗→ソフトエッチング→水洗→一次酸浸漬→水洗→一次ジンケート→水洗→二次酸浸漬→水洗→二次ジンケート→水洗→無電解Ｎｉめっき→水洗→無電解Ｐｄめっき→水洗→置換型無電解Ａｕめっき→還元型無電解Ａｕめっき
(Plating test)
About the wafer which coat | covered the bevel part with the tape of following Table 1 of Examples 1-9, the wafer which does not coat | cover the bevel part of the comparative example 1, and the wafer which coat | covered the bevel part of the comparative example 2 with silicon rubber, A plating film was formed in the process.
A Ni (3 μm thickness) / Pd (0.05 μm thickness) / Au (0.05 μm thickness) plating film was formed on the wafer by the following steps.
Degreasing → Washing → Soft etching → Washing → Primary acid soaking → Washing → Primary zincate → Washing → Secondary acid soaking → Water washing → Secondary zincate → Water washing → Electroless Ni plating → Water washing → Electroless Pd plating → Water washing → No replacement Electrolytic Au plating → Reduced electroless Au plating
めっきプロセスで使用した液は以下の通り。
脱脂液：ＵＡＣ−１６、ＪＸ日鉱日石金属製、５０℃、５分
ソフトエッチング液：ＳＫＤ、ＪＸ日鉱日石金属製、４０℃、５分
一次酸浸漬液：５０％硝酸、関東化学製、２２℃、３０秒
一次ジンケート液：ＵＡＺ１００、ＪＸ日鉱日石金属製、２２℃、３０秒
二次酸浸漬液：５０％硝酸、関東化学製、２２℃、１５秒
二次ジンケート液：ＵＡＺ１００、ＪＸ日鉱日石金属製、２２℃、１５秒
無電解Ｎｉめっき液：ＵＢＮ−１８、ＪＸ日鉱日石金属製、８０℃、１５分
無電解Ｐｄめっき液：ＣＡ−４００、ＪＸ日鉱日石金属製、５０℃、２．５分
置換型無電解Ａｕめっき液：ＦＡ−５０１、ＪＸ日鉱日石金属製、７５℃、２０分
還元型無電解Ａｕめっき液：ＴＡ−６００、ＪＸ日鉱日石金属製、５０℃、５分
The solutions used in the plating process are as follows.
Degreasing solution: UAC-16, JX Nippon Mining & Metals, 50 ° C, 5 minutes Soft etching solution: SKD, JX Nippon Mining & Metals, 40 ° C, 5 minutes Primary acid immersion solution: 50% nitric acid, manufactured by Kanto Chemical, 22 ° C, 30 seconds Primary zincate solution: UAZ100, JX Nippon Mining & Metals, 22 ° C, 30 seconds Secondary acid immersion solution: 50% nitric acid, manufactured by Kanto Chemical, 22 ° C, 15 seconds Secondary zincate solution: UAZ100, JX Nippon Mining & Metals, 22 ° C, 15 seconds Electroless Ni plating solution: UBN-18, JX Nippon Mining & Metals, 80 ° C, 15 minutes Electroless Pd plating solution: CA-400, JX Nippon Mining & Metals, 50 ° C., 2.5 minutes Replacement type electroless Au plating solution: FA-501, made by JX Nippon Mining & Metals, 75 ° C., 20 minutes Reduced type electroless Au plating solution: TA-600, made by JX Nippon Mining & Metals, 50 ° C, 5 minutes
（結果）
めっきを行った後に、ウェハを乾燥し、実施例１〜９のウェハは粘着剤付きテープを剥離し、比較例２のウェハはシリコンゴムを剥離し、ベベル部を観察した。
なお、粘着剤でアクリル系紫外線硬化タイプまたは熱硬化タイプを使用した場合は、それぞれ紫外線照射または加熱を行い、粘着剤を剥がしやすくしてから剥離した。
テープを剥がした部分が濡れている場合は、上記のプロセスで用いた処理液の浸み込みがあったとした。
粘着剤付きテープで被覆した実施例１〜９のウェハはベベル部にめっきの析出は見られなかった。めっき後の被覆部の外観を観察したところ、めっき前と同じで異常はなかった。一方、ベベル部を被覆していない比較例１のウェハ及びベベル部をシリコンゴムで被覆した比較例２のウェハはベベル部にＮｉ及び／またはＡｕめっきが析出した。
(result)
After plating, the wafer was dried, the wafers of Examples 1 to 9 were peeled off the adhesive tape, the wafer of Comparative Example 2 was peeled off the silicon rubber, and the bevel portion was observed.
In addition, when the acrylic ultraviolet curable type or the thermosetting type was used as the pressure-sensitive adhesive, each of the pressure-sensitive adhesive was peeled off after being subjected to ultraviolet irradiation or heating so that the pressure-sensitive adhesive was easily peeled off.
When the part from which the tape was peeled was wet, it was assumed that the treatment liquid used in the above process had penetrated.
In the wafers of Examples 1 to 9 coated with the adhesive-attached tape, no plating deposition was observed on the bevel portion. When the appearance of the coated part after plating was observed, it was the same as before plating and there was no abnormality. On the other hand, the Ni and / or Au plating was deposited on the beveled portion of the wafer of Comparative Example 1 in which the beveled portion was not coated and the wafer of Comparative Example 2 in which the beveled portion was coated with silicon rubber.
実施例１０〜１８、比較例３〜４
（使用したウェハ）
ベベル部（外周から２ｍｍ）がシリコン剥き出しで表面は１００μｍ角のＡｌＳｉ（Ｓｉ：１％）のパッドを形成した６２５μｍ厚の６インチシリコンウェハ（裏面は全面アルミニウムで蒸着）
（被覆方法）
実施例１０〜１８は、図２−２に示すように、２枚のウェハの非めっき面を合わさるように重ねて、ウェハのベベル部および平面部約１ｍｍまでを粘着剤付きテープ（厚さ０．０８ｍｍ）でに貼り合わせた。使用したテープは表２参照。テープで被覆する際は、手作業で、テンションをかけ、テープを約５％伸ばしながら貼り付けを行った。
Examples 10-18, Comparative Examples 3-4
(Wafer used)
A 6-inch silicon wafer with a thickness of 625 μm with a beveled part (2 mm from the outer circumference) exposed and a 100 μm square AlSi (Si: 1%) pad formed on the surface (the back surface is vapor-deposited with aluminum)
(Coating method)
In Examples 10 to 18, as shown in FIG. 2-2, the non-plated surfaces of the two wafers are overlapped so that the bevel portion and the flat portion of the wafer are approximately 1 mm in thickness. .08 mm). See Table 2 for the tapes used. When covering with a tape, it was affixed while manually applying tension and stretching the tape by about 5%.
（めっき試験）
実施例１０〜１８の下記表２のテープで、上記のようにベベル部を被覆したウェハと、比較例３のベベル部を被覆していない１枚のウェハ、または比較例４の、ベベルを被覆しないで、裏面にテープ貼り機により実施例１３のテープと同様のテープを貼り付けた１枚のウェハについて、実施例１と同様の工程でめっき皮膜を形成した。
（結果）
めっきを行った後に、ウェハを乾燥し、粘着剤付きテープを剥離し、ベベル部を観察した。
なお、粘着剤でアクリル系紫外線硬化タイプまたは熱硬化タイプを使用した場合は、それぞれ紫外線照射または加熱を行い、粘着剤を剥がしやすくしてから剥離した。
テープを剥がした部分が濡れている場合は、上記のプロセスで用いた処理液の浸み込みがあったとした。
粘着剤付きテープで被覆した実施例１０〜１８のウェハはベベル部や裏面にめっきの析出は見られなかった。めっき後の被覆部の外観を観察したところ、めっき前と同じで異常はなかった。一方、ベベル部を被覆していない比較例３のウェハはベベル部と裏面にＮｉまたはＡｕめっきが析出した。また、裏面テープを貼りつけた比較例４のウェハは裏面のめっき析出はなかったがベベル部にめっき析出が発生した。
(Plating test)
The tapes of Examples 10 to 18 shown below in Table 2 were coated with a wafer coated with the bevel as described above and one wafer not coated with the bevel of Comparative Example 3, or the bevel of Comparative Example 4 Instead, a plating film was formed in the same process as in Example 1 on one wafer in which the same tape as that in Example 13 was adhered to the back surface by a tape applicator.
(result)
After plating, the wafer was dried, the adhesive-attached tape was peeled off, and the bevel portion was observed.
In addition, when the acrylic ultraviolet curable type or the thermosetting type was used as the pressure-sensitive adhesive, each of the pressure-sensitive adhesive was peeled off after being subjected to ultraviolet irradiation or heating so that the pressure-sensitive adhesive was easily peeled off.
When the part from which the tape was peeled was wet, it was assumed that the treatment liquid used in the above process had penetrated.
In the wafers of Examples 10 to 18 coated with the adhesive tape, no plating deposition was observed on the beveled portion or the back surface. When the appearance of the coated part after plating was observed, it was the same as before plating and there was no abnormality. On the other hand, in the wafer of Comparative Example 3 in which the bevel portion was not coated, Ni or Au plating was deposited on the bevel portion and the back surface. Further, the wafer of Comparative Example 4 to which the back surface tape was attached did not have plating deposition on the back surface, but plating deposition occurred on the bevel portion.
実施例１９〜２７、比較例５〜６
（使用した薄ウェハ）
ベベル部（外周から２ｍｍ）がシリコン剥き出しで表面は１００μｍ角のＡｌＳｉ（Ｓｉ：１％）のパッドを形成した１００μｍ厚の６インチシリコンウェハ（裏面は全面アルミニウムで蒸着）
（被覆方法）
実施例１９〜２７は、図３−２に示すように、前記ウェハの非めっき面とガラス板（厚さ１ｍｍ）が合わさるように重ねて、ウェハのベベル部および平面部約１ｍｍまでとガラス板の側面およびそれに続く外周部約３ｍｍまでを粘着剤付きテープ（厚さ０．０８ｍｍ）で貼り合わせた。使用したテープは表３参照。テープで被覆する際は、手作業で、テンションをかけ、テープを約５％伸ばしながら貼り付けを行った。
ガラス板は、投影寸法がウェハと同じ大きさのものを用いた。
Examples 19-27, Comparative Examples 5-6
(Thin wafer used)
A 100-μm thick 6-inch silicon wafer with a beveled part (2 mm from the outer periphery) and a 100 μm-square AlSi (Si: 1%) pad formed on the surface (deposited with aluminum on the back)
(Coating method)
In Examples 19 to 27, as shown in FIG. 3-2, the non-plated surface of the wafer and the glass plate (thickness 1 mm) are overlapped so that the bevel portion and the plane portion of the wafer are about 1 mm. The side surfaces and the subsequent outer peripheral part up to about 3 mm were bonded together with a tape with an adhesive (thickness: 0.08 mm). See Table 3 for the tapes used. When covering with a tape, it was affixed while manually applying tension and stretching the tape by about 5%.
A glass plate having a projection size the same as that of the wafer was used.
（めっき試験）
実施例１９〜２７の下記表３のテープでベベル部を被覆したウェハと、比較例５としてベベル部を被覆していない１枚のウェハ、または比較例６としてベベル部を被覆せずに、裏面にテープ貼り機により実施例２２のテープと同様のテープを貼り付けた１枚のウェハについて、実施例１と同様の工程でめっき皮膜を形成した。
（結果）
めっきを行った後に、ウェハを乾燥し、粘着剤付きテープを剥離し、ベベル部を観察した。
なお、粘着剤でアクリル系紫外線硬化タイプまたは熱硬化タイプを使用した場合は、それぞれ紫外線照射または加熱を行い、粘着剤を剥がしやすくしてから剥離した。
テープを剥がした部分が濡れている場合は、上記のプロセスで用いた処理液の浸み込みがあったとした。
粘着剤付きテープで被覆した実施例１９〜２７のウェハはベベル部や裏面にめっきの析出は見られなかった。めっき後の被覆部の外観を観察したところ、めっき前と同じで異常はなかった。一方、ベベル部を被覆していない比較例５のウェハは製造中に破損した。また、裏面テープを貼りつけた比較例６のウェハは裏面の析出はなかったがベベル部にめっき析出が発生した。
(Plating test)
The wafer which covered the bevel part with the tape of following Table 3 of Examples 19-27, and one wafer which does not coat | cover the bevel part as Comparative Example 5, or the back surface without covering the bevel part as Comparative Example 6 A plating film was formed in the same process as in Example 1 on one wafer on which a tape similar to that in Example 22 was applied using a tape applicator.
(result)
After plating, the wafer was dried, the adhesive-attached tape was peeled off, and the bevel portion was observed.
In addition, when the acrylic ultraviolet curable type or the thermosetting type was used as the pressure-sensitive adhesive, each of the pressure-sensitive adhesive was peeled off after being subjected to ultraviolet irradiation or heating so that the pressure-sensitive adhesive was easily peeled off.
When the part from which the tape was peeled was wet, it was assumed that the treatment liquid used in the above process had penetrated.
In the wafers of Examples 19 to 27 coated with the adhesive tape, no plating deposition was observed on the beveled portion or the back surface. When the appearance of the coated part after plating was observed, it was the same as before plating and there was no abnormality. On the other hand, the wafer of Comparative Example 5 that did not cover the bevel portion was damaged during manufacture. Further, the wafer of Comparative Example 6 to which the back surface tape was applied did not deposit on the back surface, but plating deposition occurred on the bevel portion.
Claims (17)
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