JPS60210827A - Gallium arsenide semiconductor device - Google Patents
Gallium arsenide semiconductor deviceInfo
- Publication number
- JPS60210827A JPS60210827A JP59067920A JP6792084A JPS60210827A JP S60210827 A JPS60210827 A JP S60210827A JP 59067920 A JP59067920 A JP 59067920A JP 6792084 A JP6792084 A JP 6792084A JP S60210827 A JPS60210827 A JP S60210827A
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- Prior art keywords
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- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims 3
- 229910001245 Sb alloy Inorganic materials 0.000 claims 1
- FGSKFBCYWQLIET-UHFFFAOYSA-N [Sb].[Ge].[Au] Chemical compound [Sb].[Ge].[Au] FGSKFBCYWQLIET-UHFFFAOYSA-N 0.000 claims 1
- 239000002140 antimony alloy Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 22
- 239000006059 cover glass Substances 0.000 abstract description 5
- 229910005936 Ge—Sb Inorganic materials 0.000 abstract 2
- 239000007767 bonding agent Substances 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明はヒ化ガリウム（ＧａＡｓ）太陽電池などのＧ
ａＡｓ半導体装置に係り、特にその電極材料に関するも
のである。[Detailed Description of the Invention] [Technical Field of the Invention] This invention relates to the use of G
The present invention relates to aAs semiconductor devices, and particularly to electrode materials thereof.
以下、ＧａＡｓ太陽電池を例にとり説明する。 Hereinafter, a description will be given taking a GaAs solar cell as an example.
第１図について、従来のＧａＡｓ太陽電池の一例の製造
手順を示すことによって、この従来例の構成を説明する
こと処する。Referring to FIG. 1, the configuration of this conventional example will be explained by showing the manufacturing procedure of an example of a conventional GaAs solar cell.
第１図（蜀〜（Ｄ） ＪＩ′ｉこの従来例を製造する方
法の主要段階の状態を示す断面図である。FIG. 1 (D) is a sectional view showing the main stages of the method for manufacturing this conventional example.
まず、第１図（Ａ）Ｋ示すようＫ ％２５０〜３０（１
ｍ程度の厚さを有するｎ形ＧａＡｓ基板（１）の−力の
主面上に数μｍ程度の厚さを有するｐ形ＧａＡｅ層（２
）を形成し、ｐ形ＧａＡｓ層（２）の表面上に窒化シリ
コン膜などからなる反射防止膜（３）を形成する。First, as shown in Figure 1 (A), K%250~30(1
A p-type GaAe layer (2) with a thickness of about several μm is placed on the main surface of the n-type GaAs substrate (1) with a thickness of about m
), and an antireflection film (3) made of a silicon nitride film or the like is formed on the surface of the p-type GaAs layer (2).
次に１第１図（Ｂ） Ｋ示すように１反射防止膜（３）
の一方の端縁部を除去してＰ形ＧａＡｓ層（２）の表面
の一方の端縁部を露出させる。次いで、ｐ形ＧａＡｓ層
（２）の露出表面上およびｎ形ＧａＡ３基板（１）の他
方の主面上にそれぞれ金・ゲルマニウム−ニッケル合金
Ｃ以下「ＡｕＧｅ−Ｎ１Ｊと呼ぶ）または金・スズ合金
（以下１’−ＡｕｓＳｎＪと呼ぶ）の蒸着膜からなるｐ
側電極（４）およびｎ側電極（５）を形成し、これらの
電極（４）および（５）とｐ形ＧａＡｓ層（２）および
ｎ形ＧａＡｓ基板（１）のそれぞれとの良好なオーミッ
ク性接触を得るための３５０〜５００℃程度の高温の熱
処理を行う。Next, 1 anti-reflection coating (3) as shown in Figure 1 (B)
One edge of the P-type GaAs layer (2) is removed to expose one edge of the surface of the P-type GaAs layer (2). Next, gold-germanium-nickel alloy C (hereinafter referred to as “AuGe-N1J”) or gold-tin alloy ( (hereinafter referred to as 1'-AusSnJ)
A side electrode (4) and an n-side electrode (5) are formed, and these electrodes (4) and (5) have good ohmic properties with the p-type GaAs layer (2) and the n-type GaAs substrate (1), respectively. Heat treatment at a high temperature of about 350 to 500° C. is performed to obtain contact.
次に、第１図（Ｃ）に示すように、反射防止膜（３）の
表面上に接着剤（６）でカバーガラス（７）を貼シ付け
る。Next, as shown in FIG. 1(C), a cover glass (7) is pasted onto the surface of the antireflection film (3) using an adhesive (6).
最後に、第１図（Ｄ）に示すように、ｐ側電極（４）お
よびｎ側電極（５）の表面上にそれぞれｐ＠電極取り出
し端子（８）およびｎ側電極取り出し端子（９）を取り
付けると、この従来例の太陽電池が得られる。Finally, as shown in Figure 1(D), a p@electrode extraction terminal (8) and an n-side electrode extraction terminal (9) are attached on the surfaces of the p-side electrode (4) and n-side electrode (5), respectively. Once installed, this conventional solar cell is obtained.
この従来例の太陽電池では、ｎ形ＧａＡｓ基板（１）の
実際の動作領域がｐ形ＧａＡｓ層（２）と接する表面部
の１０μｍ程度の厚さの部分のみで、その他の部分は電
気的特性の面からは不必要である。しかもＧａＡ３材料
が高価であるので、製造コストを低減するためには、ｎ
形ＧａＡｓ基板（１）の厚さを可能な限シ薄くする必要
があった。特に、人工衛星用太陽電池の場合には、性能
指数の一つである出力／重量を大きくするためにも、ｎ
形ＧａＡｓ基板（１）の厚さを薄くすることが要求され
ている。In this conventional solar cell, the actual operating area of the n-type GaAs substrate (1) is only the approximately 10 μm thick part of the surface that contacts the p-type GaAs layer (2), and the other parts have electrical characteristics. It is unnecessary from this point of view. Moreover, GaA3 material is expensive, so in order to reduce manufacturing costs, n
It was necessary to make the thickness of the GaAs substrate (1) as thin as possible. In particular, in the case of solar cells for satellites, n
There is a need to reduce the thickness of the shaped GaAs substrate (1).
ところが、この従来例の太陽電池では、ｎ形ＧａＡ３基
板（１）の厚さを薄くすると、ｎ形ＧａＡｓ基板（１）
が割れやすくなり、その取シ扱いが極めて困難になるの
で、ｎ形ＧａＡａ基板（１）の厚さを１００μｍ以下に
することは容易ではなかった。However, in this conventional solar cell, when the thickness of the n-type GaAs substrate (1) is reduced, the thickness of the n-type GaAs substrate (1) is reduced.
It has not been easy to reduce the thickness of the n-type GaAa substrate (1) to 100 μm or less because it becomes easily broken and handling becomes extremely difficult.
そこで、ｎ形ＧａＡ３基板の一力の主面側ＫＧａＡｓ太
陽電池を作成し、しかるのちｎ形ＧａＡｓ基板の他力の
主面部の所要厚さをエツチング除去した薄形ＧａＡｓ太
陽電池が先行技術によって開発されている。Therefore, a thin GaAs solar cell was developed using prior art, in which a KGaAs solar cell was created on the side of one main surface of an n-type GaA3 substrate, and then the required thickness of the other main surface of the n-type GaAs substrate was removed by etching. has been done.
第２図について、この先行技術になる薄形ＧａＡｓ太陽
電池の製造手順を示すことによって、この先行技術にな
る薄形ＧａＡ３太陽電池の構成を説明すること処する。Referring to FIG. 2, the structure of the thin GaA3 solar cell according to the prior art will be explained by showing the manufacturing procedure of the thin GaAs solar cell according to the prior art.
第２図（Ａ）〜（Ｃ）はこの先行技術になる薄形ＧａＡ
ｓ太陽電池を製造する方法の主要段階の状態を示す断面
図である。Figures 2 (A) to (C) show thin GaA according to this prior art.
FIG. 3 is a cross-sectional view showing the main stages of a method for manufacturing a solar cell.
図において、第１図に示した符号と同一符号は同等部分
を示す。In the figure, the same symbols as those shown in FIG. 1 indicate equivalent parts.
まず、第２図（Ａ）に示すように１従来例の第１図（Ｂ
）に示した段階において、ｎ側電極（５）が形成されな
い状態に形成したのちに、Ａｕ５Ｇｅ＋＋ＮｉまたはＡ
ｕ・８ｎの蒸着膜からなるｐ側電極（４）のｐ形ＧａＡ
ｓ層（２）との良好なオーミック性接触を得るための３
５０〜５００℃の高温の熱処理を行う。次いで、ｐ側電
極（４）の表面上にｐ側電極数シ出し端子（８）を取り
付ける。First, as shown in FIG. 2(A), a conventional example is shown in FIG. 1(B).
), after forming the n-side electrode (5) without forming it, Au5Ge++Ni or A
p-type GaA of the p-side electrode (4) consisting of a vapor deposited film of u.8n
3 to obtain good ohmic contact with the s-layer (2)
Heat treatment is performed at a high temperature of 50 to 500°C. Next, a p-side electrode number terminal (8) is attached on the surface of the p-side electrode (4).
次に、Ａ２図（Ｂ）に示すように、反射防止膜（３）の
表面上、ｐ側電極（４）の表面上およびｐ側電極数り出
し端子（８）の所要部分上を覆うように接着剤（６）で
カバーガラス（７）を貼り付ける。Next, as shown in FIG. Attach the cover glass (7) to the top with adhesive (6).
次に、第２図（Ｃ）に示すように、ｎ形ＧａＡｓ基板（
１）の裏面部にエツチング処理を施して、ｎ形ＧａＡｓ
基板（１）を１００μｍ以下の厚さを有するｎ形ＧａＡ
ｓ基板（１ａ）にする。Next, as shown in FIG. 2(C), an n-type GaAs substrate (
1) Etching the back surface of n-type GaAs
The substrate (1) is an n-type GaA having a thickness of 100 μm or less.
s substrate (1a).
次に、第２図（Ｄ）に示すように、ｎ形ＧａＡｓ基板（
１ａ）の裏面上にＡｕｅＧｅ＊ＮｉまたはＡｕ＊８ｎの
蒸着膜からなるｎ側電極（５）を形成し、ｎ側電極（５
）の表面上にｎ側電極取り出し端子（９）を取り付ける
と、この先行技術になる薄形ＧａＡｓ太陽電池が得られ
る。Next, as shown in FIG. 2(D), an n-type GaAs substrate (
1a), an n-side electrode (5) made of a deposited film of AueGe*Ni or Au*8n is formed on the back surface of the n-side electrode (5).
), a thin GaAs solar cell according to this prior art is obtained by attaching an n-side electrode lead terminal (9) on the surface of the cell.
ところで、この先行技術になる薄形ＧａＡｓ太陽電池で
は、１００μｍ以下の厚さの薄いｎ形ＧａＡａ基板（ｌ
ａ）の機械的強度をカバーガラス（７）によって補強す
ることができるので、以降の段階における取り扱いによ
ってｎ形ＧａＡｓ基板（１ａ）が割れるのをなくすこと
ができる。しかし、カバーガラス（７）が接着剤（６）
によって反射防止膜（３）の表面上、ｐ側電極（４）の
表面上およびｐ側電極数り出し端子（８）の所要部分上
に貼り付けられているので、；５５０〜５００°Ｃ程度
の高温の熱処理を行うことが不可能となり、ｎ側電極（
５）のｎ形Ｇ ａＡｓ基板（１ａ）との良好なオーミッ
ク性接触が得られないという欠点があった。By the way, this prior art thin GaAs solar cell uses a thin n-type GaAa substrate (l) with a thickness of 100 μm or less.
Since the mechanical strength of a) can be reinforced by the cover glass (7), it is possible to prevent the n-type GaAs substrate (1a) from cracking during handling in subsequent steps. However, the cover glass (7) is glued (6)
Since it is pasted on the surface of the antireflection film (3), on the surface of the p-side electrode (4), and on the required part of the p-side electrode number terminal (8), the temperature is about 550 to 500°C. It became impossible to perform high-temperature heat treatment on the n-side electrode (
There was a drawback that good ohmic contact with the n-type GaAs substrate (1a) of 5) could not be obtained.
この発明は、かかる欠点を除去する目的でなされたもの
で、ｎ形ＧａＡｓ半導体層の表面上に金・ゲルマニウム
・アンチモン（以下ｒＡｕ＋＋Ｇｅ、ｅｓｂＪ ト呼ぶ
）の蒸着膜からなるｎ側電極が形成されるようにするこ
とによって、熱処理を行うことなしにｎ側電極のｎ形Ｇ
ａＡｓ半導体層との良好なオーミック性接触が得られる
ＧａＡｓ半導体装置を提供するものである。This invention was made with the aim of eliminating such drawbacks, and an n-side electrode made of a deposited film of gold, germanium, and antimony (hereinafter referred to as rAu++Ge, esbJ) is formed on the surface of an n-type GaAs semiconductor layer. By doing this, the n-type G of the n-side electrode can be formed without heat treatment.
The present invention provides a GaAs semiconductor device that can obtain good ohmic contact with an aAs semiconductor layer.
発明者らが行った研究によって、ｎ形ＧａＡｓ半導体層
の表面上にＡｕ−Ｇｅ＋＋Ｓｂの蒸着膜からなるｎ側電
極を形成した場合には、熱処理を行うことなしに、ｎ側
電極のｎ形ＧａＡｓ半導体層との良好なオーミック性接
触が得られることが判明した。According to research conducted by the inventors, when an n-side electrode made of a vapor-deposited film of Au-Ge++Sb is formed on the surface of an n-type GaAs semiconductor layer, the n-type GaAs of the n-side electrode can be removed without heat treatment. It has been found that good ohmic contact with the semiconductor layer can be obtained.
この発明は、発明者らの研究に基づいてなされたもので
ある。This invention was made based on research by the inventors.
第３図はこの発明の一実施例の薄形ＧａＡｓ太陽電池を
示す断面図である。FIG. 3 is a sectional view showing a thin GaAs solar cell according to an embodiment of the present invention.
図において、第１図および第２図に示した符号と同一符
号は同等部分を示す。（５ａ）はこの実施例でのｎ形Ｇ
ａＡｅ半導体層であるｎ形ＧａＡａ基板（１ａ）の一方
の主面上に形成されたＡｕ＋＋Ｇｅ＊Ｓｂの蒸着膜から
なるｎ側電極である。In the figures, the same symbols as those shown in FIGS. 1 and 2 indicate equivalent parts. (5a) is n-type G in this example
This is an n-side electrode made of a vapor deposited film of Au++Ge*Sb formed on one main surface of an n-type GaAa substrate (1a) which is an aAe semiconductor layer.
この実施例の構成は、ｎ側電極（５ａ〕以外は第２図（
Ｄ）Ｋ示した先行技術になる薄形ＧａＡｓ太陽電池の構
成と同様である。The configuration of this example is shown in Figure 2 (except for the n-side electrode (5a)).
D) The structure is similar to the prior art thin GaAs solar cell shown in K.
この実施例では、熱処理を行うことなしに、ｎ側電極（
５ａ）のｎ形ＧａＡｓ基板（１ａ）との良好なオーミッ
ク性接触が得られる。In this example, the n-side electrode (
Good ohmic contact with the n-type GaAs substrate (1a) of 5a) is obtained.
なお、この実施例では、薄形ＧａＡｓ太陽電池を例にと
り述べたが、この発明は、ｎ形ＧａＡ３半導体層の表面
上に形成されたｎ側電極を有するＧａＡｓ半導体装置一
般に適用できる。、
〔発明の効果〕
以上、説明したように、この発明のＧａＡｓ半導体装置
では、ｎ形ＧａＡｓ半導体層の表面上にＡｕ・Ｇｅ ｅ
８ｂの蒸着膜からなるｎ側電極が形成されるようにした
ので、熱処理を行うことなしに、ｎ側電極のｎ形ＧａＡ
ｓ半導体層との良好なオーミック性接触が得られる。Although this embodiment has been described using a thin GaAs solar cell as an example, the present invention can be applied to GaAs semiconductor devices in general having an n-side electrode formed on the surface of an n-type GaA3 semiconductor layer. [Effects of the Invention] As explained above, in the GaAs semiconductor device of the present invention, Au.Ge e is formed on the surface of the n-type GaAs semiconductor layer.
Since the n-side electrode made of the vapor-deposited film 8b was formed, the n-type GaA of the n-side electrode was formed without heat treatment.
A good ohmic contact with the s semiconductor layer can be obtained.
第１図は従来の太陽電池の一例を製造する方法の主要段
階の状態を順次示す断面図、第２図は先行技術になる薄
形ＧａＡ３太陽電池を製造する方法の主要段階の状態を
示す断面図、第３図はこの発明の一実施例の薄形ＧａＡ
ｓ太陽電池を示す断面図である。
図において、（１ａ）はｎ形ＧａＡｓ基板（ｎ形ＧａＡ
ｓ半導体層）、（５ａ）はｎ側電極である。
なお、図中同一符号はそれぞれ同一または相当部分を示
す。
代理人大岩増雄
第３図
手続補正書（自発）
１、事件の表示 特願昭５９−０６７９２０号２、発明
の名称 ヒ化ガリクム半導体装置３、補正をする者
代表者片山仁へ部
４、代理人
５、補正の対象
明細書の発明の詳細な説明の欄および図面の簡単な説明
の欄
６、補正の内容
（１） 明細書の第２頁第３行にｒ数へ程度の厚さ」と
あるのを「数μｍ以下の厚さ」と訂正する。
（２）同、第２頁第７行および第７行〜第８行に「一方
の端縁部」とあるのを「一部」と訂正する。
（３）同、第２頁第１θ行〜第１３行に「金、ゲルマニ
ウム、ニッケル合金・・・・・・・・・ｎ側電極（５）
を形成し、」とあるのを［金、亜鉛（Ａｕ 、Ｚｎ ）
、銀、亜鉛（Ａｇ、Ｚｎ ）などからなるｐ形電極（４
）および金、ゲルマニウム、ニッケル（Ａｕ 、Ｇｅ
、Ｎｉ ）、金、スズ（Ａｕ、Ｓｍ）などからなるｎ形
電極（５）を形成し、」と訂正する。
（４） 同、第２頁第１９行、第２頁第２０行、第４頁
第１７行、第４頁第１７行、第４頁第１８行、第５頁第
１行に２箇所、第５頁第１９行〜第２０行および第５頁
第２０行にｒｐ側電極」とあるのをｒｐ形電極」と訂正
する。
（５）同、第２頁第２０行、第３頁第１行、第５頁第１
Ｏ行に２箇所、第６頁第３行、第６頁第９行、第６頁第
１１行、第６頁第１７行、第６頁第１８行、第７頁第８
行、第７頁舘９行、第７頁第１２行〜第１３行、第７頁
第１７行、第８頁第２行、第８頁第３行〜第４行および
第８頁第１４行に「ｎ側電極」とあるのをｒｎ形電極」
と訂正する。
（６）第４頁第１３行〜第１５行にｒｎ側電極（５）・
・・・・・”’ｐ側電極（４）の」とあるをｒ Ａｕ
、Ｚｎ、 、 Ａｇ 、Ｚｎなどからなるｐ形電極（４
）を形成し、」と訂正する。
以上Figure 1 is a cross-sectional view sequentially showing the main stages of a method for manufacturing an example of a conventional solar cell, and Figure 2 is a cross-sectional view showing the main stages of a prior art method for manufacturing a thin GaA3 solar cell. Figure 3 shows a thin GaA film according to an embodiment of the present invention.
s is a cross-sectional view showing a solar cell. In the figure, (1a) is an n-type GaAs substrate (n-type GaAs
s semiconductor layer), (5a) is an n-side electrode. Note that the same reference numerals in the figures indicate the same or corresponding parts. Attorney Masuo Oiwa Figure 3 Procedural amendment (spontaneous) 1. Indication of the case Japanese Patent Application No. 59-067920 2. Name of the invention Gallicum arsenide semiconductor device 3. Person making the amendment Representative Hitoshi Katayama Department 4. Agent Person 5, Detailed Description of the Invention Column and Brief Description of Drawings Column 6 of the Specification Subject to Amendment, Contents of the Amendment (1) "Thickness to the extent of r number" in the 3rd line of the 2nd page of the specification. The statement has been corrected to "thickness of several μm or less." (2) Same, on page 2, line 7 and lines 7 to 8, the phrase ``one edge'' is corrected to ``part.'' (3) On page 2, lines 1θ to 13, "gold, germanium, nickel alloy...... n-side electrode (5)
[gold, zinc (Au, Zn)]
, p-type electrode (4) made of silver, zinc (Ag, Zn), etc.
) and gold, germanium, nickel (Au, Ge
, Ni), gold, tin (Au, Sm), etc., is formed.'' (4) Same, 2 places on page 2, line 19, page 2, line 20, page 4, line 17, page 4, line 17, page 4, line 18, page 5, line 1, In lines 19 to 20 of page 5 and line 20 of page 5, the words ``rp-side electrode'' are corrected to ``rp-type electrode.'' (5) Same, page 2, line 20, page 3, line 1, page 5, line 1
2 places on line O, page 6, line 3, page 6, line 9, page 6, line 11, page 6, line 17, page 6, line 18, page 7, line 8
line, page 7, line 9, page 7, line 12-13, page 7, line 17, page 8, line 2, page 8, line 3-4, and page 8, line 14 The line that says ``n-side electrode'' is the rn-type electrode.''
I am corrected. (6) rn side electrode (5) on page 4, line 13 to line 15.
・・・・・・The phrase ``'p-side electrode (4)'' is r Au
, Zn, , Ag, Zn, etc.
) and correct it as ``. that's all
Claims (1)
ｎ側電極を有するものにおいて、上記ｎ側電極が金・ゲ
ルマニウム・アンチモン合金からなることを特徴とする
ヒ化ガリウム半導体装置０(1) A gallium arsenide semiconductor device 0 having an n-side electrode formed on the surface of an n-type gallium arsenide semiconductor layer, wherein the n-side electrode is made of a gold-germanium-antimony alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59067920A JPS60210827A (en) | 1984-04-03 | 1984-04-03 | Gallium arsenide semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59067920A JPS60210827A (en) | 1984-04-03 | 1984-04-03 | Gallium arsenide semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60210827A true JPS60210827A (en) | 1985-10-23 |
Family
ID=13358824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59067920A Pending JPS60210827A (en) | 1984-04-03 | 1984-04-03 | Gallium arsenide semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60210827A (en) |
-
1984
- 1984-04-03 JP JP59067920A patent/JPS60210827A/en active Pending
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