JPS60210596A - 粒子線エピタキシヤル装置の成長速度制御方法 - Google Patents

粒子線エピタキシヤル装置の成長速度制御方法

Info

Publication number
JPS60210596A
JPS60210596A JP59064822A JP6482284A JPS60210596A JP S60210596 A JPS60210596 A JP S60210596A JP 59064822 A JP59064822 A JP 59064822A JP 6482284 A JP6482284 A JP 6482284A JP S60210596 A JPS60210596 A JP S60210596A
Authority
JP
Japan
Prior art keywords
particle beam
substrate
chamber
corpuscular radiation
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59064822A
Other languages
English (en)
Japanese (ja)
Other versions
JPH054360B2 (enExample
Inventor
Morihiko Kimata
木俣　守彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Shimazu Seisakusho KK
Original Assignee
Shimadzu Corp
Shimazu Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp, Shimazu Seisakusho KK filed Critical Shimadzu Corp
Priority to JP59064822A priority Critical patent/JPS60210596A/ja
Publication of JPS60210596A publication Critical patent/JPS60210596A/ja
Publication of JPH054360B2 publication Critical patent/JPH054360B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59064822A 1984-03-31 1984-03-31 粒子線エピタキシヤル装置の成長速度制御方法 Granted JPS60210596A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59064822A JPS60210596A (ja) 1984-03-31 1984-03-31 粒子線エピタキシヤル装置の成長速度制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59064822A JPS60210596A (ja) 1984-03-31 1984-03-31 粒子線エピタキシヤル装置の成長速度制御方法

Publications (2)

Publication Number Publication Date
JPS60210596A true JPS60210596A (ja) 1985-10-23
JPH054360B2 JPH054360B2 (enExample) 1993-01-19

Family

ID=13269326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59064822A Granted JPS60210596A (ja) 1984-03-31 1984-03-31 粒子線エピタキシヤル装置の成長速度制御方法

Country Status (1)

Country Link
JP (1) JPS60210596A (enExample)

Also Published As

Publication number Publication date
JPH054360B2 (enExample) 1993-01-19

Similar Documents

Publication Publication Date Title
US20140299577A1 (en) Apparatus and method for surface processing of a substrate
US4521286A (en) Hollow cathode sputter etcher
US6667475B1 (en) Method and apparatus for cleaning an analytical instrument while operating the analytical instrument
Friedl et al. Influence of H2 and D2 plasmas on the work function of caesiated materials
US5397895A (en) Photoionization mass spectroscopy flux monitor
Yehia-Alexe et al. Considerations on hydrogen isotopes release from thin films by laser induced ablation and laser induced desorption techniques
KR20080082614A (ko) 기체의 도입을 통한 이온 주입 공정 중에 오염을 완화하여표면 특성을 수정하는 시스템 및 방법
GB2358955A (en) Charged particle beam exposure apparatus and Method
US3876305A (en) Demountable sputtering cathode for atomic absorption spectroscopy
JPH054360B2 (enExample)
US4842679A (en) Method for the production of semiconductor devices
JPH0810720B2 (ja) 表面揮発性物質検知装置
JPH09195044A (ja) 薄膜の形成方法
JP2000123996A (ja) 原子状ラジカル測定方法及び装置
JPS61132591A (ja) 粒子線エピタキシヤル装置の粒子線強度制御装置
JPH054359B2 (enExample)
JPH055797B2 (enExample)
JPS60210594A (ja) 粒子線エピタキシャル装置
KR102305099B1 (ko) 혼합 가스 클러스터 이온 빔 생성 장치 및 이를 포함하는 질량 분석기
JPS5931550A (ja) プラズマエツチング中のラジカルおよび励起分子測定装置
JPS61219790A (ja) 粒子線エピタキシヤル装置
JPH0123937B2 (enExample)
JPS61219792A (ja) 粒子線エピタキシヤル装置における粒子線強度検出制御装置
JP2004294275A (ja) 深さ方向元素分布測定方法及び深さ方向元素分布測定装置
JPH05243283A (ja) エピタキシャル成長装置及び成長方法