JPS60206168A - 赤外線電荷結合装置 - Google Patents

赤外線電荷結合装置

Info

Publication number
JPS60206168A
JPS60206168A JP59063951A JP6395184A JPS60206168A JP S60206168 A JPS60206168 A JP S60206168A JP 59063951 A JP59063951 A JP 59063951A JP 6395184 A JP6395184 A JP 6395184A JP S60206168 A JPS60206168 A JP S60206168A
Authority
JP
Japan
Prior art keywords
shift register
background radiation
charge
signal
radiation signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59063951A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0570948B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Sakai
宏 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59063951A priority Critical patent/JPS60206168A/ja
Publication of JPS60206168A publication Critical patent/JPS60206168A/ja
Publication of JPH0570948B2 publication Critical patent/JPH0570948B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/157—CCD or CID infrared image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP59063951A 1984-03-30 1984-03-30 赤外線電荷結合装置 Granted JPS60206168A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59063951A JPS60206168A (ja) 1984-03-30 1984-03-30 赤外線電荷結合装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59063951A JPS60206168A (ja) 1984-03-30 1984-03-30 赤外線電荷結合装置

Publications (2)

Publication Number Publication Date
JPS60206168A true JPS60206168A (ja) 1985-10-17
JPH0570948B2 JPH0570948B2 (enrdf_load_stackoverflow) 1993-10-06

Family

ID=13244146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59063951A Granted JPS60206168A (ja) 1984-03-30 1984-03-30 赤外線電荷結合装置

Country Status (1)

Country Link
JP (1) JPS60206168A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774339A (ja) * 1993-09-01 1995-03-17 Nec Corp 固体撮像素子及びその駆動方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114479A (en) * 1980-02-14 1981-09-09 Fujitsu Ltd Solid-state image pickup device
JPS5847378A (ja) * 1981-09-17 1983-03-19 Canon Inc 撮像素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114479A (en) * 1980-02-14 1981-09-09 Fujitsu Ltd Solid-state image pickup device
JPS5847378A (ja) * 1981-09-17 1983-03-19 Canon Inc 撮像素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774339A (ja) * 1993-09-01 1995-03-17 Nec Corp 固体撮像素子及びその駆動方法

Also Published As

Publication number Publication date
JPH0570948B2 (enrdf_load_stackoverflow) 1993-10-06

Similar Documents

Publication Publication Date Title
KR102212100B1 (ko) 분할-게이트 조건부-재설정 이미지 센서
Taylor CCD and CMOS imaging array technologies: technology review
US5962844A (en) Active pixel image cell with embedded memory and pixel level signal processing capability
JP3962431B2 (ja) 高ダイナミックレンジのリニア出力を有する画像センサ
RU2529882C2 (ru) Устройство формирования изображения и система камеры
JP4457134B2 (ja) Ｃｍｏｓを基礎とするピクセル構造の高ダイナミックレンジの読み出し信号を得る方法及びそのｃｍｏｓを基礎とするピクセル構造
JP3559640B2 (ja) 光電変換装置
US20100208115A1 (en) Solid-state image sensor
US9225920B2 (en) Staring focal plane sensor systems and methods for imaging large dynamic range scenes
CA2355307C (en) Fabricating a hybrid imaging device
JP3927696B2 (ja) 撮像装置
JP4761491B2 (ja) 固体撮像装置及びそれを用いた撮像システム
JP4663956B2 (ja) 光検出装置
US5369357A (en) CCD imager with test structure
JPH07226495A (ja) 減少されたフォトダイオード間のクロストークを有するｃｃｄ画像センサー
US6646245B2 (en) Focal plane averaging implementation for CMOS imaging arrays using a split photodiode architecture
Kawabata et al. A 1.8 e− temporal noise over 90dB dynamic range 4k2k super 35mm format seamless global shutter CMOS image sensor with multiple accumulation shutter technology
JP5350659B2 (ja) 固体撮像装置
EP0915518A2 (en) Parasitic capacitance reduction for passive charge read out
JPS60206168A (ja) 赤外線電荷結合装置
Fereyre et al. CMOS image sensors are entering a new age
US5504527A (en) Image sensor with improved charge transfer inefficiency characteristics
JP4212447B2 (ja) 固体撮像装置および電子カメラ
JPS60178662A (ja) 半導体装置
Nakamura et al. A random noise reduction method for an amorphous silicon photoconversion layer overlaid CCD imager

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees