JPS60198432A - Generating device for electron beam drawing data - Google Patents

Abstract

PURPOSE:To obtain the device that generates drawing data which allows proximity effect corrections at a high speed by correcting the size of a drawing pattern according to an exposure level. CONSTITUTION:A bit pattern memory 4 is controlled by an address generating circuit 15 and a controller 6 with every clock 15 so that the position of a small matrix on a large matrix is obtained. Column data read out of the memory 4 is held in a register group 7 and shifted to a small matrix register group 8 with a next cock 16. The output of the register group 8 is weighted by controlling the output of a register group 9 through a gate group 10, whose output is summed up by an adding circuit 11 and stored in one point of exposure amount map memory 13 as the amount of exposure at the center coordinates of the small matrix through a register 12. An address signal 17 from the controller 16 is passed through an address switch circuit 14 to obtain a control signal 19, with which the address of the memory 13 is controlled. Thus, the amount of exposure at every coordinate point is calculated at a high speed to generate an exposure amount map.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to an electron beam lithography data creation device, and in particular to an apparatus for creating lithography data at high speed that can correct distortion of a lithography pattern caused by the so-called proximity effect in an electron beam lithography device. The present invention relates to an electron beam lithography data creation device suitable for.

[Background of the invention]

Conventionally, in order to correct the distortion of drawing patterns due to the proximity effect, the program that creates drawing data takes adjacent patterns, calculates the influence, and decomposes the drawing patterns, controls the drawing exposure amount, and adjusts the drawing pattern dimensions. It was designed to create drawing data that underwent correction processing such as changes. However, the amount of drawing data has recently become enormous as the drawing target has become LSI, and even if correction calculations are performed using a high-speed large-scale electronic computer, it takes a large amount of calculation time to obtain a sufficient effect. It has come to be necessary.

Therefore, it is almost impossible to create data using a small computer, and this has led to the problem that when processing only with software, it is necessary to make do with simple processing at the expense of accuracy. [Object of the Invention] The present invention has been made in view of the above, and its purpose is to provide an electron beam lithography data creation device that can create lithography data capable of performing proximity effect correction at high speed. [Summary of the Invention] The present invention is characterized by a bit-bang memory for storing drawing data corresponding to drawing figures in a certain area, a means for reading a part of this memory in a matrix, and a method for reading the above-mentioned reading data. A first register group that holds the output matrix-like bit patterns, a second register group that stores values for weighting each likelihood of the bit patterns, and a second register group that stores values for weighting each likelihood of the bit pattern. A group of arithmetic circuits that perform weighting operations between the second register group, a means for adding the outputs of the arithmetic circuit group to determine the influence of peripheral bumps on each point of the bit bump, and a means for calculating the influence of the peripheral bumps on each point of the bit pattern. There is an exposure map memory that corrects and stores the uncorrected drawing exposure map by inputting the influence of each address for each address.

The structure is more similar to that of a disassembly circuit that disassembles and outputs corrected baton data.

[Embodiments of the invention]

Embodiments of the present invention shown in FIGS. 7 to 9 will be described below.
This will be explained in detail with reference to FIGS. 6 and 10.

First, the baton distortion due to the proximity effect will be explained using FIG. 1. FIG. 1 is a diagram showing the convention of drawing a button due to the proximity effect. When drawing a button indicated by a solid line as shown in FIGS. 1(a) and 1(b), drawing distortion as indicated by a dotted line occurs. One is the phenomenon of isolated small batons becoming even smaller, as shown in Figure 1(a), and the other is the phenomenon of adjacent battens becoming smaller, as shown in Figure 1(b). This is a phenomenon in which the clouds ooze out as if they are attracting each other, and the gaps between the small batons become even smaller. Figure 1 (C) shows the ideal exposure amount (solid line) and the effective exposure amount (dotted line).
This figure corresponds to FIGS. 1(a) and 1(b). In this way, exposure amount distortion occurs due to mutual effects.

Next, the principle of the present invention will be explained using FIGS. 2 to 6. FIG. 2 is a diagram showing an example of bit bang display in a certain area. As shown in FIG. 2, the drawing buttons of a certain area are formed into a screen on a matrix and are represented as pit buttons. In Fig. 2(a), area 1 surrounded by a solid line is the drawing area, area 2 surrounded by a dashed-dotted line is an area for observing the influence of the surroundings, and area surrounded by a dashed-double line. 3 is an area to store 0" for calculation. Each button in Figure 2 (a) can be expressed by a bit pattern as shown in Figure 2). A certain point on this large matrix If we consider, as shown in Figure 3, if
If there is a slam in the periphery (center 5th point of interest), it will be influenced by the surrounding coordinate points with a weight smaller than 1. That is, the exposure amount at one point is expressed as the sum of its own exposure amount and the exposure lid weighted by surrounding bumps, that is, outside the area. However, in reality, the influence of points separated by 2 to 3 μm or more can be ignored.

By considering the influence of peripheral bit bumps for each point on the large matrix using this small matrix, it is possible to obtain the exposure-bump when exposure is performed without correction. Fourth
The figure shows the exposure amount map obtained in this way, where the exposure (fi button) shown by the dotted line is applied to the drawing button shown by the solid line.On this exposure lid button, as shown in FIG. The contour is traced, and this contour is divided into several blocks depending on the exposure level.The φ mark in the figure is an example of a dividing point, and in the example shown in FIG. By decomposing the figure according to the vertices and correcting the drawing button dimensions based on the exposure level as shown in FIG. 6, it is possible to obtain the desired figure when exposed.

Next, examples of the present invention will be described. FIG. 7 is a block diagram showing an embodiment of the exposure amount map creation device of the electron beam lithography data creation device of the present invention. In FIG. 7, the bit-bang memory 4 is configured to determine the position of the small matrix on the large matrix and the next oldest column data 1) by the address generation circuit 5 and the controller 6 that controls it.
It is controlled every 15 clocks to obtain 14+b24*b34 (3 examples).

The column data read from the hit button memory 4 is held by the register group 7 and shifted to the small matrix register group 8 at the next clock 16. The output of the small matrix of the small matrix register group 8 created in this way is a register group (
In FIG. 7, the outputs of all to ass) 9 are connected to the gate group 1o
weighted by controlling. The outputs of each gate of the gate group 1° are summed by a tree-shaped adder circuit 11, and stored at one point in an exposure map memory 13 via a register 12 as the exposure amount at the center coordinates of the small matrix. The address of the exposure amount map memory 13 is controlled by an address signal 17 from the controller 6 passing through an address switching circuit 14 and becoming a control signal 19. During this calculation, the next column data has been read into the register group 7, so it is possible to immediately move on to the calculation of the next coordinate point. In this way, the exposure amount at each coordinate point is determined at high speed, and an exposure amount map is created.

In addition, in the circuit of FIG. 7, the weight of the small matrix is
Points that are equidistant are equal, and when using an adder circuit 11 that is faster than memory, such as ECL (emitter couple logic), the adder circuit can be 11 can be simplified.

The circuit shown in FIG. 7 has the feature that the small matrix bit bumps can be updated in one memory cycle by configuring the bit bump memory 4 so that the bit data of the next column of the small matrix can be read all at once. have. For example, as shown in FIG. 8, if a 1000Xlooo bit-bang memory is created using 16 8-bit x 8 kiloword RAMs, a maximum of 128 bits of data can be read out at one time.

FIG. 9 is a block diagram showing an embodiment of the output circuit after the map is completed. In FIG. 9, an address for a contour is created by the controller 21 based on one drawing pattern data, and this address 18 is applied to the exposure amount address map memory 13 via the address switching circuit 14, so that the map memory 13 is sequentially accessed. Then, the output 20 from the map memory 13 is checked by a multi-comparator circuit 22, and when it crosses a threshold level, its address is stored in the singular point memory 23.

At this time, the figure vertex coordinates are also stored. Then, according to the contents of the singularity memory 23, the p1 decomposition circuit 24 calculates the first
As shown in FIG. 0, the figure is decomposed, the data is corrected, and corrected data 25 is output. As a result, corrected baton data can be obtained.

According to the embodiment of the present invention described above, when the large matrix is 51212 yuan and the small matrix is 20 yuan, the bitmap for one screen can be created in approximately 512" x memory cycles, and 30 to 50 m (6 ) enables high-speed correction processing.

10\ [Effects of the Invention] As explained above, according to the present invention, there is an effect that drawing data on which proximity effect correction can be performed can be created at high speed.

[Brief explanation of drawings]

Figure 1 is a diagram showing the drawing button convention due to the proximity effect, Figure 2
6 to 6 are diagrams for explaining the present invention in detail, and the second
The figure shows an example of a bit slam display in a certain area, Figure 3 is a diagram to explain the weighting of the influence of a peripheral slam at a certain point on the IJ box, Figure 4 is an exposure map, FIG. 5 is an explanatory diagram of creation of exposure level breakpoints by contour tracing, FIG. 6 is an explanatory diagram of splitting and correction based on breakpoints and exposure amount, and FIG. 7 is an exposure amount map of the electron beam lithography data creation device of the present invention. FIG. 8 is a block diagram showing an example of the configuration of the bit bang memory shown in FIG. 7. FIG. 9 is a block diagram showing an example of the configuration of the data creation device of the present invention, and FIG. A block diagram showing one embodiment, FIG. 10 is a diagram showing an example of graphical decomposition in the decomposition circuit of FIG. 9. (10) 4...Bit bang memory, 5...Address creation circuit, 6, 21...Controller, 7.9...Register group, 8...Small matrix register group, 10...Gate Group, 11...Addition circuit, 12...Register, 1
3... Exposure map memory, 14... Address switching circuit, 22... Multi comparator, 23... Singularity memo! J,' 24...Disassembly circuit. Agent Patent attorney Nagasaki Usuba (and 1 other person) (11) Kaya 3 Koka'Ko Kaya 5 eyes $7 mouth 5 4 Figure 8 Kayaq mouth 3

Claims (1)

[Claims] 1. A bit pattern memory for storing drawing data corresponding to drawing figures in a certain area, means for reading a part of the memory in a matrix form, and a first bit pattern memory for holding the read matrix bit pattern. A weighting operation is performed between the register group, a second register group storing values for weighting each element of the bit pattern, and the first and second register groups. a group of arithmetic circuits; a means for calculating the influence of a peripheral pattern on each point of the bit pattern by adding the outputs of the group of arithmetic circuits; and an uncorrected drawing exposure map for inputting the influence of the peripheral pattern for each address. An electronic device comprising: an exposure map memory for correcting and storing the exposure map memory; and a decomposition circuit for decomposing the circle shape according to the exposure amount of the contour part according to the value of the exposure map memory and outputting the corrected pattern data. Line drawing data creation device.