JPS60194582A - 非晶質シリコン光起電力素子の製造法 - Google Patents

非晶質シリコン光起電力素子の製造法

Info

Publication number
JPS60194582A
JPS60194582A JP59051468A JP5146884A JPS60194582A JP S60194582 A JPS60194582 A JP S60194582A JP 59051468 A JP59051468 A JP 59051468A JP 5146884 A JP5146884 A JP 5146884A JP S60194582 A JPS60194582 A JP S60194582A
Authority
JP
Japan
Prior art keywords
substrate
layer
film
electrode
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59051468A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0519834B2 (enrdf_load_stackoverflow
Inventor
Zenichiro Ito
伊藤　善一郎
Koshiro Mori
森　幸四郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59051468A priority Critical patent/JPS60194582A/ja
Publication of JPS60194582A publication Critical patent/JPS60194582A/ja
Publication of JPH0519834B2 publication Critical patent/JPH0519834B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP59051468A 1984-03-16 1984-03-16 非晶質シリコン光起電力素子の製造法 Granted JPS60194582A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59051468A JPS60194582A (ja) 1984-03-16 1984-03-16 非晶質シリコン光起電力素子の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59051468A JPS60194582A (ja) 1984-03-16 1984-03-16 非晶質シリコン光起電力素子の製造法

Publications (2)

Publication Number Publication Date
JPS60194582A true JPS60194582A (ja) 1985-10-03
JPH0519834B2 JPH0519834B2 (enrdf_load_stackoverflow) 1993-03-17

Family

ID=12887767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59051468A Granted JPS60194582A (ja) 1984-03-16 1984-03-16 非晶質シリコン光起電力素子の製造法

Country Status (1)

Country Link
JP (1) JPS60194582A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60195979A (ja) * 1984-03-17 1985-10-04 Semiconductor Energy Lab Co Ltd 薄膜太陽電池
JPS61168271A (ja) * 1985-01-21 1986-07-29 Sumitomo Bakelite Co Ltd 非晶質シリコン太陽電池

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59189683A (ja) * 1983-04-13 1984-10-27 Sharp Corp 太陽電池の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59189683A (ja) * 1983-04-13 1984-10-27 Sharp Corp 太陽電池の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60195979A (ja) * 1984-03-17 1985-10-04 Semiconductor Energy Lab Co Ltd 薄膜太陽電池
JPS61168271A (ja) * 1985-01-21 1986-07-29 Sumitomo Bakelite Co Ltd 非晶質シリコン太陽電池

Also Published As

Publication number Publication date
JPH0519834B2 (enrdf_load_stackoverflow) 1993-03-17

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