JPS60194042A - Tungsten base alloy for electronic apparatus - Google Patents
Tungsten base alloy for electronic apparatusInfo
- Publication number
- JPS60194042A JPS60194042A JP4848184A JP4848184A JPS60194042A JP S60194042 A JPS60194042 A JP S60194042A JP 4848184 A JP4848184 A JP 4848184A JP 4848184 A JP4848184 A JP 4848184A JP S60194042 A JPS60194042 A JP S60194042A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- strength
- workability
- tungsten
- content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Powder Metallurgy (AREA)
- Conductive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、ハロゲンランプのサポート材等に用いられ
るタングステン基合金に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a tungsten-based alloy used as a support material for a halogen lamp.
タングステンとモリブデンとは互いに類似した高融点金
属であり、これらの合金は、電気抵抗とその温度係数が
組成によって急激に変化する等の性質をそなえ、電子材
料等に従来使用されているものである。上記タングステ
ンとモリブデンとの合金は、モリブデンの比重がタング
ステンのそれに較べてかなり小さいので、同一形状の製
品をタングステンのみでつくるよりも、この合金を用い
てつくる方が材料費が安くてすむという利点があり、一
般に純タングステンよりも加工性が良好で1強度的にも
すぐれているといわれている。Tungsten and molybdenum are high-melting point metals that are similar to each other, and these alloys have properties such as electrical resistance and temperature coefficient that change rapidly depending on the composition, and are conventionally used in electronic materials. . In the above-mentioned alloy of tungsten and molybdenum, the specific gravity of molybdenum is considerably lower than that of tungsten, so the advantage of using this alloy is that the material cost is lower than making products of the same shape only from tungsten. It is generally said to have better workability and strength than pure tungsten.
この発明は、上記タングステンとモリブデンの合金の特
徴を生かし、さらにハロゲンランプ等の構成材料に使用
する場合におけるゲッター効果を付与した合金を提供す
るもので、重量比で0.5〜2%のタンタルと40%未
満のモリブデンを含有。This invention takes advantage of the characteristics of the above-mentioned tungsten and molybdenum alloy, and also provides an alloy that has a getter effect when used as a constituent material of halogen lamps, etc. and less than 40% molybdenum.
し、残部が実質的にタングステンである電子機器用タン
グステン基合金をその要旨としている。However, its gist is a tungsten-based alloy for electronic devices in which the remainder is essentially tungsten.
これら有効成分のうち、タンタル(Ta)がゲッターと
しての働きをなすもので、タンタルの含有量を少なくす
ると、02等のガスを吸着し針状のタングステン結晶の
析出を防ぐという所望のゲッター効果が充分に達成され
ない。一方タンタルは高価であるので、多量に添加する
のは不経済であり、加工性および強度の面でも好ましく
ない、これらの点を検討した結果、タンタルの含有量の
好ましい範囲は0.5〜2%(重量%、以下同じ)であ
り、0.5〜1.5zとするのがより好ましく、1〜1
.5%とするのがさらに好ましいことがわかった。Among these active ingredients, tantalum (Ta) acts as a getter, and when the content of tantalum is reduced, the desired getter effect of adsorbing gases such as 02 and preventing the precipitation of needle-shaped tungsten crystals is achieved. not fully achieved. On the other hand, since tantalum is expensive, it is uneconomical to add it in large amounts, and it is also unfavorable in terms of workability and strength.As a result of considering these points, the preferable range for the content of tantalum is 0.5 to 2. % (weight %, the same applies hereinafter), and it is more preferably 0.5 to 1.5z, and 1 to 1z.
.. It has been found that 5% is more preferable.
つぎに、モリブデンの量について述べれば、りングステ
ン(W)とモリブデン(、No)の合金は全率固溶形の
合金であり、その性質がモリブデンの含有量とともに変
化するので、用途によって所望の組成のものを選べばよ
いが、経済性、加工性、強度等の見地から、例えばハロ
ゲンランプ用の材料としては、40%未満とするのが好
ましく、1%以上40%未満とするのがより好ましい。Next, regarding the amount of molybdenum, the alloy of phosphorous (W) and molybdenum (No.) is a completely solid solution type alloy, and its properties change with the molybdenum content, so the desired amount can be determined depending on the application. You can choose any composition, but from the standpoint of economy, workability, strength, etc., for example, as a material for a halogen lamp, it is preferable to have a content of less than 40%, and more preferably 1% or more and less than 40%. preferable.
なお、これらの成分の他にドープ剤(S、AM、に等)
や不可避的に混入する微量の不純物を含有してもよい。In addition to these ingredients, doping agents (S, AM, etc.)
It may also contain trace amounts of unavoidable impurities.
この合金は、粉末冶金法によって製造することができる
。たとえば、タンタル粉末、タングステン粉末およびモ
リブデン粉末を所望の割合に配合し、充分混合したのち
加圧成形して所定寸法の圧粉体とする。この成形体を水
素雰囲気中等において比較的低温で予焼結したのち、高
温で本焼結を行ない、インゴットを得る。上記加圧成形
、予焼結、本焼結等における取扱いは、モリブデンの量
が多い方が一般に容易である。得られたインゴットは、
圧延、スェージング、伸線等の必要な塑性加工を施して
、所望の製品とする。次に本発明の実施例について説明
する。This alloy can be manufactured by powder metallurgy. For example, tantalum powder, tungsten powder, and molybdenum powder are blended in a desired ratio, thoroughly mixed, and then pressure-molded to form a green compact of a predetermined size. After presintering this compact at a relatively low temperature in a hydrogen atmosphere or the like, main sintering is performed at a high temperature to obtain an ingot. Handling in the above-mentioned pressure forming, presintering, main sintering, etc. is generally easier when the amount of molybdenum is larger. The obtained ingot is
The desired product is made by performing necessary plastic processing such as rolling, swaging, and wire drawing. Next, examples of the present invention will be described.
−320メツシユのタンタル粉末、平均粒度3.5ミク
ロン(gm)のタングステン粉末および平均粒度4.2
ミクロンのモリブデン粉末を使用し、第。-320 mesh tantalum powder, average particle size 3.5 microns (gm) tungsten powder and average particle size 4.2
Using micron molybdenum powder, no.
1表に示す配合比で配合して充分混合した。They were blended at the blending ratio shown in Table 1 and thoroughly mixed.
第 1 表
得られた混合粉末を2 t / c m’の圧力で加圧
成形して15X 15X 400(am)の成形体とし
、電気炉を用いて水素気流中で最高温度1700℃で予
焼結を行なった。つぎに焼結炉として半鐘炉(ベルジャ
式加熱炉)を使用し、水素気流中で予焼結上りの成形体
に直接通電して本焼結を行なった。この場合の最高通電
電流は、溶融電流の約90%とした。この本焼結によっ
て得られたインゴットに段階的なスェージング加工を施
して直径3 、0mmの丸棒とし、しかるのち落し率8
〜10%で線引き加工を施して直径Q、35+amの線
材とした。上記加工の途中で、次の中間アンニールを行
なった。先ず、直径3a+mの段階で1370℃の電気
炉(ホットゾーンの長さ約11i0c+a)中を2 m
7分の速度で通過させ、つぎに直径1.8mmの段階
で再度同様な中間アンニールを行なった。Table 1 The obtained mixed powder was press-molded at a pressure of 2 t/cm' to form a 15 x 15 x 400 (am) compact, and pre-fired at a maximum temperature of 1700°C in a hydrogen stream using an electric furnace. I made a conclusion. Next, a half-bell furnace (bell jar type heating furnace) was used as a sintering furnace, and main sintering was performed by directly applying electricity to the pre-sintered compact in a hydrogen stream. The maximum current in this case was approximately 90% of the melting current. The ingot obtained by this main sintering is subjected to a stepwise swaging process to form a round bar with a diameter of 3.0 mm, and then a drop rate of 8.
A wire rod with a diameter Q of 35+ am was obtained by drawing with a concentration of ~10%. In the middle of the above processing, the following intermediate annealing was performed. First, at the stage of diameter 3a+m, it was heated to 2m in an electric furnace at 1370℃ (hot zone length about 11i0c+a).
It was allowed to pass at a speed of 7 minutes, and then similar intermediate annealing was performed again at the stage of 1.8 mm in diameter.
得られた合金線は、タンタルを含有するのでゲッター効
果をそなえており、これを用いてハロゲンランプのサポ
ート材(タングステンフィラメントを支持するリード線
兼用の支持材)を試作したところ、充分な強度をそなえ
たすぐれた性能のものが得られた。The obtained alloy wire has a getter effect because it contains tantalum, and when we used it to make a prototype support material for a halogen lamp (a support material that also serves as a lead wire to support a tungsten filament), we found that it had sufficient strength. A product with excellent performance was obtained.
特許出願人 東邦金属株式会社 代理人 弁理士 菅 原 弘 志Patent applicant: Toho Metals Co., Ltd. Agent: Patent attorney Hiroshi Sugahara
Claims (1)
モリブデンを含有し、残部が実質的にタングステンであ
る電子機器用タングステン基合金。(1) A tungsten-based alloy for electronic devices containing 0.5 to 2% tantalum and less than 40% molybdenum by weight, with the remainder being substantially tungsten.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4848184A JPS60194042A (en) | 1984-03-13 | 1984-03-13 | Tungsten base alloy for electronic apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4848184A JPS60194042A (en) | 1984-03-13 | 1984-03-13 | Tungsten base alloy for electronic apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60194042A true JPS60194042A (en) | 1985-10-02 |
JPH0371497B2 JPH0371497B2 (en) | 1991-11-13 |
Family
ID=12804574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4848184A Granted JPS60194042A (en) | 1984-03-13 | 1984-03-13 | Tungsten base alloy for electronic apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60194042A (en) |
-
1984
- 1984-03-13 JP JP4848184A patent/JPS60194042A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0371497B2 (en) | 1991-11-13 |
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