JPS60193390A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS60193390A
JPS60193390A JP59048159A JP4815984A JPS60193390A JP S60193390 A JPS60193390 A JP S60193390A JP 59048159 A JP59048159 A JP 59048159A JP 4815984 A JP4815984 A JP 4815984A JP S60193390 A JPS60193390 A JP S60193390A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
electrode
main surface
protection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59048159A
Other languages
Japanese (ja)
Inventor
Fumiko Tajiri
田尻　文子
Masaru Wada
優 和田
Yuichi Shimizu
裕一 清水
Kunio Ito
国雄 伊藤
Takeshi Hamada
健 浜田
Masahiro Kume
雅博 粂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59048159A priority Critical patent/JPS60193390A/en
Publication of JPS60193390A publication Critical patent/JPS60193390A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To have an element and a protective circuit formed in one body to facilitate their sealing in the same container by a method wherein the protective circuit is formed on one side of one main surface of a silicon substrate, and a semiconductor laser element is fixed to the other side of said main surface using a fused metal through the intermediary of an insulating material. CONSTITUTION:A protective circuit 12 is formed in an integrated state on one side of one main surface of the silicon substrate 11 of a semiconductor laser device. Also, an insulating material 13 is buried on the other side of said main surface, and one electrode of a semiconductor laser element 1 is adhered to the insulating material 13 using a fused metal 14. Also, one electrode of the protective circuit 12 is connected to the metal 14, and the other electrode 15 is connected to the electrode of the element 1 using a wire 16. Then, the element 1 and the protective circuit 12 are formed in one body on the substrate 11 adhered to a conductive material 3, and a pole 4 and the electrode 15 of the protective circuit 12 are connected using a wire 5, thereby enabling to easily seal them in the same container.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体レーザ装置に関するものである。[Detailed description of the invention] (Industrial application field) The present invention relates to a semiconductor laser device.

（従来例の構成とその問題点） 半導体レーザ装置は、瞬間的な過剰電流すなわちサージ
電流によって破壊され易い。そのため、サージ電流によ
る破壊を防止するための保護回路を必要とする。(Structure of conventional example and its problems) Semiconductor laser devices are easily destroyed by instantaneous excessive current, that is, surge current. Therefore, a protection circuit is required to prevent damage caused by surge current.

第１図は、従来の半導体レーザ装置を示したものであり
、第２図は、その半導体レーザ装置と保護回路とを接続
した回路図である。第１図で、半導体レーザ素子ｌが、
シリコンからなり放熱器の役目をする幅３ｍ、厚さ２０
０〜５００μｍのサブマウント用基板２の上に接着され
ている。さらにこのサブマウント用基板２は導電体の台
３に接着されており、半導体レーザ素子１と台３とはシ
リコン基板２を介して電気的につながっている。また、
半導体レーザ索子工の表面に形成された電極は、ボール
４とワイヤ５で接続されている。そして、導電体の台３
とボール４にはそれぞれリード線６゜７が接続されてい
る。第２図で、８は、半導体レーザ装置、９は抵抗器、
１０はツェナーダイオードである。半導体レーザ装置の
リード線６に抵抗器９の一方の端子が接続され、抵抗器
９の他°方の端子と半導体レーザ装置８の他方のリード
線７との間に、ツェナーダイオード１０が、半導体レー
ザ装！８に対し、図のような向きに接続されている。FIG. 1 shows a conventional semiconductor laser device, and FIG. 2 is a circuit diagram connecting the semiconductor laser device and a protection circuit. In FIG. 1, the semiconductor laser element l is
Made of silicon and serves as a heat sink, 3m wide and 20mm thick.
It is adhered onto a submount substrate 2 having a thickness of 0 to 500 μm. Further, this submount substrate 2 is bonded to a conductive base 3, and the semiconductor laser element 1 and the base 3 are electrically connected via the silicon substrate 2. Also,
An electrode formed on the surface of the semiconductor laser wire is connected to a ball 4 by a wire 5. And conductor stand 3
Lead wires 6.7 are connected to the ball 4 and the ball 4, respectively. In FIG. 2, 8 is a semiconductor laser device, 9 is a resistor,
10 is a Zener diode. One terminal of a resistor 9 is connected to the lead wire 6 of the semiconductor laser device, and a Zener diode 10 is connected between the other terminal of the resistor 9 and the other lead wire 7 of the semiconductor laser device 8. Laser equipment! 8, it is connected in the direction shown in the figure.

このように、従来は１例えば抵抗器９とツェナーダイオ
ード１０からなる保護回路を半導体レーザ装置ｆ８のリ
ード線６，７に外付けして、サージ電流による破壊を防
止するようにしているので、半導体レーザ装置の使用に
当り、実用上非常に不便であった。In this way, conventionally, a protection circuit consisting of, for example, a resistor 9 and a Zener diode 10 is externally attached to the lead wires 6 and 7 of the semiconductor laser device f8 to prevent damage caused by surge current. This is extremely inconvenient in practical use when using a laser device.

（発明の目的） 本発明は、上記欠点に鑑み、外部に保′護回路を接続し
ないで使用することができる半導体レーザ装置を提供す
るものである。(Object of the Invention) In view of the above drawbacks, the present invention provides a semiconductor laser device that can be used without connecting an external protection circuit.

（発明の構成） この目的を達成するために、本発明の半導体レーザ装置
は、シリコン基板の一生面の一方の側に保護回路が形成
され、同主面の他方の側に絶縁体層を介して半導体レー
ザ素子が融着金・属を用いて固着される。この構成によ
って、半導体レーザ素子と保護回路とが一体化され、同
一容器内に封入されるため、外部に保護回路を設ける必
要がない。(Structure of the Invention) In order to achieve this object, the semiconductor laser device of the present invention includes a protection circuit formed on one side of a main surface of a silicon substrate, and a protection circuit formed on the other side of the main surface with an insulating layer interposed therebetween. Then, the semiconductor laser element is fixed using fusion bonding metal. With this configuration, the semiconductor laser element and the protection circuit are integrated and sealed in the same container, so there is no need to provide an external protection circuit.

（実施例の説明） 以下、本発明の一実施例について、図面を参照しながら
説明する。第３図１よ、本発明の一実施例における半導
体レーザ装置の要部平面図、第４図は、同側面図であり
、第１図と同一符号のものは同一のものを示している。(Description of Embodiment) Hereinafter, an embodiment of the present invention will be described with reference to the drawings. 3 is a plan view of a main part of a semiconductor laser device according to an embodiment of the present invention, and FIG. 4 is a side view of the same, and the same reference numerals as in FIG. 1 indicate the same parts.

１１はシリコン基板であり、その−主面の一方の側に保
護回路部１２が集積回路として形成されている。また、
同主面の他方の側に絶縁体１３を埋め込み、その上に融
着金属１４を用いて半導体レーザ素子１の一方の電極面
が接着されている。保護回路１２の一方の電極は融着金
属１４と接続され、他方の電極１５はワイヤ１６により
半導体レーザ素子１の他方の電極に接続されている。保
護回路１２が形成されているシリコン基板１１は、半導
体レーザ素子１のサブマウント用基板としての役割も兼
ねている。このシリコン基板１１は第５図のように、導
電体の台３に接着され、ボール４と保護回路１２の電極
１５とがワイヤ５で接続される。Reference numeral 11 denotes a silicon substrate, and a protection circuit section 12 is formed as an integrated circuit on one side of its -main surface. Also,
An insulator 13 is embedded in the other side of the main surface, and one electrode surface of the semiconductor laser element 1 is bonded thereon using a fusion metal 14. One electrode of the protection circuit 12 is connected to the fusion metal 14 , and the other electrode 15 is connected to the other electrode of the semiconductor laser element 1 by a wire 16 . The silicon substrate 11 on which the protection circuit 12 is formed also serves as a submount substrate for the semiconductor laser element 1. As shown in FIG. 5, this silicon substrate 11 is adhered to a conductor base 3, and the balls 4 and the electrodes 15 of the protection circuit 12 are connected by wires 5.

以上のように構成された本実施例では、半導体レーザ素
子１ど保護回路部１２とがシリコン基板ｌｌ上で一体化
されているため使用に際して、外部に保護回路を設ける
必要がない。In this embodiment configured as described above, since the semiconductor laser element 1 and the protection circuit section 12 are integrated on the silicon substrate 11, there is no need to provide an external protection circuit during use.

（発明の効果） 以上のように、本発明は、シリコン基板の一生面の一方
の側に半導体レーザ素子が接着されるとともに、この半
導体レーザ素子の保護回路が、シリコン基板の同主面の
他方の側に形成されてＮるので、半導体レーザ素子と保
１回路が一体化され、従って、使用に際して、外部に保
護回路を必要とせず、その実用的効果は大なるものであ
る。(Effects of the Invention) As described above, in the present invention, a semiconductor laser element is bonded to one side of the main surface of a silicon substrate, and a protection circuit for this semiconductor laser element is bonded to the other side of the same main surface of the silicon substrate. Since the semiconductor laser element and the protection circuit are integrated, no external protection circuit is required during use, and the practical effect is great.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、従来の半導体レーザ装置の斜視図、第２図は
、同半導体レーザ装置と保護回路とを接続した回路図、
第３図は、本発明の一実施例における半導体レーザ装置
の要部平面図、第４図は。 同側面図、第５図は、同実施例の半導体レーザ装置の正
面図である。 １　・・・半導体レーザ素子、　３　・・・導電体の台
、ｉｔ・・・シリコン基板、１２・・・保護回路部、１
３・・・絶縁体、１４・・・融着金属。 特許出願人　松下電器産業株式会社 第１図 第２図 第３図 第４図 ■ 第５図FIG. 1 is a perspective view of a conventional semiconductor laser device, and FIG. 2 is a circuit diagram connecting the semiconductor laser device and a protection circuit.
FIG. 3 is a plan view of a main part of a semiconductor laser device according to an embodiment of the present invention, and FIG. 4 is a plan view of a main part. The same side view and FIG. 5 are front views of the semiconductor laser device of the same embodiment. DESCRIPTION OF SYMBOLS 1... Semiconductor laser element, 3... Conductor stand, IT... Silicon substrate, 12... Protection circuit section, 1
3... Insulator, 14... Fusion metal. Patent applicant Matsushita Electric Industrial Co., Ltd. Figure 1 Figure 2 Figure 3 Figure 4 ■ Figure 5

Claims (1)

【特許請求の範囲】[Claims] シリコン基板の一生面の一方の側に絶縁体層を介して半
導体レーザ素子が装着され、前記シリコン基板の同主面
の他方の側に保護回路が形成され、前記半導体レーザ素
子と保護回路とが電気的に接続されてなることを特徴と
する半導体レーザ装置。A semiconductor laser element is mounted on one side of a main surface of a silicon substrate via an insulator layer, a protection circuit is formed on the other side of the same main surface of the silicon substrate, and the semiconductor laser element and the protection circuit are connected to each other. A semiconductor laser device characterized in that it is electrically connected.
JP59048159A 1984-03-15 1984-03-15 Semiconductor laser device Pending JPS60193390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59048159A JPS60193390A (en) 1984-03-15 1984-03-15 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59048159A JPS60193390A (en) 1984-03-15 1984-03-15 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS60193390A true JPS60193390A (en) 1985-10-01

Family

ID=12795597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59048159A Pending JPS60193390A (en) 1984-03-15 1984-03-15 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS60193390A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0588406A1 (en) * 1992-09-07 1994-03-23 Koninklijke Philips Electronics N.V. Method of manufacturing a block-shaped support body for a semiconductor component

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147664B2 (en) * 1974-12-27 1976-12-16
JPS57172308A (en) * 1981-04-16 1982-10-23 Omron Tateisi Electronics Co Coupling method of semiconductor laser and optical waveguide

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147664B2 (en) * 1974-12-27 1976-12-16
JPS57172308A (en) * 1981-04-16 1982-10-23 Omron Tateisi Electronics Co Coupling method of semiconductor laser and optical waveguide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0588406A1 (en) * 1992-09-07 1994-03-23 Koninklijke Philips Electronics N.V. Method of manufacturing a block-shaped support body for a semiconductor component

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