JPS60190559A - 真空付着装置 - Google Patents

真空付着装置

Info

Publication number
JPS60190559A
JPS60190559A JP59243543A JP24354384A JPS60190559A JP S60190559 A JPS60190559 A JP S60190559A JP 59243543 A JP59243543 A JP 59243543A JP 24354384 A JP24354384 A JP 24354384A JP S60190559 A JPS60190559 A JP S60190559A
Authority
JP
Japan
Prior art keywords
sample
atoms
target
substrate
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59243543A
Other languages
English (en)
Japanese (ja)
Other versions
JPH036988B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
キム．ジヨセフ．ブラツクウエル
ラツセル．トーマス．ホワイト、ジユニア
ジエームズ．ウオーレン．ウイルソン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS60190559A publication Critical patent/JPS60190559A/ja
Publication of JPH036988B2 publication Critical patent/JPH036988B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4076—Through-connections; Vertical interconnect access [VIA] connections by thin-film techniques

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP59243543A 1984-03-07 1984-11-20 真空付着装置 Granted JPS60190559A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US587098 1984-03-07
US06/587,098 US4508612A (en) 1984-03-07 1984-03-07 Shield for improved magnetron sputter deposition into surface recesses

Publications (2)

Publication Number Publication Date
JPS60190559A true JPS60190559A (ja) 1985-09-28
JPH036988B2 JPH036988B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-01-31

Family

ID=24348336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59243543A Granted JPS60190559A (ja) 1984-03-07 1984-11-20 真空付着装置

Country Status (4)

Country Link
US (1) US4508612A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0154859B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS60190559A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3575952D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5371978A (en) * 1990-08-04 1994-12-13 Toyo Co., Ltd. Honing tool and super precision finishing method using the same
JP2009142987A (ja) * 2009-03-30 2009-07-02 Kobe Steel Ltd クランク軸の疲労強度改善加工方法とその加工装置

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900001825B1 (ko) * 1984-11-14 1990-03-24 가부시끼가이샤 히다찌세이사꾸쇼 성막 지향성을 고려한 스퍼터링장치
US5021138A (en) * 1985-01-17 1991-06-04 Babu Suryadevara V Side source center sink plasma reactor
US6248219B1 (en) * 1986-06-23 2001-06-19 Unaxis Balzers Aktiengesellschaft Process and apparatus for sputter etching or sputter coating
US4911810A (en) * 1988-06-21 1990-03-27 Brown University Modular sputtering apparatus
DE69028445T2 (de) * 1989-06-02 1997-02-20 Toshiba Kawasaki Kk Vorrichtung und Verfahren zur Erzeugung von Dünnschichten
US6521106B1 (en) * 1990-01-29 2003-02-18 Novellus Systems, Inc. Collimated deposition apparatus
US5284561A (en) * 1991-11-13 1994-02-08 Materials Research Corporation Method and apparatus for sputter coating employing machine readable indicia carried by target assembly
US5254236A (en) * 1991-01-25 1993-10-19 Shibaura Engineering Works Co., Ltd. Sputtering apparatus
US5223108A (en) * 1991-12-30 1993-06-29 Materials Research Corporation Extended lifetime collimator
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
EP0682125A1 (en) * 1994-05-11 1995-11-15 Applied Materials, Inc. Controlling material sputtered from a target
US5527438A (en) * 1994-12-16 1996-06-18 Applied Materials, Inc. Cylindrical sputtering shield
US6030511A (en) * 1995-02-03 2000-02-29 Nec Corporation Collimated sputtering method and system used therefor
US5885425A (en) * 1995-06-06 1999-03-23 International Business Machines Corporation Method for selective material deposition on one side of raised or recessed features
WO1997035044A1 (en) * 1996-03-22 1997-09-25 Materials Research Corporation Method and apparatus for rf diode sputtering
JP2001509214A (ja) 1997-01-16 2001-07-10 ボトムフィールド，ロジャー，エル． 蒸気蒸着構成要素及び対応する方法
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
DE19734633C2 (de) * 1997-08-11 1999-08-26 Forschungszentrum Juelich Gmbh Hochdruck-Magnetron-Kathode
US7382142B2 (en) 2000-05-23 2008-06-03 Nanonexus, Inc. High density interconnect system having rapid fabrication cycle
US7349223B2 (en) 2000-05-23 2008-03-25 Nanonexus, Inc. Enhanced compliant probe card systems having improved planarity
US6812718B1 (en) * 1999-05-27 2004-11-02 Nanonexus, Inc. Massively parallel interface for electronic circuits
US20070245553A1 (en) * 1999-05-27 2007-10-25 Chong Fu C Fine pitch microfabricated spring contact structure & method
US7247035B2 (en) * 2000-06-20 2007-07-24 Nanonexus, Inc. Enhanced stress metal spring contactor
US7579848B2 (en) * 2000-05-23 2009-08-25 Nanonexus, Inc. High density interconnect system for IC packages and interconnect assemblies
US7952373B2 (en) 2000-05-23 2011-05-31 Verigy (Singapore) Pte. Ltd. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies
US20020142612A1 (en) * 2001-03-30 2002-10-03 Han-Ming Wu Shielding plate in plasma for uniformity improvement
EP1419285A4 (en) * 2001-08-24 2009-08-19 Nanonexus Inc METHOD AND DEVICE FOR GENERATING UNIFORM ISOTROPIC VOLTAGES IN A SPOTTED FILM
US20090194414A1 (en) * 2008-01-31 2009-08-06 Nolander Ira G Modified sputtering target and deposition components, methods of production and uses thereof
DE102009004158B4 (de) * 2009-01-09 2023-03-30 Bayerische Motoren Werke Aktiengesellschaft Verfahren und Vorrichtung zur Funktionsflächenbeschichtung
US9127356B2 (en) * 2011-08-18 2015-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Sputtering target with reverse erosion profile surface and sputtering system and method using the same
US11448502B2 (en) * 2017-12-02 2022-09-20 Emilio Banchs Positive-lock clamp / adapter
RU2697814C1 (ru) * 2018-07-13 2019-08-20 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Способ изготовления микроплат с переходными металлизированными отверстиями

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3361659A (en) * 1967-08-14 1968-01-02 Ibm Process of depositing thin films by cathode sputtering using a controlled grid
US3856654A (en) * 1971-08-26 1974-12-24 Western Electric Co Apparatus for feeding and coating masses of workpieces in a controlled atmosphere
US3846294A (en) * 1974-01-11 1974-11-05 Rca Corp Method of coating the interior walls of through-holes
US3904503A (en) * 1974-05-31 1975-09-09 Western Electric Co Depositing material on a substrate using a shield
DE2612098A1 (de) * 1976-03-22 1977-09-29 Siemens Ag Verfahren zum gleichmaessigen metallisieren eines substrats
JPS601952B2 (ja) * 1980-01-25 1985-01-18 三菱電機株式会社 プラズマエツチング装置
US4301192A (en) * 1980-06-02 1981-11-17 Western Electric Co., Inc. Method for coating thru holes in a printed circuit substrate
US4434038A (en) * 1980-09-15 1984-02-28 Vac-Tec Systems, Inc. Sputtering method and apparatus utilizing improved ion source
US4416755A (en) * 1981-04-03 1983-11-22 Xerox Corporation Apparatus and method for producing semiconducting films
US4390571A (en) * 1981-06-30 1983-06-28 International Business Machines Corporation Boatless point source evaporation method
US4416759A (en) * 1981-11-27 1983-11-22 Varian Associates, Inc. Sputter system incorporating an improved blocking shield for contouring the thickness of sputter coated layers
NL8202092A (nl) * 1982-05-21 1983-12-16 Philips Nv Magnetronkathodesputtersysteem.
DE3231735C2 (de) * 1982-08-26 1986-05-28 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Verfahren zum Haltern und Metallisieren eines Substrats und ihre Verwendung
EP0106497B1 (en) * 1982-09-10 1988-06-01 Nippon Telegraph And Telephone Corporation Ion shower apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5371978A (en) * 1990-08-04 1994-12-13 Toyo Co., Ltd. Honing tool and super precision finishing method using the same
JP2009142987A (ja) * 2009-03-30 2009-07-02 Kobe Steel Ltd クランク軸の疲労強度改善加工方法とその加工装置

Also Published As

Publication number Publication date
JPH036988B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-01-31
EP0154859A1 (en) 1985-09-18
US4508612A (en) 1985-04-02
EP0154859B1 (en) 1990-02-07
DE3575952D1 (de) 1990-03-15

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