DE3575952D1 - Vorrichtung fuer vakuumbeschichtung. - Google Patents
Vorrichtung fuer vakuumbeschichtung.Info
- Publication number
- DE3575952D1 DE3575952D1 DE8585101920T DE3575952T DE3575952D1 DE 3575952 D1 DE3575952 D1 DE 3575952D1 DE 8585101920 T DE8585101920 T DE 8585101920T DE 3575952 T DE3575952 T DE 3575952T DE 3575952 D1 DE3575952 D1 DE 3575952D1
- Authority
- DE
- Germany
- Prior art keywords
- vacuum coating
- vacuum
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4076—Through-connections; Vertical interconnect access [VIA] connections by thin-film techniques
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/587,098 US4508612A (en) | 1984-03-07 | 1984-03-07 | Shield for improved magnetron sputter deposition into surface recesses |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3575952D1 true DE3575952D1 (de) | 1990-03-15 |
Family
ID=24348336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585101920T Expired - Lifetime DE3575952D1 (de) | 1984-03-07 | 1985-02-22 | Vorrichtung fuer vakuumbeschichtung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4508612A (de) |
EP (1) | EP0154859B1 (de) |
JP (1) | JPS60190559A (de) |
DE (1) | DE3575952D1 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR900001825B1 (ko) * | 1984-11-14 | 1990-03-24 | 가부시끼가이샤 히다찌세이사꾸쇼 | 성막 지향성을 고려한 스퍼터링장치 |
US5021138A (en) * | 1985-01-17 | 1991-06-04 | Babu Suryadevara V | Side source center sink plasma reactor |
US6248219B1 (en) * | 1986-06-23 | 2001-06-19 | Unaxis Balzers Aktiengesellschaft | Process and apparatus for sputter etching or sputter coating |
US4911810A (en) * | 1988-06-21 | 1990-03-27 | Brown University | Modular sputtering apparatus |
DE69028445T2 (de) * | 1989-06-02 | 1997-02-20 | Toshiba Kawasaki Kk | Vorrichtung und Verfahren zur Erzeugung von Dünnschichten |
US6521106B1 (en) * | 1990-01-29 | 2003-02-18 | Novellus Systems, Inc. | Collimated deposition apparatus |
US5371978A (en) * | 1990-08-04 | 1994-12-13 | Toyo Co., Ltd. | Honing tool and super precision finishing method using the same |
US5284561A (en) * | 1991-11-13 | 1994-02-08 | Materials Research Corporation | Method and apparatus for sputter coating employing machine readable indicia carried by target assembly |
US5254236A (en) * | 1991-01-25 | 1993-10-19 | Shibaura Engineering Works Co., Ltd. | Sputtering apparatus |
US5223108A (en) * | 1991-12-30 | 1993-06-29 | Materials Research Corporation | Extended lifetime collimator |
US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
EP0682125A1 (de) * | 1994-05-11 | 1995-11-15 | Applied Materials, Inc. | Kontrolle eines Materials, welches von einem Target zerstäubt wird |
US5527438A (en) * | 1994-12-16 | 1996-06-18 | Applied Materials, Inc. | Cylindrical sputtering shield |
US6030511A (en) * | 1995-02-03 | 2000-02-29 | Nec Corporation | Collimated sputtering method and system used therefor |
US5885425A (en) * | 1995-06-06 | 1999-03-23 | International Business Machines Corporation | Method for selective material deposition on one side of raised or recessed features |
AU1978497A (en) * | 1996-03-22 | 1997-10-10 | Materials Research Corporation | Method and apparatus for rf diode sputtering |
WO1998031845A1 (en) | 1997-01-16 | 1998-07-23 | Bottomfield, Layne, F. | Vapor deposition components and corresponding methods |
US5985115A (en) * | 1997-04-11 | 1999-11-16 | Novellus Systems, Inc. | Internally cooled target assembly for magnetron sputtering |
DE19734633C2 (de) * | 1997-08-11 | 1999-08-26 | Forschungszentrum Juelich Gmbh | Hochdruck-Magnetron-Kathode |
US20070245553A1 (en) * | 1999-05-27 | 2007-10-25 | Chong Fu C | Fine pitch microfabricated spring contact structure & method |
US7247035B2 (en) * | 2000-06-20 | 2007-07-24 | Nanonexus, Inc. | Enhanced stress metal spring contactor |
US7349223B2 (en) | 2000-05-23 | 2008-03-25 | Nanonexus, Inc. | Enhanced compliant probe card systems having improved planarity |
US6812718B1 (en) * | 1999-05-27 | 2004-11-02 | Nanonexus, Inc. | Massively parallel interface for electronic circuits |
US7382142B2 (en) | 2000-05-23 | 2008-06-03 | Nanonexus, Inc. | High density interconnect system having rapid fabrication cycle |
US7579848B2 (en) * | 2000-05-23 | 2009-08-25 | Nanonexus, Inc. | High density interconnect system for IC packages and interconnect assemblies |
US7952373B2 (en) | 2000-05-23 | 2011-05-31 | Verigy (Singapore) Pte. Ltd. | Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies |
US20020142612A1 (en) * | 2001-03-30 | 2002-10-03 | Han-Ming Wu | Shielding plate in plasma for uniformity improvement |
US7153399B2 (en) * | 2001-08-24 | 2006-12-26 | Nanonexus, Inc. | Method and apparatus for producing uniform isotropic stresses in a sputtered film |
US20090194414A1 (en) * | 2008-01-31 | 2009-08-06 | Nolander Ira G | Modified sputtering target and deposition components, methods of production and uses thereof |
DE102009004158B4 (de) * | 2009-01-09 | 2023-03-30 | Bayerische Motoren Werke Aktiengesellschaft | Verfahren und Vorrichtung zur Funktionsflächenbeschichtung |
JP4825282B2 (ja) * | 2009-03-30 | 2011-11-30 | 株式会社神戸製鋼所 | クランク軸の疲労強度改善加工方法とその加工装置 |
US9127356B2 (en) * | 2011-08-18 | 2015-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Sputtering target with reverse erosion profile surface and sputtering system and method using the same |
US11448502B2 (en) * | 2017-12-02 | 2022-09-20 | Emilio Banchs | Positive-lock clamp / adapter |
RU2697814C1 (ru) * | 2018-07-13 | 2019-08-20 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") | Способ изготовления микроплат с переходными металлизированными отверстиями |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3361659A (en) * | 1967-08-14 | 1968-01-02 | Ibm | Process of depositing thin films by cathode sputtering using a controlled grid |
US3856654A (en) * | 1971-08-26 | 1974-12-24 | Western Electric Co | Apparatus for feeding and coating masses of workpieces in a controlled atmosphere |
US3846294A (en) * | 1974-01-11 | 1974-11-05 | Rca Corp | Method of coating the interior walls of through-holes |
US3904503A (en) * | 1974-05-31 | 1975-09-09 | Western Electric Co | Depositing material on a substrate using a shield |
DE2612098A1 (de) * | 1976-03-22 | 1977-09-29 | Siemens Ag | Verfahren zum gleichmaessigen metallisieren eines substrats |
JPS601952B2 (ja) * | 1980-01-25 | 1985-01-18 | 三菱電機株式会社 | プラズマエツチング装置 |
US4301192A (en) * | 1980-06-02 | 1981-11-17 | Western Electric Co., Inc. | Method for coating thru holes in a printed circuit substrate |
US4434038A (en) * | 1980-09-15 | 1984-02-28 | Vac-Tec Systems, Inc. | Sputtering method and apparatus utilizing improved ion source |
US4416755A (en) * | 1981-04-03 | 1983-11-22 | Xerox Corporation | Apparatus and method for producing semiconducting films |
US4390571A (en) * | 1981-06-30 | 1983-06-28 | International Business Machines Corporation | Boatless point source evaporation method |
US4416759A (en) * | 1981-11-27 | 1983-11-22 | Varian Associates, Inc. | Sputter system incorporating an improved blocking shield for contouring the thickness of sputter coated layers |
NL8202092A (nl) * | 1982-05-21 | 1983-12-16 | Philips Nv | Magnetronkathodesputtersysteem. |
DE3231735C2 (de) * | 1982-08-26 | 1986-05-28 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Verfahren zum Haltern und Metallisieren eines Substrats und ihre Verwendung |
EP0106497B1 (de) * | 1982-09-10 | 1988-06-01 | Nippon Telegraph And Telephone Corporation | Ionenflutgerät |
-
1984
- 1984-03-07 US US06/587,098 patent/US4508612A/en not_active Expired - Lifetime
- 1984-11-20 JP JP59243543A patent/JPS60190559A/ja active Granted
-
1985
- 1985-02-22 EP EP85101920A patent/EP0154859B1/de not_active Expired - Lifetime
- 1985-02-22 DE DE8585101920T patent/DE3575952D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0154859B1 (de) | 1990-02-07 |
EP0154859A1 (de) | 1985-09-18 |
US4508612A (en) | 1985-04-02 |
JPH036988B2 (de) | 1991-01-31 |
JPS60190559A (ja) | 1985-09-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8330 | Complete disclaimer |