JPS60190418A - Liquid epoxy resin composition for sealing semiconductors - Google Patents
Liquid epoxy resin composition for sealing semiconductorsInfo
- Publication number
- JPS60190418A JPS60190418A JP4841584A JP4841584A JPS60190418A JP S60190418 A JPS60190418 A JP S60190418A JP 4841584 A JP4841584 A JP 4841584A JP 4841584 A JP4841584 A JP 4841584A JP S60190418 A JPS60190418 A JP S60190418A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- acid anhydride
- resin
- anhydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Organic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は耐湿信頼性に優れ、さらに低圧注入性に優れ
た半導体封止用液状エポキシ樹脂組成物に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a liquid epoxy resin composition for semiconductor encapsulation that has excellent moisture resistance and reliability and also has excellent low pressure injectability.
〔従来技術]
現在、1C1L8工などの半導体素子をシリコーン樹脂
あるいはエポキシ樹脂などを用いて刺止する、大量生産
性に優れた樹脂封止法が広く採用され、これらの中でも
エポキシ樹脂は比較的優れた気密性を与え、かつ安価で
あることから半導体封止用樹脂として汎用されている。[Prior art] Currently, resin encapsulation methods with excellent mass productivity, in which semiconductor elements such as 1C1L8 are embossed using silicone resin or epoxy resin, are widely used. Among these, epoxy resin is relatively superior. It is widely used as a resin for semiconductor encapsulation because it provides airtightness and is inexpensive.
従来の半導体封止用エポキシ樹脂組成物はエポキシ樹脂
に硬化剤、硬化促進剤および無機充填剤などを配合し、
ロール混合などにより均一混合したものをいったん粉末
にし、タブレット状に成形したものを半導体封止用りし
ていた。また、半導体素子の封止にあたっては予備加熱
したこのタブレットを成形機のシリンダーに入れ、さら
に高温で加熱融解させ、その後あらかじめプレス機械型
締め加熱された成形金型内に50 K9/cd以上の圧
力で注入し、加熱硬化させていた。Conventional epoxy resin compositions for semiconductor encapsulation contain epoxy resins, curing agents, curing accelerators, inorganic fillers, etc.
The mixture was uniformly mixed using roll mixing, etc., and then turned into powder, which was then molded into tablets and used for semiconductor encapsulation. In order to seal the semiconductor element, the preheated tablet is placed in the cylinder of a molding machine, heated and melted at a high temperature, and then placed in a heated mold with a pressure of 50K9/cd or higher. It was injected with heat and hardened.
このような従来の半導体封止用樹脂組成物を用いた、半
導体素子の封止にあたっては種々の問題点があった、即
ち、高圧成形のために樹脂利用効率が悪いうえ、高価な
型締めプレスおよび耐高圧用金型の使用が要求され、そ
の上半導体素子の配線、ボンディング線の変形、ズレ、
断線などをしばしばひき起こし、製品特性および歩留り
の低下をまねいていた。There have been various problems in encapsulating semiconductor elements using such conventional semiconductor encapsulating resin compositions. Namely, resin usage efficiency is low due to high pressure molding, and expensive mold clamping presses are required. In addition, the use of high-voltage resistant molds is required, and in addition, semiconductor device wiring and bonding lines may be deformed or misaligned.
This often caused wire breakage, resulting in a decline in product characteristics and yield.
かかる実情から、従来より液状の各種半導体封止用樹脂
の開発が鋭意進められてきたが、高信頼性を必要とする
用途の実用化には到っていない。Under these circumstances, efforts have been made to develop various liquid semiconductor encapsulation resins, but they have not yet been put to practical use in applications that require high reliability.
その最大の理由としては、かかる4σ1脂の内、特に液
状の半導体封止用樹脂を使用すれば前述の欠点はほぼ1
余去されるが、耐湿性の点で十分でない場合があるため
である。The biggest reason for this is that among these 4σ1 resins, if liquid semiconductor encapsulation resins are used, the above-mentioned drawbacks can be reduced to almost 1.
This is because the moisture resistance may not be sufficient in some cases.
即ち、液状の半導体封止用樹脂としてアミン系硬化剤の
液状エポキシ樹脂組成物を用いた場合、アミン系硬化剤
が元来反応性が強く、配合後短時間で常圧注入性が低下
するばかりでなく、半導体素子のアルミ配線の腐食を促
進し、短時間での耐湿性の低下につながる。That is, when a liquid epoxy resin composition containing an amine-based curing agent is used as a liquid semiconductor encapsulation resin, the amine-based curing agent is inherently highly reactive, and the normal pressure injectability deteriorates in a short period of time after compounding. Instead, it promotes corrosion of the aluminum wiring of semiconductor devices, leading to a short-term decrease in moisture resistance.
またフェノール樹脂系硬化AIJの液状エポキシ樹脂組
成物を用いた場合においても、フェノール性水酸基とエ
ポキシ基の反応により、親水性の強いアルコール性水酸
基を生成すると七もに、フェノール性水酸基の水素結合
のため半固形化しやすく低圧注入性に劣り、その改善の
ために通常低分子フェノール化合物、希釈剤などの変性
剤が配合されるが、一般的には加熱硬化後の硬化物の熱
変形温度などの各種特性の低下をまねき、これ−また短
時間で耐湿性が低下する。Furthermore, even when a phenolic resin-based cured AIJ liquid epoxy resin composition is used, the reaction between the phenolic hydroxyl group and the epoxy group produces a strongly hydrophilic alcoholic hydroxyl group, which leads to the formation of hydrogen bonds between the phenolic hydroxyl groups. Therefore, it tends to become semi-solid and has poor low-pressure injectability.To improve this, modifiers such as low-molecular phenol compounds and diluents are usually added. This leads to a decrease in various properties, and also a decrease in moisture resistance in a short period of time.
一方、酸無水物硬化剤の液状エポキシ樹脂組成物を用い
た場合においては、低粘度の酸無水物が多量に配合可能
なため、かかる樹脂組成物の粘度はきわめて低く、低圧
注入が可能である。このため、低粘度化のための希釈剤
などの変成剤の配合を必要とせず、熱変形温度などの各
種特性の低下をもたらさない。ところが酸無水物を硬化
剤として硬化したエポキシ樹脂のエステル結合は高温高
配の条件で徐々に加水分解を起こし、比較的長時間での
耐湿特性に劣るという問題があった。On the other hand, when a liquid epoxy resin composition containing an acid anhydride curing agent is used, a large amount of a low-viscosity acid anhydride can be blended, so the viscosity of such a resin composition is extremely low, and low-pressure injection is possible. . Therefore, it is not necessary to mix a modifying agent such as a diluent to lower the viscosity, and various properties such as heat distortion temperature do not deteriorate. However, the ester bonds of epoxy resins cured using acid anhydrides as curing agents gradually undergo hydrolysis under high temperature conditions, resulting in poor moisture resistance over a relatively long period of time.
したがって、今後ますます高耐混化および微細化を要求
されるLSI、VI、S工への適用が可能で、耐湿性、
耐加水分解性に優れ、さらには低圧注入性、硬化性にも
優れた半導体封止用液状エポキシ樹脂組成物の開発が強
く望まれているのが現状である。Therefore, it can be applied to LSI, VI, and S engineering, which will require increasingly high mixing resistance and miniaturization in the future, and has excellent moisture resistance and
At present, there is a strong desire to develop a liquid epoxy resin composition for semiconductor encapsulation that has excellent hydrolysis resistance, low-pressure injection properties, and curability.
〔発明の概要]
この発明は、上記従来のものの欠点を除去するためにな
されたもので、エポキシ樹脂、この硬化剤としての酸無
水物およびフェノール樹脂の混合物、無機充填剤、カッ
プリング剤並びに硬化促進剤を含有するものを用いるこ
とにより、低圧注入性、硬化性および耐湿信頼性に優れ
た半導体封止用液状エポキシ樹脂組成物を提供すること
を目的とする。[Summary of the Invention] This invention was made to eliminate the drawbacks of the above-mentioned conventional products. The object of the present invention is to provide a liquid epoxy resin composition for semiconductor encapsulation that has excellent low-pressure injection properties, curability, and moisture resistance reliability by using a composition containing an accelerator.
[発明の実施例]
この発明に係わるエポキシ樹脂としては例えばビスフェ
ノールA系エポキシ樹脂、フェノールノボラツタ系エポ
キシ樹脂、クレゾールノボラック系エポキシ樹脂、およ
び脂環式エポキシ樹脂など分子中にエポキシ基を2ヶ以
上有するものがあり、これらの内の少なくとも一種が用
いられる。なお、これらのエポキシ樹脂とともに、必要
に応じて臭素化ノボラック系エポキシ樹脂および臭素化
ビスフェノールA系エポキシ樹脂などの固形エポキシ樹
脂の併用も可能である。[Embodiments of the Invention] Examples of epoxy resins according to the present invention include bisphenol A-based epoxy resins, phenol novolac epoxy resins, cresol novolac-based epoxy resins, and alicyclic epoxy resins having two or more epoxy groups in the molecule. At least one of these is used. In addition, in addition to these epoxy resins, solid epoxy resins such as brominated novolac epoxy resins and brominated bisphenol A epoxy resins can also be used in combination, if necessary.
この発明に係わる硬化剤の酸無水物としては、例えば無
水フタル酸、無水テトラノ・イドロフタル酸、無水ヘキ
サハイドロフタル酸、無水メチルテトラハイドロフタル
酸、無水メチルベキサノ・イドロフタル酸およびインク
タル酸、などがあるが、特に室温において液状の無水メ
チルテトラハイドロフタル酸および無水メチルベキサハ
イドロフタル酸の使用が好ましい。又これらの酸無水物
は単独および2種以上の使用が可能である。Examples of the acid anhydride of the curing agent according to the present invention include phthalic anhydride, tetranohydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylbexanohydrophthalic anhydride, and inctaric acid. Preference is given to using methyltetrahydrophthalic anhydride and methylbexahydrophthalic anhydride which are liquid, especially at room temperature. Further, these acid anhydrides can be used alone or in combination of two or more.
この発明に係わる硬化剤のフェノール樹脂としては、例
えばビスフェノールA、トリメチロールアリルオキシフ
ェノール、低重合度のフェノールノボラック樹脂および
グチル化フェノール樹脂などがある。Examples of the phenolic resin of the curing agent according to the present invention include bisphenol A, trimethylolallyloxyphenol, phenol novolac resin with a low degree of polymerization, and gtylated phenol resin.
又、硬化剤として用いる酸無水物とフェノール樹脂の混
合物は、エポキシ樹脂のエポキシ基1当量に対し、混合
物として0.4〜1.2当量、好適には06〜1.0当
量の範囲での使用が好ましく、さらに混合硬化剤中のフ
ェノール樹脂の割合は、当量比で酸無水物(A、A、)
/フェノール樹脂(Ph、)=0.3〜7,0、好適に
は0.6〜4.5の範囲の使用である。Further, the mixture of acid anhydride and phenol resin used as a curing agent is in the range of 0.4 to 1.2 equivalents, preferably 0.6 to 1.0 equivalents, per 1 equivalent of the epoxy group of the epoxy resin. It is preferable to use the acid anhydride (A, A,
/phenol resin (Ph) = 0.3 to 7.0, preferably 0.6 to 4.5.
混合硬化剤の量が0.4当量より少ないと硬化物の熱変
形温度が低下し耐湿性の低下をきたす。また、1.2当
量より多くなると過料の混合硬化剤の影響を受け耐湿性
の低下につながりいずれも好ましくない。If the amount of the mixed curing agent is less than 0.4 equivalent, the heat distortion temperature of the cured product will decrease, resulting in a decrease in moisture resistance. On the other hand, if the amount exceeds 1.2 equivalents, the moisture resistance will be lowered due to the influence of the mixed curing agent of the additive, which is not preferable.
′また、酸無水物とフェノール樹脂の混合比が03より
小さいと封止材料が固形化し、低圧注入性に劣り、7.
0より大きいと耐湿性に劣る。'Furthermore, if the mixing ratio of acid anhydride and phenolic resin is less than 0.3, the sealing material will solidify, resulting in poor low-pressure injection properties.7.
If it is larger than 0, the moisture resistance will be poor.
この発明に係わる無機充填剤としては例えば結晶性シリ
カ、溶融シリカ、アルミナおよびガラス繊維などがある
が、特に充填性、純度などに優れた溶融シリカの使用が
好ましい。これらの充填剤は単独およびは2種以上の使
用が可能で、その使用量は具体的種類などによって相逮
するが、一般的には硬化剤を含有するエポキシ樹脂10
0重量部に対して100〜600重量部の範囲が好まし
い。Examples of the inorganic filler according to the present invention include crystalline silica, fused silica, alumina, and glass fiber, but it is particularly preferable to use fused silica because of its excellent filling properties and purity. These fillers can be used alone or in combination of two or more, and the amount used depends on the specific type, but in general, epoxy resin containing a curing agent
The range of 100 to 600 parts by weight is preferable relative to 0 parts by weight.
100重量部より少ないと膨張係数が大きくなり耐クラ
ンク性に劣り、600重量部より多いと高粘度化し低圧
注入性に劣る。なお、必要に応じ三酸化アンチモンのよ
うな難燃助剤の添加も可能である。If it is less than 100 parts by weight, the expansion coefficient will be large and the crank resistance will be poor, and if it is more than 600 parts by weight, the viscosity will be high and the low pressure injection properties will be poor. Incidentally, it is also possible to add a flame retardant aid such as antimony trioxide if necessary.
この発明のカップリング剤としては、例えばT−グリシ
ドキシプロピルトリメトキシシラン、β−(3,4−エ
ポキシシクロヘキシル)エチルトリメトキシシラン、ビ
ニルトリー2−メトキシシラン、およびフェニルトリメ
トキシシランなどのシラン化合物が使用できるが、特に
充填性およびエポキシ樹脂との反応性に優れたr−グリ
シドキシプロピルトリメトキシシラン、β−(3,4−
エポキシシクロヘキシル)エチルトリメトキシシラン、
および疎水性に優れたフェニルトリメトキシシランの使
用が好ましい。これらのカップリング剤は単独およびは
2種以上の使用が可能で、その使用量は充填剤100重
量部に対して0.1〜3重量部、好ましくけ0.2〜2
重量部の範囲である。0.1重量部よりも少ないと充て
ん剤とエポキシ樹脂の接着性に劣り、耐湿性の低下をも
たらし、3重量部より多いと過料のカップリング剤が樹
脂の劣化を促進し、耐湿性の低下をもたらす。Coupling agents of the present invention include silane compounds such as T-glycidoxypropyltrimethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, vinyltri-2-methoxysilane, and phenyltrimethoxysilane. r-glycidoxypropyltrimethoxysilane, β-(3,4-
epoxycyclohexyl)ethyltrimethoxysilane,
It is preferable to use phenyltrimethoxysilane, which has excellent hydrophobicity. These coupling agents can be used alone or in combination of two or more, and the amount used is 0.1 to 3 parts by weight, preferably 0.2 to 2 parts by weight, per 100 parts by weight of the filler.
Parts by weight range. If it is less than 0.1 part by weight, the adhesion between the filler and the epoxy resin will be poor, leading to a decrease in moisture resistance, and if it is more than 3 parts by weight, the coupling agent in the filler will accelerate the deterioration of the resin, resulting in a decrease in moisture resistance. bring about.
この発明に係わる硬化促進剤さしては、例えばイミダゾ
ール化合物および第3級アミンなどがある。Examples of the curing accelerator according to the present invention include imidazole compounds and tertiary amines.
又、この発明の半導体封止用液状エポキシ樹脂組成物が
、必要に応じてカーボンブランクなどの着色剤、カルナ
ウバワックスおよび合成ワックスなどの離型剤を含有す
ることも可能である。Further, the liquid epoxy resin composition for semiconductor encapsulation of the present invention can also contain a colorant such as carbon blank, and a mold release agent such as carnauba wax and synthetic wax, if necessary.
なお、この発明の実施例の半導体封止用液状エポキシ樹
脂組成物は従来の半導体封止材料の調整などに使用され
ている公知の混合装置、たとえばロール、ニーダおよび
ライカイ機などを用いることKよって容易に調製できる
。The liquid epoxy resin composition for semiconductor encapsulation of the embodiments of the present invention can be prepared by using a known mixing device, such as a roll, kneader, or light machine, which is used in the preparation of conventional semiconductor encapsulation materials. Easy to prepare.
以下、実施例、比較例をあげてこの発明をさらに詳細に
説明する。The present invention will be explained in more detail below with reference to Examples and Comparative Examples.
(9)
表IK実施例および比較例に用いた樹脂組成を示す。常
法により調製し半導体封止用液状エポキシ樹脂組成物と
した。(9) Table IK shows the resin composition used in Examples and Comparative Examples. A liquid epoxy resin composition for semiconductor encapsulation was prepared by a conventional method.
表2にはこれら調製した組成物の50℃においてB型回
転粘度計で測定した粘度を示す。Table 2 shows the viscosities of these prepared compositions as measured with a B-type rotational viscometer at 50°C.
又、これら調製した組成物により耐湿性評価用シリコン
素子を170℃、3分間の成形条件でモールドし、さら
に170℃、8時間後硬化し耐湿試験用試料を得た。Furthermore, a silicon element for moisture resistance evaluation was molded using the prepared composition under molding conditions of 170° C. for 3 minutes, and further cured at 170° C. for 8 hours to obtain a sample for moisture resistance test.
耐湿試験1d P CT (Pressur Cook
er Te5t) 121°C12気圧の条件下での不
良発生時間により測定し、結果を表3に示す。Humidity test 1d P CT (Pressur Cook
The results are shown in Table 3.
なお、比較例12は、液体とならず低圧注入成型機での
モールドは不可能であった。Note that Comparative Example 12 did not become liquid and could not be molded with a low-pressure injection molding machine.
表2から明らかなように、この発明の組成物は液体とな
るため低圧注入が可能々なり、しかも、表3から明らか
なように、耐湿信頼性にも非常に優れていることがわか
る。As is clear from Table 2, since the composition of the present invention is liquid, low-pressure injection is possible, and as is clear from Table 3, it also has excellent moisture resistance reliability.
(lO) (11) 表 3 後硬化し耐湿試験用試料を得た。(lO) (11) Table 3 After curing, a sample for moisture resistance test was obtained.
耐湿試験1d P CT(Pressur Cooke
r Te5t) 121℃、2気圧の条件下での不良発
生時間により測定(12)
し、結果を表3に示す。Humidity test 1d P CT (Pressur Cooke
rTe5t) Measured by the failure occurrence time under conditions of 121°C and 2 atm (12), and the results are shown in Table 3.
なお、比較例12は、液体とならず低圧注入成型機での
モールドは不可能であった。Note that Comparative Example 12 did not become liquid and could not be molded with a low-pressure injection molding machine.
表2から明らかなように、この発明の組成物は液体とな
るため低圧注入が可能となり、しかも、表3から明らか
なように、耐湿信頼性にも非常に優れていることがわか
る。As is clear from Table 2, since the composition of the present invention becomes a liquid, low-pressure injection is possible, and as is clear from Table 3, it is also found to have excellent moisture resistance reliability.
〔発明の効果]
以上説明したとうり、この発明はエポキシ樹脂、この硬
化剤としての酸無水物およびフェノール樹脂の混合物、
無機充填剤、カップリング剤および硬化促進剤を含有す
るものを用いるこ吉により、低圧注入性、硬化性および
耐湿信頼性に優れた半導体封止用液状エポキシ樹脂組成
物を得ることができ、例えば工C,LSIなどの半導体
素子の封止用樹脂として有用である。[Effects of the Invention] As explained above, the present invention provides a mixture of an epoxy resin, an acid anhydride as a curing agent, and a phenol resin,
By using a composition containing an inorganic filler, a coupling agent, and a curing accelerator, it is possible to obtain a liquid epoxy resin composition for semiconductor encapsulation that has excellent low-pressure injectability, curability, and moisture resistance reliability. It is useful as a resin for sealing semiconductor devices such as PCB and LSI.
代理人大岩 増雄
(13)
第1頁の続き
[相]Int、C1,’ 識別記号 庁内整理番号0発
明 者 安 藤 虎 彦 尼崎市塚口本町究所内Agent Masuo Oiwa (13) Continued from page 1 [Phase] Int, C1,' Identification code Internal reference number 0 Inventor Torahiko Ando Inside the Tsukaguchi Honmachi Institute, Amagasaki City
Claims (1)
フェノール樹脂の混合物、無機充填剤、カンプリング剤
および硬化促進剤を含有する半導体封止用液状エポキシ
樹脂組成物。 (2)硬化剤混合物の酸無水物とフェノール樹脂の当箪
比が、酸無水物/フェノール樹脂=0.3〜7.0の範
囲である特許請求の範囲第1項記載の半導体封止用液状
エポキシ樹脂組成物。 (3)酸無水物が、無水メチルテトラハイドロフタル酸
および無水メチルヘキサハイドロ7タル酸の内の少なく
とも一種である特許請求の範囲第1項又は第2項記載の
半導体封止用液状エポキシ樹脂組成物。[Scope of Claims] (]) A liquid epoxy resin composition for semiconductor encapsulation, which contains an epoxy resin, a mixture of an acid anhydride and a phenol resin as a curing agent, an inorganic filler, a camping agent, and a curing accelerator. (2) For semiconductor encapsulation according to claim 1, wherein the equivalent ratio of acid anhydride and phenolic resin in the curing agent mixture is in the range of acid anhydride/phenol resin = 0.3 to 7.0. Liquid epoxy resin composition. (3) The liquid epoxy resin composition for semiconductor encapsulation according to claim 1 or 2, wherein the acid anhydride is at least one of methyltetrahydrophthalic anhydride and methylhexahydroheptalic anhydride. thing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4841584A JPS60190418A (en) | 1984-03-12 | 1984-03-12 | Liquid epoxy resin composition for sealing semiconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4841584A JPS60190418A (en) | 1984-03-12 | 1984-03-12 | Liquid epoxy resin composition for sealing semiconductors |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60190418A true JPS60190418A (en) | 1985-09-27 |
Family
ID=12802673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4841584A Pending JPS60190418A (en) | 1984-03-12 | 1984-03-12 | Liquid epoxy resin composition for sealing semiconductors |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60190418A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02110126A (en) * | 1988-10-19 | 1990-04-23 | Oki Electric Ind Co Ltd | Sealing material and semiconductor device sealed therewith |
JPH0324115A (en) * | 1989-06-22 | 1991-02-01 | Nippon Kayaku Co Ltd | Epoxy resin composition |
US5418265A (en) * | 1991-01-25 | 1995-05-23 | Somar Corporation | Powder epoxy resin coating composition |
WO2006022693A1 (en) * | 2004-08-05 | 2006-03-02 | Fry's Metals, Inc. | Low voiding no flow fluxing underfill for electronic devices |
US7247683B2 (en) | 2004-08-05 | 2007-07-24 | Fry's Metals, Inc. | Low voiding no flow fluxing underfill for electronic devices |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49122598A (en) * | 1973-03-30 | 1974-11-22 | ||
JPS52135673A (en) * | 1976-05-10 | 1977-11-12 | Hitachi Ltd | Resin composition for semiconductor sealing |
JPS5740524A (en) * | 1980-08-25 | 1982-03-06 | Toshiba Corp | Epoxy resin composition |
JPS58198525A (en) * | 1982-05-14 | 1983-11-18 | Sanyurejin Kk | Epoxy resin composition |
JPS58225118A (en) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | Epoxy resin composition |
JPS598721A (en) * | 1982-07-07 | 1984-01-18 | Mitsubishi Electric Corp | Liquid epoxy resin composition for sealing semiconductor |
JPS59177947A (en) * | 1983-03-29 | 1984-10-08 | Toshiba Corp | Epoxy resin sealing type semiconductor device |
JPS60127748A (en) * | 1983-12-15 | 1985-07-08 | Toshiba Corp | Resin-sealed semiconductor device |
-
1984
- 1984-03-12 JP JP4841584A patent/JPS60190418A/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49122598A (en) * | 1973-03-30 | 1974-11-22 | ||
JPS52135673A (en) * | 1976-05-10 | 1977-11-12 | Hitachi Ltd | Resin composition for semiconductor sealing |
JPS5740524A (en) * | 1980-08-25 | 1982-03-06 | Toshiba Corp | Epoxy resin composition |
JPS58198525A (en) * | 1982-05-14 | 1983-11-18 | Sanyurejin Kk | Epoxy resin composition |
JPS58225118A (en) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | Epoxy resin composition |
JPS598721A (en) * | 1982-07-07 | 1984-01-18 | Mitsubishi Electric Corp | Liquid epoxy resin composition for sealing semiconductor |
JPS59177947A (en) * | 1983-03-29 | 1984-10-08 | Toshiba Corp | Epoxy resin sealing type semiconductor device |
JPS60127748A (en) * | 1983-12-15 | 1985-07-08 | Toshiba Corp | Resin-sealed semiconductor device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02110126A (en) * | 1988-10-19 | 1990-04-23 | Oki Electric Ind Co Ltd | Sealing material and semiconductor device sealed therewith |
JPH0324115A (en) * | 1989-06-22 | 1991-02-01 | Nippon Kayaku Co Ltd | Epoxy resin composition |
US5418265A (en) * | 1991-01-25 | 1995-05-23 | Somar Corporation | Powder epoxy resin coating composition |
WO2006022693A1 (en) * | 2004-08-05 | 2006-03-02 | Fry's Metals, Inc. | Low voiding no flow fluxing underfill for electronic devices |
US7247683B2 (en) | 2004-08-05 | 2007-07-24 | Fry's Metals, Inc. | Low voiding no flow fluxing underfill for electronic devices |
JP2008509241A (en) * | 2004-08-05 | 2008-03-27 | フライズ・メタルズ・インコーポレイテッド | Low porosity non-flowing fluxing underfill for electronic devices |
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