JPS60188405A - Polymer containing photoisomerizable atomic group, and its use - Google Patents

Polymer containing photoisomerizable atomic group, and its use

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Publication number
JPS60188405A
JPS60188405A JP59042838A JP4283884A JPS60188405A JP S60188405 A JPS60188405 A JP S60188405A JP 59042838 A JP59042838 A JP 59042838A JP 4283884 A JP4283884 A JP 4283884A JP S60188405 A JPS60188405 A JP S60188405A
Authority
JP
Japan
Prior art keywords
group
polymer
bonded
bulky
main chain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59042838A
Other languages
Japanese (ja)
Inventor
Koichi Arishima
功一 有島
Taketoshi Matsuura
松浦 武利
Hidetoshi Tsuchida
英俊 土田
Junko Shigehara
淳孝 重原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59042838A priority Critical patent/JPS60188405A/en
Publication of JPS60188405A publication Critical patent/JPS60188405A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:A polymer which can give an optical memory material having a good film-forming property, comprising a polymer of an olefinic double-bond-containing compound and side chains bonded thereto and comprising proton-transfer-type photoisomerizable atomic groups and bulky groups capable of sterically hindering the atomic groups. CONSTITUTION:The titled polymer composed of the main chain comprising a carbon-carbon chain of a polymer of an olefinic double bond-containing compound and side chains bonded to the main chain and comprising proton transfer-type photoisomerizable atomic groups and bulky groups capable of sterically hindering the atomic groups. Representative examples of these polymers include those having structural units of the formula (wherein R1 and R2 are each H or CH3, R0 is a bulky group of which the bulky alkyl or aromatic group is bonded to the main chain directly or through an amino group or a carboxyl group, P is an atomic group in which the proton transfer-type photoisomerizable molecule is bonded to the main chain directly or through a bivalent group, and X is a number except 0). By introducing the guest molecules as pendants to the polymer, it is possible to obtain an optical memory material in which the heightening of the concentration of guest molecules and the heightening of the temperature of memory hold can be attained and which has good film-forming property.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、オレフィン性二重結合をもつ化合物から得ら
れる重合体における炭素−炭素結合全主鎖とし、その側
@にプロトン移動型の光異性化原子団が結合している重
合体、及び該重合体の低温下における7“ロトン移@に
よる光異性化現象全利用した、波長多重記憶可能な光記
憶材料に関する。
Detailed Description of the Invention [Industrial Field of Application] The present invention is directed to the entire main chain of carbon-carbon bonds in a polymer obtained from a compound having an olefinic double bond, and a proton-transfer type light on the side thereof. The present invention relates to a polymer to which an isomerizable atomic group is bonded, and an optical storage material capable of wavelength multiplexing storage, which takes full advantage of the photoisomerization phenomenon caused by 7" roton transfer @ at low temperatures.

〔従来技術〕[Prior art]

従来、プロトン移動により光異性化を示すゲスト分子を
用いた光記憶材料としては、該ゲスト分子、例えばメタ
ルフリーポルフィリン、メタルフリークロリン、メタル
フリーフタロシアニン及びキニザリン等を、アルカン又
はアルカノール等の液体中に、あるいはポリビニルヵル
バゾーノペポリメチルメタクリレ〜ト(以下、PMMA
 と略記する)、ポリスチレン、ポリビニルアルコール
、ポリエチレングリコール及びポリカーボネート等のポ
リマーなるホスト材料中に分散した系が使用されてきた
。このため、溶解性の悪いゲスト分子の場合には低濃度
においてのみ分散できるに過ぎず、記憶密度ヲ大きくし
た場合に、充分な吸収又は発光の情報が得られないとい
う欠点があった。更に、ゲスト分子とホスト分子は電子
的相互作用のみで立体的な規制効果はないため、液体ヘ
リウム温度〜80にという分子の回転が大きくなる領域
でのメモリ保持性が非常に悪いという欠点があった。ま
た、アルカン、アルカノール等の液体ホスト材料は、光
記憶材料の作製において光学セル等全使用しなければな
らず、取扱い及び薄膜化等で問題があった。
Conventionally, optical storage materials using guest molecules that exhibit photoisomerization due to proton transfer include the guest molecules, such as metal-free porphyrin, metal-free chlorin, metal-free phthalocyanine, and quinizarin, in a liquid such as an alkane or an alkanol. , or polyvinylcarbazonope polymethyl methacrylate (hereinafter referred to as PMMA)
Systems dispersed in polymeric host materials such as polystyrene, polyvinyl alcohol, polyethylene glycol, and polycarbonate have been used. Therefore, in the case of guest molecules with poor solubility, they can be dispersed only at low concentrations, and when the storage density is increased, there is a drawback that sufficient absorption or emission information cannot be obtained. Furthermore, since the guest molecule and the host molecule only interact electronically and there is no steric regulation effect, there is a drawback that memory retention is extremely poor in the region where molecular rotation is large, such as at liquid helium temperatures of ~80°C. Ta. In addition, liquid host materials such as alkanes and alkanols must be used in their entirety, including optical cells, in the production of optical storage materials, which poses problems in handling, thinning, and the like.

〔発明の目的〕[Purpose of the invention]

本発明は前記のような問題点を解決するためになされた
ものであり、その目的は、前記のようなゲスト分子を有
す光記憶材料用に特に好適なる新規な重合体、及びゲス
ト分子の高濃度とメモリ保持温度の高温化が達成された
、良好な膜形成能をもつ光記憶材料全提供することKあ
る。
The present invention was made in order to solve the above-mentioned problems, and its purpose is to provide a novel polymer particularly suitable for optical storage materials having the above-mentioned guest molecules, and An object of the present invention is to provide an optical storage material that has a high concentration and a high memory retention temperature and has good film-forming ability.

〔発明の構成〕[Structure of the invention]

本発明を概説すれば、本発明の第1の発明は新規な重合
体に関する発明であって、オレフィン性二重結合をもつ
化合物から得られる重合体の側鎖に、プロトン移動型の
光異性化原子団と、それを立体規制する嵩高な基とが結
合していること全特徴とする。
To summarize the present invention, the first invention of the present invention relates to a novel polymer, in which proton transfer type photoisomerization is applied to the side chain of a polymer obtained from a compound having an olefinic double bond. It is characterized by a bond between an atomic group and a bulky group that sterically restricts it.

また、本発明の第2の発明は光記憶材料に関する発明で
あって、該材料が、上記第1の発明の重合体全包含して
いることを特徴とする。
Further, the second invention of the present invention relates to an optical memory material, and is characterized in that the material contains all of the polymer of the first invention.

すなわち、本発明の重合体において、その主鎖は、オレ
フィン性二重結合會もつ化合?!Iから得られる重合体
におけるような炭素−炭素結合であり、その側鎖に、既
述のゲスト分子と、それ全立体規制する嵩高な基がペン
ダント型に結合している。
That is, in the polymer of the present invention, the main chain is a compound having an olefinic double bond association. ! It is a carbon-carbon bond as in the polymer obtained from I, and the above-mentioned guest molecule and a bulky group that sterically restricts the entire structure are bonded pendantly to the side chain of the carbon-carbon bond.

それ故、本発明の重合体の代表例には、下記一般式■: (式中、R1及びR3は水素又はメチル基、Roは嵩高
なアルキル基又は芳香族基が、主鎖に直接結合又はアミ
ド基若しくはカルボキシ基を介して結合している嵩高な
基、■はプロトン移動型の光異性化分子すなわちゲスト
分子が、主鎖に直接結合又は2価の基を介して結合して
いる原子団、そしてXは零以外の実数全意味する)で表
される構造単位を含有する重合体がある。
Therefore, representative examples of the polymers of the present invention include the following general formula (1): (wherein R1 and R3 are hydrogen or methyl groups, Ro is a bulky alkyl group or an aromatic group, directly bonded to the main chain or A bulky group bonded via an amide group or a carboxy group; ① is an atomic group to which a proton transfer type photoisomerizable molecule, i.e., a guest molecule, is bonded directly to the main chain or via a divalent group; , and X means all real numbers other than zero).

本発明の重合体におけるゲスト分子の例には、既述の公
知のものが挙げられる。
Examples of the guest molecules in the polymer of the present invention include the known ones mentioned above.

したがって、本発明の重合体は、例えば下記の谷方法に
よって製造することができる。
Therefore, the polymer of the present invention can be produced, for example, by the Tani method described below.

(11ゲスト分子及びオレフィン性二重結合を有スルモ
ノマー(A)と、嵩高な基及びオレフィン性二重結合を
有する七ツマ−(B)と全共重合させる方法、(2)反
応性官能基及びオレフィン性二重結合含有するモノマー
(0)と、モノマー(Blとt共重合させ、次いで該反
応性官能基との反応によってゲスト分子全ペンダント化
する方i、f3)逆にモノマー(OJとモノマー(A)
とを反応させ、次いで該反応性官能基との反応によって
嵩高な基金導入する方法等がある。
(11) A method of completely copolymerizing a guest molecule and an olefinic double bond with a sulmonomer (A) and a monomer (B) having a bulky group and an olefinic double bond, (2) a reactive functional group and A monomer (0) containing an olefinic double bond, a monomer (i, f3 in which the guest molecules are all pendant by copolymerizing Bl and t, and then reacted with the reactive functional group), and a monomer (OJ and the monomer (A)
There is a method in which a bulky fund is introduced by reacting with the reactive functional group and then reacting with the reactive functional group.

モノマー(A)の例としては、ゲスト分子が直接又はア
ルキレン基若しくはアミン基金介して結合しているオレ
フィン、ジエン類、ゲスト分子の(メタ)アクリル酸エ
ステル又はN−置換アミドが挙げられる。七ツマ−(B
)の例としては、高級オレフィン、ジエン類、(メタ)
アクリル酸の高級アルキルエステル又はN−置換アミド
、おるいはスチレン類が挙けられる。そして、七ツマ−
(0)の例としては、ハロゲン化ビニル、(メタ)アク
リル酸、その低級アルキルエステル若しくは酸ハライド
等が挙げられる。その共重合又は置換反応は常法でよい
Examples of monomers (A) include olefins, dienes, (meth)acrylic acid esters or N-substituted amides of guest molecules, to which the guest molecules are bonded directly or via alkylene groups or amine groups. Nanatsuma (B
) Examples include higher olefins, dienes, (meth)
Examples include higher alkyl esters or N-substituted amides of acrylic acid, and styrenes. And, seven months
Examples of (0) include vinyl halides, (meth)acrylic acid, lower alkyl esters thereof, and acid halides. The copolymerization or substitution reaction may be carried out by a conventional method.

なお、本発明の重合体の分子量の好−ましい範囲は、1
000〜数10万である。
The preferred range of the molecular weight of the polymer of the present invention is 1
000 to several 100,000.

本発明の重合体は、既述のように、本発明の第2の発明
の光記憶材料用として有用である。
As mentioned above, the polymer of the present invention is useful as the optical storage material of the second aspect of the present invention.

その場合、該重合体は、薄膜形成能を有するものが好適
である。
In that case, the polymer preferably has the ability to form a thin film.

史に、本発明の重合体は、上記用途のほかに、金属イオ
ンのトラップ材としても有用である。
Historically, in addition to the above uses, the polymer of the present invention is also useful as a metal ion trapping material.

次に、本発明の光記憶材料は、前記のような構成である
ので、ゲスト分子の畠磯度化と立体規制化が図られる。
Next, since the optical storage material of the present invention has the above-described structure, the guest molecules can be made to be highly specific and sterically restricted.

そして、高密度記録にょるS / N比の低下が防止さ
れると共に、sat以下でのメモリ保持性が高いので、
保持温度の高温化が容易となっている。更に、重合体と
して薄膜形成能含有するもの全使用すれば、高密度記録
に必要な材料の薄膜化も達成はれ有効である。
In addition, it prevents the S/N ratio from decreasing due to high-density recording, and has high memory retention at sat or lower temperatures.
It is easy to increase the holding temperature. Furthermore, by using all polymers that have the ability to form thin films, it is effective to achieve thin films of materials necessary for high-density recording.

〔実施例〕〔Example〕

以下、本発明を実施例により更に具体的に説明するが、
本発明はこれら実施例に限定されない。
Hereinafter, the present invention will be explained in more detail with reference to Examples.
The invention is not limited to these examples.

なお、第1図は本発明の実施例(a)と比較例(1))
の温度(X)(横軸)とホール深さく%)との関係を示
すグラフである。
Note that FIG. 1 shows Example (a) of the present invention and Comparative Example (1)).
It is a graph showing the relationship between temperature (X) (horizontal axis) and hole depth (%).

実施例1 ベンズアルデヒド25j’、p−二)ロベンズアルデヒ
ド11.95f全プロピオン酸に溶解し、ビロール21
.119と反応させ析出結晶全r集し、濃塩酸500m
JK浴解後、S俗解 O4・2 Hz O全豹4Of加
え、約25分間反応させて還元全行い、カラム分離によ
り、メタルフリーテトラフェニルポルフィリン(以下、
TPPと略記する)のモノアミノ体2.1rを得た、こ
のモノアミノ体全当量のトリエチルアミンと塩化メチレ
ン中で混合し、メタクリル酸クロライド全滴下し、反応
後、カラムにてメソ−モノ−(p−メタクリルアミドフ
ェニル)−トリフェニルポルフィリン(以下、MATP
Pと略記する) 1.5 fを得た。得られたMATP
P 5.6 mW とt−ブチルメタクリルアミドをテ
トラヒドロフラン(以下、THE’と略記する)中に溶
解し、60℃にて12時間重合させ、MATPPとt−
ブチルメタクリルアミドの共重合体i2fを得た。共重
合比は5X10−4:1である。また、その分子量は、
約12000である。
Example 1 Benzaldehyde 25j', p-2) Robenzaldehyde 11.95f dissolved in total propionic acid, virol 21
.. Collect all the crystals precipitated by reacting with 119, and add 500ml of concentrated hydrochloric acid.
After dissolution in the JK bath, 40% of S O4.2 Hz O was added, and the mixture was allowed to react for about 25 minutes for complete reduction, and by column separation, metal-free tetraphenylporphyrin (hereinafter referred to as
The monoamino compound 2.1r of the monoamino compound (abbreviated as TPP) was obtained. This monoamino compound was mixed with the total equivalent of triethylamine in methylene chloride, all of the methacrylic acid chloride was added dropwise, and after the reaction, the meso-mono-(p- (methacrylamidophenyl)-triphenylporphyrin (hereinafter MATP)
(abbreviated as P) 1.5 f was obtained. Obtained MATP
P 5.6 mW and t-butylmethacrylamide were dissolved in tetrahydrofuran (hereinafter abbreviated as THE') and polymerized at 60°C for 12 hours to form MATPP and t-butylmethacrylamide.
A copolymer i2f of butyl methacrylamide was obtained. The copolymerization ratio is 5X10-4:1. In addition, its molecular weight is
Approximately 12,000.

この共重合体はTHF K溶解させ、キャスト法により
膜厚0.1 waのフィルム’に作製し、クライオスタ
ットで4.2KK冷却後、色素レーザを用い吸収スペク
トル中にホールを生成させた。
This copolymer was dissolved in THF K, produced into a film with a thickness of 0.1 wa by a casting method, cooled by 4.2 KK in a cryostat, and holes were generated in the absorption spectrum using a dye laser.

クライオスタットの温度を上昇させながら、ホールの深
さを焦点距離1mの分光器を含む分光系で観測したとこ
ろ、第1図(a)に示す温度依存性が得られた。第1図
において横軸は媒体の温度(K)であって、縦軸は4.
2xにおけるホール深さに対する各温度におけるホール
深さの割合(%)である。
When the depth of the hole was observed using a spectroscopic system including a spectrometer with a focal length of 1 m while increasing the temperature of the cryostat, the temperature dependence shown in Fig. 1(a) was obtained. In FIG. 1, the horizontal axis is the temperature (K) of the medium, and the vertical axis is 4.
This is the ratio (%) of the hole depth at each temperature to the hole depth at 2x.

比較例1 TPP トPMMA (i−モル比テ5 X 10−’
 : 1 O割合でTHP溶液と共に混合溶解後キャス
トし、膜厚α1鱈(2)フィルムを得た。このフィルム
ラ実施例1と同様の方法でホール生成後、ホール深さの
温度依存性を調べ第1図(b)の結果を得た。
Comparative Example 1 TPP to PMMA (i-molar ratio 5 x 10-'
: 1O was mixed and dissolved with a THP solution and then cast to obtain a cod (2) film with a thickness of α1. After forming holes in this film in the same manner as in Example 1, the temperature dependence of the hole depth was examined and the results shown in FIG. 1(b) were obtained.

実施例1において、ゲスト分子であるTPPはペンダン
ト化され、周りの嵩高いt−ブチル基により、立体規制
全受けているのに対し、比較例1におけるTPPは自由
であるため、4.2に〜160にの幅広い温度範囲にお
いて、温度上昇に伴うホール深さの減少率がペンダント
ポリマーの方が小さくホール保持性が良いことがわかっ
た。
In Example 1, the guest molecule TPP is pendant and completely sterically restricted by the surrounding bulky t-butyl group, whereas TPP in Comparative Example 1 is free, so it is It was found that in a wide temperature range of ~160° C., the pendant polymer had a smaller rate of decrease in hole depth with increasing temperature and had better hole retention.

実施例2 メタクリル酸クロライド1.04 fとメタクリル酸ヘ
キシルエステル170 f ′ft’THIF IC俗
解後、60℃、12時間重合し共重合体會得た。得られ
た共重合体と、実施例1と同様の方法で合成したTPP
のモノアミノ体とをトリエチルアミン中で反応させ、’
rpp−6ペンダント化した。TPPのメタクリル基に
対する割合は1:10である。
Example 2 1.04 f of methacrylic acid chloride and 170 f'ft' THIF of methacrylic acid hexyl ester After IC generalization, the mixture was polymerized at 60° C. for 12 hours to obtain a copolymer. The obtained copolymer and TPP synthesized in the same manner as in Example 1
by reacting with the monoamino form of ' in triethylamine,
rpp-6 pendant. The ratio of TPP to methacrylic groups is 1:10.

まえ、その分子量は約25000である。Its molecular weight is approximately 25,000.

このようにして得られた高濃度TPPペンダントポリマ
ーi THF Ic 俗解後スピンキャスト法により膜
厚10μmの試料を得た。
After the high concentration TPP pendant polymer i THF Ic obtained in this manner was used, a sample with a film thickness of 10 μm was obtained by spin casting.

この試料全実施例1と同様の方法で10μm径のホール
全形成させたところ、吸光度α1のスペクトル中に吸光
度変化aoiのホールが形成することより、膜厚10μ
mの薄い膜におい[も充分な信号が得られ、高濃度化の
効果が顕著に見られた。
When all holes with a diameter of 10 μm were formed in this sample in the same manner as in Example 1, holes with an absorbance change of aoi were formed in the spectrum of absorbance α1, indicating that the film thickness was 10 μm.
A sufficient signal was obtained with the thin film of 0.0 m, and the effect of increasing the concentration was noticeable.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明の重合体におけるように、
ゲスト分子會ポリマーにペンダント化することにより本
発明の光記憶材料ては、高濃度化、立体規制化、良好な
膜形成能が図られ、極低温における光異性化媒体として
、高密度記録による8 / N比の低下全防止すると共
に、SOX以下でのメモリ保持性が高いことよシ、保持
温度の高温化が容易となり、更に、高密度記録に必要な
媒体の薄膜化が可能となる大きな利点を有する。
As explained above, as in the polymer of the present invention,
By making guest molecules pendant in the polymer, the optical storage material of the present invention achieves high concentration, steric regulation, and good film forming ability, and can be used as a photoisomerization medium at extremely low temperatures by high-density recording. / The big advantage is that it completely prevents the decline in the N ratio, has high memory retention at temperatures below SOX, makes it easier to raise the retention temperature, and also allows thinner media, which is necessary for high-density recording. has.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例(a)と比較例(b)の温度と
ホール深さとの関係金示すグラフである。 第 / 図 手続補正書(自発補正) 昭和59年6月28日 特許庁長官 志 賀 学 殿 1、事件の表示 昭和59年特許願第42858号2発
明の名称 光異性化原子団を含む重合体及びその用途五
補正をする者 事件との関係 特許出願人 住 所 東京都千代田区内幸町1丁目1番6号名 称 
(422)日本電信電話公社 傾者真藤 恒
FIG. 1 is a graph showing the relationship between temperature and hole depth in Example (a) of the present invention and Comparative Example (b). No. / Drawing procedure amendment (voluntary amendment) June 28, 1980 Manabu Shiga, Commissioner of the Patent Office1, Indication of the case Patent Application No. 42858 of 19812 Title of the invention Polymer containing a photoisomerizable atomic group and its relationship to the case of the person making the fifth amendment of use Patent applicant address 1-1-6 Uchisaiwai-cho, Chiyoda-ku, Tokyo Name Name
(422) Hisashi Shindo, member of Nippon Telegraph and Telephone Public Corporation

Claims (1)

【特許請求の範囲】 t オレフィン性二重結合をもつ化合物から得られる重
合体の側鎖に、プロトン移動型の光異性化原子団と、そ
れを立体規制する嵩高な基とが結合していることを特徴
とする重合体。 2、該重合体が、下記一般式■: (式中、R1及びR,は水素又はメチル基、Ro は嵩
高なアルキル基又は芳香族基が、主鎖に直接結合又はア
ミド基若しくはカルボキシ基を介して結合している嵩高
な基、■はプロトン移動型の光異性化分子が、主鎖に直
接結合又は2価の基を介して結合している原子団、そし
てXは零以外の実数全意味する)で表される構造単位を
含有するものである特許請求の範囲第1項記載の重合体
。 & オレフィン性二重結合金もつ化合物から得られる重
合体の側鎖に、プロトン移動型の光異性化原子団と、そ
れを立体規制する嵩高な基とが結合している重合体を包
含するものであることを特徴とする光記憶材料。 4、 該重合体が、下記一般式I: (式中、馬 及びR3は水素又はメチル基、Ro は嵩
高なアルキル基又は芳香族基が、主鎖に直接結合又はア
ミド基若しくはカルボキシ基金弁して結合している嵩高
な基、■はプロトン移動型の光異性化分子が、主鎖に直
接結合又は2価の基を介して結合している原子団、セし
てXは零以外の実数全意味する)で表される構造単位全
含有するものである特許請求の範囲第3項記載の光記憶
材料。
[Scope of Claims] t A proton-transfer type photoisomerizable atomic group and a bulky group that sterically regulates the group are bonded to the side chain of a polymer obtained from a compound having an olefinic double bond. A polymer characterized by: 2. The polymer has the following general formula: (2) is an atomic group to which a proton-transfer type photoisomerizable molecule is bonded directly to the main chain or via a divalent group, and (X) is a bulky group that is bonded through The polymer according to claim 1, which contains a structural unit represented by: & Includes a polymer in which a proton-transfer type photoisomerizable atomic group and a bulky group that sterically regulates it are bonded to the side chain of the polymer obtained from a compound with an olefinic double bond gold. An optical memory material characterized by: 4. The polymer has the following general formula I: (wherein and R3 are hydrogen or methyl groups, and Ro is a bulky alkyl group or an aromatic group directly bonded to the main chain or an amide group or a carboxy group). (2) is a bulky group that is bonded to the main chain; 4. The optical storage material according to claim 3, which contains all of the structural units represented by the following.
JP59042838A 1984-03-08 1984-03-08 Polymer containing photoisomerizable atomic group, and its use Pending JPS60188405A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59042838A JPS60188405A (en) 1984-03-08 1984-03-08 Polymer containing photoisomerizable atomic group, and its use

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59042838A JPS60188405A (en) 1984-03-08 1984-03-08 Polymer containing photoisomerizable atomic group, and its use

Publications (1)

Publication Number Publication Date
JPS60188405A true JPS60188405A (en) 1985-09-25

Family

ID=12647115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59042838A Pending JPS60188405A (en) 1984-03-08 1984-03-08 Polymer containing photoisomerizable atomic group, and its use

Country Status (1)

Country Link
JP (1) JPS60188405A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62165649A (en) * 1986-01-17 1987-07-22 Mitsubishi Electric Corp Optical recording material
JPS646949A (en) * 1987-02-23 1989-01-11 Agency Ind Science Techn Cross-linked porphine-based optical recording medium

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5962188A (en) * 1982-10-02 1984-04-09 Tdk Corp Optical recording medium
JPS5971894A (en) * 1982-10-18 1984-04-23 Tdk Corp Optical recording medium

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5962188A (en) * 1982-10-02 1984-04-09 Tdk Corp Optical recording medium
JPS5971894A (en) * 1982-10-18 1984-04-23 Tdk Corp Optical recording medium

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62165649A (en) * 1986-01-17 1987-07-22 Mitsubishi Electric Corp Optical recording material
JPS646949A (en) * 1987-02-23 1989-01-11 Agency Ind Science Techn Cross-linked porphine-based optical recording medium
JPH0529101B2 (en) * 1987-02-23 1993-04-28 Kogyo Gijutsuin

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