JPS6018636B2 - 多重式にド−ブ剤を加えた且つ予定された形状の単結晶の連続製造法及びそのための装置 - Google Patents
多重式にド−ブ剤を加えた且つ予定された形状の単結晶の連続製造法及びそのための装置Info
- Publication number
- JPS6018636B2 JPS6018636B2 JP1170877A JP1170877A JPS6018636B2 JP S6018636 B2 JPS6018636 B2 JP S6018636B2 JP 1170877 A JP1170877 A JP 1170877A JP 1170877 A JP1170877 A JP 1170877A JP S6018636 B2 JPS6018636 B2 JP S6018636B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- production
- raw material
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7701014 | 1977-01-14 | ||
FR7701014A FR2377224A2 (fr) | 1977-01-14 | 1977-01-14 | Procede et dispositif de fabrication de monocristaux preformes a dopage multiple |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5389890A JPS5389890A (en) | 1978-08-08 |
JPS6018636B2 true JPS6018636B2 (ja) | 1985-05-11 |
Family
ID=9185495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1170877A Expired JPS6018636B2 (ja) | 1977-01-14 | 1977-02-07 | 多重式にド−ブ剤を加えた且つ予定された形状の単結晶の連続製造法及びそのための装置 |
Country Status (6)
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8005312A (nl) * | 1980-09-24 | 1982-04-16 | Philips Nv | Werkwijze voor het vervaardigen van ferriet eenkristallen. |
JPS59165470U (ja) * | 1984-02-29 | 1984-11-06 | ケイディディ株式会社 | 単結晶製造装置 |
WO1986006764A1 (en) * | 1985-05-17 | 1986-11-20 | J.C. Schumacher Company | Continuously pulled single crystal silicon ingots |
DE19936651A1 (de) * | 1999-08-04 | 2001-02-15 | Forsch Mineralische Und Metall | Verfahren und Herstellung eines segmentierten Kristalls |
-
1977
- 1977-01-14 FR FR7701014A patent/FR2377224A2/fr active Granted
- 1977-02-01 DE DE19772704043 patent/DE2704043C2/de not_active Expired
- 1977-02-02 CH CH127777A patent/CH619007A5/fr not_active IP Right Cessation
- 1977-02-02 GB GB424277A patent/GB1572914A/en not_active Expired
- 1977-02-07 IT IT6727177A patent/IT1116306B/it active
- 1977-02-07 JP JP1170877A patent/JPS6018636B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1572914A (en) | 1980-08-06 |
FR2377224B2 (US07321065-20080122-C00160.png) | 1981-06-12 |
DE2704043C2 (de) | 1983-09-01 |
CH619007A5 (en) | 1980-08-29 |
JPS5389890A (en) | 1978-08-08 |
DE2704043A1 (de) | 1978-07-20 |
FR2377224A2 (fr) | 1978-08-11 |
IT1116306B (it) | 1986-02-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4789022A (en) | Process for continuous casting of metal ribbon | |
CN101473055B (zh) | 多孔体的制造方法 | |
JPH09278590A (ja) | ボトムレス式の晶出室でシリコンから成る溶融液を一方向性凝固させてインゴットを形成するための方法および装置 | |
US4366024A (en) | Process for making solar cell base material | |
US4834832A (en) | Process and apparatus for the manufacture of silicon rods | |
JPS6033798B2 (ja) | 粗結晶から単結晶までの半導体材料製造方法 | |
US5314667A (en) | Method and apparatus for single crystal silicon production | |
US5462011A (en) | Method for pulling single crystals | |
JPS61270111A (ja) | けい素融解物を製造するためにけい素顆粒から成型体を製造する方法 | |
US4565600A (en) | Processes for the continuous preparation of single crystals | |
US5006317A (en) | Process for producing crystalline silicon ingot in a fluidized bed reactor | |
JPH09142988A (ja) | シリコン単結晶の生成方法及び装置 | |
US5067551A (en) | Method for manufacturing alloy rod having giant magnetostriction | |
JPS6018636B2 (ja) | 多重式にド−ブ剤を加えた且つ予定された形状の単結晶の連続製造法及びそのための装置 | |
EP1910246B1 (en) | Method for producing dense blocks | |
US3351433A (en) | Method of producing monocrystalline semiconductor rods | |
US2965456A (en) | Process for crystalline growth employing collimated electrical energy | |
US3272591A (en) | Production of single crystals from incongruently melting material | |
US5063986A (en) | Method for manufacturing alloy rod having giant magnetostriction | |
JPS5919914B2 (ja) | 予じめ成形した板状単結晶の連続製造用装置 | |
CN116393044B (zh) | 一种大颗粒SiC料合成装置以及工艺 | |
US3226193A (en) | Method for growing crystals | |
US3254955A (en) | Method of preparing a tantalum carbide crystal | |
JP2580523B2 (ja) | 二ホウ化チタン単結晶の育成法 | |
JP2997760B2 (ja) | 二ホウ化ハフニウム単結晶の製造方法 |