JPS60180885A - Information-recording medium - Google Patents

Information-recording medium

Info

Publication number
JPS60180885A
JPS60180885A JP59037784A JP3778484A JPS60180885A JP S60180885 A JPS60180885 A JP S60180885A JP 59037784 A JP59037784 A JP 59037784A JP 3778484 A JP3778484 A JP 3778484A JP S60180885 A JPS60180885 A JP S60180885A
Authority
JP
Japan
Prior art keywords
film
information recording
amorphous
recording layer
thermal conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59037784A
Other languages
Japanese (ja)
Inventor
Iwao Tsugawa
津川 岩雄
Minoru Nakajima
実 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59037784A priority Critical patent/JPS60180885A/en
Publication of JPS60180885A publication Critical patent/JPS60180885A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/254Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
    • G11B7/2542Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of organic resins
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24312Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24314Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24316Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)

Abstract

PURPOSE:To provide the titled medium capable of easily accomplishing conditions for rapid cooling and slow cooling in crystalline-amorphous transition of an information-recording layer and giving a clear pattern, comprising an information-recording layer in which transmittance is varired through crystalline-amorphous transition and a film the thermal conductivity of which varies with temperature. CONSTITUTION:A crystalline-amorphous transition film (e.g., TeGeSn) 22 consisting of an inorganic material film the light transmittance of which is varied through phase transition of a crystal is provided as the information-recording layer on a base 1 formed of a glass or the like, and a thermal conductivity variable film (e.g., a PVC film) 23 the thermal conductivity of which varies with temperature and which has a positive temperature coefficient is provided thereon to obtain the objective recording medium. When the medium is irradiated with laser beams, the irradiated regions 25, 24 are brought into a state in which heat is easily transmitted, and are rapidly cooled after the irradiation. Then the region 24 becomes an amorphous region, while the unirradiated regions of the films 23, 22 remain in a state in which heat is hardly released. Accordingly, the regions 25, 24 are rapidly cooled to become amorphous, while the unirradiated part around the regions 25, 24 are slowly cooled to remain in the crystalline state, providing a clear information record pattern.

Description

【発明の詳細な説明】 技術分野 本発明は、情報記録層として結晶の相転移が生ずる無機
材料薄膜を用いた情報記録媒体に関する@従来技術 従来、結晶非結晶質転移が比較的容易に起こる無機材料
を用いた情報記録媒体が提案されている・第1図に従来
の情報記録媒体を示してお9、図Aにおいて、真空蒸着
によりガラス尋の基板1上に無機材料層2を蒸着し、こ
れを図Bにおいて、熱処理によ多結晶化層(微結晶化)
2′となし、図Cにおいてレーザの照射によシ(ごく短
時間に強いレーザビームを照射する)照射部6を非晶質
化せしめるものである。結晶化部分は光の透過率が小さ
く、非晶質化部分は光の透過率が大きくなるから、上記
結晶非晶質転位によシ書込まれた情報を光の反射または
透過強度の変化として胱出すことができる。しかし、こ
の従来の情報記録媒体は、結晶の転移領域の鮮明度が十
分でなく、その不鮮明による配録パターンのエラーが生
じ易く、また情報記録層の材料(化学種)が狭い範囲に
限定されるという欠点があった。
Detailed Description of the Invention Technical Field The present invention relates to an information recording medium using a thin film of an inorganic material in which crystal phase transition occurs as an information recording layer @Prior art Conventionally, inorganic materials in which crystal phase transition occurs relatively easily Information recording media using materials have been proposed. Figure 1 shows a conventional information recording medium.9 In Figure A, an inorganic material layer 2 is deposited on a glass thick substrate 1 by vacuum deposition, In Figure B, this is shown as a polycrystalline layer (microcrystalline) by heat treatment.
2', the irradiation part 6 in FIG. C is made amorphous by laser irradiation (a strong laser beam is irradiated in a very short period of time). Crystallized parts have low light transmittance, while amorphous parts have high light transmittance, so the information written by the crystalline amorphous dislocations can be interpreted as a change in light reflection or transmission intensity. I can get my bladder out. However, in this conventional information recording medium, the clarity of the transition region of the crystal is not sufficient, and errors in the recorded pattern are likely to occur due to the unclearness, and the material (chemical species) of the information recording layer is limited to a narrow range. There was a drawback that

発明の目的 本発明は、情報記録層の無機材料層の結晶非晶貴転移が
従東よシ容易に生ずるようにすること、および、情報記
録層に用いることができる無機材料の化学棟を拡張する
ことをその目的とする。
Purpose of the Invention The present invention is to enable the crystal-amorphous noble transition to occur more easily in the inorganic material layer of the information recording layer, and to expand the chemistry of inorganic materials that can be used in the information recording layer. Its purpose is to

発明の構成と作用 本発明においては、結晶非結晶質転移によって透過率が
変化する情報記録層と、熱伝導率が温度によって変化す
る腺を設けて、結晶の相転移である結晶非晶質転移を容
易に生ずるようにする。
Structure and operation of the invention In the present invention, an information recording layer whose transmittance changes due to a crystalline amorphous transition and a gland whose thermal conductivity changes depending on the temperature are provided to prevent the crystalline amorphous transition that is a crystalline phase transition. to occur easily.

以下、本発明の構成と作用を具体的に説明するために一
実施例を示す。第2図Aにおいて、ガラスまたはプラス
チック等の基板1の上に、情報記録層として結晶非晶質
転移膜(TmGaSn) 22を設け、その上に熱伝導
変化J[23を設ける。結晶非晶質転移膜22は、真空
蒸着勢で基板1の上に形成したTaGaSn層(数10
0〜100DA )を熱処理で微結晶化せしめることに
よシ得る。その上に形成される熱伝導変化膜23は熱伝
導率が低い膜であシ、例えばポリ塩化ビニール(数10
0〜1000.;)が用いられる。ポリ塩化ビニールは
温度によシ熱伝導率が第4図に示すご′とく変化する特
性を有する。すなわち、第4図のごとくポリ塩化ビニー
ルの熱伝導率は温度が上昇すると増加し、0.1〜g 
、!IKtlz17..福r。
An example will be shown below to specifically explain the structure and operation of the present invention. In FIG. 2A, a crystal-amorphous transition film (TmGaSn) 22 is provided as an information recording layer on a substrate 1 made of glass or plastic, and a heat conduction change J[23 is provided thereon. The crystal-amorphous transition film 22 is a TaGaSn layer (several 10
0 to 100 DA) by microcrystallizing it by heat treatment. The thermally conductive variable film 23 formed thereon is a film with low thermal conductivity, such as polyvinyl chloride (several 10
0~1000. ;) is used. Polyvinyl chloride has a property that its thermal conductivity changes with temperature as shown in FIG. In other words, as shown in Figure 4, the thermal conductivity of polyvinyl chloride increases as the temperature rises, and increases from 0.1 to g
,! IKtlz17. .. Fuku r.

d□変化する。d□Change.

このようにして構成されている情報記録媒体に高パワー
のレーザビームで熱エネルギーを与える。
Thermal energy is applied to the information recording medium configured in this way using a high-power laser beam.

この書込み用の高パワーのレーザビームは、例えば10
0mF とし、ごく短時間照射する。その結果、第2図
Bに示すごとく、レーザビームの照射部のポリ塩化ビニ
ール膜26の領域25は熱伝導率が高くなり、それによ
シ該領域25と結晶非晶質転移膜22のレーザビームの
照射領域24は熱が伝導し易い状態になり、照射後急冷
される。かくしてレーザビームが照射された前記領域2
5.24は急冷され、結晶非晶質転移膜22には、この
場合結晶から非晶質への転移が生じ、領域24は非晶質
化領域となる。そしてこの場合、レーザビームが照射さ
れたポリ塩化ビニールの領域25以外の部分、すなわち
、未照射の熱伝導変化膜23は熱伝導率が低く、未照射
の熱伝導変化膜23及び結晶非晶質転移膜220部分は
熱が逃げに〈〈なっている。そのため、照射部の領域2
5.24か急冷されて非晶質転移が生ずるのに対して、
゛そめ近傍の未照射の部分は徐冷されるようになってい
るので結晶状態に保持され、かくして鮮明な情報記録パ
ターンが得られる。
This high power laser beam for writing is, for example, 10
Set to 0mF and irradiate for a very short time. As a result, as shown in FIG. 2B, the area 25 of the polyvinyl chloride film 26 in the laser beam irradiation area has a high thermal conductivity, so that the area 25 and the crystal-amorphous transition film 22 are exposed to the laser beam. The irradiation area 24 becomes in a state where heat is easily conducted, and is rapidly cooled after irradiation. The area 2 thus irradiated with the laser beam
5.24 is rapidly cooled, and in this case, a transition from crystal to amorphous occurs in the crystal-amorphous transition film 22, and the region 24 becomes an amorphous region. In this case, the portion other than the region 25 of the polyvinyl chloride irradiated with the laser beam, that is, the unirradiated variable thermal conductivity film 23 has low thermal conductivity, and the unirradiated variable thermal conductive film 23 and the crystalline amorphous film 23 have low thermal conductivity. The transition film 220 portion serves as a means for heat to escape. Therefore, area 2 of the irradiation part
5.24 In contrast to rapid cooling, an amorphous transition occurs,
The unirradiated portion near the bottom is slowly cooled and is maintained in a crystalline state, thus providing a clear information recording pattern.

次に、このようにして得られた情報記録パターン社、低
パワーのレーザビームの照射により、結晶非晶質転移、
熱伝導率の変化が上記の1込みの場合と逆の方向に起こ
る結果、容易に消去することができる。この低パワーの
レーザビームは、例えば10 mWとし、岩込みの場合
よりも長時間照射する。
Next, the information recording pattern obtained in this way is irradiated with a low-power laser beam to induce a crystal-amorphous transition.
As a result of the change in thermal conductivity occurring in the opposite direction to that in the above-mentioned 1-inclusive case, it can be easily eliminated. This low power laser beam is, for example, 10 mW, and is irradiated for a longer time than in the case of rock encroachment.

本発明の他の実施例を第3図に示す。この例では、情報
記録層である結晶非晶質転移膜32の上方に熱伝導変化
膜56を設ける他に、基板1側にも他の熱伝導変化膜3
4を設けである。上方の熱伝導変化膜56は数100ノ
〜1ooo ;位に形成され、下方の熱伝導変化M 5
4の厚さは特に制限なく形成できる。情報記録層の結晶
非晶質転・移換32社数100〜1ooo、;程度に形
成される。この実施例では、レーザビーム照射部の熱伝
導変化膜の領域65゜37が共に熱伝導率が増大するた
め、領域55.56゜57の熱は上下両方向に急速に失
われ急冷される結果、領域66が非晶質転移し、鮮明な
情報記録パターンが得られる。
Another embodiment of the invention is shown in FIG. In this example, in addition to providing a thermally conductive variable film 56 above the crystalline amorphous transition film 32 that is the information recording layer, another thermally conductive variable film 3 is also provided on the substrate 1 side.
4 is provided. The upper heat conduction change film 56 is formed to a thickness of several hundred to 100 mm, and the lower heat conduction change film 56
The thickness of 4 can be formed without any particular restrictions. The information recording layer is formed to an extent of 100 to 100,000 crystal/amorphous transition/transfer. In this example, since the thermal conductivity of the region 65.degree. 37 of the thermally conductive variable film in the laser beam irradiation part increases, the heat of the region 55.56.degree. 57 is rapidly lost in both the vertical direction and is rapidly cooled. The region 66 undergoes an amorphous transition, and a clear information recording pattern is obtained.

以上、本発明について実施例を用いて説明したが、こζ
で結晶非晶質転移膜及び熱伝導変化膜についての条件を
説明する。
The present invention has been explained above using examples.
The conditions for the crystalline amorphous transition film and the thermal conductivity change film will be explained below.

(:)結晶非晶質転移膜 結晶非晶質転移材料は数多く知られており、本発明は広
くこれらを用いることができる。例えば、先の実施例の
TaGm5ル以外にTa−Ga、Ta−51、Aa−5
a%の合金、さらにはTa、Sm齢の単体、TaO2勢
の酸化物等である。
(:) Crystalline amorphous transition film Many crystalline amorphous transition materials are known, and the present invention can widely use these materials. For example, in addition to TaGm5 in the previous example, Ta-Ga, Ta-51, Aa-5
a% alloy, Ta, Sm age simple substance, TaO2 group oxide, etc.

(10熱伝導変化膜 上面、すなわちレーザ光の入射側に用いる材料は透明性
が要求されるが、下面側には透明性は要求されない。実
施例に示したポリ塩化ビニールの他、熱伝導率の温度係
数が正でかつ大な各種材料が用いられる。
(10) Transparency is required for the material used on the upper surface of the thermally conductive variable film, that is, on the laser beam incident side, but transparency is not required on the lower surface. Various materials with large and positive temperature coefficients are used.

発明の効果 本発明によれば、上述のごとく熱伝導変化膜を設けたこ
とにより、情報記録層の結晶非晶質転移における急冷お
よび徐冷条件を容易に実現することができ、鮮明な情報
記録パターンを得ることができる。また、高度な急冷条
件を達成できるので、情報記録層の材料の化学捕が従来
よシ増加するという利点がある。
Effects of the Invention According to the present invention, by providing the variable thermal conductivity film as described above, it is possible to easily realize the rapid cooling and slow cooling conditions for the crystal-amorphous transition of the information recording layer, resulting in clear information recording. You can get the pattern. Furthermore, since highly rapid cooling conditions can be achieved, there is an advantage that chemical capture of the material of the information recording layer is increased compared to the conventional method.

【図面の簡単な説明】[Brief explanation of drawings]

第1図・イ〜Cは従−四の情報記録媒体を用いた情報記
録パターンの形h4を示す工程図、第2図74.Bは本
発明の一実施例の情報記録媒体を用いた情報記録パター
ンの形成を示す工程図、第6図は本発明の他の実施例の
情報記録媒体を示す図、第4図はポリ塩化ビニール(軟
化点150〜170°C,190°Cで溶解)の熱伝導
率の温度特性を示す図。 主なる符号 1・・・基板、2・・・無機材料層、6・・・照射部、
22・・・結晶非晶質転移膜(情報記録層)、26・・
・熱伝導変化膜(ポリ塩化ビニール膜)、24・・・(
照射部の結晶非晶質転移膜の)領域、25・・・(照射
部の熱伝導変化膜の)領域、32・・・結晶非晶質転移
膜(情報記録層)、66・・・(下方の)熱伝導変化膜
、64・・・(上方の)熱伝導変化膜 特許出願人富士通株式会社 代理人弁理士玉 蟲 人工 部(外1名)第1図 第 2 図 IP43 図 第 4 図 温度(0c)
1A to 1C are process diagrams showing the information recording pattern form h4 using a sub-4 information recording medium, and FIG. 2 74. B is a process diagram showing the formation of an information recording pattern using an information recording medium according to an embodiment of the present invention, FIG. 6 is a diagram showing an information recording medium according to another embodiment of the present invention, and FIG. The figure which shows the temperature characteristic of the thermal conductivity of vinyl (softening point 150-170 degreeC, melt|dissolved at 190 degreeC). Main symbols 1... Substrate, 2... Inorganic material layer, 6... Irradiation part,
22...Crystal-amorphous transition film (information recording layer), 26...
・Thermal conductivity change membrane (polyvinyl chloride membrane), 24...(
) area of the crystalline amorphous transition film in the irradiated area, 25... area (of the thermally conductive variable film in the irradiated area), 32... crystalline amorphous transition film (information recording layer), 66... ( Lower) thermally conductive variable membrane, 64... (upper) thermally conductive variable membrane Patent applicant Fujitsu Limited Representative Patent Attorney Tama Mushi Artificial Department (1 other person) Fig. 1 Fig. 2 IP43 Fig. 4 Temperature (0c)

Claims (3)

【特許請求の範囲】[Claims] (1) 結晶の相転移によシ光の透過率が変化する無機
材料薄膜からなる情報記録層と、温度によシ熱伝導率が
変化し、かつその温度係数が正の熱伝導変化膜とが基板
上に積層されてなることを特徴とする情報記録媒体。
(1) An information recording layer made of an inorganic material thin film whose light transmittance changes due to crystal phase transition, and a thermal conductivity change film whose thermal conductivity changes with temperature and whose temperature coefficient is positive. An information recording medium characterized in that: are laminated on a substrate.
(2) 前記熱伝導変化膜を前記情報記録層上に設けて
なることを特徴とする特許請求の範囲第1項記載の情報
記録媒体・
(2) The information recording medium according to claim 1, wherein the thermally conductive variable film is provided on the information recording layer.
(3)前記熱伝導変化膜を前記情報記録層上及び該情報
記録層と基板との間に設けたことを特徴とする特許請求
の範囲第1項記載の情報記録媒体0
(3) Information recording medium 0 according to claim 1, characterized in that the thermally conductive variable film is provided on the information recording layer and between the information recording layer and the substrate.
JP59037784A 1984-02-29 1984-02-29 Information-recording medium Pending JPS60180885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59037784A JPS60180885A (en) 1984-02-29 1984-02-29 Information-recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59037784A JPS60180885A (en) 1984-02-29 1984-02-29 Information-recording medium

Publications (1)

Publication Number Publication Date
JPS60180885A true JPS60180885A (en) 1985-09-14

Family

ID=12507114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59037784A Pending JPS60180885A (en) 1984-02-29 1984-02-29 Information-recording medium

Country Status (1)

Country Link
JP (1) JPS60180885A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939013A (en) * 1985-05-24 1990-07-03 Matsushita Electric Industrial Co., Ltd. Optical information storing medium
EP0405605A2 (en) * 1989-06-30 1991-01-02 Fuji Xerox Co., Ltd. Optical recording process
JPH04132020U (en) * 1991-05-23 1992-12-07 上田印刷紙工株式会社 paper lid
JP2003042332A (en) * 2001-07-26 2003-02-13 Ckd Corp Manual opening/closing valve

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939013A (en) * 1985-05-24 1990-07-03 Matsushita Electric Industrial Co., Ltd. Optical information storing medium
EP0405605A2 (en) * 1989-06-30 1991-01-02 Fuji Xerox Co., Ltd. Optical recording process
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