JP2641049B2 - Optical information recording medium and recording method thereof - Google Patents

Optical information recording medium and recording method thereof

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Publication number
JP2641049B2
JP2641049B2 JP61218470A JP21847086A JP2641049B2 JP 2641049 B2 JP2641049 B2 JP 2641049B2 JP 61218470 A JP61218470 A JP 61218470A JP 21847086 A JP21847086 A JP 21847086A JP 2641049 B2 JP2641049 B2 JP 2641049B2
Authority
JP
Japan
Prior art keywords
recording medium
optical information
information recording
value
recording layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61218470A
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Japanese (ja)
Other versions
JPS6374135A (en
Inventor
隆 石黒
国彦 大田黒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
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Priority to JP61218470A priority Critical patent/JP2641049B2/en
Publication of JPS6374135A publication Critical patent/JPS6374135A/en
Application granted granted Critical
Publication of JP2641049B2 publication Critical patent/JP2641049B2/en
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Expired - Lifetime legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は,書き換え自在な光情報記録媒体とその記
録方法に関する。
Description: TECHNICAL FIELD The present invention relates to a rewritable optical information recording medium and a recording method thereof.

〔従来の技術〕[Conventional technology]

書き換え可能な光記録媒体としては,これまで光磁気
記録媒体や相転移形光記録媒体等が知られている。
As a rewritable optical recording medium, a magneto-optical recording medium, a phase transition type optical recording medium, and the like have been known.

前者の光磁気記録媒体は,記録層としてTbFe,GdFeCo
等の希土類と遷移金属のアモルファス合金の薄膜を用
い,上記記録層での磁気カー効果を利用して記録,消去
を行うものである。この方式の光記録媒体は,再生時に
得られる光の強度差が小さいため,高いC/N値が得られ
にくい。
The former magneto-optical recording medium has a recording layer of TbFe, GdFeCo
Recording and erasing are performed using a thin film of an amorphous alloy of a rare earth element such as a transition metal and a transition metal and utilizing the magnetic Kerr effect in the recording layer. With this type of optical recording medium, a high C / N value is difficult to obtain because the difference in light intensity obtained during reproduction is small.

後者の相転移形光記録媒体では,Te系化合物等の結晶
とアモルファスとの相変化を利用したものが知られてい
るが,さらに安定性に優れたものとして,液晶の固相と
ネマチック相との可逆的相転移を利用するものが提案さ
れている。これは,例えば,第3図に示すように,透明
な基板3,4の表面に形成した透明電極5,6の間に液晶1を
封入した構造を有する(特開昭59−104624号)。
The latter phase-change optical recording medium is known to utilize a phase change between a crystal such as a Te-based compound and an amorphous phase. However, as a more excellent stability, a liquid crystal solid phase and a nematic phase are used. Utilizing a reversible phase transition has been proposed. This has a structure in which a liquid crystal 1 is sealed between transparent electrodes 5 and 6 formed on the surfaces of transparent substrates 3 and 4, for example, as shown in FIG. 3 (JP-A-59-104624).

しかし、このような液晶の相転移を利用した上記光情
報記録媒体は、液晶1に電界を与えるための透明電極
5、6を必要とする。また、その記録時には、高速で回
転する光情報記録媒体に接点を接触させ、これを介して
上記透明電極5、6に電圧を印加しなければならない。
従って、比較的複雑な構造や記録方法をとらなければな
らない。
However, the optical information recording medium utilizing such a phase transition of the liquid crystal requires the transparent electrodes 5 and 6 for applying an electric field to the liquid crystal 1. At the time of recording, a contact must be brought into contact with an optical information recording medium rotating at a high speed, and a voltage must be applied to the transparent electrodes 5 and 6 through the contact.
Therefore, a relatively complicated structure and recording method must be adopted.

他方、液晶に磁界を与えながら、それにレーザ光を照
射することで液晶を部分的に相転移させて情報を記録
し、記録時と異なる方向から液晶に磁界を与えながら、
それにレーザ光を照射することで液晶を部分的に相転移
させて情報を消去する形式の相転移形光情報記録媒体の
光記録方式も既に提案されている。このような方式の光
記録を用いる場合、液晶に電界を与えるための透明電極
を必要としない。
On the other hand, while applying a magnetic field to the liquid crystal, by irradiating a laser beam to the liquid crystal, the liquid crystal partially undergoes a phase transition to record information, and while applying a magnetic field to the liquid crystal from a direction different from the recording time,
An optical recording method of a phase transition type optical information recording medium in which information is erased by partially irradiating a liquid crystal by irradiating a laser beam thereto has already been proposed. When optical recording of this type is used, a transparent electrode for applying an electric field to the liquid crystal is not required.

〔発明が解決しようとしている課題〕[Problems to be solved by the invention]

しかしながら、上記従来の磁界を利用した相転移形光
情報記録媒体の光記録方式では、高いC/N値が得られ
ず、また繰り返し記録と消去を行った後のC/N値の劣化
も大きいという課題があった。
However, in the conventional optical recording method of the phase-change optical information recording medium using a magnetic field, a high C / N value cannot be obtained, and the deterioration of the C / N value after repeatedly performing recording and erasing is large. There was a problem that.

この発明は、液晶の相転移を利用した従来の書き換え
可能な光情報記録媒体における上記の課題を解決し、高
いC/N値が得られ、また繰り返し再生した後のC/N値の劣
化も小さな光情報記録媒体とその記録方法を提供するこ
とを目的とする。
The present invention solves the above-mentioned problems in the conventional rewritable optical information recording medium utilizing the phase transition of the liquid crystal, achieves a high C / N value, and also reduces deterioration of the C / N value after repeated reproduction. It is an object to provide a small optical information recording medium and a recording method thereof.

〔課題を解決するための手段〕[Means for solving the problem]

この発明の構成を図面の符号を引用しながら説明する
と、第一の発明による光情報記録媒体は、転移温度が15
0℃を越え、かつレーザ光照射時の温度より低い液晶に
より記録層12が形成されていることを特徴とするもので
ある。
The structure of the present invention will be described with reference to the reference numerals in the drawings. The optical information recording medium according to the first invention has a transition temperature of 15
The recording layer 12 is formed of liquid crystal exceeding 0 ° C. and lower than the temperature at the time of laser beam irradiation.

また、第二の発明による記録方法は、転移温度が150
℃を越える上記記録層12にレーザ光を照射しながら、照
射個所に記録層12の表面に対して垂直または同表面と平
行な磁界を形成し、記録層12への記録またはその消去を
行う方法である。
The recording method according to the second invention has a transition temperature of 150
A method of recording or erasing data on or from the recording layer 12 by irradiating the recording layer 12 with a laser beam having a temperature exceeding 100 ° C. while forming a magnetic field perpendicular to or parallel to the surface of the recording layer 12 at the irradiated location. It is.

〔作用〕[Action]

記録層12の転移温度は、記録された状態を常温で保持
するため、常温より充分高いことが必要であるが、本発
明者は、C/N値と繰り返し再生した後のC/N値の劣化とい
う点でも、記録層12の転移温度が重要なファクターとな
ることを見いだした。すなわち、後述するように、記録
層12の転移温度を150℃を越える温度とし、レーザ光を
照射しながら、このような記録層12の表面に対して垂直
に磁界を与えて記録をし、記録層12の表面に対して平行
に磁界を与えて消去することにより、高いC/N値が得ら
れ、繰り返し再生した後のその低下もきわめて低くなる
ことが確認された。具体的には、40dB以上と高いC/N値
が得られ、繰り返し再生した後のその低下も2dB以下と
なる。
The transition temperature of the recording layer 12 is required to be sufficiently higher than room temperature in order to maintain the recorded state at room temperature.However, the present inventor has found that the C / N value and the C / N value after repeated reproduction are different. In terms of deterioration, the inventors have found that the transition temperature of the recording layer 12 is an important factor. That is, as described later, the recording temperature is set to a temperature exceeding 150 ° C. and the recording layer 12 is irradiated with a laser beam while applying a magnetic field perpendicularly to the surface of the recording layer 12 to perform recording. By applying a magnetic field in parallel to the surface of the layer 12 for erasing, it was confirmed that a high C / N value was obtained, and the decrease after repeated reproduction was extremely low. Specifically, a C / N value as high as 40 dB or more is obtained, and the decrease after repeated reproduction is 2 dB or less.

これに対し、記録層12の転移温度が150℃以下のとき
は、高いC/N値が得られにくく、繰り返し再生したとき
のC/N値の劣化も大きい。具体的には、記録層12の転移
温度が80℃程度の場合、C/N値は35dBと低くなり、繰り
返し再生後の劣化は10dBと大きくなる。
On the other hand, when the transition temperature of the recording layer 12 is 150 ° C. or lower, it is difficult to obtain a high C / N value, and the C / N value upon repeated reproduction is greatly deteriorated. Specifically, when the transition temperature of the recording layer 12 is about 80 ° C., the C / N value is as low as 35 dB, and the deterioration after repeated reproduction is as large as 10 dB.

〔実 施 例〕〔Example〕

次に,この発明の実施例について説明する。 Next, an embodiment of the present invention will be described.

(実施例1) 高温液晶である下記の(a)の化学式で表されるジア
ニルサルベンチジン2重量%と,下記の(b)の化学式
で表されるレーザ吸収色素であるインドール系シアニン
色素0.5重量%とを,ジアセトンアルコールに溶解し
た。
(Example 1) 2% by weight of dianylsalbenzidine represented by the following chemical formula (a), which is a high-temperature liquid crystal, and an indole cyanine dye, which is a laser absorbing dye represented by the following chemical formula (b): 0.5% by weight was dissolved in diacetone alcohol.

この溶液を直径130mm,厚さ1.2mmのポリメチルメタク
リレート基板の表面にスピンナ法によって塗布し,基板
が磁界を垂直に切るよう10KOeの磁場を通した後,乾燥
し,厚さ70nmの記録層を形成した。さらにこの上に市販
のルミフロン(旭硝子株式会社製)をスピンナ法によっ
て塗布し,光情報記録媒体を製作した。
This solution was applied to the surface of a polymethyl methacrylate substrate having a diameter of 130 mm and a thickness of 1.2 mm by a spinner method, passed through a magnetic field of 10 KOe so that the substrate cut the magnetic field vertically, dried, and dried to form a 70 nm thick recording layer. Formed. Further, a commercially available Lumiflon (manufactured by Asahi Glass Co., Ltd.) was applied thereon by a spinner method to produce an optical information recording medium.

第1図で示すように,2μmの間隔で電磁石a,bの磁極
を対向させると共に,これら磁極を同磁極として,いわ
ゆる付き合わせ磁極を形成した。これによって,記録層
12の表面に1000Oeの垂直な磁界を加えながら,基板11側
から波長830nm,入射パワー10mW,スポット径1μmの半
導体レーザ光を照射し,線速1.4m/sec,記録周波数500KH
zで記録した。
As shown in FIG. 1, the magnetic poles of the electromagnets a and b were opposed at an interval of 2 μm, and these magnetic poles were used as the same magnetic pole to form a so-called combined magnetic pole. As a result, the recording layer
A semiconductor laser beam having a wavelength of 830 nm, an incident power of 10 mW, and a spot diameter of 1 μm is irradiated from the substrate 11 side while applying a vertical magnetic field of 1000 Oe to the surface of the substrate 12 at a linear velocity of 1.4 m / sec and a recording frequency of 500 KH.
Recorded with z.

次いで,この光情報記録媒体に波長830nm,入射パワー
0.3mWのレーザ光を照射し,再生信号のC/N値を測定し,
その結果を表1に示した。また,この再生を105回繰り
返し,これによるC/N値の低下を求め,その結果を表1
に示した。
Next, a wavelength of 830 nm and an incident power were applied to this optical information recording medium.
Irradiate 0.3mW laser light, measure C / N value of reproduction signal,
The results are shown in Table 1. Further, repeating the playback 10 5 times, obtains a reduction in C / N value according to Table 1 The results
It was shown to.

その後,第2図で示すように,上記対向する磁極を異
なる磁極とし,記録層12の表面に1000Oeの平行な磁界を
加えながら,基板11側から波長830nm,入射パワー10mW,
スポット径1μmの半導体レーザ光を照射し,上記の記
録を消去した。
Then, as shown in FIG. 2, the opposite magnetic poles are set to different magnetic poles, and while applying a parallel magnetic field of 1000 Oe to the surface of the recording layer 12, a wavelength of 830 nm, an incident power of 10 mW,
The above record was erased by irradiating a semiconductor laser beam having a spot diameter of 1 μm.

(実施例2) 上記実施例1において、ジアニルサルベンチジンとイ
ンドール系シアニン色素に代えて,テトラメチルベンゾ
フェナジン2重量%と,銅フタロシアニン0.5重量%を
それぞれ使用し,同様にして光情報記録媒体を作った。
(Example 2) Optical information recording was performed in the same manner as in Example 1, except that 2% by weight of tetramethylbenzophenazine and 0.5% by weight of copper phthalocyanine were used instead of dianilsalbenzidine and indole cyanine dye. Made a medium.

また,同様にしてこの光情報記録媒体に記録し,それ
を再生することによって,初期のC/N値と105回再生後の
C/N値の低下を求め,これらを表1に示した。
In the same manner recorded in the optical information recording medium, by reproducing it, the initial C / N value and 10 5 times after regeneration
The reduction of C / N value was determined, and these are shown in Table 1.

(実施例3) 上記実施例1において,ジアニルサルベンチジンに代
えて,下記の化学式で表されるジアニルサルベンチジン
誘導体を同量使用し,同様にして光情報記録媒体を作っ
た。
(Example 3) An optical information recording medium was produced in the same manner as in Example 1 except that dianylsalbenzidine derivative represented by the following chemical formula was used in the same amount instead of dianylsalbenzidine.

また,同様にしてこの光情報記録媒体に記録し,それ
を再生することによって,初期のC/N値と105回再生後の
C/N値の低下とを求め,これらを表1に示した。
In the same manner recorded in the optical information recording medium, by reproducing it, the initial C / N value and 10 5 times after regeneration
The decrease in C / N value was determined, and these are shown in Table 1.

(実施例4) 上記実施例2において,テトラメチルベンゾフェナジ
ンに代えて,下記の化学式で表されるジメチルトリフェ
ニレンを同量使用し,同様にして光情報記録媒体を作っ
た。
Example 4 An optical information recording medium was produced in the same manner as in Example 2 except that tetramethylbenzophenazine was used in the same amount as dimethyltriphenylene represented by the following chemical formula.

また,同様にしてこの光情報記録媒体に記録し,それ
を再生することによって,初期のC/N値と105回再生後の
C/N値の低下とを求め,これらを表1に示した。
In the same manner recorded in the optical information recording medium, by reproducing it, the initial C / N value and 10 5 times after regeneration
The decrease in C / N value was determined, and these are shown in Table 1.

比較例 上記実施例1において,ジアニルサルベンチジンに代
えて,下記の化学式で表されるp−n−ヘプタノキシベ
ンジリデンアミノビフェニルヨウ素置換体を同量使用
し,同様にして光情報記録媒体を作った。
Comparative Example In Example 1, the same amount of pn-heptanoxybenzylideneaminobiphenyl iodine-substituted compound represented by the following chemical formula was used in place of dianilsalbenzidine, and an optical information recording medium was similarly produced. made.

また,同様にしてこの光情報記録媒体に記録し,それ
を再生することによって,初期のC/N値と105回再生後の
C/N値の低下とを求め,これらを表1に示した。
In the same manner recorded in the optical information recording medium, by reproducing it, the initial C / N value and 10 5 times after regeneration
The decrease in C / N value was determined, and these are shown in Table 1.

既に述べた通り、記録層12を形成する液晶の転移温度
は、常温より充分高いことが必要であるが、特に150℃
を越えることが必要である。これは、液晶の転移温度が
150℃以下のときは、高いC/N値が得られにくく、繰り返
し再生したときのC/N値の劣化も大きいことによる。因
に、上記比較例で記録層12を形成している液晶の転移温
度が79℃であるのに対し、実施例1〜4では何れも150
℃を超える。そして、後者のC/N値が何れも40dB以上、1
05回再生後の劣化が2dB以下であるのに対し、前者のC/N
値は37dB、その10回再生後の劣化は10dBであった。
As described above, the transition temperature of the liquid crystal forming the recording layer 12 needs to be sufficiently higher than the normal temperature, and particularly, 150 ° C.
It is necessary to exceed This is because the transition temperature of the liquid crystal is
At a temperature of 150 ° C. or lower, a high C / N value is hardly obtained, and the deterioration of the C / N value upon repeated reproduction is large. Incidentally, while the transition temperature of the liquid crystal forming the recording layer 12 in the comparative example was 79 ° C., in Examples 1 to 4,
Exceeds ° C. And the latter C / N value is 40dB or more, 1
0 Degradation after 5 times playback is 2dB or less, whereas the former C / N
The value was 37 dB, and the deterioration after 10 reproductions of 5 times was 10 dB.

〔発明の効果〕〔The invention's effect〕

以上説明した通り、この発明による光情報記録媒体と
その記録方法では、従来の液晶を使用した光情報記録媒
体やその記録方法のように、液晶に電界を加える必要も
ないため、透明電極で記録層を挟む必要がなく、また、
記録時に光情報記録媒体に接点を接触させる必要もな
い。しかも、高いC/N値が得られ、繰り返し再生した後
のC/N値の劣化も小さい光情報記録媒体とその記録方法
となり得る。
As described above, in the optical information recording medium and the recording method according to the present invention, unlike the conventional optical information recording medium using a liquid crystal and the recording method, it is not necessary to apply an electric field to the liquid crystal. There is no need to sandwich layers,
It is not necessary to contact the optical information recording medium with a contact at the time of recording. In addition, an optical information recording medium having a high C / N value and having a small deterioration of the C / N value after repeated reproduction can be provided and a recording method thereof.

【図面の簡単な説明】 第1図は,この発明の実施例を示す光情報記録媒体とそ
の記録方法の概念図,第2図は,同じく光情報記録媒体
とその記録の消去方法を示す概念図,第3図は,光情報
記録媒体の従来例を示す縦断面図である。 11……基板、12……記録層
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a conceptual diagram of an optical information recording medium and an optical recording method according to an embodiment of the present invention, and FIG. FIG. 3 is a longitudinal sectional view showing a conventional example of an optical information recording medium. 11 ... substrate, 12 ... recording layer

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】基板11上に書き換え自在な記録層12が形成
された光情報記録媒体において、転移温度が150℃以上
を越え、かつレーザ光照射時の温度より低い液晶により
記録層12が形成されていることを特徴とする光情報記録
媒体。
In an optical information recording medium having a rewritable recording layer formed on a substrate, the recording layer is formed of liquid crystal having a transition temperature exceeding 150 ° C. or higher and lower than the temperature at the time of laser beam irradiation. An optical information recording medium characterized by being performed.
【請求項2】基板11上に書き換え自在な記録層12が形成
された光情報記録媒体に記録する方法において、転移温
度が150℃を越える上記録層12にレーザ光を照射しなが
ら、照射個所に記録層12の表面に対して垂直または同表
面と平行な磁界を形成することを特徴とする光情報記録
媒体の記録方法。
2. A method for recording on an optical information recording medium having a rewritable recording layer 12 formed on a substrate 11, wherein the upper recording layer 12 having a transition temperature exceeding 150.degree. A magnetic field perpendicular to or parallel to the surface of the recording layer 12.
JP61218470A 1986-09-17 1986-09-17 Optical information recording medium and recording method thereof Expired - Lifetime JP2641049B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61218470A JP2641049B2 (en) 1986-09-17 1986-09-17 Optical information recording medium and recording method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61218470A JP2641049B2 (en) 1986-09-17 1986-09-17 Optical information recording medium and recording method thereof

Publications (2)

Publication Number Publication Date
JPS6374135A JPS6374135A (en) 1988-04-04
JP2641049B2 true JP2641049B2 (en) 1997-08-13

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JP2763263B2 (en) * 1992-12-31 1998-06-11 第一合纖株式會社 Optical recording medium

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212937A (en) * 1985-07-10 1987-01-21 Nec Corp Optical recording system
JPS62154340A (en) * 1985-12-27 1987-07-09 Nec Corp Optical recording medium

Also Published As

Publication number Publication date
JPS6374135A (en) 1988-04-04

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