JPS60173850A - 半導体装置の試験装置 - Google Patents

半導体装置の試験装置

Info

Publication number
JPS60173850A
JPS60173850A JP59028465A JP2846584A JPS60173850A JP S60173850 A JPS60173850 A JP S60173850A JP 59028465 A JP59028465 A JP 59028465A JP 2846584 A JP2846584 A JP 2846584A JP S60173850 A JPS60173850 A JP S60173850A
Authority
JP
Japan
Prior art keywords
needle
semiconductor device
probe
current
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59028465A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0566732B2 (enExample
Inventor
Masaaki Minami
南 正昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59028465A priority Critical patent/JPS60173850A/ja
Publication of JPS60173850A publication Critical patent/JPS60173850A/ja
Publication of JPH0566732B2 publication Critical patent/JPH0566732B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP59028465A 1984-02-20 1984-02-20 半導体装置の試験装置 Granted JPS60173850A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59028465A JPS60173850A (ja) 1984-02-20 1984-02-20 半導体装置の試験装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59028465A JPS60173850A (ja) 1984-02-20 1984-02-20 半導体装置の試験装置

Publications (2)

Publication Number Publication Date
JPS60173850A true JPS60173850A (ja) 1985-09-07
JPH0566732B2 JPH0566732B2 (enExample) 1993-09-22

Family

ID=12249399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59028465A Granted JPS60173850A (ja) 1984-02-20 1984-02-20 半導体装置の試験装置

Country Status (1)

Country Link
JP (1) JPS60173850A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006337247A (ja) * 2005-06-03 2006-12-14 Fuji Electric Device Technology Co Ltd 半導体素子の試験装置および試験方法
JP2011174946A (ja) * 2011-06-02 2011-09-08 Fuji Electric Co Ltd 半導体素子の試験方法
JP2012089680A (ja) * 2010-10-20 2012-05-10 Micronics Japan Co Ltd 半導体測定装置
JP2015049076A (ja) * 2013-08-30 2015-03-16 三菱電機株式会社 接触子、測定装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006337247A (ja) * 2005-06-03 2006-12-14 Fuji Electric Device Technology Co Ltd 半導体素子の試験装置および試験方法
JP2012089680A (ja) * 2010-10-20 2012-05-10 Micronics Japan Co Ltd 半導体測定装置
JP2011174946A (ja) * 2011-06-02 2011-09-08 Fuji Electric Co Ltd 半導体素子の試験方法
JP2015049076A (ja) * 2013-08-30 2015-03-16 三菱電機株式会社 接触子、測定装置

Also Published As

Publication number Publication date
JPH0566732B2 (enExample) 1993-09-22

Similar Documents

Publication Publication Date Title
US10746788B2 (en) Sensing structure of alignment of a probe for testing integrated circuits
CN101231322B (zh) 集成电路开路/短路的测试连接方法
JPH0429561Y2 (enExample)
TWI813361B (zh) 電阻器結構及其阻值測量系統
JPS60173850A (ja) 半導体装置の試験装置
CN110506212A (zh) 电连接装置
US7397255B2 (en) Micro Kelvin probes and micro Kelvin probe methodology
CN212693951U (zh) 一种核心超导约瑟夫森结测试装置
JP2008197056A (ja) 抵抗測定方法
US10613116B2 (en) Kelvin connection with positional accuracy
JPH0829475A (ja) 実装基板検査装置のコンタクトプローブ
CN206945761U (zh) 探针卡及测试系统
JPH0789126B2 (ja) 混成集積回路板の電気的特性検査を行う方法
KR102582793B1 (ko) 검사용 소켓 및 그 제조방법
JPS626653B2 (enExample)
JPS5917259A (ja) 半導体素子の測定方法
JP2526212Y2 (ja) Icソケット
JPH03190148A (ja) 半導体ウェハーのプローブ針あわせ方法
JPS584943A (ja) 低インピ−ダンスプロ−ブカ−ド
JPH0980116A (ja) 半導体チップ用ソケット
CN205374532U (zh) 探针卡及测试系统
JPS6222069Y2 (enExample)
JPH08195420A (ja) 微少電流測定装置
JPH01265531A (ja) プローブカード
JPS6137776B2 (enExample)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term